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Results for “3D Poisson equation”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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8 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

Cell volume control at a surface for three-dimensional grid generation packages

An alternate method of calculating the cell size for orthogonality control in the solution of Poisson's 3D space equations is presented. The method provides the capability to enforce a better initial guess for the grid distribution required for boundary layer resolution. This grid point distribution is accomplished by enforcing grid spacing from a grid block boundary where orthogonality is required. The actual grid spacing or cell size for that boundary is determined by the two or four adjacent boundaries in the grid block definition, which are two dimensional grids. These two dimensional grids are in turn defined by the user using insight into the flow field and boundary layer characteristics. The adjoining boundaries are extended using a multifunctional blending scheme, with user control of the blending and interpolating functions to be used. This grid generation procedure results in an enhanced computational fluid dynamics calculation by allowing a quicker resolution of the configuration's boundary layer and flow field and by limiting the number of grid re-adaptations. The cell size specification calculation was applied to a variety of configurations ranging from axisymmetric to complex three-dimensional configurations. Representative grids are shown for the Space Shuttle and the Langley Lifting Body (HL-20).

Alter, Stephen J.↗
NASA NTRS1993

Bgridi - Interactive three-dimensional turbomachinery grid generation system with applications

An interactive, graphics-based grid generation system for 3D turbomachinery geometries has been developed. The system consists of separate modules for geometry modeling and grid generation. The grid generation method generates a series of 2D grids in the blade-to-blade passage to build up the 3D grid. A Poisson equation with forcing functions selected to control orthogonality and spacing on all boundaries is solved to generate the grid. Interactive definition of Bezier curves and surfaces as internal boundaries is used to improve control of grid quality. A multi-block data structure simpifies the creation of structured H-grids about complex turbomachinery geometries. The multi-block strategy facilitates the creation of a grid in the tip flow region, which is an important contributor to losses within the passage. The grid generation system is applied to several complex geometries including a simple radial impeller, a conventional turbine rotor, the SSME LOX turbine rotor with and without a tip flow grid, a multi-passage inducer-impeller, and a tip-flow cascade. In addition, a calculation of the tip-flow cascade flow field is shown.

Shoemaker, J. M.↗
NASA NTRS1992

Multigrid acceleration of a fractional-step solver in generalized curvilinear coordinate systems

The efficiency of the INS3D-fractional step (FS) code has been significantly enhanced by accelerating the Poisson solver with a multigrid (MG) method. This is apparently the first implementation of the MG method for solving the 3D discrete Poisson-like equation obtained in the derivation of FS solution methods for the incompressible Navier-Stokes equations in generalized nonorthogonal coordinate systems using a staggered arrangement of the variables. The MG solver is insensitive to the geometry, even in cases of highly nonorthogonal clustered meshes, as well as to the free parameters of MG methods.

Rosenfeld, Moshe↗
NASA NTRS1999

Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Sub 50 nm MOSFETs: a Statistical 3D 'Atomistic' Simulation Study

A 3D 'atomistic' simulation study of random dopant induced threshold voltage fluctuations and lowering in sub 50 nm MOSFETs is presented. The attention is focused mainly on devices with 30 nm effective channel length which represent the expected level of scaling at the end of the Silicon Roadmap. An efficient algorithm, based on a single 3D ap solution of the Poisson equation and a simplified current continuity equation, is used in the simulations. Large samples of microscopically different devices (typically 200) arc used in order to obtain statistically reliable results. The influence of different aspects of the conventional MOSFET design on the threshold voltage fluctuations and lowering are investigated. Results for fluctuation resistant device architectures based on low-doped epitaxial channel MOSFETs are also presented.

Asenov, Asen↗
NASA NTRS1998

Higher-Order Compact Schemes for Numerical Simulation of Incompressible Flows

A higher order accurate numerical procedure has been developed for solving incompressible Navier-Stokes equations for 2D or 3D fluid flow problems. It is based on low-storage Runge-Kutta schemes for temporal discretization and fourth and sixth order compact finite-difference schemes for spatial discretization. The particular difficulty of satisfying the divergence-free velocity field required in incompressible fluid flow is resolved by solving a Poisson equation for pressure. It is demonstrated that for consistent global accuracy, it is necessary to employ the same order of accuracy in the discretization of the Poisson equation. Special care is also required to achieve the formal temporal accuracy of the Runge-Kutta schemes. The accuracy of the present procedure is demonstrated by application to several pertinent benchmark problems.

Wilson, Robert V.↗
NASA NTRS2000

Hierarchical Statistical 3D ' Atomistic' Simulation of Decanano MOSFETs: Drift-Diffusion, Hydrodynamic and Quantum Mechanical Approaches

When MOSFETs are scaled to deep submicron dimensions the discreteness and randomness of the dopant charges in the channel region introduces significant fluctuations in the device characteristics. This effect, predicted 20 year ago, has been confirmed experimentally and in simulation studies. The impact of the fluctuations on the functionality, yield, and reliability of the corresponding systems shifts the paradigm of the numerical device simulation. It becomes insufficient to simulate only one device representing one macroscopical design in a continuous charge approximation. An ensemble of macroscopically identical but microscopically different devices has to be characterized by simulation of statistically significant samples. The aims of the numerical simulations shift from predicting the characteristics of a single device with continuous doping towards estimating the mean values and the standard deviations of basic design parameters such as threshold voltage, subthreshold slope, transconductance, drive current, etc. for the whole ensemble of 'atomistically' different devices in the system. It has to be pointed out that even the mean values obtained from 'atomistic' simulations are not identical to the values obtained from continuous doping simulations. In this paper we present a hierarchical approach to the 'atomistic' simulation of aggressively scaled decanano MOSFETs. A full scale 3D drift-diffusion'atomostic' simulation approach is first described and used for verification of the more economical, but also more restricted, options. To reduce the processor time and memory requirements at high drain voltage we have developed a self-consistent option based on a thin slab solution of the current continuity equation only in the channel region. This is coupled to the Poisson's equation solution in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison with the full self-consistent solution. At low drain voltage only single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. A pilot version of a hydrodynamic 'atomistic' simulator has been developed in order to study the effect of the nonequilibrium, non local transport in decanano MOSFETs on the random dopant induced current fluctuations. For the first time we have also applied the density gradient approach in 3D to investigate the effect of the quantum confinement on the threshold voltage fluctuations. The developed 'atomistic' simulation techniques have been applied to study various fluctuation resistant MOSFET architectures including epitaxial and delta doped devices.

Asenov, Asen↗
NASA NTRS1998

Efficient 3D 'Atomistic' Simulation Technique for Studying of Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Decanano MOSFETs

A 3D 'atomistic' simulation technique to study random dopant induced threshold voltage lowering and fluctuations in sub 0.1 micron MOSFETs is presented. It allows statistical analysis of random impurity effects down to the individual impurity level. Efficient algorithms based on a single solution of Poisson's equation, followed by the solution of a simplified current continuity equation are used in the simulations.

Asenov, Asen↗
NASA NTRS2000

Statistically Reliable 'Atomistic' Simulation of Sub 100 nm MOSFETs

A 3D 'atomistic' simulation technique to study random impurity induced threshold voltage lowering and fluctuations in sub 0. 1 micron MOSFETs is presented. It allows statistical analysis of random impurity effects down to the individual impurity level-Efficient algorithms based on a single solution of Poisson's equation, followed by the solution of a simplified current continuity equation are used in the simulations.

Asenov, Asen↗