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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Integrated experiment package to measure lunar surface composition - gamma ray, alpha particle, X ray fluorescence, and neutron albedo experiments
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Time of flight spectroscopic measurements in arc heated supersonic molecular beam using algebraic relations, sensing modulated beam by Orbitron type detector
Thermal and electrical performances of silicon solar cell designs at high solar intensities
Kordesch-Marko interrupter bridge circuit includes capability of varying frequency of interruption in steps from 60 Hz to 2000 Hz range extension, and addition of operating modes to allow instrument to serve as steady dc constant-current source or load, or source of interrupted constant current.
Tubes designed for a solar heat receiver to serve as an energy source for a Brayton power system were tested for 2002 hours and 1251 sun-shade cycles. The tubes were designed to transfer a constant thermal input to the Brayton system during an orbit. Excess solar energy during a sun period is stored as heat of fusion of lithium fluoride. The niobium - 1% zirconium tubes accommodate the 23 percent volume decrease of LiF during freezing. Test results showed slight, local distortions. The gas discharge temperature varied from 16 K (29 F) below to 28 K (50 F) above the nominal value of 1089 K (1500 F). The tube surface temperatures ranged from 1039 K (1410 F) to 1183 K (1670 F).
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Tests were conducted on the Mod-O 100 kW Wind Turbine to determine the performance of a tip-controlled rotor having an NACA 64 sub-618 airfoil over the moveable outboard 30% of the blade, while operating at nominal rotor speeds of 21 and 31 rpm. Tests were conducted at two rotor speeds to assess the performance improvement which could be realized with 2-speed operation. Test data are compared with analytical predictions and concluding remarks are presented. The results indicate a clear performance improvement for the 2-speed operation.
Previously cited in issue 12, p. 1960, Accession no. A81-29538
The results of experimental demonstrations of a superconducting solenoid model core in the Southampton University Magnetic Suspension and Balance System are detailed. Technology and techniques relevant to large-scale wind tunnel MSBSs comprise the long term goals. The magnetic moment of solenoids, difficulties peculiar to superconducting solenoid cores, lift force and pitching moment, dynamic lift calibration, and helium boil-off measurements are discussed.
The latitudinal behavior of intensities and multiplicities was registered by the neutron monitor 2 NM and the lead-free neutron monitor 3 SND (slow-neuron detector) in the equator-Kaliningrad line in the Atlantic Ocean. Coupling coefficients for 3 SND show the sensitivity of this detector to primary particles of cosmic rays of energies on the average lower than for 2 NM. As multiplicities increase, the coupling coefficients shift towards higher energies.
The stability of solar cells is a key factor in determining the reliability of photovoltaic modules and is of great interest in the case of solar cells having a new technology which has not yet been fully developed. In particular this question arises with hydrogenated amorphous silicon (a-Si) solar cells because a-Si exhibits reversible light induced changes in its electronic properties, commonly referred to as the Staebler-Wronski effect (SWE). Continuous progress is being made in the peak conversion efficiencies of a-Si solar cells and efficiencies in excess of 11% have been achieved. However, stability is still a problem. ARCO Solar reports results on solar cells which, after over a year's exposure to sunlight, under open circuit conditions, still have about 7% conversion efficiency. Other results show a region of fast degradation for about a month, after which the degradation diminishes rapidly.
A flight test program was conducted to obtain data from an upgraded Gazelle helicopter with an advanced geometry, three bladed rotor. Data were acquired on upper and lower surface chordwise blade pressure, blade bending and torsion moments, and fuselage structural loads. Results are presented from 16 individual flight conditions, including level flights ranging from 10 to 77 m/sec at 50 to 3000 m altitude, turning flights up to 2.0 g, and autorotation. Rotor aerodynamic data include information from 51 pressure transducers distributed chordwise at 75, 88, and 97% radial stations. Individual tranducer pressure coefficients and airfoil section lift and pitching moment coefficients are presented, as are steady state flight condition parameters and time dependence rotor loads. All dynamic data are presented as harmonic analysis coefficients.
The calibration of the 70-meter antenna at C-band (5.01 GHz) and L-band (1.668 GHz) is described. This calibration comes after a modification to an existing L-band feed to include the C-band frequencies. The test technique employs noise-adding radiometers and associated equipment running simultaneously at both frequencies. The test procedure is described including block diagrams, and results are presented for efficiency, system temperature, and pointing.
Semiconductor power devices are typically rated for operation below 150 C. Little data is known for power semiconductors over 150 C. In most cases, the device is derated to zero operating power at 175 C. At the high temperature end of the temperature range, the intrinsic carrier concentration increases to equal the doping concentration level and the silicon behaves as an intrinsic semiconductor. The increase in intrinsic carrier concentration results in a shift of the Fermi level toward mid-bandgap at elevated temperatures. This produces a shift in devices characteristics as a function of temperature. By increasing the doping concentration higher operating temperatures can be achieved. This technique was used to fabricate low power analog and digital devices in silicon with junction operating temperatures in excess of 300 C. Additional temperature effects include increased p-n junction leakage with increasing temperature, resulting in increased resistivity. The temperature dependency of physical properties results in variations in device characteristics. These must be quantified and understood in order to develop extended temperature range operation.
The global winds measurement application of coherent Doppler lidar requires intensive study of the global climatology of atmospheric aerosol backscatter at infrared wavelengths. An airborne backscatter lidar is discussed, which has been developed to measure atmospheric backscatter profiles at CO2 laser wavelengths. The instrument characteristics and representative flight measurement results are presented.
The results of the NPN bipolar transistor (BJT) (2N6023) breakdown voltage measurements were analyzed. Switching measurements were made on the NPN BJT, the insulated gate bipolar transistor (IGBT) (TA9796) and the N-channel metal oxide semiconductor field effect transistor (MOSFET) (RFH75N05E). Efforts were also made to build a H-bridge inverter. Also discussed are the plans that have been made to do life testing on the devices, to build an inductive switching test circuit and to build a dc/dc switched mode converter.
Testing of the metal oxide semiconductor (MOS)-controlled thyristor (MCT) has uncovered a failure mechanism at elevated temperature. The failure appears to be due to breakdown of the gate oxide. Further testing is underway to verify the failure mode. Higher current level inverters were built to demonstrate 200 C operation of the N-MOSFET's and insulated-gate-bipolar transistors (IGBT's) and for life testing. One MOSFET failed early in testing. The origin of this failure is being studied. No IGBT's have failed. A prototype 28-to-42 V converter was built and is being tested at room temperature. The control loop is being finalized. Temperature stable, high value (10 micro-F) capacitors appear to be the limiting factor in the design at this time. In this application, the efficiency will be lower for the IGBT version due to the large V sub(cesat) (3.5-4 V) compared to the input voltage of 28 V. The MOSFET version should have higher efficiency; however, the MOSFET does not appear to be as robust at 200 C. Both versions are built for comparison.