Search NASA⌕ Search

SEARCH · Search NASA

Results for “4H-SiC BJT”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

4 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

Static and Switching Characteristics of a 4H-SiC Based BJT to 200 C

Static curves and resistive load switching characteristics of a 600 V, 4 A rated, SiC-based NPN bipolar power transistor (BJT) were observed at selected temperatures from 23 to 200 C. All testing was done in a pulse mode at low duty cycle (approx. 0.1 percent). Turn-on was driven by an adjustable base current pulse and turn-off was accelerated by a negative base voltage pulse of either 7 or 0.6 V. Switching observations were done at base drive currents (I(sub B)) up to 400 mA and collector currents (I(sub C)) up to 4 A, using a 100 OMEGA non-inductive load. At I(sub B) = 400 mA and I(sub C) = 4 A, turn-on times typically varied from 81 to 97 ns, over temperatures from 23 to 200 C. As expected, lowering the base drive greatly extended the turn-on time. Similarly, decreasing the load current to I(sub C) = 1 A with I(sub B) = 400 mA produced turn-on times as short as 30 ns. Over the 23 to 200 C range, with I(sub B) = 400 mA and I(sub C) = 4 A, turn-off times were in the range of 61 to 77 ns with the 7 V sweep-out and 130 to 150 ns with the 0.6 V sweep-out. At a fixed temperature and I(sub C), the turn-off time decreased slightly with decreasing I(sub B), for I(sub B) sufficient to still provide full turn-on. The ratio of conduction to switching losses is estimated, based on the observed I(sub C) transition times and static curves. An estimate at 200 kHz and a 50 percent duty cycle shows that under practicable conditions the two losses can be comparable. Hence the evidence obtained does not support the occasionally voiced concern of necessarily unacceptably high conduction losses in SiC-based BJTs.

Niedra, Janis M.↗
NASA NTRSDate not supplied

Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs

This paper presents results from metal contact processing experiments towards the implementationof durable 500 deg.C high-frequency 4H-SiC bipolar junction transistors (BJTs). Specifically, p-type ohmic contacts have been demonstrated on a 0.25 μm-thick p-type homoepitaxial layer of doping 8 x 1018± 4 x 1018cm-3. Finally, preliminary current-voltage characteristics of fabricated BJTs are presented.

RF SiC↗
NASA NTRS2023

Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs

This paper presents results from metal contact processing experiments towards the implementation of durable 500 °C high-frequency 4H-SiC bipolar junction transistors (BJTs) . Specifically, p -type ohmic contacts have been demonstrated on a 0.25 μm-thick p -type homoepitaxial layer of doping 8 x 10 18 ± 4 x 10 18 cm -3 . Preliminary current-voltage characteristics of fabricated BJTs are presented.

4H-SiC BJT↗
NASA NTRS2006

Switching Characteristics of a 4H-SiC Based Bipolar Junction Transistor to 200 C

Static curves and resistive load switching characteristics of a 600 V, 4 A rated, SiC-based NPN bipolar power transistor (BJT) were observed at selected temperatures from room to 200 C. All testing was done in a pulse mode at low duty cycle (approx.0.1 percent). Turn-on was driven by an adjustable base current pulse and turn-off was accelerated by a negative base voltage pulse of 7 V. These base drive signals were implemented by 850 V, gated power pulsers, having rise-times of roughly 10 ns, or less. Base charge sweep-out with a 7 V negative pulse did not produce the large reverse base current pulse seen in a comparably rated Si-based BJT. This may be due to a very low charge storage time. The decay of the collector current was more linear than its exponential-like rise. Switching observations were done at base drive currents (I(sub B)) up to 400 mA and collector currents (I(sub C)) up to 4 A, using a 100 Omega non-inductive load. At I(sub B) = 400 mA and I(sub C) = 4 A, turn-on times typically varied from 80 to 94 ns, over temperatures from 23 to 200 C. As expected, lowering the base drive greatly extended the turn-on time. Similarly, decreasing the load current to I(sub C) = 1 A with I(sub B) = 400 mA produced turn-on times as short as 34 ns. Over the 23 to 200 C range, with I(sub B) = 400 mA and I(sub C) = 4 A, turn-off times were in the range of 72 to 84 ns with the 7 V sweep-out.

Niedra, Janis M.↗