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C-MOS array design techniques

The entire complement of standard cells and components, except for the set-reset flip-flop, was completed. Two levels of checking were performed on each device. Logic cells and topological layout are described. All the related computer programs were coded and one level of debugging was completed. The logic for the test chip was modified and updated. This test chip served as the first test vehicle to exercise the standard cell complementary MOS(C-MOS) automatic artwork generation capability.

Feller, A.↗

C-MOS array design techniques: SUMC multiprocessor system study

The current capabilities of LSI techniques for speed and reliability, plus the possibilities of assembling large configurations of LSI logic and storage elements, have demanded the study of multiprocessors and multiprocessing techniques, problems, and potentialities. Evaluated are three previous systems studies for a space ultrareliable modular computer multiprocessing system, and a new multiprocessing system is proposed that is flexibly configured with up to four central processors, four 1/0 processors, and 16 main memory units, plus auxiliary memory and peripheral devices. This multiprocessor system features a multilevel interrupt, qualified S/360 compatibility for ground-based generation of programs, virtual memory management of a storage hierarchy through 1/0 processors, and multiport access to multiple and shared memory units.

Clapp, W. A.↗

C-MOS bulk metal design handbook

The LSI standard cell array technique was used in the fabrication of more than 20 CMOS custom arrays. This technique consists of a series of computer programs and design automation techniques referred to as the Computer Aided Design And Test (CADAT) system that automatically translate a partitioned logic diagram into a set of instructions for driving an automatic plotter which generates precision mask artwork for complex LSI arrays of CMOS standard cells. The standard cell concept for producing LSI arrays begins with the design, layout, and validation of a group of custom circuits called standard cells. Once validated, these cells are given identification or pattern numbers and are permanently stored. To use one of these cells in a logic design, the user calls for the desired cell by pattern number. The Place, Route in Two Dimension (PR2D) computer program is then used to automatically generate the metalization and/or tunnels to interconnect the standard cells into the required function. Data sheets that describe the function, artwork, and performance of each of the standard cells, the general procedure for implementation of logic in CMOS standard cells, and additional detailed design information are presented.

Edge, T. M.↗

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The CMOS Radiation Effects Measurement (CREM) experiment is presently being flown on the Explorer-55. The purpose of the experiment is to evaluate device performance in the actual space radiation environment and to correlate the respective measurements to on-the-ground laboratory irradiation results. The experiment contains an assembly of C-MOS and P-MOS devices shielded in front by flat slabs of aluminum and by a practically infinite shield in the back. Predictions of radiation damage to C-MOS devices are based on standard environment models and computational techniques. A comparison of the shifts in CMOS threshold potentials, that is, those measured in space to those obtained from the on-the-ground simulation experiment with Co-60, indicates that the measured space damage is smaller than predicted by about a factor of 2-3 for thin shields, but agrees well with predictions for thicker shields.

Cliff, R. A.↗

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The initial results obtained from the Complementary Metal Oxide Semiconductors Radiation Effects Measurement experiment are presented. Predictions of radiation damage to C-MOS devices are based on standard environment models and computational techniques. A comparison of the shifts in CMOS threshold potentials, that is, those measured in space to those obtained from the on the ground simulation experiment with Co 60, indicated that the measured space damage is greater than predicted by a factor of two for shields thicker than 100 mils (2.54 mm), but agrees well with predictions for the thinner shields.

Cliff, R. A.↗

The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.

Bouldin, D. L.↗

Phase partitioning, crystal growth, electrodeposition and cosmic ray experiments in microgravity

Five experiments are contained in one Get Away Special Canister (5 cu ft). The first utilizes microgravity to separate biological cells and to study the mechanism of phase partitioning in 12 separate cuvettes. Two experiments are designed to grow organic crystals by physical vapor transport. One experiment consists of eight electroplating cells with various chemicals to produce surfaces electroplated in microgravity. Some of the surfaces have micron sized particles of hard materials co-deposited during electrodeposition. The fifth experiment intercepts cosmic ray particles and records their paths on photographic emulsions. The first four experiments are controlled by an on-board C-MOS controller. The fifth experiment is totally passive. These are the first in Space. Their purpose is to create new commercial products with microgravity processing.

Wessling, Francis C.↗

Ga:Ge array development

Work at the University of Arizona and at Lawrence Berkeley Laboratory on the development of a far infrared array camera for the Multiband Imaging Photometer on the Space Infrared Telescope Facility (SIRTF) is discussed. The camera design uses stacked linear arrays of Ge:Ga photoconductors to make a full two-dimensional array. Initial results from a 1 x 16 array using a thermally isolated J-FET readout are presented. Dark currents below 300 electrons s(exp -1) and readout noises of 60 electrons were attained. Operation of these types of detectors in an ionizing radiation environment are discussed. Results of radiation testing using both low energy gamma rays and protons are given. Work on advanced C-MOS cascode readouts that promise lower temperature operation and higher levels of performance than the current J-FET based devices is described.

Young, Erick T.↗

AE 152 cascode readout for far-IR focal plane arrays

The Amber Engineering AE 152 readout is a 32-channel multiplexer built as part of the FIR focal plane array development effort for the Space Infrared Telescope Facility (SIRTF). The design of the device addresses a number of constraints peculiar to the operation of germanium photoconductors. In particular, the need for a very high level of bias stability is solved by a nonswitched operation of the first stage. Additionally, the readout was optimized for the detector capacitance expected of large bulk photoconductors (about 0.7 pF) and for the slow operating speeds anticipated for this astronomical application. Fabricated in a 1.25-micron C-MOS process, the circuit utilizes a cascode input stage to provide gain at the front end while avoiding the Miller effect. The AE 152 also includes an internal offset correction and a shift register multiplexer for the output. We present test data for this device at a variety of temperatures, and show read noises as low as 8 electrons at a temperature of 77 K.

Young, Erick T.↗