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Results for “reverse current”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Digital light processing of porous LLZTO scaffolds for Li-garnet solid-state batteries

Li 7 La 3 Zr 2 O 12 (LLZO)-based solid-state electrolytes (SEs) are promising materials for next-generation solid-state batteries. In this work, digital light processing (DLP), an emerging additive manufacturing technology, is employed to produce porous Ta-doped LLZO (LLZTO) scaffolds. The self-standing scaffolds are 100 μm thick and have 40% porosity. The scaffolds demonstrate symmetric cell cycling stability exceeding 1,500 h at 0.1 mA/cm2 current density, with a capacity of 0.1 mAh/cm 2 (1 h for each half cycle). At higher current densities, reversible soft shorts frequently happen, while immediate hard shorts are prevented due to Li dendrite growth being hindered by the tortuous pore network. In addition to the cycling stability, the phase stability of LLZTO is investigated during the post-printing thermal process for printing resin removal. We discovered that the LLZTO partially decomposes into Li 2 Zr 2 O 7 and other impurity phases from 400°C to 800°C, but the pure LLZTO phase is restored upon the completion of resin removal beyond 800°C.

Li-metal anode↗
DOE OSTI2021

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

The development of gallium nitride (GaN) power devices requires a reliable selective-area doping process, which is difficult to achieve because of ongoing challenges associated with the required etch-then-regrow process. The presence of silicon (Si) impurities of unclear physical origin at the GaN regrowth interface has proven to be a major bottleneck. Furthermore, this paper investigates the origin of Si contamination at the epitaxial GaN-on-GaN interface and demonstrates an approach that markedly reduces its impact on device performance. An optimized dry-etching approach combined with UV-ozone and chemical etching is shown to greatly reduce the Si concentration levels at the regrowth interface, and a significant improvement in a reverse leakage current in vertical GaN-based p–n diodes is achieved.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Vertical β -Ga2O3 metal–insulator–semiconductor diodes with an ultrathin boron nitride interlayer

In this work, we demonstrate the high performance of β-Ga2O3 metal–insulator–semiconductor (MIS) diodes. An ultrathin boron nitride (BN) interlayer is directly grown on the Ga2O3 substrate by pulsed laser deposition. X-ray photoelectron spectroscopy, Raman spectroscopy, and high-resolution transmission electron microscopy confirm the existence of a 2.8 nm BN interlayer. Remarkably, with the insertion of the ultrathin BN layer, the breakdown voltage is improved from 732 V for Ga2O3 Schottky barrier diodes to 1035 V for Ga2O3 MIS diodes owing to the passivated surface-related defects and reduced reverse leakage currents. Our approach shows a promising way to improve the breakdown performance of Ga2O3-based devices for next-generation high-power electronics.

Physics↗
DOE OSTI2023

Enhancement in electro-optic performance of InAlGaAs/GaAs quantum dot lasers by ex situ thermal annealing

Here, this Letter reports the growth, fabrication, and characterization of molecular beam epitaxy (MBE)-grown quaternary InAlGaAs/GaAs quantum dot (QD) lasers emitting at sub-900 nm. The presence of Al in QD-based active regions acts as the origin of defects and non-radiative recombination centers. Applying optimized thermal annealing annihilates the defects in p-i-n diodes, thus lowering the reverse leakage current by six orders of magnitude compared to as-grown devices. A systematic improvement in the optical properties of the devices is also observed in the laser devices with increasing annealing time. At an annealing temperature of 700°C for 180 s, Fabry–Pérot lasers exhibit a lower pulsed threshold current density at infinite length of 570 A/cm 2 .

42 ENGINEERING↗
DOE OSTI2022

Assessment of dislocation reduction on 100 mm diameter bulk GaN grown by the NEAT method

X-ray topography measurements on a 100 mm diameter GaN boule grown by the Near Equilibrium AmmonoThermal method revealed an improvement in dislocation density from >1 × 10 6 cm -2 to between 2 × 10 5 and 5 × 10 5 cm -2, an improvement greater than two to five times from seed to growth. This data builds on previous X-ray diffraction and defect selective etching to quantify the reduction in defect density that is closely associated with increasing growth thickness. This result indicates that there is a pathway to further dislocation reduction by increasing growth thickness for GaN crystals including those of 100 mm or larger diameter. Further reduction of the dislocation density of large-area substrates will lead to GaN power devices with reduced leakage current under reverse bias and better device performance.

36 MATERIALS SCIENCE↗
NASA NTRS1972

Junction characteristics of silicon solar cells. Part 1: Nonilluminated case

Precise values of the reverse saturation currents in silicon solar cells and magnitudes of the diffusion and recombination components have been obtained. The recombination current as well as leakage current due to shunting are shown to be nonuniform across the cell. The diffusion lengths calculated from the diffusion current components agree well with diffusion lengths measured independently in similar material. Models are given demonstrating the effect of recombination and shunting currents on the dark current-voltage characteristics of solar cells.

Stirn, R. J.↗
NASA NTRS1972

Junction characteristics of silicon solar cells.

Precise values of the reverse saturation currents in solar cells and magnitudes of the diffusion and recombination components have been obtained. The recombination current as well as leakage current due to shunting are shown to be nonuniform across the cell and to be responsible for up to 30% loss in efficiency for the average cell in a Jupiter-type environment. Models are given demonstrating the effect of recombination and shunting currents on dark and light characteristics of solar cells.

Stirn, R. J.↗
NASA NTRS1973

Low-high junction theory applied to solar cells

Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open circuit voltage and improved radiation resistance. Several analytical models for open circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero SRV case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells. Detailed descriptions and derivations for the models are included. The correspondences between them are discussed. This modeling suggests that the meaning of minority carrier diffusion length measured in BSF cells be reexamined.

Godlewski, M. P.↗
NASA NTRS1974

Low-high junction theory applied to solar cells

Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open-circuit voltage and improved radiation resistance. Several analytical models for open-circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero surface recombination velocity (SRV) case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells.

Godlewski, M. P.↗
NASA NTRS1976

Introduction to basic solar cell measurements

The basic approaches to solar cell performance and diagnostic measurements are described. The light sources, equipment for I-V curve measurement, and the test conditions and procedures for performance measurement are detailed. Solar cell diagnostic tools discussed include analysis of I-V curves, series resistance and reverse saturation current determination, spectral response/quantum yield measurement, and diffusion length/lifetime determination.

Brandhorst, H. W., Jr.↗
NASA NTRS1980

JANTX1N645-1 diode

Samples manufactured by Semtech were tested. Devices showed excessine reverse leakage currents during each of three test phases. Results of testing suggest that failures occurred because of static charge on surface of encapsulant, caused by thermal decomposition of paint.

Source record↗
NASA NTRS1980

JANTX/N746A diode

Samples manufactured by Siemens and Motorola were tested. Both lots did well in groups 1 and 3 testing. Failure analysis was done for group 2 tests because of excessive reverse-leakage-current failure mode.

Source record↗
NASA NTRS1981

Gallium phosphide high temperature diodes

High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

Chaffin, R. J.↗
NASA NTRS1983

The origins of Birkeland currents

Fundamental observations and zero-order theories for Birkeland currents are employed, together with recent observational data, to formulate a first-order model for the currents. Five categories of Birkeland currents are detailed, including region 1 current sheets which follow the auroral oval, region 2 currents with opposite polarity forming on the equatorward side, cusp currents poleward of region 1, currents appearing after extended periods of the interplanetary magnetic field, and a three-layer overlap of current sheets in the Harang discontinuity. The region 1 currents near noon are found to be driven by the interplanetary electric field on open field lines, while away from noon the inner edge of the plasma sheet is the source. Charge separation drives the region 2 currents, and neutralization is effected in the ionosphere. The magnetopause is concluded to be an insignificant factor for the Birkeland currents. Convection reversal is predicted to occur in the region 1 interior. Finally, four lobed polar electric fields are considered to be generated by the boundary layer dynamo, and indicate a closed magnetospheric configuration.

Stern, D. P.↗
NASA NTRS1985

High-efficiency silicon solar-cell design and practical barriers

A numerical evaluation technique is used to study the impact of practical barriers, such as heavy doping effects (Auger recombination, band gap narrowing), surface recombination, shadowing losses and minority-carrier lifetime (Tau), on a high efficiency silicon solar cell performance. Considering a high Tau of 1 ms, efficiency of a silicon solar cell of the hypothetical case is estimated to be around 29%. This is comparable with (detailed balance limit) maximum efficiency of a p-n junction solar cell of 30%. Value of Tau is varied from 1 second to 20 micro. Heavy doping effects, and realizable values of surface recombination velocities and shadowing, are then considered in succession and their influence on cell efficiency is evaluated and quantified. These practical barriers cause the cell efficiency to reduce from the maximum value of 29% to the experimentally achieved value of about 19%. Improvement in open circuit voltage V sub oc is required to achieve cell efficiency greater than 20%. Increased value of Tau reduces reverse saturation current and, hence, improves V sub oc. Control of surface recombination losses becomes critical at higher V sub oc. Substantial improvement in Tau and considerable reduction in surface recombination velocities is essential to achieve cell efficiencies greater than 20%.

Mokashi, A.↗
NASA NTRS1987

Solar Cels With Reduced Contact Areas

Efficiency of silicon solar cells increased about 20 percent using smaller metal-contact area on silicon at front and back of each cell. Reduction in contact area reduces surface recombination velocity under contact and thus reduces reverse saturation current and increases opencircuit voltage..

Daud, T.↗
NASA NTRS1987

An experimental investigation of the plasma contacting process

Measurements including plasma potential profile measurements made on a simple hollow cathode plasma contactor operating in the electron collection and emission modes are described. The ignited electron collection mode of contactor operation is identified, shown to improve contactor performance and found to be facilitated by increasing the size of the contactor anode. Potential profile data are compared to the predictions of a simple theoretical model that describes space-charge-current limitations imposed by the formation of a double sheath and found to agree with each other to within about + or - 25 percent. Because electrons, which are the dominant charge carriers, tend to be emitted from the hollow cathode in the emission mode and collected by the anode in the collection mode it is suggested that operation at high electrodynamic tether currents will probably require switching the point of tether connection to the contactor between its cathode and anode when the direction of tether current is reversed.

Wilbur, Paul J.↗