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DOE OSTI2024

Jamming Detection for Low-Resolution SC-FDE Systems: A Machine Learning Approach

Jammers interfere with communication between base stations (BSs) and legitimate users, leading to degradation of wireless system performance. Our study focuses on jamming detection for wideband single-carrier frequency domain equalization (SC-FDE) systems with low-resolution analog-to digital converters (ADCs). In such systems, jamming detection is challenging because traditional analytical approaches cannot be directly applied due to the delay dispersion in wideband channels and the non-linearity induced by low-resolution ADCs. We propose a machine learning (ML)-based jamming detection method that directly uses the quantized receive signals. Significantly, our ML-based detector can be integrated into existing standard frameworks, such as unique word (UW)-based SC-FDE systems, as it uses existing pilots without requiring additional pilots for jamming detection. Through numerical simulations, we show that two or more bits provide satisfactory performance compared to unquantized scenarios. Additionally, we demonstrate that using more and well-separated pilot symbols improves performance.

99 GENERAL AND MISCELLANEOUS↗

DOE OSTI2026

Nanoscale Compositional and Strain Gradients Enable High‐Speed and Amplitude‐Resolved Pyroelectric Sensing

The frequency response of pyroelectric sensors is fundamentally governed by thermal time constant (τth, determined by thermal mass and thermal conductance) and electrical impedance arising from film capacitance and readout circuit. Conventional bulk LiTaO3 detectors are optimized for high responsivity at low modulation frequencies (0.1-10 Hz), possessing a large τth that thermally averages rapid temperature oscillations at elevated modulation frequencies, limiting fidelity in resolving dynamic varying thermal signals. Here, compositional and strain gradients are introduced into 100-nm-thick relaxor-ferroelectric films reducing τth to ≈2 µs and producing built-in potentials (≈1.45 V or 145 kV cm-1) that enhance the pyroelectric coefficient and suppress the dielectric constant. This enables complementary dual-mode operation by enhancing current-mode electrical responsivity and improving the voltage-mode figure of merit - advantageous for superior temperature resolution (ΔTmin ≈ 30 µK). The responsivity peak shifts to near 1 kHz (>2500-times higher than conventional bulk sensors), with measurable responsivity extending to a carrier frequency of 100 kHz and amplitude-resolved detection at modulation frequencies up to 15 kHz. These results establish nanoscale internal-field engineering can reshape electro-thermal trade-off in pyroelectric thin films toward zero-bias, high-thermal-sensitivity, and amplitude-resolved thermal sensing across a wide frequency bandwidth.

Lin, Ching‐Che↗

DOE OSTI2025

Hearing carrier-envelope offset frequency and phase in air with a microphone

Attosecond science and frequency metrology rely on the precise measurement and control of the laser pulse waveform, a feat traditionally achieved using optoelectronic techniques. In this study, we conducted a laser-induced acoustic experiment in air ionized by carrier-envelope phase (CEP)-stabilized sub-4 fs pulses. Our results reveal that the acoustic signal exhibits CEP dependence in few-cycle pulses, primarily through amplitude modulation from laser-driven ionization. This optoacoustic phenomenon is, to the best of our knowledge, a novel phenomenon that enables not only the measurement of the carrier-envelope offset frequency but also the direct characterization of the waveform of optical pulses through a microphone. Our study highlights the potential of laser-induced acoustic waves for advancing ultrafast science.

Han, Meng [Kansas State University, Manhattan, KS ↗

DOE OSTI2024

Understanding the Phase of Responsivity and Noise Sources in Frequency-Domain Multiplexed Readout of Transition Edge Sensor Bolometers

Abstract Cosmic microwave background (CMB) experiments have deployed focal planes with $$\mathcal {O}(10^{4})$$ O ( 10 4 ) transition edge sensor (TES) bolometers cooled to sub-Kelvin temperatures by multiplexing the readout of many TES channels onto a single pair of wires. Digital Frequency-domain Multiplexing (DfMux) is a multiplexing technique used in many CMB polarization experiments, such as the Simons Array, SPT-3 G, and EBEX. The DfMux system studied here uses LC filters with resonant frequencies ranging from 1.5 to 4.5 MHz connected to an array of TESs. Each detector has an amplitude-modulated carrier tone at the resonant frequency of its accompanying LC resonator. The signal is recovered via quadrature demodulation where the in-phase (I) component of the demodulated current is in phase with the complex admittance of the circuit and the quadrature (Q) component is orthogonal to I. Observed excess current noise in the Q component is consistent with fluctuations in the resonant frequency. This noise has been shown to be non-orthogonal to the phase of the detector’s responsivity. We present a detailed analysis of the phase of responsivity of the TES and noise sources in our DfMux readout system. Further, we investigate how modifications to the TES operating resistance and bias frequency can affect the phase of noise relative to the phase of the detector responsivity, using data from Simons Array to evaluate our predictions. We find that both the phase of responsivity and phase of noise are functions of the two tuning parameters, which can be purposefully selected to maximize signal-to-noise (SNR) ratio.

47 OTHER INSTRUMENTATION↗

DOE OSTI2025

Current interrupt method for calculating the electrochemical impedance in a solid oxide electrolysis stack

Here, in this work the time domain response of Solid Oxide Electrolysis Cells (SOEC) to a current interruption was transformed into the frequency domain using a carrier function Laplace transform, which is fit to the experimental data using a MATLAB Complex Nonlinear Least Squares (CNLS) solver. The hardware implementation, consisting principally of a high-speed switch and a fast-logging Analog to Digital Converter (ADC), was assembled and tested using a calibration module to assess the accuracy, repeatability, and speed of acquisition of the prototype device as compared against a calibrated commercial impedance spectrometer. Additionally, the current interrupt device and commercial FRA were used to acquire the impedance spectra of a four cell SOEC stack with a large, 300 cm 2 , active cell area.

SOEC↗

DOE OSTI2026

Cryogenic-Refined MOSFET Modeling for Oscillator, Frequency Divider, and Amplifier Designs Below 4 K

Capturing device characteristic changes at cryogenic temperatures is crucial for cryo-CMOS circuit designs. In this work, we present an isothermal cryogenic-refined modeling approach for CMOS transistors that is simple, low overhead, and easy to implement while offering the required accuracy for predicting circuit performance at the designated temperatures. Guided by die-level measurement data and circuit design principles, the model introduces corrections to only five critical parameters: threshold voltage, carrier mobility, elevated low-frequency flicker noise, dominant high-frequency shot noise, and subthreshold swing (SS). These refinements are implemented around the foundry-provided SPICE model, which is typically validated only down to about 200 K. With these adjustments, the proposed cryogenic-refined model achieves less than 5% error in both large-signal metrics (I–V characteristics) and small-signal parameters (e.g., transconductance) when compared with device measurements at deep-cryogenic temperatures. The methodology is validated in two advanced technologies: TSMC 40-nm CMOS and GlobalFoundries (GF) 45-nm RF-SOI. We further demonstrate its applicability in three representative RF circuits: a 30-GHz LC oscillator, a high-speed current-mode-logic (CML) frequency divider (FD), and a subthreshold Gb/s amplifier, all showing close agreement between simulated predictions and measurements performed at 4 and 2.5 K. Finally, we believe that the proposed approach is implementation-friendly and can significantly accelerate the development of cryo-CMOS integrated circuits.

circuit modeling↗

DOE OSTI2026

Ultrafast carrier dynamics in multiple quantum well p–i–n photodiodes

Quantum well (QW) structures are widely used in lasers, semiconductor optical amplifiers, and modulators, enabling their monolithic integration on the same substrate. As optoelectronic systems evolve to meet the growing bandwidth demands in the terahertz regime, a deep understanding of ultrafast carrier dynamics in QW structures becomes essential. We introduce a comprehensive model to analyze the ultrafast dynamics of interband photo-excited carriers in QW p–i–n structures and to calculate their frequency response. This model characterizes the entire photocarrier transport process, including carrier escape from QWs and movement across heterojunction interfaces. Additionally, we outline theoretical methods for calculating carrier escape times from both QWs and heterojunction interfaces. Using a GaAs/AlGaAs QW p–i–n structure as a case study, we discuss the effects of carrier escape times from QWs and heterojunction interfaces, as well as carrier transit time through the intrinsic region, on the frequency response of QW p–i–n structures.

Electronic band structure↗

DOE OSTI2024

Free-Charge Carrier Generation in Homojunction Non-Polymeric Organic Semiconductor Films - The Role of the Optical Frequency Dielectric Constant

Engineering the dielectric constant (..epsilon..) to lower the exciton binding energy of the light-absorbing semiconductor can improve organic photovoltaic (OPV) device performance. Here, a series of materials are reported with 2-(3-oxo-2,3-dihydro-1H-inden-1-ylidene)malononitrile (INCN) acceptor end groups and a central glycolated bis(4H-cyclopenta[2,1-b:3,4-b']dithiophene) unit with large low-frequency (..epsilon..lf = 7.4-7.9 at 0.1-0.2 MHz) and optical-frequency (..epsilon..opt up to 6.6 at 2 x 1014 Hz) dielectric constants. The INCN end groups differed in whether they were protonated, chlorinated, or fluorinated, with the latter having the highest ..epsilon..opt. An ..epsilon..opt of 6.6 is predicted to lead to a low exciton binding energy of ~0.04 eV. Time-resolved microwave conductivity measurements showed a temperature-dependent yield-mobility product, with it increasing linearly from 340 K. The onset temperature was near that required to overcome the calculated exciton binding energy and indicates increased free charge generation in a homojunction film. Room temperature transient absorption spectroscopy revealed that photoexcitation rapidly converted to a lower energy state that was consistent with the formation of polarons or a charge transfer state. This work provides experimental evidence of the importance of ..epsilon..opt for the generation of free charges, and a strategy for development of efficient single chromophore homojunction OPV devices.

charge generation↗

DOE OSTI2025

Ultrabroadband THz conductivity of gated graphene in- and out-of-equilibrium

We employ ultrabroadband terahertz (THz) spectroscopy to expose the high-frequency transport properties of Dirac fermions in monolayer graphene. By controlling the carrier concentration via tunable electrical gating, both equilibrium and transient optical conductivities are obtained for a range of Fermi levels. The frequency-dependent equilibrium response is determined through a combination of time-domain THz and Fourier-transform infrared spectroscopy for energies up to the near-infrared, which also provides a measure of the gate-voltage dependent Fermi level. Transient changes in the real and imaginary parts of the graphene conductivity are electro-optically resolved for frequencies up to 15 THz after near-infrared femtosecond excitation, both at the charge-neutral point and for higher electrostatic-doping levels. Modeling of the THz response provides insight into changes of the carrier spectral weights and scattering rates, and reveals an additional broad-frequency ($$\approx$$ 8 THz) component to the photo-induced response, which we attribute to the zero-momentum mode of quantum-critical transport observed here in large-area CVD graphene.

Coslovich, G↗

DOE OSTI2026

Plasmon-Induced Resonance Energy Transfer in Hybrid Nanomaterials

Plasmon-induced resonance energy transfer (PIRET) has emerged as a powerful mechanism for harnessing and redirecting plasmon energy before it dissipates into hot carriers or heat. By matching plasmon resonance frequencies with acceptor absorption bands, PIRET extends plasmon-driven processes beyond the charge transfer pathway, enabling selective energy flow into excitonic transitions. Here, this review highlights important progress in elucidating the fundamental plasmon decay processes and transitioning them into hybrid nanomaterials under PIRET. Employing specialized single-particle spectroscopic techniques based on scattering, extinction, and emission enables demonstration of PIRET in the face of competing mechanisms, such as interfacial charge transfer and thermalization. Finally, we complete this review by addressing strategies for active modulation of PIRET and present applications, ranging from plasmon photocatalysis to intracellular biochemical sensing.

Energy transfer↗

DOE OSTI2024

Petahertz electronics

Petahertz, or lightwave, electronics uses tailored optical waveforms to control charge carriers in an electronic circuit at petahertz frequencies. This may enable faster processing than conventional pulsed electronics, which cannot be scaled beyond gigahertz frequencies. In recent years, petahertz-scale currents driven by optical fields have been measured in solid-state systems and nanoscale structures, with several proof-of-principle demonstrations of sub-optical-cycle current generation and optical-field-resolved waveform detection at the sub-femtosecond to few-femtosecond scale. Recent work has taken the first steps towards digital and quantum operation by exploring optical-field-driven logic and memory functionality. Here, in this Review, we discuss the progress towards sub-cycle field-driven current injection, highlighting key theoretical concepts, experimental milestones, and questions remaining as we push towards realizing petahertz electronics for ultrafast optical waveform analysis, digital logic, communications, and quantum computation.

Heide, Christian↗

DOE OSTI2025

Wide‐Field Bond Quality Evaluation Using Frequency Domain Thermoreflectance with Deep Neural Network Feature Reconstruction

Heterogeneous integration of microelectronic components provides a pathway to improve circuit/component performance; however, this comes with assembly challenges, in particular due to complex interfaces via subsurface bump bonds. The ability of these bonds to transmit electrical signals and conduct heat to the carrier substrate limits component performance. In this work, hyperspectral frequency‐domain thermoreflectance (FDTR) imaging is demonstrated as a robust technique for evaluating the quality of subsurface indium bump bonds in a surrogate microelectronic sample. By performing microscale FDTR imaging with coarse motion image stitching, thermal phase maps that cover a 4 mm by 4 mm field‐of‐view with subsurface feature sensitivity at depths greater than 50 µm are obtained. The resulting FDTR hyperspectral data contains more than three million pixels and reveal the quality of subsurface microbump arrays. Wide‐field analysis of bonded versus gap regions is enabled by deep neural network feature reconstruction, that after training, rapidly provides an interpretable representation of bond quality. Utility of noisy higher frequency FDTR phase maps, i.e., near the computationally predicted sensing depth limit, results in an average prediction error of 11%. Taken together, FDTR with neural network‐based analysis demonstrates subsurface bond monitoring at length scales relevant for heterogeneously integrated microelectronics.

FDTR↗

DOE OSTI2025

Terahertz conductivity of two-dimensional materials: a review

Two-dimensional (2D) van der Waals materials are shaping the landscape of next-generation devices, offering significant technological value thanks to their unique, tunable, and layer-dependent electronic and optoelectronic properties. Time-domain spectroscopic techniques at terahertz (THz) frequencies offer noninvasive, contact-free methods for characterizing the dynamics of carriers in 2D materials. They also pave the path toward the applications of 2D materials in detection, imaging, manufacturing, and communication within the increasingly important THz frequency range. In this paper, we overview the synthesis of 2D materials and the prominent THz spectroscopy techniques: THz time-domain spectroscopy, optical-pump THz-probe technique, and optical pump–probe THz spectroscopy. Through a confluence of experimental findings, numerical simulation, and theoretical analysis, we present the current understanding of the rich ultrafast physics of technologically significant 2D materials: graphene, transition metal dichalcogenides, MXenes, perovskites, topological 2D materials, and 2D heterostructures. Finally, we offer a perspective on the role of THz characterization in guiding future research and in the quest for ideal 2D materials for new applications.

2D materials↗

DOE OSTI2024

High-performance silicon photonic single-sideband modulators for cold-atom interferometry

The laser system is the most complex component of a light-pulse atom interferometer (LPAI), controlling frequencies and intensities of multiple laser beams to configure quantum gravity and inertial sensors. Its main functions include cold-atom generation, state preparation, state-selective detection, and generating a coherent two-photon process for the light-pulse sequence. To achieve substantial miniaturization and ruggedization, we integrate key laser system functions onto a photonic integrated circuit. Our study focuses on a high-performance silicon photonic suppressed-carrier single-sideband (SC-SSB) modulator at 1560 nanometers, capable of dynamic frequency shifting within the LPAI. By independently controlling radio frequency (RF) channels, we achieve 30-decibel carrier suppression and unprecedented 47.8-decibel sideband suppression at peak conversion efficiency of –6.846 decibels (20.7%). We investigate imbalances in both amplitudes and phases between the RF signals. Using this modulator, we demonstrate cold-atom generation, state-selective detection, and atom interferometer fringes to estimate gravitational acceleration, g ≈ 9.77 ± 0.01 meters per second squared, in a rubidium ( 87 Rb) atom system.

47 OTHER INSTRUMENTATION↗

DOE OSTI2025

Extreme Enhancement-Mode Operation Accumulation Channel Hydrogen-Terminated Diamond FETs with V th < -6 V and High on-Current

In this work, a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) is demonstrated that operates in an Accumulation Channel rather than a Transfer Doping regime. The FET devices demonstrate both extreme enhancement-mode operation and high on-current with improved channel charge mobility compared to Transfer-Doped equivalents. Electron-beam evaporated Al 2 O 3 is used on H-diamond to suppress the Transfer Doping mechanism and produce an extremely high ungated channel resistance. A high-quality H-diamond surface with an unpinned Fermi level is crucially achieved, allowing for the formation of a high-density hole accumulation layer by gating the entire device channel which is encapsulated in dual-stacks of Al 2 O 3 . Completed devices with gate/channel length of 1 µm demonstrate record threshold voltage < -6 V with on-current > 80 mA mm -1 . Carrier density and mobility figures extracted by CV analysis indicate a high 2D charge density of ≈ 2 × 10 12 cm -2 and increased hole mobility of 110 cm 2 V -1 s -1 in comparison with more traditional Transfer-Doped H-diamond FETs. These results demonstrate the most negative threshold voltage yet reported for H-diamond FETs and highlight a powerful new strategy to greatly improve carrier mobility and enable enhanced high power and high frequency diamond transistor performance.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2026

Experimental Evidence of Free Carrier Generation in 2D Hybrid Organic–Inorganic Perovskites

Despite the significant potential of 2D hybrid organic–inorganic perovskites (2DHOIPs) for high-efficiency optoelectronics application-comparable to their 3D counterparts, the fundamental carrier photogeneration remains unclear. In contrast to conventional ultrafast optical property characterization, we use ultrafast photocurrent spectroscopy to investigate the early-time electrical properties of type-I and type-II 2DHOIPs by manipulating the quantum confinement and the dielectric quantum matching effect. We discovered that the high frequency dielectric quantum matching effect plays a major role in 2DHOIPs, demonstrated by their high carrier mobility (µ), near-unity photogeneration quantum yield (Φ), below-room temperature exciton binding energy (E b ), and approaching 3D space factor (DSF). Our work shows that the optoelectronic performances of 2DHOIPs are comparable to their counterparts of 3DHOIPs.

2D perovskite↗

DOE OSTI2025

Two-frequency RF fields induced multipactor in coaxial transmission lines

This study presents a comprehensive investigation of two-surface multipactor discharge in coaxial transmission lines under two-frequency radio frequency (RF) excitation using one-dimensional Monte Carlo simulations validated against three-dimensional particle-in-cell simulations and experimental data. The results show that introducing a second carrier mode can suppress multipactor by reshaping and shrinking the susceptibility region, with the extent and location of suppression strongly dependent on the device's aspect ratio and the relative phase of the second carrier mode. Distinct suppression patterns are observed across different fd regimes, while in some cases, susceptibility expansion also occurs under two-frequency operation. A key outcome is the identification and delineation of pure and mixed multipactor modes in coaxial geometry, where analytical mode boundaries are not readily available. Unlike planar geometries, pure-mode regions in coaxial systems overlap with mixed-mode domains, complicating mode identification. Additionally, image charge forces are found to have negligible influence on susceptibility thresholds but strongly affect electron growth rates. These findings offer valuable insights into the use of waveform engineering for controlling multipactor in high-power RF systems.

43 PARTICLE ACCELERATORS↗

DOE OSTI2025

Carrier-Envelope Phase Control in Terahertz Pulse Generation Using InAs Ribbon Metasurfaces

Generation of broadband terahertz (THz) pulses with variable polarization and carrier-envelope phase can enable the tailoring of THz beam wavefronts for advanced applications in THz imaging and spectroscopy and for strong THz field optics. While metasurfaces composed of deeply subwavelength THz emitters have recently been demonstrated to define the polarization and spatial profile of the generated THz fields, precise phase control or synthesis of THz pulse waveforms remains a challenging problem. Here, we propose and demonstrate metasurfaces composed of indium arsenide (InAs) nanoscale ribbon arrays capable of generating THz pulses with variable carrier-envelope phase. We show that different THz generation mechanisms, each contributing distinct phases, can be activated in the ribbons, enabling carrier-envelope phase control spanning a range of π over a wide band of frequencies (∼1–3 THz). This is achieved solely through the ribbon array geometry using linearly polarized optical excitation of the ribbons. The arrays enable precise control of the THz phase and amplitude, opening the door to advanced structured THz wavefront synthesis using ultrathin dielectric metasurfaces.

carrier-envelope phase↗