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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Tradeoffs in Flight Design Upset Mitigation in State of the Art FPGAs: Hardened by Design vs. Design Level Hardening

This presentation compares and contrasts the effectiveness and the system/designer impacts of the two main approaches to upset hardening: the Actel approach (RTSX-S and RTAX-S) of low-level (inside each flip-flop) triplication and the Xilinx approach (Virtex and Virtex2) of design-level triplication of both functional blocks and voters. The effectiveness of these approaches is compared using measurements made in conjunction with each of the FPGAs' manufacturer: for Actel, published data [1] and for Xilinx, recent results from the Xilinx SEE Test Consortium (note that the author is an active and founding member). The impacts involve Actel advantages in the areas of transistor-utilization efficiency and minimizing designer involvement in the triplication while the Xilinx advantages relate to the ability to custom tailor upset hardness and the flexibility of re-configurability. Additionally, there are currently clear Xilinx advantages in available features such as the number of I/O's, logic cells, and RAM blocks as well as speed. However, the advantage of the Actel anti-fuses for configuration over the Xilinx SRAM cells is that the latter need additional functionality and external circuitry (PROMs and, at least a watchdog timer) for configuration and configuration scrubbing. Further, although effectively mitigated if done correctly, the proton upset-ability of the Xilinx FPGAs is a concern in severe proton-rich environments. Ultimately, both manufacturers' upset hardening is limited by SEFI (single-event functional interrupt) rates where it appears the Actel results are better although the Xilinx Virtex2-family result of about one SEFI in 65 device-years in solar-min GCR (the more intense part of the galactic cosmic-ray background) should be acceptable to most missions

radiation effects↗
NASA NTRS2006

Single Event Effects Test Results for Advanced Field Programmable Gate Arrays

Reconfigurable Field Programmable Gate Arrays (FPGAs) from Altera and Actel and an FPGA-based quick-turnApplication Specific Integrated Circuit (ASIC) from Altera were subjected to single-event testing using heavy ions. Both Altera devices (Stratix II and HardCopy II) exhibited a low latchup threshold (below an LET of 3 MeV-cm2/mg) and thus are not recommended for applications in the space radiation environment. The flash-based Actel ProASIC Plus device did not exhibit latchup to an effective LET of 75 MeV-cm2/mg at room temperature. In addition, these tests did not show flash cell charge loss (upset) or retention damage. Upset characterization of the design-level flip-flops yielded an LET threshold below 10 MeV-cm2/mg and a high LET cross section of about lxlO-6 cm2/bit for storing ones and about lxl0-7 cm2/bit for storing zeros . Thus, the ProASIC device may be suitable for critical flight applications with appropriate triple modular redundancy mitigation techniques.

Field Programmable Gate Arrays↗
NASA NTRS2008

Fault-Tolerant Coding for State Machines

Two reliable fault-tolerant coding schemes have been proposed for state machines that are used in field-programmable gate arrays and application-specific integrated circuits to implement sequential logic functions. The schemes apply to strings of bits in state registers, which are typically implemented in practice as assemblies of flip-flop circuits. If a single-event upset (SEU, a radiation-induced change in the bit in one flip-flop) occurs in a state register, the state machine that contains the register could go into an erroneous state or could hang, by which is meant that the machine could remain in undefined states indefinitely. The proposed fault-tolerant coding schemes are intended to prevent the state machine from going into an erroneous or hang state when an SEU occurs. To ensure reliability of the state machine, the coding scheme for bits in the state register must satisfy the following criteria: 1. All possible states are defined. 2. An SEU brings the state machine to a known state. 3. There is no possibility of a hang state. 4. No false state is entered. 5. An SEU exerts no effect on the state machine. Fault-tolerant coding schemes that have been commonly used include binary encoding and "one-hot" encoding. Binary encoding is the simplest state machine encoding and satisfies criteria 1 through 3 if all possible states are defined. Binary encoding is a binary count of the state machine number in sequence; the table represents an eight-state example. In one-hot encoding, N bits are used to represent N states: All except one of the bits in a string are 0, and the position of the 1 in the string represents the state. With proper circuit design, one-hot encoding can satisfy criteria 1 through 4. Unfortunately, the requirement to use N bits to represent N states makes one-hot coding inefficient.

Naegle, Stephanie Taft↗
NASA NTRS2007

Algorithm-Based Fault Tolerance for Numerical Subroutines

A software library implements a new methodology of detecting faults in numerical subroutines, thus enabling application programs that contain the subroutines to recover transparently from single-event upsets. The software library in question is fault-detecting middleware that is wrapped around the numericalsubroutines. Conventional serial versions (based on LAPACK and FFTW) and a parallel version (based on ScaLAPACK) exist. The source code of the application program that contains the numerical subroutines is not modified, and the middleware is transparent to the user. The methodology used is a type of algorithm- based fault tolerance (ABFT). In ABFT, a checksum is computed before a computation and compared with the checksum of the computational result; an error is declared if the difference between the checksums exceeds some threshold. Novel normalization methods are used in the checksum comparison to ensure correct fault detections independent of algorithm inputs. In tests of this software reported in the peer-reviewed literature, this library was shown to enable detection of 99.9 percent of significant faults while generating no false alarms.

Tumon, Michael↗
NASA NTRS2005

Multiple Embedded Processors for Fault-Tolerant Computing

A fault-tolerant computer architecture has been conceived in an effort to reduce vulnerability to single-event upsets (spurious bit flips caused by impingement of energetic ionizing particles or photons). As in some prior fault-tolerant architectures, the redundancy needed for fault tolerance is obtained by use of multiple processors in one computer. Unlike prior architectures, the multiple processors are embedded in a single field-programmable gate array (FPGA). What makes this new approach practical is the recent commercial availability of FPGAs that are capable of having multiple embedded processors. A working prototype (see figure) consists of two embedded IBM PowerPC 405 processor cores and a comparator built on a Xilinx Virtex-II Pro FPGA. This relatively simple instantiation of the architecture implements an error-detection scheme. A planned future version, incorporating four processors and two comparators, would correct some errors in addition to detecting them.

Bolotin, Gary↗
NASA NTRS2004

FPGA-Based, Self-Checking, Fault-Tolerant Computers

A proposed computer architecture would exploit the capabilities of commercially available field-programmable gate arrays (FPGAs) to enable computers to detect and recover from bit errors. The main purpose of the proposed architecture is to enable fault-tolerant computing in the presence of single-event upsets (SEUs). [An SEU is a spurious bit flip (also called a soft error) caused by a single impact of ionizing radiation.] The architecture would also enable recovery from some soft errors caused by electrical transients and, to some extent, from intermittent and permanent (hard) errors caused by aging of electronic components. A typical FPGA of the current generation contains one or more complete processor cores, memories, and highspeed serial input/output (I/O) channels, making it possible to shrink a board-level processor node to a single integrated-circuit chip. Custom, highly efficient microcontrollers, general-purpose computers, custom I/O processors, and signal processors can be rapidly and efficiently implemented by use of FPGAs. Unfortunately, FPGAs are susceptible to SEUs. Prior efforts to mitigate the effects of SEUs have yielded solutions that degrade performance of the system and require support from external hardware and software. In comparison with other fault-tolerant- computing architectures (e.g., triple modular redundancy), the proposed architecture could be implemented with less circuitry and lower power demand. Moreover, the fault-tolerant computing functions would require only minimal support from circuitry outside the central processing units (CPUs) of computers, would not require any software support, and would be largely transparent to software and to other computer hardware. There would be two types of modules: a self-checking processor module and a memory system (see figure). The self-checking processor module would be implemented on a single FPGA and would be capable of detecting its own internal errors. It would contain two CPUs executing identical programs in lock step, with comparison of their outputs to detect errors. It would also contain various cache local memory circuits, communication circuits, and configurable special-purpose processors that would use self-checking checkers. (The basic principle of the self-checking checker method is to utilize logic circuitry that generates error signals whenever there is an error in either the checker or the circuit being checked.) The memory system would comprise a main memory and a hardware-controlled check-pointing system (CPS) based on a buffer memory denoted the recovery cache. The main memory would contain random-access memory (RAM) chips and FPGAs that would, in addition to everything else, implement double-error-detecting and single-error-correcting memory functions to enable recovery from single-bit errors.

Some, Raphael↗
NASA NTRS2004

The Feasibility of Multipole Electrostatic Radiation Shielding

Although passive shielding appears to be the only workable solution for galactic cosmic radiation (GCR), active shielding may play an important augmenting role to control the dose from solar particle events (SPEs). It has been noted that, to meet the guidelines of NCRP Report No. 98 through the six SPEs of 1989, a crew member would need roughly double the passive shielding that is necessary to control the GCR dose . This would dramatically increase spacecraft mass, and so it has been proposed that a small but more heavily shielded storm shelter may be used to protect the crew during SPEs. Since a gradual SPE may last 5 or more days, staying in a storm shelter may be psychologically and physiologically distressing to the crew. Storm shelters do not provide shielding for the spacecraft itself against the SPE radiation, and radiation damage to critical electronics may result in loss of mission and life. Single-event effects during the radiation storm may require quick crew response to maintain the integrity of the spacecraft, and confining the crew to a storm shelter prohibits their attending to the spacecraft at the precise time when that attention is needed the most. Active shielding cannot protect against GCR because the particle energies are too high. Although lower energy particles are easier to stop in a passive shield, such shielding is more satisfactory against GCR than against SPE radiation because of the tremendous difference in their initial fluences. Even a small fraction of the SPE fluence penetrating the passive shielding may result in an unacceptably high dose. Active shielding is more effective than passive shielding against SPE radiation because it offers 100% shielding effectiveness up to the cutoff energy, and significant shielding effectiveness beyond the cutoff as well.

Metzger, Philip T.↗
NASA NTRS2009

Comparison of TID Response and SEE Characterization of Single and Multi Level High Density NAND Flash Memories

Heavy ion single-event measurements and TID response for 8Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. In general, these commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The charge pump survived up to 600 krads.

nonvolatile memory↗
NASA NTRS2003

TID, SEE and radiation induced failures in advanced flash memories

We report on TID and SEE tests of multi-level and higher density flash memories. Stand-by currents and functionality tests were used to characterize the response of radiation-induced failures. The radiation-induced failures can be categorized as followings: SEU read errors during irradiation, stuck-bit read errors verified post-irradiation, write errors, erase failures, multiple upsets, and single-event latch up.

Scheick, Leif Z.↗
NASA NTRS2008

Guideline for ground radiation testing of microprocessors in the space radiation environment

The goal of this work is to develop a guideline that is applicable to processors that are potentially useful in space. Thus, the guideline does not consider very high performance processors that are intended for server or high-performance applications where very large amounts of power are tolerated to gain performance because it would be impractical to use such high-power devices in typical space applications. This guide is intended to support insertion of these microprocessors into spaceflight applications and to recommend ground test protocols. The first guideline principle that should be followed is a serious concurrent engineering approach for down selecting space-qualified microprocessors. This requires that the design engineer seek the support of a radiation effects expert who understands total ionizing dose (TID) and single-event effects (SEEs) issues for microprocessors as applied to the system in question.

Irom, Farokh↗
NASA NTRS2009

Radiation tests of highly scaled high density commercial nonvolatile NAND flash memories update 2009

Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena are examined: single effect upsets (SEUs), single event functional interrupts (SEFIs), and catastrophic loss of ability to erase and program the device. Also, radiation results of multilevel flash technology are compared with results from single-level flash technology. These commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The single-level devices are less sensitive to SEUs than multi-level devices. The charge pump in this study survived up to 600 krads. A new high current phenomenon in high density NAND flash memories is also discussed.

Nguyen, Duc N.↗
NASA NTRS2002

SEE and TID of emerging non-volatile memories

We report on the SEE and TID tests of higher density flash memories. Stand-by currents and full functional tests were used to characterize the response of radiation effects.

single-event upset non-volatile memories↗