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At least 1,765 records · Page 98

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NASA NTRS1981

Detection of strength limiting defects in cellular glasses by dielectric measurements

The foamed glasses that are being considered for structural support in solar thermal energy system silvered glass concentrator mirrors are assessed for strength-limiting defects by a nondestructive technique which measures the capacitance of well defined regions. The feasibility of locating large defects is demonstrated for the case of one type of cellular mass. Observed capacitance variations are believed to be due to small voids or other irregularities in the material. If the defects are equal to or greater than approximately 20 times the glass matrix pore size, they can be resolved with sufficient accuracy to delineate their spatial extent.

Gammell, P. M.↗

NASA NTRS1982

Recognizing defects in carbon-fiber reinforced plastics

The damage tolerance of structures made of carbon-fiber-reinforced plastic is tested under various loads. Test laminate (73/1/1, 24/9/1, 1465 A) specimens of thickness 1.5-3.2 mm with various defects were subjected to static and dynamic loads. Special attention was given to delamination, and ultrasonic C-scans were made on the specimens. It was shown that cracks from even small defects are detected with great accuracy. The same probes were also X rayed; defects that could not be detected under ordinary X rays were bored and studied under vacuum by a contrast technique. The nondestructive ultrasonic and X ray tests were controlled by partially destructive tests, and good agreement was observed.

Schuetze, R.↗

NASA NTRS1985

Oxygen and carbon impurities and related defects in silicon

Oxygen and carbon are the predominant impurities in Czochralski-grown silicon. The incorporation of oxygen and carbon during crystal growth is reviewed and device effects are discussed. Methods for controlling oxygen and carbon incorporation during crystal growth are discussed and results supporting a segregation coefficient of k=0.5 for oxygen are presented. The nucleation and precipitation behavior of oxygen is complex. Temperature and doping level effects which add insight into the role of point defects in the nucleation process are highlighted. In general, precipitation is found to be retarded in N+ and P+ silicon. The types and quantities of defects resulting from the oxygen precipitates is of interest as they are technologically useful in the process called intrinsic gettering. A comparison is made between the available defect sites and the quantities of metallic impurities present in a typical wafer which need to be gettered. Finally, a discussion of the denuded-zone, intrinsic-gettered (DZ-IG) structure on device properties is presented.

Pearce, C. W.↗

NASA NTRS1985

Nonstoichiometric defects in GaAs and the EL2 bandwagon

In the present paper, an attempt is made to formulate a common framework for a discussion of nonstoichiometric defects, especially EL2 and dislocations. An outline is provided of the most important settled and unsettled issues, taking into account not only fundamental interests, but also urgent needs in advancing IC technology. Attention is given to stoichiometry-controlled compensation, the expected role of melt stoichiometry in electrical conductivity for the basic atomic disorders, defect equilibria-dislocations and EL2, and current issues pertaining to the identification of EL2. It is concluded that nonstoichiometric defects play a critical role in the electronic properties of GaAs and its electronic applications. Very significant progress has been recently made in learning how to adjust melt stoichiometry in order to maximize its beneficial effects and minimize its detrimental ones.

Lagowski, J.↗

NASA NTRS1985

Defects in silicon effect on device performance and relationship to crystal growth conditions

A relationship between material defects in silicon and the performance of electronic devices will be described. A role which oxygen and carbon in silicon play during the defects generation process will be discussed. The electronic properties of silicon are a strong function of the oxygen state in the silicon. This state controls mechanical properties of silicon efficiency for internal gettering and formation of defects in the device's active area. In addition, to temperature, time, ambience, and the cooling/heating rates of high temperature treatments, the oxygen state is a function of the crystal growth process. The incorporation of carbon and oxygen into silicon crystal is controlled by geometry and rotation rates applied to crystal and crucible during crystal growths. Also, formation of nucleation centers for oxygen precipitation is influenced by the growth process, although there is still a controversy which parameters play a major role. All these factors will be reviewed with special emphasis on areas which are still ambiguous and controversial.

Jastrzebski, L.↗

NASA NTRS1986

The influence of defects of the fatigue resistance of butt and girth welds in A106B steel

This three-phase study was directed at developing a fitness for service defect acceptance criteria for welds with defect indications. The study focussed on A106 Gr. B steel pipe. The first phase involved a literature search and critical review to develop the preliminary acceptance criteria to the extent permitted by the data. The second phase developed data for flat plate, wall segment, and vessel specimens containing artificial or natural planar or volumetric defects. The final phase developed acceptance criteria from the test data.

Leis, B. N.↗

NASA NTRS1986

The continuing battle against defects in nickel-base superalloys

In the six decades since the identification of age hardenable nickel-base superalloys their compositions and microstructures have changed markedly. Current alloys are tailored for specific applications. Thus their microstructures are defined for that application. This paper briefly reviews the evolution of superalloy microstructures and comments on the appearance and implications of microstructural defects in high performance superalloys. It is seen that new alloys and proceses have generated new types of defects. Thus as the industry continues to develop new alloys and processes it must remain vigilant toward the identification and control of new types of defects.

Dreshfield, R. L.↗

NASA NTRS1985

Metastability of the midgap level EL 2 in GaAs - Relationship with the As antisite defect

It is found that the rate of the photoinduced transition of the GaAs midgap level EL 2 to its metastable state increases as its occupation increases. High-resolution optical spectra of this transition exhibit a sharp peak very similar to the no-phonon line of the intracenter absorption of the As antisite defect. These findings show that the transition to the metastable state is initiated from the ground state 1A1, and it is finalized via the excited state 1T2 of the neutral As antisite defect. They thus provide a new basis for the critical assessment of the EL 2 metastability models and further confirmation of the association of EL 2 with the isolated As antisite defect.

Skowronski, M.↗

NASA NTRS1986

A point defect model for nickel electrode structures

The Raman spectra for nickel electrode active mass indicate a single formula-unit crystallographic unit cell of the layered NiOOH-type. Empirical stoichiometric formulas require that extensive point defects, cation dopants and nickel vacancies, be incorporated on nickel sites. Structural differences between the alpha/gamma and beta/beta cycles, and the influence of cobalt addition on the structure will be discussed in terms of the point defect model. Other empirical data supporting the point defect model will be considered.

Loyselle, Patricia L.↗

NASA NTRS1990

Topological defects in extended inflation

The production of topological defects, especially cosmic strings, in extended inflation models was considered. In extended inflation, the Universe passes through a first-order phase transition via bubble percolation, which naturally allows defects to form at the end of inflation. The correlation length, which determines the number density of the defects, is related to the mean size of bubbles when they collide. This mechanism allows a natural combination of inflation and large scale structure via cosmic strings.

Copeland, Edmund J.↗

NASA NTRS1992

Templates Aid Removal Of Defects From Castings

Templates used to correlate defects in castings with local wall thicknesses. Placed on part to be inspected after coated with penetrant dye. Positions of colored spots (indicative of defects) noted. Ultrasonic inspector measures thickness of wall at unacceptable defects only - overall inspection not necessary.

Hendrickson, Robert G.↗

NASA NTRS1991

Thermal imaging of graphite/epoxy composite samples with fabricated defects

Consideration is given to a thermal inspection system for quickly inspecting large area composites for increased reliability and maintainability of helicopters resulting from improved quality assurance manufacturing. The infrared camera/image processor-based inspection system was used to image defects in composites. Noncontacting and single-sided measurements were performed on graphite/epoxy samples with fiber volume fraction variations, fabricated porosity, impact damage, and inclusions in incurred lay ups. These defects were imaged by determining the variations in the cooling rates caused by differences in through ply thermal diffusivity. Attention is also given to the system's sensitivity to measuring the defects due to sample thickness.

Zalameda, Joseph N.↗

NASA NTRS1953

Relative Importance of Various Sources of Defect-Producing Hydrogen Introduced into Steel During Application of Vitreous Coatings

When porcelain enamels or vitreous-type ceramic coatings are applied to ferrous metals, there is believed to be an evolution of hydrogen gas both during and after the firing operation. At elevated temperatures rapid evolution may result in blistering while if hydrogen becomes trapped in the steel during the rapid cooling following the firing operation gas pressures may be generated at the coating-metal interface and flakes of the coating literally blown off the metal. To determine experimentally the relative importance of the principal sources of the hydrogen causing the defects, a procedure was devised in which heavy hydrogen (deuterium) was substituted in turn for regular hydrogen in each of five possible hydrogen-producing operations in the coating process. The findings of the study were as follows: (1) the principal source of the defect-producing hydrogen was the dissolved water present in the enamel frit that was incorporated into the coating. (2) the acid pickling, the milling water, the chemically combined water in the clay, and the quenching water were all minor sources of defect-producing hydrogen under the test conditions used. Confirming experiments showed that fishscaling could be eliminated by using a water-free coating.

Moore, Dwight G↗

NASA NTRS1994

Accuracy enhancements for overset grids using a defect correction approach

A defect-correction approach is investigated as a means of enhancing the accuracy of flow computations on overset grids. Typically, overset-grid techniques process and pass information only at grid boundaries. In the current approach, error corrections at all overlapped interior points are injected between grids by using a defect-correction scheme. In some cases this is found to enhance the overall accuracy of the overset-grid method. Locally refined overset grids can be used to provide an efficient solution-adaptation method. The defect correction can also be ultilized as an error-correction technique for a coarse grid by evaluating the residual using a fine base grid, but solving the implicit equations only on the coarse grid. Numerical examples include an accuracy and dissipation study of an unsteady decaying vortex flow, the flow over a NACA 0012 airfoil, and the flow over a mulit-element high-lift airfoil.

Rogers, Stuart E.↗

NASA NTRS1995

Research In Diagnosing Bearing Defects From Vibrations

Report describes research in bearing-defect signature analysis - use of vibration-signal analysis to diagnose defects in roller and ball bearings. Experiments performed on bearings in good condition and other bearings in which various parts scratched to provide known defects correlated with vibration signals. Experiments performed on highly instrumented motor-driven rotor assembly at speeds up to 10,050 r/min, using accelerometers, velocity probes, and proximity sensors mounted at various locations on assembly to measure vibrations.

Zoladz, T.↗

NASA NTRS1995

Analysis of the Defect Structure of B2 Feal Alloys

The Bozzolo, Ferrante and Smith (BFS) method for alloys is applied to the study of the defect structure of B2 FeAI alloys. First-principles Linear Muffin Tin Orbital calculations are used to determine the input parameters to the BFS method used in this work. The calculations successfully determine the phase field of the B2 structure, as well as the dependence with composition of the lattice parameter. Finally, the method is used to perform 'static' simulations where instead of determining the ground state configuration of the alloy with a certain concentration of vacancies, a large number of candidate ordered structures are studied and compared, in order to determine not only the lowest energy configurations but other possible metastable states as well. The results provide a description of the defect structure consistent with available experimental data. The simplicity of the BFS method also allows for a simple explanation of some of the essential features found in the concentration dependence of the heat of formation, lattice parameter and the defect structure.

Bozzolo, Guillermo↗

NASA NTRS1997

Process and Radiation Induced Defects in Electronic Materials and Devices

Process and radiation induced defects are characterized by a variety of electrical techniques, including capacitance-voltage measurements and charge pumping. Separation of defect type into stacking faults, displacement damage, oxide traps, interface states, etc. and their related causes are discussed. The defects are then related to effects on device parameters. Silicon MOS technology is emphasized. Several reviews of radiation effects and silicon processing exist.

Washington, Kenneth↗

NASA NTRS1999

Approximation of the Newton Step by a Defect Correction Process

In this paper, an optimal control problem governed by a partial differential equation is considered. The Newton step for this system can be computed by solving a coupled system of equations. To do this efficiently with an iterative defect correction process, a modifying operator is introduced into the system. This operator is motivated by local mode analysis. The operator can be used also for preconditioning in Generalized Minimum Residual (GMRES). We give a detailed convergence analysis for the defect correction process and show the derivation of the modifying operator. Numerical tests are done on the small disturbance shape optimization problem in two dimensions for the defect correction process and for GMRES.

Arian, E.↗