Search NASA⌕ Search

SEARCH · Search NASA

Results for “capacitance”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,639 records · Page 91

Inversion Reduction Method for Real and Complex Distribution Feeder Models

We report the proliferation of distributed generation on distribution feeders triggers a large number of integration and planning studies. Further, the complexity of distribution feeder models, short simulation time steps, and long simulation horizons rapidly render studies computational burdensome. To mend this issue, we propose a methodology for reducing the number of nodes, loads, generators, line, and transformers of p-phase distribution feeders with unbalanced loads and generation, non-symmetric wire impedance, mutual coupling, shunt capacitance, and changes in voltage and phase. The methodology is derived on a constant power load assumption and employs a Gaussian elimination inversion technique to design the reduced feeder. Compared to previous work by the authors, the inversion reduction takes half the time and voltage errors after reduction are reduced by an order of magnitude. Using a snapshot simulation the reduction is tested on six additional publicly available feeders with a maximum voltage error 0.0075 p.u. regardless of feeder size or complexity, and typical errors on the order of 1 × 10 -4 p.u. Lastly, for a day long quasi-static time series simulation on the UCSD A feeder, errors are shown to increase with changes in loading when a large number of buses removed, but shows less variation for less than 85% of buses removed.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Parasitic Capacitors' Impact on Switching Performance in a 10 kV SiC MOSFET Based Converter

In a converter based on 10 kV SiC MOSFETs, major sources of parasitic capacitance are the anti-parallel junction barrier schottky (JBS) diode, heat sink, and load inductor. A half bridge phase leg test setup is built to investigate these parasitic capacitors’ impact on the switching performance at 6.25 kV. Generally these parasitic capacitors slows down both turn-on and turn-off transient and can cause significant increase in switching energy loss. The impact of the parasitic capacitor in the load inductor is analyzed, which has either very short wire or long wire in series. Switching performance of the phase leg with two different thermal designs are compared to investigate the impact of the parasitic capacitor due to the heat sink. The large parasitic capacitor due to the large drain plate of discrete 10 kV SiC MOSFET for heat dissipation can result in 44.5% increase in switching energy loss at low load current.

Huang, Xingxuan↗

Hardware Design of Medium Voltage SiC-Based Modular Multilevel Converters for Grid-Tied Applications

This paper presents a design of a 10 kV silicon carbide (SiC) MOSFET based modular multilevel converter (MMC). The MMC functions as the interconnection between a 24 kV dc bus and a 13. SkV distribution grid. This paper focuses on the hardware design of the MMC and its submodules. The gate driver, auxiliary power supply and bus bur in submodules are major components that need to meet high dv/dt immunity and high insulation voltage requirements. The gate driver achieves over 200 kV/us common mode transient immunity (CMTI). Its associated auxiliary power supply is based on an on-board transformer with over 30 kV insulation capability and 1.4 pF barrier capacitance. The busbar achieves less than 11 kV/cm electric field in the air to avoid partial discharges. Validation tests of the MMC submodule were performed by double pulse tests at 5 kV and buck converter tests at3 kV, 52A (peak). Reliable operations were achieved in validation tests.

auxiliary power supply↗

Above room temperature multiferroic and magnetoelectric properties of (1‐Φ) PZTFT‐Φ CZFMO particulate composites

Magnetoelectric (ME) composites of suitable ferroelectric and magnetic materials can display elevated magnetic and ferroelectric operational temperatures, along with substantial ME coupling, compared to conventional single-phase multiferroics. Herein, we describe the synthesis of (1-Φ) PZTFT-Φ CZFMO, Φ = 0.1, 0.2, 0.3 (PZTFT: [0.6(PbZr 0.53 Ti 0.47 O 3 )–0.4(PbFe 0.5 Ta 0.5 )O 3 ] CZFMO: Co 0.6 Zn 0.4 Fe 1.7 Mn 0.3 O 4 )] particulate (0–3) composites and report on the magnetic as well as ferroelectric phase transitions and magnetoelectric coupling. The phase formation and the induced strain in these composites are investigated via Raman spectroscopy. A large bifurcation of the zero-field cooled-field cooled magnetization curves confirms the highly anisotropic behavior of the composites. These curves also identify spin glass behavior in the CZFMO phase at ≈230 K. The magnetic phase transition of the composite (Φ = 0.2) is reported to be ≈532 (± 10) K. The temperature dependent dielectric data displays the ferroelectric phase transitions from the PZTFT phase and the broad relaxation peak from the CZFMO phase. The quadratic relationship between the magneto-capacitance and the magnetization confirms the existence of biquadratic magnetoelectric coupling in the systems. The collective results are consistent with the presence of a direct magneto-electric effect in the composites, i.e., by the application of magnetic field, the magnetic phase is strained, and this induced strain is responsible for changes of ferroelectric order parameter in the piezoelectric phase. As a result, this attribute makes the current composite structure a promising candidate for multiferroic data storage and processing technologies.

Bhoi, Krishnamayee↗

Water and vapor transport in algal‐fungal lichen: Modeling constrained by laboratory experiments, an application for Flavoparmelia caperata

ABSTRACT Algal‐fungal symbionts share water, nutrients, and gases via an architecture unique to lichens. Because lichen activity is controlled by moisture dynamics, understanding water transport is prerequisite to understand their fundamental biology. We propose a model of water distributions within foliose lichens governed by laws of fluid motion. Our model differentiates between water stored in symbionts, on extracellular surfaces, and in distinct morphological layers. We parameterize our model with hydraulic properties inverted from laboratory measurements of Flavoparmelia caperata and validate for wetting and drying. We ask: (1) Where is the bottleneck to water transport? (2) How do hydration and dehydration dynamics differ? and (3) What causes these differences? Resistance to vapor flow is concentrated at thallus surfaces and acts as the bottleneck for equilibrium, while internal resistances are small. The model captures hysteresis in hydration and desiccation, which are shown to be controlled by nonlinearities in hydraulic capacitance. Muting existing nonlinearities slowed drying and accelerated wetting, while exaggerating nonlinearities accelerated drying and slowed wetting. The hydraulic nonlinearity of F. caperata is considerable, which may reflect its preference for humid and stable environments. The model establishes the physical foundation for future investigations of transport of water, gas, and sugar between symbionts.

Potkay, Aaron↗

Control-Oriented Modeling of Lithium-Ion Batteries

Battery management systems (BMSs), which monitor and optimize performance while ensuring safety, require control-oriented models, i.e., models tailored to the design and implementation of estimation and control algorithms. Physics-based electrochemical models describe detailed battery phenomena, but are too computationally intensive for use in estimation and control applications. Single particle models (SPMs), which retain some of the physics of electrochemical models, are often used for control-oriented battery modeling since they are computationally efficient; however, they are only valid over very low frequency ranges and C-rates. Empirical equivalent circuit models (ECMs) are also used for control-oriented battery modeling since they are computationally efficient and can describe battery behavior over wide frequency ranges; however, they provide no physical understanding of the battery and, therefore, have limited applicability. Further, fractional order terms (e.g., Warburg impedances) are often employed, making the models unwieldy for use in the time domain. This work provides a control-oriented battery model that combines the benefits of SPM and ECM models, while overcoming their limitations. The proposed model incorporates some of the battery physics found in electrochemical models, can easily be used in both the time and frequency domains, and describes battery behavior over its entire frequency range. A linearized single particle model, which incorporates key electrochemical parameters, is used for modeling battery physics at very low frequencies. For low frequencies, integer-order linear systems are used to approximate diffusion physics described by Warburg impedances, and high frequency behavior is modeled by the double layer capacitance effect. The proposed battery model is more computationally efficient than full electrochemical models since it does not require the solution of PDEs, is accurate for a wider frequency range than the SPM considered in this paper, and does not suffer from the unwieldiness and limited applicability of empirical ECMs. Finally, the model is validated in the time and frequency domains via a comparison to pseudo-two-dimensional (P2D) model simulations and experimental data.

25 ENERGY STORAGE↗

Liquid-Cooled Heat Sink Optimization for Thermal Imbalance Mitigation in Wide-Bandgap Power Modules

Power semiconductor die placement on substrates used in high-power modules is generally optimized to minimize electrical parasitic (e.g., stray inductance, common-mode capacitance), taking into account the minimum spacing between semiconductor dies for thermal decoupling. The layout assumes sufficient heat spreading and transfer from dies to the cooling structure. Insulated metal substrate-based power module designs may lead to asymmetrical thermal resistance across the dies, which may cause significant temperature differences among the devices. Such unintentional thermal asymmetries can lead to oversizing the cooling system design or underusing the semiconductor power processing capability. This article proposes a thermal imbalance mitigation method that uses evolutionary optimized liquid-cooled heat sinks to improve the thermal loading among devices.

42 ENGINEERING↗

Transition to Online Cable Insulation Condition Monitoring

Nuclear power plant cables were originally qualified for 40 year life and generally have not required specific test verification to assure service availability through the initial plant qualification period. However, license renewals to 60 and 80 years of operation require a cable aging management program that depends on some form of test and verification to assure fitness for service. Environmental stress (temperature, radiation, chemicals, water, and mechanical) varies dramatically within a nuclear power plant and, in some cases, cables have degraded and required repair or replacement before their qualified end-of-life period. In other cases, cable conditions have been mild and dependable cable performance confirmed to extend well beyond the initial qualified life. Most offline performance-based testing requires cables to be de-coupled and de-energized for specially trained technicians to perform testing. These offline tests constitute an expensive operational burden that limits the economic viability of nuclear power plants. Although initial investment may be higher, new online test practices are emerging as options or complements to offline testing that avoid or minimize the regularly scheduled offline test burden. These online methods include electrical and fiber-optic partial discharge measurement, spread spectrum time or frequency domain reflectometry, distributed temperature profile measurements, and local interdigital capacitance measurement of insulation characteristics. Introduction of these methods must be supported by research to confirm efficacy plus either publicly financed or market driven investment to support the start-up expense of cost-effective instrumentation to monitor cable condition and assure reliable operation. This work summarizes various online cable assessment technologies plus introduces a new cable motor test bed to assess some of these technologies in a controlled test environment.

Glass, Samuel W.↗

Periodically pulsed laser-assisted tunneling may generate terahertz radiation

In this work, a mode-locked ultrafast laser focused on the tunneling junction of a scanning tunneling microscope superimposes harmonics of the laser pulse repetition frequency on the direct current tunneling current. The power measured at the first 200 harmonics (up to 14.85 GHz) varies as the inverse square of the frequency due to shunting by the stray capacitance and the resistance in the circuit. However, Fourier analysis suggests that within the tunneling junction there is no significant decay of the harmonics until terahertz frequencies comparable to the reciprocal of the laser pulse-width. Two different types of analysis are used to model the generation of the frequency comb within the tunneling junction. Similar results are obtained, suggesting that the harmonics may extend to terahertz frequencies. Thus, the tunneling junction may be used as a subnanometer sized source of terahertz radiation.

36 MATERIALS SCIENCE↗

Miniaturized magnet-less RF electron trap. II. Experimental verification

Atomic microsystems have the potential of providing extremely accurate measurements of timing and acceleration. But, atomic microsystems require active maintenance of ultrahigh vacuum in order to have reasonable operating lifetimes and are particularly sensitive to magnetic fields that are used to trap electrons in traditional sputter ion pumps. Our paper presents an approach to trapping electrons without the use of magnetic fields, using radio frequency (RF) fields established between two perforated electrodes. The challenges associated with this magnet-less approach, as well as the miniaturization of the structure, are addressed. These include, for example, the transfer of large voltage (100–200 V) RF power to capacitive loads presented by the structure. The electron trapping module (ETM) described here uses eight electrode elements to confine and measure electrons injected by an electron beam, within an active trap volume of 0.7 cm 3 . The operating RF frequency is 143.6 MHz, which is the measured series resonant frequency between the two RF electrodes. It was found experimentally that the steady state electrode potentials on electrodes near the trap became more negative after applying a range of RF power levels (up to 0.15 W through the ETM), indicating electron densities of ≈3 × 10 5 cm -3 near the walls of the trap. The observed results align well with predicted electron densities from analytical and numerical models. The peak electron density within the trap is estimated as ~1000 times the electron density in the electron beam as it exits the electron gun. Finally, this successful demonstration of the RF electron trapping concept addresses critical challenges in the development of miniaturized magnet-less ion pumps.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Electrical and optical characterization of CdTe solar cells with CdS and CdSe buffers—A comparative study

A study is reported comparing the electrical and optical properties of CdTe solar cells, prepared using CdS and CdSe buffer layers, to investigate defects in the bulk and interface, carrier transport, and recombination. Temperature dependent capacitance-voltage measurement and admittance spectroscopy were used to extract carrier concentration, resistivity, charge carrier mobility, and their temperature dependence. We identify the presence of two defect signatures corresponding to carrier freeze-out and the formation of a Schottky back-contact barrier. The back-contact barrier height (≈ 300 meV) extracted from the temperature dependent current density-voltage (JVT) experiment was confirmed by conventional admittance spectroscopy. The activation energies of mobility (resistivity) are 101.2 ± 2.5 meV (92.6 ± 2.3 meV) and 84.7 ± 2.7 meV (77.6 ± 4.5 meV) for CdS and CdSe buffer layers, respectively. Intensity dependent photoluminescence analysis demonstrates that the CdSe/CdTe device exhibits lower radiative efficiency than the CdS/CdTe device. This confirms the presence of higher defects in CdSe/CdTe device corroborated by temperature-dependent V OC analysis. Here, the comparative electrical and optical analysis provides insight to improving the performance of CdTe solar cell device by selenization.

14 SOLAR ENERGY↗

Design and fabrication of ion traps for low RF power dissipation

Large surface-electrode ion traps with multiple trapping regions and junctions are a natural approach to scaling trapped ion quantum computers, supporting the connectivity and ion counts necessary for complex quantum algorithms. However, a major hurdle in this scaling is on-chip power dissipation from the applied RF voltage, which increases at a rate between linear and cubic relative to trap size, depending on whether the losses are dielectric or Ohmic. Here, we present two versions of a trap with features designed to reduce both types of RF power dissipation. The first variant contains a raised RF electrode that increases the electrode–ground distance to reduce capacitance. Different DC voltage sources are demonstrated on this trap to show that technical noise before the filter remains the dominant source of voltage noise and therefore motional heating. The second variant additionally includes a method for removing dielectric from beneath the RF electrode to further reduce dielectric losses. These traps were demonstrated at room temperature with 40 Ca + ions. In conclusion, the similar heating rates and heating rate axial frequency dependencies between 2.4 and 3.0 MHz illustrate that this dielectric modification is not detrimental to trap performance.

Sterk, J. D. [Sandia National Laboratories (SNL-NM↗

Scaling of atomic layer etching of SiO 2 in fluorocarbon plasmas: Transient etching and surface roughness

Fabricating sub-10 nm microelectronics places plasma processing precision at atomic dimensions. Atomic layer etching (ALE) is a cyclic plasma process used in semiconductor fabrication that has the potential to remove a single layer of atoms during each cycle. In self-limiting ideal ALE, a single monolayer of a material is consistently removed in each cycle, typically expressed as EPC (etch per cycle). In plasma ALE of dielectrics, such as SiO 2 and Si 3 N 4 , using fluorocarbon gas mixtures, etching proceeds through deposition of a thin polymer layer and the process is not strictly self-terminating. As a result, EPC is highly process dependent and particularly sensitive to the thickness of the polymer layer. In this paper, results are discussed from a computational investigation of the ALE of SiO 2 on flat surfaces and in short trenches using capacitively coupled plasmas consisting of a deposition step (fluorocarbon plasma) and an etch step (argon plasma). We found that ALE performance is a delicate balance between deposition of polymer during the first half cycle and etching (with polymer removal) during the second half cycle. In the absence of complete removal of the overlying polymer in each cycle, ALE may be transient as the polymer thickness grows with each cycle with a reduction in EPC until the thickness is too large to enable further etching. Small and statistical amounts of polymer left from a previous cycle can produce statistical variation in polymer thickness on the next cycle, which in turn can lead to a spatially dependent EPC and ALE roughness. Based on synergy between T i (sputtering time) and T p (passivation time), dielectric ALE can be described as having three modes: deposition, roughening surface (transitioning to etch-stop), and smooth surface with steady-state EPC.

Materials Science↗

Voltage waveform tailoring for high aspect ratio plasma etching of SiO 2 using Ar/CF 4 /O 2 mixtures: Consequences of ion and electron distributions on etch profiles

The quality of high aspect ratio (HAR) features etched into dielectrics for microelectronics fabrication using halogen containing low temperature plasmas strongly depends on the energy and angular distribution of the incident ions (IEAD) onto the wafer, as well as potentially that of the electrons (EEAD). Positive ions, accelerated to high energies by the sheath electric field, have narrow angular spreads and can penetrate deeply into HAR features. Electrons typically arrive at the wafer with nearly thermal energy and isotropic angular distributions and so do not directly penetrate deeply into features. These differences can lead to positive charging of the insides of the features that can slow etching rates and produce geometric defects such as twisting. In this work, we computationally investigated the plasma etching of HAR features into SiO 2 using tailored voltage waveforms in a geometrically asymmetric capacitively coupled plasma sustained in an Ar/CF 4 /O 2 mixture at 40 mTorr. The tailored waveform consisted of a sinusoidal wave and its higher harmonics with a fundamental frequency of 1 MHz. We found that some degree of control of the IEADs and EEADs is possible by adjusting the phase of higher harmonics φ through the resulting generation of electrical asymmetry and electric field reversal. However, the IEADs and EEADs cannot easily be separately controlled. The control of IEADs and EEADs is inherently linked. The highest quality feature was obtained with a phase angle φ = 0° as this value generated the largest (most negative) DC self-bias and largest electric field reversal for accelerating electrons into the feature. That said, the consequences of voltage waveform tailoring (VWT) on etched features are dominated by the change in the IEADs. Although VWT does produce EEADs with higher energy and narrower angular spread, the effect of these electrons on the feature compared to thermal electrons is not large. Finally, this smaller impact of VWT produced EEADs is attributed to thermal electrons being accelerated into the feature by electric fields produced by the positive in-feature charging.

47 OTHER INSTRUMENTATION↗

Low-temperature electrical properties and barrier inhomogeneities in ITO/β-Ga2O3 Schottky diode

This study reports the electronic properties of the indium tin oxide (ITO)/β-Ga2O3 Schottky diode through the temperature (50–320 K)-dependent current density–voltage, capacitance–voltage, and admittance spectroscopy experiments. The room-temperature turn-on voltage of the ITO/β-Ga2O3 diode was observed to be 0.83 V, and it exhibited a slow increase with decreasing temperature. The ITO/β-Ga2O3 diode's ideality factor (n) varied from 3.92 to 1.05, and the zero-bias Schottky barrier height (φbo) varied from 0.31 to 1.28 eV. The temperature-dependent n and φbo indicate the spatial inhomogeneities of the potential barrier at the Ga2O3-ITO interface. We exploit the Gaussian distribution model to explain the Schottky barrier inhomogeneities, which could be associated with the defects observed by the admittance spectroscopy method.

Engineering↗

Toward the origins of binding energy shifts and “satellites” formation during plasma-XPS measurements

In-plasma x-ray photoelectron spectroscopy (plasma-XPS) emerges as a powerful platform for real-time, in situ chemical analysis under conditions relevant to semiconductor processing and other plasma-enabled technologies. This study investigates the origins of binding energy (BE) shifts and the formation of “satellite” peaks observed during plasma-XPS measurements across conductive, dielectric, and gas-phase systems. Using a standard laboratory-based ambient pressure XPS apparatus coupled with an alternating current (AC)-driven capacitively coupled plasma source, we demonstrate that metastable surface species, such as transient Au oxides, can be detected during plasma exposure, revealing chemical states that are hardly accessible using conventional ultrahigh vacuum (UHV) XPS. In dielectric samples (e.g., undoped diamond, sapphire), we observe pressure- and plasma-type-dependent BE shifts of more than 50 eV, attributed to x-ray-induced and plasma-mediated surface charging. These shifts are mitigated at higher pressures/plasmas or in electronegative plasmas (e.g., O 2 ), the latter due to enhanced charge compensation mechanisms involving slow negative ions. For gas-phase species, AC-plasma excitation leads to spectral broadening and the emergence of “satellite” peaks with energy separations of a few electron volts, linked to oscillating local plasma potentials in the probing volume. Furthermore, these findings highlight the complex and important interplay between plasma parameters, surface charging, and local electric fields in shaping XPS spectra. Overall, plasma-XPS emerges as a critical metrological tool for probing transient surface chemistry, with implications for semiconductor processing, material synthesis, and plasma diagnostics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Machine learning control of an elliptically bent hard x-ray mirror

This article showcases the high-resolution control of an elliptically bent hard X-ray mirror optics at the Advanced Photon Source. The mirror uses a compact laminar flexure bending mechanism to achieve elliptical shapes covering a large range of focal distances. An array of capacitive sensors are used as a surface profiler for in-situ monitoring of the mirror shape. Machine learning and control techniques were used to change the mirror shape and focus the incident X-ray at predefined focal planes. The mirror surface shape error can be controlled to be within 40 nm rms with high repeatability. This technique gives the capability to focus incident X-ray beam within a range of focal distances corresponding to shape deformation range of a mirror optics. This work would be beneficial for controlling similar adaptive optics for multiple adaptive optics systems.

adaptive optics↗

Prototype design and experimental tests of a zoom mirror system for the APS upgrade

Mirror-based zoom optics systems can offer variable focal spot sizes over a wide range, which is essential for coherent nanoprobe beamlines, such as the proposed Atomic beamline in the Advanced Photon Source (APS) upgrade project. The success of the zoom mirror system in the nano-focusing regime requires the development of high-precision deformable mirrors, in-situ surface profilers and wavefront sensors, and advanced feedback control system. A prototype 1-D zoom mirror system consists of two vertical focusing mirrors was designed, assembled, and tested at the APS 1-BM beamline. The system consists of a bender-based mirror with a capacitive-sensorarray-based real-time mirror profiler, a bimorph adaptive mirror, and a grating interferometer for the wavefront monitoring. In this work, we present the design and test results of the prototype system demonstrating its zoom focusing capability.

adaptive optics↗