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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Isolated Single-stage Three-phase AC/DC Converter using Bidirectional Switches

The advent of the SiC Bidirectional FET (BiDFET), a monolithic 1.2 kV bidirectional switch, has rendered the single-stage three-phase AC/DC converter topology a promising approach for implementing AC/DC converters. This topology, which integrates a full-bridge converter with a single-phase to three-phase matrix converter via a high-frequency transformer, is particularly suitable for applications requiring galvanic isolation, buck-boost functionality, and bidirectional power flow. The single-stage design eliminates the need for bulky and unreliable electrolytic capacitors, and utilizes a single magnetic component for power transfer. In the matrix converter, bidirectional switches, which were traditionally implemented using combinations of multiple semiconductor devices such as MOSFETs, IGBTs, and diodes, can now be realized using the single-chip solution, BiDFET. This advancement leads to a lower switch count, compact converter implementation, with lower inductance commutation cells, thereby enhancing the overall efficiency and compactness of the system. The paper presents a unified model of the converter, considering all control parameters, including the duty cycles and phase shift of transformer voltages. Detailed expressions for power transfer, transformer currents, and currents at AC and DC ports are provided. Additionally, the paper outlines the conditions necessary for soft-switching of all switches and the commutation schemes required for the practical implementation of the matrix converter modulation scheme. A hardware prototype of a 10 kW, 480 VRMS, LL/ 800 V AC/DC system has been developed, and experimental results are presented to demonstrate its performance.

BiDFET↗
DOE OSTI2023

Bidirectional Three-phase Current Source Converter based Buck-boost AC/DC System using Bidirectional Switches

The 1.2 kV 4H-SiC BiDirectional Field Effect Transistor (BiDFET) is the first monolithic SiC bidirectional switch, which offers a lower voltage drop and semiconductor devices count alternative to the reverse-voltage-blocking (RB) switch used in the current-source converters (CSC). The bidirectional switch based CSC also allows DC-link current reversal for bidirectional power flow and provides multiple system-level benefits in a buck-boost AC/DC system consisting of buck-type DC/DC converter and CSC. This paper discusses the selection of buck converter duty cycle and CSC modulation index for the system’s buck-boost operation with a wide variation in DC voltage. CSC modulation schemes categorized based on the number of hard-turn-on transitions per switching cycle are also analyzed along with the three-step and four-step commutation schemes that are essential for the CSC commutation cells. Finally, the different schemes are evaluated and compared through the experimental results of a 10 kW, 480 VRMS, LL/ (400 − 800) V AC/DC system.

Bidirectional switches, four-quadrant switches, cu↗
DOE OSTI2025

AC to AC Solid State Transformer with Bidirectional Switches

This report details the work of the 3-year project for the AC-to-AC Solid State Transformer with Bidirectional Switches project devoted to developing and demonstrated a Type I Solid State Transformer. This report details the design, fabrication, and evaluation of both three-phase and single-phase versions of this solid state transformer operating as a single module, modules in parallel, and modules in cascade. Additionally, this report details the fabrication and evaluation of custom Silicon Carbide bidirectional switches to enable this topology with a comparison between monolithically integrated bidirectional switches as well as co-packaged back-to-back unidirectional devices. Finally, results for custom-fabricated Fe 4 N/ferrite laminated toroidal cores for high frequency transformers are present.

42 ENGINEERING↗
DOE OSTI2025

Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV

Here, this work demonstrates a GaN enhancement-mode monolithic bidirectional switch (MBDS) with breakdown voltage (BV) higher than 3.3 kV in both polarities. This MBDS is realized on a dual p-GaN gate high electron mobility transistor (HEMT) platform on sapphire substrate. It features a novel dual junction termination extension design for electric field management, which is built on the p-GaN layer in the gate stack and does not require epitaxial regrowth. The GaN MBDS exhibits symmetric on-state characteristics in both directions with a threshold voltage (V th ) of 0.6 V and a low specific on-resistance (R on,sp ) of 5.6 m Ω · cm2. This device presents the highest BV, as well as one of the best BV and R on,sp trade-offs, in all the reported MBDS devices. The R on,sp is lower than the performance limit of conventional BDS realized by two discrete devices. This 3.3 kV GaN MBDS opens the door for developing new circuit topologies and advancing system performance in medium-voltage power electronics.

42 ENGINEERING↗
DOE OSTI2023

Design and Optimization of High-frequency Transformer for Isolated Single-Stage Three-Phase AC/DC Converter using Bidirectional Switches

This paper presents the design and optimization of the high-frequency transformer for an isolated single-stage threephase AC/DC converter enabled by the 4H-SiC BiDirectional Field Effect Transistor (BiDFET). Non-dominated Sorting Genetic Algorithm II (NSGA-II) is used to perform a multiobjective optimization to minimize loss, weight, and volume. A 20 kW, 50 kHz hardware prototype based on the selected optimal point is characterized by a power amplifier. The finite element analysis simulation results are also presented to validate the core magnetic flux density and winding electric field strength. The experimental prototype was tested at 800 Vdc/480 Vrms at 10 kW rated power.

BiDFET, High-frequency transformer, Multiobjective↗
DOE OSTI2023

Analysis and Characterization of Four-quadrant Switches based Commutation Cell

A four-quadrant switch (FQS) blocks either polarity voltage and controls current flow in both directions. Unlike voltage-source converters, in which two-quadrant switches operate over a narrow voltage range, four-quadrant switches are required to operate over a wide range of both voltage and current in applications such as matrix converters and current-source converters. Furthermore, matrix converters require multi-step commutation schemes compared to two-step schemes for current-bidirectional switch based voltage-source converters and voltage-bidirectional switch based current-source converters. This paper provides a generalized overview of commutation schemes used for two and four quadrant switches based two-level commutation cells, identifies comparison indices for FQS commutation schemes, and discusses the need for adaptive commutation-step times for wide voltage and current variation applications. Also, the static and dynamic characteristics of 1.2 kV rated FQS implementations utilizing commercial SiC MOSFETs from four different manufacturers and novel monolithic SiC BiDirectional Field Effect Transistor (BiDFET) have been reported.

Commutation cell, four quadrant switch, SiC Bidire↗
DOE OSTI2024

Analysis of AC-DC Converters for Grid-tied High Temperature Steam Electrolysis Systems

Grid-tied HTSE systems have the prospects to produce clean hydrogen enabling power and broad energy systems decarbonization. Most commercially available power electronic converter systems (PECS) are designed for batteries, solar PVs, wind, and other well-established renewable energy resources. Standards (such as IEEE 1547, UL 1741, CA Rule-21, HI Rule-14) exist for PECS used for renewable energy systems such as battery storage and solar PVs. However, those that consider the dynamic behavior of HTSEs and that can be used for large-scale H2 systems are yet to be developed. This paper investigates the performance of these PECS for the HTSE application that are set up at the Idaho National Laboratory for hydrogen production testing, research and development. In particular, the performance analysis of two grid-tied PECS (A and B) is conducted for a 100 kW solid oxide HTSE system. System A consists of 6 units of 30kW MOSFET-switched bidirectional AC-DC rectifier while system B has a single unit of 150kW thyristor-switched ACDC rectifier. Both systems are connected to the HTSE stacks via a DC-DC converter. Different operational conditions of the HTSE system are tested to analyze the dynamic response of the HTSE’s PECS. The experimental results show the need to develop advanced control strategies for PECS that incorporates the dynamics of HTSE systems for improved performance.

08 - HYDROGEN↗
DOE OSTI2025

Analysis of AC-DC Converters for Grid-tied High Temperature Steam Electrolysis Systems

Grid-tied HTSE systems have the prospects to produce clean hydrogen enabling power and broad energy systems decarbonization. Most commercially available power electronic converter systems (PECS) are designed for batteries, solar PVs, wind, and other well-established renewable energy resources. Standards (such as IEEE 1547, UL 1741, CA Rule-21, HI Rule14) exist for PECS used for renewable energy systems such as battery storage and solar PVs. However, those that consider the dynamic behavior of HTSEs and that can be used for large-scale H2 systems are yet to be developed. This paper investigates the performance of these PECS for the HTSE application that are set up at the Idaho National Laboratory for hydrogen production testing, research and development. In particular, the performance analysis of two grid-tied PECS (A and B) is conducted for a 100 kW solid oxide HTSE system. System A consists of 6 units of 30kW MOSFET-switched bidirectional AC-DC rectifier while system B has a single unit of 150kW thyristor-switched AC-DC rectifier. Both systems are connected to the HTSE stacks via a DC-DC converter. Different operational conditions of the HTSE system are tested to analyze the dynamic response of the HTSE’s PECS. The experimental results show the need to develop advanced control strategies for PECS that incorporates the dynamics of HTSE systems for improved performance.

High temperature steam electrolysis↗
DOE OSTI2023

Plasmon-enhanced optical nonlinearity in graphene nanomeshes

Using the density-matrix formalism, here we show that graphene nanomeshes (GNMs)—graphene sheets patterned with antidots—have large plasmon-enhanced nonlinear optical response. GNMs can be designed to behave as quasi-one-dimensional plasmonic crystals in which plasmons with large propagation lengths are efficiently excited. The associated third-order Kerr and third-harmonic-generation susceptibility can be as high as 10 –7 and 10 –9 m 2 V –2 , respectively, over the mid-to-near-infrared frequency range. Furthermore, carrier-density tuning in GNMs can flip the propagation direction of plasmonic waves and enables bidirectional switching of optical signals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Solid state protective smart plug device

A wireless-controlled smart plug device and methods of use and operation, using a solid state switch to provide electrical power from an outlet to a load, and provide protection against overload, short circuit, ground, arc, or voltage surge faults. The switch includes a bidirectional semiconductor switch with two back-to-back connected transistors, such as silicon power MOSFETs, silicon insulated-gate bipolar transistors (IGBTs), silicon carbide (SiC) transistors, or gallium nitride (GaN) transistors, each configured to control the current flow from the electrical receptacle to the external electrical load.

Shen, Zheng↗
DOE OSTI2024

FET Junction Temperature Monitoring Using Novel On-Chip Solution

A novel junction temperature monitoring sensor is proposed and experimentally demonstrated for application in MOS-gate power devices. The sensor is created using the polycide gate electrode layer of the devices to create a temperature-sensitive resistor without any additional fabrication steps. The resistor is located on the field oxide with one end grounded at the device reference terminal to isolate it from the device current and voltage transients. It allows in-situ monitoring of the device junction temperature during active circuit operation. The technology has been implemented to monitor the junction temperature of Silicon Carbide Junction Barrier Schottky Field Effect Transistors (SiC JBSFETs) with the bi-directional FET (BiDFET).

Bidirectional switches, SiC bidirectional FET, BiD↗
DOE OSTI2023

Indefinite and bidirectional near-infrared nanocrystal photoswitching

Materials whose luminescence can be switched by optical stimulation drive technologies ranging from superresolution imaging, nanophotonics, and optical data storage, to targeted pharmacology, optogenetics, and chemical reactivity. Furthermore, these photoswitchable probes, including organic fluorophores and proteins, can be prone to photodegradation and often operate in the ultraviolet or visible spectral regions. Colloidal inorganic nanoparticles can offer improved stability, but the ability to switch emission bidirectionally, particularly with near-infrared (NIR) light, has not, to our knowledge, been reported in such systems. Here, we present two-way, NIR photoswitching of avalanching nanoparticles (ANPs), showing full optical control of upconverted emission using phototriggers in the NIR-I and NIR-II spectral regions useful for subsurface imaging. Employing single-step photodarkening and photobrightening, we demonstrate indefinite photoswitching of individual nanoparticles (more than 1,000 cycles over 7 h) in ambient or aqueous conditions without measurable photodegradation. Critical steps of the photoswitching mechanism are elucidated by modelling and by measuring the photon avalanche properties of single ANPs in both bright and dark states. Unlimited, reversible photoswitching of ANPs enables indefinitely rewritable two-dimensional and three-dimensional multilevel optical patterning of ANPs, as well as optical nanoscopy with sub-Å localization superresolution that allows us to distinguish individual ANPs within tightly packed clusters.

36 MATERIALS SCIENCE↗
DOE OSTI2023

The BiDFET Device and Its Impact on Converters

The matrix converter topology for direct ac-to-ac conversion offers elimination of the bulky and unreliable D.C. link capacitors used in the popular Voltage-Source Inverter (VSI) with a front-end rectifier. The resulting more compact and higher efficiency implementation is a desirable solution for a wide variety of applications, such as photovoltaic energy generation, motor drives, and energy storage systems. The development of matrix converters has been hampered by the lack of availability of commercial bidirectional power switches with the ability to block high voltages in the first and third quadrants, carry on state current in both quadrants with low voltage drop, exhibit large forward-biased safe-operating-area (FBSOA), and low switching power losses. Consequently, many implementations have been tried in the past using discrete devices, as listed in Table I. Two implementations utilize commonly available asymmetric blocking IGBTs, while two cases make use of SiC power MOSFETs. They generally have a large parts count (4-6 individual switches) that occupies significant space in the converter where multiple bi-directional switches are required. They also have a high on-state voltage drop that degrades efficiency. As a result, one implementation utilizes symmetric blocking IGBT to achieve a low parts count (2), but its switching losses are unacceptably high.

42 ENGINEERING↗
DOE OSTI2023

PV Inverter Systems Enabled by Monolithically Integrated SiC based Four Quadrant Power Switch (4-QPS) [BiDFET]

The purpose of this project was to develop a new breed of Power Conversion Systems (PCS) for PV integration that is enabled by the newly developed 4-Quadrant Single Die SiC Power Semiconductor Switches (4-QPS) or also referred to as “Bidirectional FET (BIDFET)”. This work includes semiconductor die development, advanced packaging, converter design, development, and testing of 4-QPS enabled hardware prototypes at 1 kW (for single phase residential application) and 10 kW (for three phase commercial application). The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

A Cost-Effective Wave Energy Harvesting System with Maximum Power Point Tracking Capability

In this paper, we propose a low-cost bidirectional four-switch inverter that transfers three-phase energy between a permanent magnet synchronous generator (PMSG) driven by a wave energy collector and the power grid or a local ac load. To achieve high control performance, the machine-side inverter uses a high-gain observer for rotor position estimation and a Lyapunov-based approach for torque control. For the gridside inverter control, we estimate the filter capacitor voltage with a model reference adaptive system and control the dc-link voltage with a Lyapunov-based energy function. We also track the maximum power point from the sea waves with an integral control law that actively matches the generator impedance with that of the wave collection device. The proposed system supports both grid-following/forming modes. We validate our control design with simulation results on a 3-kW hardware setup.

wave energy, power systems integration, control de↗
DOE OSTI2023

Power Conversion Systems Enabled by SiC BiDFET Device

The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. Furthermore, the matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac-ac and ac dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

42 ENGINEERING↗
DOE OSTI2023

Design, Optimization, and Validation of GaN-Based DAB Converter for Active Cell Balancing in BTMS Applications: Preprint

This paper focuses on the design of a bidirectional dual active bridge (DAB) DC/DC converter that utilizes Gallium Nitride (GaN) switches as active components. In the existing literature, MOSFET-based DAB for active cell balancing is available, but GaN-based DAB converter for active cell balancing is still new. The proposed modular isolated GaN-based DAB converter is designed as an individual module of active cell balancing for behind-the-meter storage (BTMS) applications, targeting high-power charging stations. Modular isolated converters are connected to each cell (low voltage bus), and each cell is connected in series to build up a battery module. According to the reference current command of supervisory control, each DAB converter can transfer power back and forth through the high voltage (HV) bus to balance the State of Charge (SoC) between the cells. Each module DAB converter is designed at a 50W power rating. Switch power and transformer losses are analyzed for different switching frequencies, showing the optimum switching frequency for minimum losses. Furthermore, the procedure to select the required gate driver and the PCB layout optimization are discussed. Finally, the DAB performance analysis of GaNbased DAB and Si-based DAB is provided for a battery module operating with a LiFeMnPO4 prismatic cell with 3.2V 20Ah rated values.

active cell balancing↗
DOE OSTI2023

Design, Optimization, and Validation of GaN-Based DAB Converter for Active Cell Balancing in BTMS Applications

This paper focuses on the design of a bidirectional dual active bridge (DAB) DC/DC converter that utilizes Gallium Nitride (GaN) switches as active components. In the existing literature, MOSFET-based DAB for active cell balancing is available, but GaN-based DAB converter for active cell balancing is still new. The proposed modular isolated GaN-based DAB converter is designed as an individual module of active cell balancing for behind-the-meter storage (BTMS) applications, targeting high-power charging stations. Modular isolated converters are connected to each cell (low voltage bus), and each cell is connected in series to build up a battery module. According to the reference current command of supervisory control, each DAB converter can transfer power back and forth through the high voltage (HV) bus to balance the State of Charge (SoC) between the cells. Each module DAB converter is designed at a 50 W power rating. Switch power and transformer losses are analyzed for different switching frequencies, showing the optimum switching frequency for minimum losses. Furthermore, the procedure to select the required gate driver and the PCB layout optimization are discussed. Finally, the DAB performance analysis of GaN-based DAB and Si-based DAB is provided for a battery module operating with a LiFeMnPO4 prismatic cell with 3.2V 20Ah rated values.

active cell balancing↗