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At least 163 records · Page 9

Low Power Polysilicon Sources for IR Applications

We have designed and fabricated polysilicon thin film infrared (IR) sources by micromachining technology. These sources are made with a lightly doped middle region for light emission and heavy doping of the supporting legs. The sources are fabricated on a 10 mm thick, low temperature process parameters in the fabrication of these silicon dioxide layer. Different doping levels were used to achieve various source resistances. From the power requirement to reach the required light emission versus source resistance curve it is seen that there exists a resistance value which minimizes the necessary input power.

Das, N. C.↗

Surface Micromachined Silicon Carbide Accelerometers for Gas Turbine Applications

A finite-element analysis of possible silicon carbide (SIC) folded-beam, lateral-resonating accelerometers is presented. Results include stiffness coefficients, acceleration sensitivities, resonant frequency versus temperature, and proof-mass displacements due to centripetal acceleration of a blade-mounted sensor. The surface micromachined devices, which are similar to the Analog Devices Inc., (Norwood, MA) air-bag crash detector, are etched from 2-pm thick, 3C-SiC films grown at 1600 K using atmospheric pressure chemical vapor deposition (APCVD). The substrate is a 500 gm-thick, (100) silicon wafer. Polysilicon or silicon dioxide is used as a sacrificial layer. The finite element analysis includes temperature-dependent properties, shape change due to volume expansion, and thermal stress caused by differential thermal expansion of the materials. The finite-element results are compared to experimental results for a SiC device of similar, but not identical, geometry. Along with changes in mechanical design, blade-mounted sensors would require on-chip circuitry to cancel displacements due to centripetal acceleration and improve sensitivity and bandwidth. These findings may result in better accelerometer designs for this application.

DeAnna, Russell G.↗

Dynamics of the Molten Contact Line

The purpose of this program is to develop a basic understanding of how a molten material front spreads over a solid that is below its melting point, arrests, and freezes. Our hope is that the work will contribute toward a scientific knowledge base for certain new applications involving molten droplet deposition, including the "printing" of arbitrary three-dimensional objects by precise deposition of individual molten microdrops that solidify after impact. Little information is available at this time on the capillarity-driven motion and arrest of molten contact line regions. Schiaffino and Sonin investigated the arrest of the contact line of a molten microcrystalline wax spreading over a subcooled solid "target" of the same material. They found that contact line arrest takes place at an apparent liquid contact angle that depends primarily on the Stefan number S=c(T(sub f) -T(sub t)/L based on the temperature difference between the fusion point and the target temperature, and proposed that contact line arrest occurs when the liquid's dynamic contact angle approaches the angle of attack of the solidification front just behind the contact line. They also showed, however, that the conventional continuum equations and boundary conditions have no meaningful solution for this angle. The solidification front angle is determined by the heat flux just behind the contact line, and the heat flux is singular at that point. By comparing experiments with numerical computations, Schiaffino and Sonin estimated that the conventional solidification model must break down within a distance of order 0.1 - 1 microns of the contact line. The physical mechanism for this breakdown is as yet undetermined, and no first-principles theory exists for the contact angle at arrest. Schiaffino and Sonin also presented a framework for understanding how to moderate Weber number molten droplet deposition in terms of similarity laws and experimentation. The study is based on experiments with three molten materials- molten wax on solid wax, water on ice, and mercury on frozen mercury- which between them span a considerable range of the deposition/solidification similarity parameters. Correlations are obtained for the spreading velocity, spreading time scales, the spreading factor (i.e. ratio of deposited drop's final footprint radius and the drop's initial radius), post-spreading liquid oscillation amplitudes and time scales, and bulk solidification time scales. Duthaler carried out an experimental and theoretical investigation of the relationship between the liquid's apparent contact angle and the Capillary number Ca=mu U/sigma based on contact line speed, for molten materials spreading over subcooled solids. This relationship is required for modeling of melt spreading. We have adapted Voinov's methodology to the molten contact line and formulated a theoretical model for the Ca vs. contact angle relationship, based Schiaffino and Sonin#s (1997a,b) wedge-like solidification front model. With the solidification front angle taken from Schiaffino and Sonin, the model is in good agreement with the experimental results for Ca vs. contact angle. Duthaler also extended the experimental investigation of droplet deposition and contact line freezing to more materials, including solder on glass, solder on solder, water on ice, and molten microcrystalline wax on wax. The latter also included tests on inclined targets. Deposition tests have also been done with molten octacosane (C28H58) on various targets. An important objective of our program has been the development of micron-scale sensors for measuring the transient temperature at a point on the substrate surface as a molten contact line moves over it. The expectation is that this temperature history will yield a better understanding of the thermal process in the contact line region. The sensors are of the thermistor type, either 2.5 microns or 1.5 microns square, microfabricated with silicon-based technology on either pure silicon or amorphous silicon dioxide chips. Each chip has 32 sensors distributed on its surface in arrays. The time response is better than 10 ms. At the time of writing, sensor calibration is in progress. Results on thermal transients during contact line passage will be discussed at the conference. While we expect that the data will provide information on the near-contact-line heat transfer process, we also foresee possible problems. First, the spatial resolution of the sensors may be insufficient to resolve the near-contact-line region. Second, the sensors protrude about 0.5 microns above the substrate surface, and may affect the contact line motion. Third, a sensor's temperature history depends on both the heat flux distribution into it from the fusion front and the thermal properties of the substrate below it and the solidified melt between it and the fusion front. The heat flux distribution in the contact line region must therefore be unfolded from computations of the overall system's transient thermal response.

Sonin, Ain A.↗

Analysis of Aluminum-Nitride SOI for High-Temperature Electronics

We use numerical simulation to investigate the high-temperature (up to 500K) operation of SOI MOSFETs with Aluminum-Nitride (AIN) buried insulators, rather than the conventional silicon-dioxide (SiO2). Because the thermal conductivity of AIN is about 100 times that of SiO2, AIN SOI should greatly reduce the often severe self-heating problem of conventional SOI, making SOI potentially suitable for high-temperature applications. A detailed electrothermal transport model is used in the simulations, and solved with a PDE solver called PROPHET In this work, we compare the performance of AIN-based SOI with that of SiO2-based SOI and conventional MOSFETs. We find that AIN SOI does indeed remove the self-heating penalty of SOL However, several device design trade-offs remain, which our simulations highlight.

Biegel, Bryan A.↗

Methodology for Evaluating Raw Material Changes to RSRM Elastomeric Insulation Materials

The Reusable Solid Rocket Motor (RSRM) uses asbestos and silicon dioxide filled acrylonitrile butadiene rubber (AS-NBR) as the primary internal insulation to protect the case from heat. During the course of the RSRM Program, several changes have been made to the raw materials and processing of the AS-NBR elastomeric insulation material. These changes have been primarily caused by raw materials becoming obsolete. In addition, some process changes have been implemented that were deemed necessary to improve the quality and consistency of the AS-NBR insulation material. Each change has been evaluated using unique test efforts customized to determine the potential impacts of the specific raw material or process change. Following the evaluations, the various raw material and process changes were successfully implemented with no detectable effect on the performance of the AS-NBR insulation. This paper will discuss some of the raw material and process changes evaluated, the methodology used in designing the unique test plans, and the general evaluation results. A summary of the change history of RSRM AS-NBR internal insulation is also presented.

Mildenhall, Scott D.↗

Transport Modeling for Metallic Electrode: Semiconducting Nanotube Systems

Recently, current-voltage (I-V) characteristics have been reported by Collins et al. for a system with a scanning tunneling microscope (STM) tip and a carbon nanotube. The STM tip was driven forward into a film of many entangled nanotubes on a substrate, and then was retracted, so that one of nanotubes bridged the STM and the film. I-V characteristics had two different patterns for different heights. One showed large dI/ dV with V greater than 0, small dI/dV with V less than 0, and I = 0 near V = 0 (type-I), while the other showed rectification, i.e., I does not equal 0 only with V less than 0 (type-II), with the tip grounded. We propose a physical mechanism to explain the observed I-V patterns. We consider that the observed characteristics strongly reflected the nature of the tip (metal) - nanotube (semiconductor) contact. The other end of the nanotube was entangled well in the film, and simply provided a good Ohmic contact. We will argue that there are two different contact modes: vacuum gap and touching modes, depending on the presence or absence of a tiny vacuum gap d approx. 0.1 - 0.2 nm at the junction. These modes may be related to physisorption and chemisorption, respectively. Once admitting their existence, it is naturally shown that I-V characteristics are type-I in the vacuum gap mode, and type-II in the touching mode. We argue that the nanotube had to be an n-type semiconductor judging from the I-V characteristics, contrary to often observed p-type in the transistor applications, where p-type is probably due to the oxidation in air or the trapped charges in the silicon dioxide. Additional information is contained in the original extended abstract.

Yamada, Toshishige↗

Durability Issues for the Protection of Materials from Atomic Oxygen Attack in Low Earth Orbit

Low Earth orbital atomic oxygen is capable of eroding most polymeric materials typically used on spacecraft. Solar array blankets, thermal control polymers, and carbon fiber matrix composites are readily oxidized to become thinner and less capable of supporting the loads imposed upon them. Protective coatings have been developed that are durable to atomic oxygen to prevent oxidative erosion of the underlying polymers. However, the details of the surface roughness, coating defect density, and coating configuration can play a significant role as to whether or not the coating provides long duration atomic oxygen protection. Identical coatings on different surface roughness surfaces can have drastically different durability results. Examples and analysis of the causes of resultant differences in atomic oxygen protection are presented. Implications based on in-space experiences, ground laboratory testing, and computational modeling indicate that thin film vacuum-deposited aluminum protective coatings offer much less atomic oxygen protection than sputter-deposited silicon dioxide coatings.

Banks, Bruce↗

Dual-Mode Combustion of Hydrogen in a Mach 5, Continuous-Flow Facility

Results of an experimental and numerical study of a dual-mode scramjet combustor are reported. The experiment consisted of a direct-connect test of a Mach 2 hydrogen-air combustor with a single unswept-ramp fuel injector. The flow stagnation enthalpy simulated a flight Mach number of 5. Measurements were obtained using conventional wall instrumentation and a particle-imaging laser diagnostic technique. The particle imaging was enabled through the development of a new apparatus for seeding fine silicon dioxide particles into the combustor fuel stream. Numerical simulations of the combustor were performed using the GASP code. The modeling, and much of the experimental work, focused on the supersonic combustion mode. Reasonable agreement was observed between experimental and numerical wall pressure distributions. However, the numerical model was unable to predict accurately the effects of combustion on the fuel plume size, penetration, shape, and axial growth.

Goyne, C. P.↗

Digital PIV Measurements of Acoustic Particle Displacements in a Normal Incidence Impedance Tube

Acoustic particle displacements and velocities inside a normal incidence impedance tube have been successfully measured for a variety of pure tone sound fields using Digital Particle Image Velocimetry (DPIV). The DPIV system utilized two 600-mj Nd:YAG lasers to generate a double-pulsed light sheet synchronized with the sound field and used to illuminate a portion of the oscillatory flow inside the tube. A high resolution (1320 x 1035 pixel), 8-bit camera was used to capture double-exposed images of 2.7-micron hollow silicon dioxide tracer particles inside the tube. Classical spatial autocorrelation analysis techniques were used to ascertain the acoustic particle displacements and associated velocities for various sound field intensities and frequencies. The results show that particle displacements spanning a range of 1-60 microns can be measured for incident sound pressure levels of 100-130 dB and for frequencies spanning 500-1000 Hz. The ability to resolve 1 micron particle displacements at sound pressure levels in the 100 dB range allows the use of DPIV systems for measurement of sound fields at much lower sound pressure levels than had been previously possible. Representative impedance tube data as well as an uncertainty analysis for the measurements are presented.

Humphreys, William M., Jr.↗

Protective Coating Enhances the Durability of Retroreflectors for the International Space Station

Corner cube reflectors (retroreflectors) will be used on the International Space Station to aid in rendezvous and docking. They are designed to reflect light, such as that from a laser, directly back to the source. The resulting bright reflection from the surface can be used for critical alignment purposes. The housing for the reflectors is composed of polyoxymethylene, a polymer known as Delrin (DuPont), which is highly susceptible to erosion by the atomic oxygen environment that surrounds the station. Atomic oxygen is highly chemically reactive and will convert polymers such as Delrin into volatile oxidation products. This could cause the reflectors to detach from the housing or could cause volatile products and other contamination to recondense onto the surface of the reflectors, causing them to darken. The NASA Lewis Research Center is applying their patented fluoropolymer-filled silicon dioxide coating to the surface of the Delrin retroreflector to prevent degradation in performance caused by reactions with atomic oxygen.

Rutledge, Sharon K.↗

MISSE Scattered Atomic Oxygen Characterization Experiment

An experiment designed to measure the atomic oxygen (AO) erosion profile of scattered AO was exposed to Low Earth Orbital (LEO) AO for almost four years as part of the Materials International Space Station Experiment 1 and 2 (MISSE 1 and 2). The experiment was flown in MISSE Passive Experiment Carrier 2 (PEC 2), Tray 1, attached to the exterior of the International Space Station (ISS) Quest Airlock. The experiment consisted of an aperture disk lid of Kapton H (DuPont) polyimide coated on the space exposed surface with a thin AO durable silicon dioxide film. The aperture lid had a small hole in its center to allow AO to enter into a chamber and impact a base disk of aluminum. The AO that scattered from the aluminum base could react with the under side of the aperture lid which was coated sporadically with microscopic sodium chloride particles. Scattered AO erosion can occur to materials within a spacecraft that are protected from direct AO attack but because of apertures in the spacecraft the AO can attack the interior materials after scattering. The erosion of the underside of the Kapton lid was sufficient to be able to use profilometry to measure the height of the buttes that remained after washing off the salt particles. The erosion pattern indicated that peak flux of scattered AO occurred at and angle of approximately 45 from the incoming normal incidence on the aluminum base unlike the erosion pattern predicted for scattering based on Monte Carlo computational predictions for AO scattering from Kapton H polyimide. The effective erosion yield for the scattered AO was found to be a factor of 0.214 of that for direct impingement on Kapton H polyimide.

Banks, Bruce A.↗

Porous silicon carbide (SiC) semiconductor device

A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

Shor, Joseph S.↗

Memory switches based on metal oxide thin films

MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an OFF/ON resistance ratio of at least about 10.sup.3 and the tailorability of ON state (20) resistance. Such films are potentially extremely useful as a connection element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or disconnected as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.

Ramesham, Rajeshuni↗

Assessment of MODIS Scan Mirror Reflectance Changes On-Orbit

Since launch, the NASA EOS Terra and Aqua MODIS have operated successfully for more than 8 and 6 years, respectively. MODIS collects data using a two-sided scan mirror over a large scan angular range. The scan mirror is made of a polished, nickel-plated beryllium base coated with high purity silver, which is then over-coated with the Denton proprietary silicon monoxide and silicon dioxide mixture. The scan mirror's reflectance was characterized pre-launch using its witness samples, and the response versus scan angle was measured at the sensor system level. In this study, we present an assessment of MODIS scan mirror on-orbit degradation by examining changes of spectral band response over each sensor's mission lifetime. Results show that the scan mirror's optical properties for both Terra and Aqua MODIS have experienced significant degradation since launch in the VIS spectral region, which is mirror side dependent as well as scan angle dependent. In general, the mirror degradation is more severe for Terra MODIS than Aqua MODIS, especially during recent years. For Terra MODIS, the degradation rate is noticeably different between the mirror sides. On the other hand, there has been little mirror side dependent difference for Aqua MODIS.

Xiong, Xiaoxiong↗

Ion Milling On Steps for Fabrication of Nanowires

Arrays of nanowires having controlled dimensions can now be fabricated on substrates, optionally as integral parts of multilayer structures, by means of a cost-effective, high-yield process based on ion milling on steps. Nanowires made, variously, of semiconductors or metals are needed as components of sensors and high-density electronic circuits. Unlike prior processes used to fabricate nanowires, the present process does not involve electron-beam lithography, manipulation of nanoscopic objects by use of an atomic-force microscope, or any other technique that is inherently unsuitable for scaling up to mass production. In comparison with the prior processes, this process is rapid and simple. Wires having widths as small as a few tens of nanometers and lengths as long as millimeters have been fabricated by use of this process. The figure depicts a workpiece at different stages of the process. A silicon dioxide substrate is coated with a photoresist or poly(methyl methacrylate) [PMMA] to a thickness of as much as 500 nm. The photoresist or PMMA is patterned to form edges where wires are to be formed. A metal - either Pt or Ti - is deposited, by sputtering, to a thickness of as much as 200 nm. By ion milling at normal incidence, the thickness of the metal deposit is reduced until the only metal that remains is in the form of wall-like nanowires along the edges of the photoresist or PMMA. Finally, an oxygen plasma is used to remove the photoresist or PMMA, leaving only the nanowires on the substrate.

Yun, Minhee↗

Apparatus and method for gelling liquefied gasses

The present invention is a method and apparatus for gelling liquid propane and other liquefied gasses. The apparatus includes a temperature controlled churn mixer, vacuum pump, liquefied gas transfer tank, and means for measuring amount of material entering the mixer. The method uses gelling agents such as silicon dioxide, clay, carbon, or organic or inorganic polymers, as well as dopants such as titanium, aluminum, and boron powders. The apparatus and method are particularly useful for the production of high quality rocket fuels and propellants.

Elliott, Adam↗

High energy, low temperature gelled bi-propellant formulation

The present invention is a bi-propellant system comprising a gelled liquid propane (GLP) fuel and a gelled MON-30 (70% N.sub.2O.sub.4+30% NO) oxidizer. The bi-propellant system is particularly well-suited for outer planet missions greater than 3 AU from the sun and also functions in earth and near earth environments. Additives such as powders of boron, carbon, lithium, and/or aluminum can be added to the fuel component to improve performance or enhance hypergolicity. The gelling agent can be silicon dioxide, clay, carbon, or organic or inorganic polymers. The bi-propellant system may be, but need not be, hypergolic.

Di Salvo, Roberto↗

Fabrication of a Cryogenic Bias Filter for Ultrasensitive Focal Plane

A fabrication process has been developed for cryogenic in-line filtering for the bias and readout of ultrasensitive cryogenic bolometers for millimeter and submillimeter wavelengths. The design is a microstripline filter that cuts out, or strongly attenuates, frequencies (10 50 GHz) that can be carried by wiring staged at cryogenic temperatures. The filter must have 100-percent transmission at DC and low frequencies where the bias and readout lines will carry signal. The fabrication requires the encapsulation of superconducting wiring in a dielectric-metal envelope with precise electrical characteristics. Sufficiently thick insulation layers with high-conductivity metal layers fully surrounding a patterned superconducting wire in arrayable formats have been demonstrated. A degenerately doped silicon wafer has been chosen to provide a metallic ground plane. A metallic seed layer is patterned to enable attachment to the ground plane. Thick silicon dioxide films are deposited at low temperatures to provide tunable dielectric isolation without degrading the metallic seed layer. Superconducting wiring is deposited and patterned using microstripline filtering techniques to cut out the relevant frequencies. A low Tc superconductor is used so that it will attenuate power strongly above the gap frequency. Thick dielectric is deposited on top of the circuit, and then vias are patterned through both dielectric layers. A thick conductive film is deposited conformally over the entire circuit, except for the contact pads for the signal and bias attachments to complete the encapsulating ground plane. Filters are high-aspect- ratio rectangles, allowing close packing in one direction, while enabling the chip to feed through the wall of a copper enclosure. The chip is secured in the copper wall using a soft metal seal to make good thermal and electrical contact to the outer shield.

Chervenak, James↗