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DOE OSTI2025

Quantum Emitters Induced by High Pressure and UV Laser Irradiation in Multilayer GaSe

In this work, we report on defect generation in multilayer GaSe through hydrostatic pressure quenching and UV laser irradiation. The Raman line width from the UV 266 nm irradiated sample is much wider than that in pressure-quenched GaSe, corresponding to a wider defect energy distribution range in the former sample than the latter. After quenching from 11.2 GPa, three photoluminescence (PL) peaks from defect states are observed at 657, 681, and 695 nm at a low temperature of 93 K. Defect-related peaks at 649, 694, 750, and 774 nm also appear in low-temperature PL spectra after UV laser irradiation, with a nonmonotonous intensity dependence on irradiation duration. There are common features in defects produced by these two methods: the PL peaks with the lowest energy are sharp, and their PL intensities increase linearly with the excitation laser power and saturate above a certain excitation laser power. These two features are similar to those in defects for single-photon emission (SPE) in other 2D materials at even lower temperatures. Fluorescence lifetime imaging shows distinguished short (2.3 ns) and long (75.6 nm) lifetimes of the 695 nm PL line in pressure-quenched GaSe. The density functional theory predicts defect energy levels related to Se vacancy.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

Single-Shot Readout and Weak Measurement of a Tin-Vacancy Qubit in Diamond

The negatively charged tin-vacancy center in diamond (SnV − ) is an emerging platform for building the next generation of long-distance quantum networks. This is due to the SnV − ’s favorable optical and spin properties including bright emission, insensitivity to electronic noise, and long spin coherence times at temperatures above 1 K. Here, we demonstrate measurement of a single SnV − electronic spin with a single-shot readout fidelity of 87.4%, which can be further improved to 98.5% by conditioning on multiple readouts. In the process, we develop understanding of the relationship between strain, magnetic field, spin readout, and microwave spin control. We show that high-fidelity readout is compatible with rapid microwave spin control, demonstrating a favorable parameter regime for use of the SnV − center as a high-quality spin-photon interface. Finally, we use weak quantum measurement to study measurement-induced dephasing; this illuminates the fundamental interplay between measurement and decoherence in quantum mechanics, and provides a universal method to characterize the efficiency of color-center spin readout. Taken together, these results overcome an important hurdle in the development of the SnV − -based quantum technologies and, in the process, develop techniques and understanding broadly applicable to the study of solid-state quantum emitters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2025

Fundamental advantages of multijunction thermoradiative cells

Thermoradiative (TR) cells convert heat to work through emission of thermal radiation. Multijunction thermoradiative cells have received little research interest due to the apparent overlap with energy harvesting limits. Through detailed balance formalism, the present study models both single- and multi-diode TR devices, establishing their performance limits and identifying key factors that influence efficiency. For single-junction TR cells, we derive a relationship for the optimal bandgap and show that higher emitter temperatures increase efficiency. When the receiver is at absolute zero temperature, multijunction TR cells have little advantage over the single-junction cell in terms of the maximum output power density. However, for higher receiver temperatures, the multijunction configuration demonstrates significant improvements in both power and efficiency through the optimization of the chemical potential and bandgap of each diode in the complete ensemble. A 500 K emitter and 300 K receiver TR system can achieve a 21.25% increase in efficiency and a 10% improvement in the power density with multijunction architecture compared to a single junction through chemical potential optimization. These findings suggest that multijunction TR cells offer a promising approach to advancing low-grade heat recovery technologies for efficient heat-to-work conversion.

30 DIRECT ENERGY CONVERSION↗

NASA NTRS2014

High Efficiency Quantum Well Waveguide Solar Cells and Methods for Constructing the Same

Photon absorption, and thus current generation, is hindered in conventional thin-film solar cell designs, including quantum well structures, by the limited path length of incident light passing vertically through the device. Optical scattering into lateral waveguide structures provides a physical mechanism to increase photocurrent generation through in-plane light trapping. However, the insertion of wells of high refractive index material with lower energy gap into the device structure often results in lower voltage operation, and hence lower photovoltaic power conversion efficiency. The voltage output of an InGaAs quantum well waveguide photovoltaic device can be increased by employing a III-V material structure with an extended wide band gap emitter heterojunction. Analysis of the light IV characteristics reveals that non-radiative recombination components of the underlying dark diode current have been reduced, exposing the limiting radiative recombination component and providing a pathway for realizing solar-electric conversion efficiency of 30% or more in single junction cells.

Welser, Roger E.↗

NASA NTRS2018

High Efficiency Quantum Well Waveguide Solar Cells and Methods for Constructing the Same

Welser, Roger E.↗

DOE OSTI2025

SQuaD: Smart Quantum Detection for Photon Recognition and Dark Count Elimination

Quantum detectors of single photons are an essential component for quantum information processing across computing, communication and networking. Today's quantum detection system, which consists of single photon detectors, timing electronics, control and data processing software, is primarily used for counting the number of single photon detection events. However, it is largely incapable of extracting other rich physical characteristics of the detected photons, such as their wavelengths, polarization states, photon numbers, or temporal waveforms. This work, for the first time, demonstrates a smart quantum detection system, SQuaD, which integrates a field programmable gate array (FPGA) with a neural network model, and is designed to recognize the features of photons and to eliminate detector dark-count. The SQuaD is a fully integrated quantum system with high timing-resolution data acquisition, onboard multi-scale data analysis, intelligent feature recognition and extraction, and feedback-driven system control. Our \name experimentally demonstrates 1) reliable photon counting on par with the state-of-the art commercial systems; 2) high-throughput data processing for each individual detection events; 3) efficient dark count recognition and elimination; 4) up to 100% accurate feature recognition of photon wavelength and polarization. Additionally, we deploy the SQuaD to an atomic (erbium ion) photon emitter source to realize noise-free control and readout of a spin qubit in the telecom band, enabling critical advances in quantum networks and distributed quantum information processing.

Linne, Karl C. [U. Chicago (main)] (ORCID:00090009↗

DOE OSTI2023

Modular chip-integrated photonic control of artificial atoms in diamond waveguides

A central goal in creating long-distance quantum networks and distributed quantum computing is the development of interconnected and individually controlled qubit nodes. Atom-like emitters in diamond have emerged as a leading system for optically networked quantum memories, motivating the development of visible-spectrum, multi-channel photonic integrated circuit (PIC) systems for scalable atom control. However, it has remained an open challenge to realize optical programmability with a qubit layer that can achieve high optical detection probability over many optical channels. Here, we address this problem by introducing a modular architecture of piezoelectrically actuated atom-control PICs (APICs) and artificial atoms embedded in diamond nanostructures designed for high-efficiency free-space collection. The high-speed four-channel APIC is based on a splitting tree mesh with triple-phase shifter Mach–Zehnder interferometers. This design simultaneously achieves optically broadband operation at visible wavelengths, high-fidelity switching (>40dB) at low voltages, submicrosecond modulation timescales (>30MHz), and minimal channel-to-channel crosstalk for repeatable optical pulse carving. Via a reconfigurable free-space interconnect, we use the APIC to address single silicon vacancy color centers in individual diamond waveguides with inverse tapered couplers, achieving efficient single photon detection probabilities (∼15%) and second-order autocorrelation measurements g (2) (0)<0.14 for all channels. The modularity of this distributed APIC–quantum memory system simplifies the quantum control problem, potentially enabling further scaling to thousands of channels.

47 OTHER INSTRUMENTATION↗

DOE OSTI2025

Resonant metasurface‐enabled quantum light sources for single‐photon emission and entangled photon‐pair generation

Light encodes information in multiple degrees of freedom (e.g., frequency, amplitude, and phase), enabling high‐speed, high‐bandwidth communication through fiber optics. Unlike classical light, quantum light (single or entangled photons) can transmit quantum states over long distances without loss of coherence, thereby coherently interconnecting quantum nodes for distributed quantum entanglement. Quantum light sources are critical for developing scalable quantum networks aimed at distributed quantum computing, quantum teleportation, and secure quantum communications. However, existing quantum light sources suffer from limited integrability, insufficient spectral and spatial tunability, and inefficiencies in achieving mass‐produced, deterministic, on‐demand quantum light generation. These limitations significantly hinder progress toward direct, on‐chip integration with quantum processing units and detectors – an essential step toward scalable quantum networks. Resonant metasurfaces that leverage photonic modes – such as Mie resonances, guided‐mode resonances, or symmetry‐protected bound states in the continuum – offer strong spatial and temporal confinement of electromagnetic fields, characterized by high quality factors and small mode volumes. These metasurfaces greatly enhance linear and nonlinear light‐matter interactions, making them ideal for efficient on‐chip quantum light generation and manipulation. Here, we describe recent advances in nanoscale quantum light sources and quantum photonic state manipulation enabled by resonant metasurfaces. We also provide an outlook on next‐generation miniaturized quantum light sources achievable through materials innovations in quantum emitters, the co‐design of resonant metasurfaces, and ultimately, the heterogeneous integration of emerging layered van der Waals materials with resonant metasurfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2025

Spatial quantum-interference landscapes of multi-site-controlled quantum dots coupled to extended photonic cavity modes

Abstract A compact platform to integrate emitters in a cavity-like support is to embed quantum dots (QDs) in a photonic crystal (PhC) structure, making them promising candidates for integrated quantum photonic circuits. The emission properties of QDs can be modified by tailored photonic structures, relying on the Purcell effect or strong light-matter interactions. However, the effects of photonic states on spatial features of exciton emissions in these systems are rarely explored. Such effect is difficult to access due to random positions of self-assembled QDs in PhC structures, and the fact that quantum well excitons’ wavefunctions resemble photonic states in a conventional distributed Bragg reflector cavity system. In this work, we instead observe a spatial signature of exciton emission using site-controlled QDs embedded in PhC cavities. In particular, we observe the detuning-dependent spatial repulsion of the QD exciton emissions by polarized imaging of the micro-photoluminescence, dependent on the controlled QD’s position in a spatially extended photonic pattern. The observed effect arises due to the quantum interference between QD decay channel in a spatially-extended cavity mode. Our findings suggest that integration of site-controlled QDs in tailored photonic structures can enable spatially distributed single-photon sources and photon switches.

Physics↗

DOE OSTI2023

Degenerate parametric down-conversion facilitated by exciton-plasmon polariton states in a nonlinear plasmonic cavity

Abstract We study the effect of degenerate parametric down-conversion (DPDC) in an ensemble of two-level quantum emitters (QEs) coupled via near-field interactions to a single surface plasmon (SP) mode of a nonlinear plasmonic cavity. For this purpose, we develop a quantum driven-dissipative model capturing non-equilibrium dynamics of the system in which incoherently pumped QEs have transition frequency tuned near the second-harmonic response of the SPs. Considering the strong coupling regime, i.e. the SP-QE interaction rate exceeds system dissipation rates, we find a critical SP-QE coupling attributed to the phase transition between normal and lasing steady states. Examining fluctuations above the system’s steady states, we predict new elementary excitations, namely, the exciton-plasmon polaritons formed by the two-SP quanta and single-exciton states of QEs. The contribution of two-SP quanta results in the linear scaling of the SP-QE interaction rate with the number of QEs,  o , as opposed to the  o -scaling known for the Dicke and Tavis–Cummings models. We further examine how SP-QE interaction scaling affects the polariton dispersions and power spectra in the vicinity of the critical coupling. For this purpose, we compare the calculation results assuming a finite ensemble of QEs and the model thermodynamic limit. The calculated power spectra predict an interplay of coherent photon emission by QEs near the second-harmonic frequency and correlated photon-pair emission at the fundamental frequency by the SPs (i.e. the photonic DPDC effect).

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2023

Nanoscale imaging of quantum dot dimers using time-resolved super-resolution microscopy combined with scanning electron microscopy

Abstract Time-resolved super-resolution microscopy was used in conjunction with scanning electron microscopy to image individual colloidal CdSe/CdS semiconductor quantum dots (QD) and QD dimers. The photoluminescence (PL) lifetimes, intensities, and structural parameters were acquired with nanometer scale spatial resolution and sub-nanosecond time resolution. The combination of these two techniques was more powerful than either alone, enabling us to resolve the PL properties of individual QDs within QD dimers as they blinked on and off, measure interparticle distances, and identify QDs that may be participating in energy transfer. The localization precision of our optical imaging technique was ∼3 nm, low enough that the emission from individual QDs within the dimers could be spatially resolved. While the majority of QDs within dimers acted as independent emitters, at least one pair of QDs in our study exhibited lifetime and intensity behaviors consistent with resonance energy transfer from a shorter lifetime and lower intensity donor QD to a longer lifetime and higher intensity acceptor QD. For this case, we demonstrate how the combined super-resolution optical imaging and scanning electron microscopy data can be used to characterize the energy transfer rate.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Novel In-situ Patterning Technique to Fabricate Single Quantum Dots for Quantum Photonics

Photon sources able to emit single or entangled photon pairs are key components in quantum information systems. Semiconductor quantum dots (QDs) are promising candidates due to their high efficiencies and ease of integration with other photonic or electronic components. State-of-the-art QDs, however, are limited to certain emission wavelengths and specific applications due to material choice constraints and their randomness in shape/size. This project is focused on developing a novel in-situ patterning technique to realize QDs with a broad emission range, shape/size control and the ability to emit single/entangled photons. Our approach has two key elements: (1) In-situ patterning via arsenic-induced nanovoid etching on antimonide surfaces and (2) In-filling of nanovoids to form QDs. By closely controlling the experimental conditions, it is shown that this technique can be used to realize III-V QDs in As 2 - etched nanovoids on a GaSb surface. The exposure to As 2 in terms of substrate temperature, time and flux is found to have a significant impact on the process variables such as nanovoid depth, QD dimensions etc. An in-depth analysis of the etch mechanism reveals that by controlling the As 2 exposure, uniform 3-dimensional nanostructures with varying areal densities can be obtained without an in-filling step. Preliminary optical characterization of these nanostructures shows that these QDs may be relevant for realizing emitters in the telecom wavelength range.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2021

Vacuum system design, construction, and operation for the Cornell High Energy Synchrotron Source upgrade

During the summer and fall 2018, the Cornell High Energy Synchrotron Source (CHESS), underwent an upgrade that recast the facility as primarily a low emittance X-ray source. The upgrade replaced one sixth of the Cornell Electron Storage Ring (CESR) with six double-bend achromats, featuring four novel CHESS Compact Undulator (CCU) insertion devices, and switched CESR to single particle beam operation. At the time of this writing, the upgraded storage ring has achieved the CHESS-U design goal of operating with 200 mA of positron current at 6.0 GeV beam energy. Additionally, seven out of eleven CHESS-U beamlines are currently in X-ray user operation. The construction and the commissioning of the new section of the CESR accelerator required novel solutions to design, fabrication, and vacuum system operations. Significant design considerations and efforts were made to minimize X-ray ‘dark-time’, returning to operation less than 1 year. This paper describes the important milestones of the process, the solutions implemented, and the present status of CHESS-U.

43 PARTICLE ACCELERATORS↗

DOE OSTI2024

Ligand Controls Excited Charge Carrier Dynamics in Metal-Rich CdSe Quantum Dots: Computational Insights

Small metal-rich semiconducting quantum dots (QDs) are promising for solid-state lighting and single-photon emission due to their highly tunable yet narrow emission line widths. Nonetheless, the anionic ligands commonly employed to passivate these QDs exert a substantial influence on the optoelectronic characteristics, primarily owing to strong electron–phonon interactions. In this work, we combine time-domain density functional theory and nonadiabatic molecular dynamics to investigate the excited charge carrier dynamics of Cd 28 Se 17 X 22 QDs (X = HCOO – , OH – , Cl – , and SH – ) at ambient conditions. These chemically distinct but regularly used molecular groups influence the dynamic surface-ligand interfacial interactions in Cd-rich QDs, drastically modifying their vibrational characteristics. The strong electron–phonon coupling leads to substantial transient variations at the band edge states. The strength of these interactions closely depends on the physicochemical characteristics of passivating ligands. Consequently, the ligands largely control the nonradiative recombination rates and emission characteristics in these QDs. Our simulations indicate that Cd 28 Se 17 (OH) 22 has the fastest nonradiative recombination rate due to the strongest electron–phonon interactions. Conversely, QDs passivated with thiolate or chloride exhibit considerably longer carrier lifetimes and suppressed nonradiative processes. The ligand-controlled electron–phonon interactions further give rise to the broadest and narrowest intrinsic optical line widths for OH and Cl-passivated single QDs, respectively. Finally, obtained computational insights lay the groundwork for designing appropriate passivating ligands on metal-rich QDs, making them suitable for a wide range of applications, from blue LEDs to quantum emitters.

36 MATERIALS SCIENCE↗

NASA NTRS2004

Buffer Layer Effects on Tandem InGaAs TPV Devices

Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of configurations both with and without buffer layers. All structures were characterized by reciprocal space x-ray diffraction to determine epilayer composition and residual strain. Electrical characterization of the devices was performed to examine the effect of the buffer on the device performance. The effect of the buffer structure depends upon where it is positioned. When near the emitter region, a 2.6x increase in dark current was measured, whereas no change in dark current was observed when it was near the base region.

Wilt, David M.↗

DOE OSTI2025

High‐Temperature Single‐Photon Emission From Covalently Functionalized van der Waals Heterostructures

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as tungsten diselenide (WSe 2 ) are attractive nanomaterials for quantum information applications due to single-photon emission (SPE) from intrinsic atomic defects. Defect and strain engineering techniques have been developed to produce high purity, deterministically placed SPE in WSe 2 . However, a major challenge in the application of these techniques is the low temperature required to observe defect-bound TMD exciton emission, typically limiting SPE to T < 30 K. SPE at higher temperatures either loses purity or requires integration into complex devices such as optical cavities. Here, 2D heterostructure engineering and molecular functionalization are combined to achieve high purity (>90%) SPE in strained WSe 2 persisting to over T = 90 K. Covalent diazonium functionalization of graphite in layered WSe 2 /graphite heterostructures maintains high purity up to T = 90 K and single-photon source integrity up to T = 115 K. This method preserves the best qualities of SPE from WSe 2 while increasing working temperature to more than three times the typical range. This work demonstrates the versatility of surface functionalization and heterostructure design to synergistically improve the properties of quantum emission and offers new insights into the phenomenon of SPE from 2D materials.

2D materials↗

DOE OSTI2020

Metalorganic chemical vapor deposition of ZnGeN 2 films on GaN: effects of cation stoichiometry on surface morphology and crystallinity

Novel optoelectronic device designs based on the heterostructures of III-N and II-IV-N 2 are promising to advance device performance significantly. For example, by utilizing InGaN-ZnGeN 2 quantum well (QW) structures instead of pure InGaN, the band structure engineering in the QW active region can lead to improved electron-hole wavefunction overlap, and thus enhance the radiative efficiency for photon generation. These novel heterostructures have great potential to address the current challenge of low quantum efficiency in InGaN QW based light emitting diodes emitting in green and beyond. The materials development of ZnGeN 2 is still at an early stage as compared to the much matured GaN material system. In an ideal octet rule preserving ordered structure of ZnGeN 2 , every N atom is coordinated by exactly two Zn and two Ge atoms. However, local violation of octet rule can be caused by non-ideal coordination of N by the cations. The disordered structure is thermodynamically less favorable but can still be achieved, for example, in kinetics-limited growth regime. The ordered ZnGeN 2 has a bandgap very close to that of GaN (~3.4 eV) and a lattice mismatch of <0.1% with GaN. Interestingly, the valence band of ZnGeN 2 has been predicted to be ~1 eV above that of GaN, which has inspired novel designs for high efficiency light emitters. In this work, we investigated the metalorganic chemical vapor deposition (MOCVD) of ZnGeN 2 films on GaN/c-sapphire templates. Diethylzinc (DEZn), germane (GeH4) and ammonia were used as the precursors for Zn, Ge and N, respectively. A systematic study was conducted to investigate the cation stoichiometry as a function of growth temperature (TG), total reactor pressure (P) and DEZn/GeH 4 molar flow rate ratio (RII/IV). Under the investigated growth window, the Zn/(Zn+Ge) composition in the films, determined from energy dispersive X-ray spectroscopy, decreased monotonically with increase in TG but increased with increase in P and RII/IV. Atom probe tomography data did not indicate the presence of any secondary phases such as Zn 3 N 2 or Ge 3 N 4 . The surface morphology and crystallinity of the grown films had strong correlation with the Zn/(Zn+Ge) composition. The scanning electron microscopy images showed that the near-stoichiometric films have planar surfaces whereas Zn-rich films had crystallites on their surface and the Zn-poor films had faceted surface. Scanning transmission electron microscopy (STEM) imaging revealed that the Zn-rich and Zn-poor films have columnar and filament-like morphology, respectively, whereas the near-stoichiometric films have continuous film-like cross-sectional morphology. TEM nano-diffraction patterns as well as X-ray diffraction 2θ-ω scan profiles indicate that the near stoichiometric films are single crystalline. Nano-diffraction pattern of the stoichiometric films resembled that of a disordered ZnGeN 2 structure. Room temperature Raman spectra of near-stoichiometric films showed only the phonon density of states like features of a cation disordered ZnGeN 2 . Cathodoluminescence and photoluminescence spectra measured at different temperatures had similar features with peak emission wavelength at ~ 2 eV. In conclusion, the stoichiometry of ZnGeN 2 films can be widely tuned by tuning the MOCVD growth parameters. The surface morphology and the crystallinity of the films were found to have strong correlation with the Zn/(Zn+Ge) composition. The stoichiometric ZnGeN 2 films grown on GaN were demonstrated with uniform surface morphology and high crystalline quality. The results from this work will provide pathway to implement ZnGeN 2 in device structures.

Karim, Md Rezaul↗