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Results for “Chromium doping”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Effective gain measurements in chromium-doped forsterite

Effective gain cross section in tetravalent chromium-doped forsterite laser crystal was measured over the 1180-1330 nm spectral range. The experiment was performed using two collinear laser beams in a pump-and-probe arrangement. The peak-gain cross section from this measurement is estimated to be 1.9 x 10 to the -19th sq cm at 1215 nm, which is comparable to the value of about 2 x 10 to the -19th sq cm predicted by fluorescence linewidth and lifetime measurements. These results indicate that excited-state absorption is not a major loss mechanism in tetravalent chromium-doped forsterite.

Petricevic, V.↗
NASA NTRS1993

Femtosecond pulses generated from a synchronously pumped chromium-doped forsterite laser

Kerr lens mode-locking (KLM) has become a standard method to produce femtosecond pulses from tunable solid state lasers. High power inside the laser resonator propagating through the laser-medium with nonlinear index of refraction, coupled with the stability conditions of the laser modes in the resonator, result in a passive amplitude modulation which explains the mechanism for pulse shortening. Recently, chromium doped forsterite was shown to exhibit similar pulse behavior. A successful attempt to generate femtosecond pulses from a synchronously pumped chromium-doped forsterite laser with intracavity dispersion compensation is reported. Stable, transform limited pulses with duration of 105 fs were routinely generated, tunable between 1240 to 1270 nm.

Seas, A.↗
NASA NTRS1992

Generation of sub-100-fs pulses from a CW mode-locked chromium-doped forsterite laser

Generation of femtosecond pulses from a continuous-wave mode-locked chromium-doped forsterite laser is reported. The forsterite laser was actively mode locked by using an acoustooptic modulator operating at 78 MHz with two Brewster high-dispersion glass prisms for intracavity chirp compensation. Transform-limited sub-100-fs pulses were routinely generated in the TEM(00) mode with 85 mW of continuous power (with 1 percent output coupler), tunable over 1230-1280 nm. The shortest pulses measured had a 60-fs pulse width.

Seas, A.↗
NASA NTRS2000

The Preparation Conditions of Chromium Doped ZnSe and Their Effect on the Infrared Luminescence Properties

We report the investigation by photoluminescence lifetime measurements of the near-IR emissions from a series of chromium-doped ZnSe samples, correlated to their preparation conditions. The samples were polycrystalline or single crystals prepared by post growth diffusion doping or single crystals doped during growth by the physical vapor transport method. Room temperature lifetime values between 6 and 8 micro seconds were measured for samples with Cr2+ from low 10(exp 17) to high 10(exp 18) / cubic cm range. Lifetime data taken down to 78 K was found to be rather temperature independent, reconfirming previous reports indicating a quantum yield of the corresponding emission of close to 100% at room temperature. A strong decrease in the room temperature lifetime was found for chromium concentrations higher than 10(exp 19) / cubic CM.

Burger, A.↗
NASA NTRS2000

The Preparation Conditions of Chromium Doped ZnSe and Their Effect on The Infrared Luminescence Properties

We report the investigation by photoluminescence lifetime measurements of the near-IR emissions from a series of chromium-doped ZnSe samples, correlated to their preparation conditions. The samples were polycrystalline or single crystals prepared by post growth diffusion doping or single crystals doped during growth by the Physical Vapor Transport method. Room temperature lifetime values between 6 and 8 microseconds were measured for samples with Cr (2+) concentrations from low 10 (exp 17) to high 10 (exp 18) per cubic centimeter range. Lifetime data taken down to 78 K was found to be rather temperature independent, reconfirming previous reports indicating a quantum yield of the corresponding emission of close to 100% at room temperature. A strong decrease in the room temperature lifetime was found for chromium concentrations higher than 10 (exp 19) per cubic centimeter.

Burger, A.↗
NASA NTRS1993

Self-mode-locked chromium-doped forsterite laser generates 50-fs pulses

Stable transform-limited (delta nu-delta tau = 0.32) femtosecond pulses with a FWHM of 50 fs were generated from a self-mode-locked chromium-doped forsterite laser. The forsterite laser was synchronously pumped by a CW mode-locked Nd:YAG (82 MHz) laser that generated picosecond pulses (200-300 ps) and provided the starting mechanism for self-mode-locked operation. Maximum output power was 45 mW for 3.9 W of absorbed pumped power with the use of an output coupler with 1 percent transmission. The self-mode-locked forsterite laser was tuned from 1240 to 1270 nm.

Seas, A.↗
NASA NTRS1988

Laser action in chromium-doped forsterite

This paper reports on pulsed laser operation obtained in chromium-activated forsterite Cr(3+):Mg2SiO4 at room temperature. The spectrum of the free-running laser peaks at 1235 nm and a bandwidth of about 22 nm. The spectral range of the laser emission is expected to extend from 850 to 1300, provided the parasitic impurity absorption may be minimized by improved crystal growth techique.

Petricevic, V.↗
NASA NTRS2008

Tetravalent chromium doped laser materials and NIR tunable lasers

A method is described to improve and produce purer Cr.sup.4+-doped laser materials and lasers with reduced co-incorporation of chromium in any other valence states, such as Cr.sup.3+, Cr.sup.2+, Cr.sup.5+, and Cr.sup.6+. The method includes: 1) certain crystals of olivine structure with large cation (Ca) in octahedral sites such as Cr.sup.4+:Ca.sub.2GeO.sub.4, Cr.sup.4+:Ca.sub.2SiO.sub.4, Cr.sup.4+:Ca.sub.2Ge.sub.xSi.sub.1-xO.sub.4 (where 0<x<1), and/or 2) high-temperature solution growth techniques that enable the growth of the crystals below the temperature of polymorphic transitions by using low melting point solvent based on oxide, fluoride and/or chloride compounds. Purer Cr.sup.4+-doped laser materials are characterized by a relatively high concentration of Cr.sup.4+-lasing ion in crystalline host that makes these materials suitable for compact high power (thin disk/wedge) NIR laser applications.

Alfano, Robert R.↗
NASA NTRS1997

Chromium Diffusion Doping on ZnSe Crystals

Chromium doped zinc selenide crystal have recently been demonstrated to be a promising material for near-IR room temperature tunable lasers which have an emission range of 2-3 micrometers. In this study a new diffusion doping process has been developed for incorporation of Cr(+2) ion into ZnSe wafers. This process has been successfully performed under isothermal conditions, at temperatures above 800 C. Concentrations in excess of 10(exp 19) Cr(+2) ions/cu cm, an order of magnitude larger than previously reported in melt grown ZnSe material, have been obtained by diffusion doping, as estimated from optical absorption measurements. The diffusivity was estimated to be about 10(exp -8) sq cm/sec using a thin film diffusion model. Resistivity was derived from current-voltage measurements and in the range of 10(exp 13) and 10(exp 16) omega-cm. The emission spectra and temperature dependent lifetime data will also be presented and discussed.

Journigan, Troy D.↗
NASA NTRS2014

Temperature and Pressure Sensors Based on Spin-Allowed Broadband Luminescence of Doped Orthorhombic Perovskite Structures

Systems and methods that are capable of measuring pressure or temperature based on luminescence are discussed herein. These systems and methods are based on spin-allowed broadband luminescence of sensors with orthorhombic perovskite structures of rare earth aluminates doped with chromium or similar transition metals, such as chromium-doped gadolinium aluminate. Luminescence from these sensors can be measured to determine at least one of temperature or pressure, based on either the intense luminescence of these sensors, even at high temperatures, or low temperature techniques discussed herein.

Eldridge, Jeffrey I.↗
NASA NTRS1997

Cr(+2) Diffusion Doping in ZnSe

Chromium doped zinc selenides crystals have recently been demonstrated to be a promising material for near-IR room temperature tunable lasers which has an emission range of 2-3 pm. In this study, a new diffusion doping process has been developed for incorporation of Cr(+2) ion into ZnSe wafers. This process has been successfully performed under isothermal conditions, at temperatures above 800 degrees Celsius. Concentrations in excess of 10(exp 19) Cr(+2) ions/cu cm, an order of magnitude larger than previously reported in melt grown ZnSe material, have been obtained. The diffusivity was estimated to be about 10-* sq cm/sec using a classical diffusion model. Resistivity was derived from current-voltage measurements and in the 107-10(exp 16) Ohms-cm and increased as function of Cr concentration.

Journigan, Troy D.↗
NASA NTRS1992

Novel Cr(4+)-based tunable solid-state lasers

Spectroscopic and laser properties of chromium-doped forsterite (Cr:Mg2SiO4) are reviewed and future directions in development of other Cr(4+)-doped tunable solid-state lasers are discussed. The unique property of chromium-doped forsterite is that the lasing center was identified as tetravalent chromium (Cr(4+)) substituting for tetrahedrally coordinated Si(4+). Development of chromium-doped forsterite laser may stimulate the generation of a new class of tunable solid state lasers based on tetravalent chromium as a laser active ion for the near-IR eyesafe spectral range. The criteria for the development of new Cr(4+)-based tunable solid-state laser crystals are discussed. We also present current research efforts to identify potential low field host crystals, such as silicates, titanites, and germanates, that may be doped with Cr(4+) as an active ion. These new laser materials are expected to cover the wavelength region from 1 - 2 microns, which may be of great technological importance.

Petricevic, V.↗
NASA NTRS2024

Morphology and Luminescence Properties of Transition Metal Doped Zinc Selenide Crystals

Zinc selenide is an excellent matrix material to dope with rare-earth and transition metal to achieve mid-infrared luminescence to develop high power lasers. The luminescence, morphology and refractive index is significantly affected by the doping and defects generated due to size and valency of dopants, concentration, growth process and convection during the growth. The aim of the study is to investigate effect of point and line defects generated due to low doping of iron and chromium on the emission and morphology of the zinc selenide. Luminescence and morphological properties of large iron and chromium doped zinc selenide single crystals were studied to evaluate the effect of extremely low residual impurities and defects associated with the doping process. The emission properties following both short wavelength (i.e., ultraviolet; 350 – 370 nm) excitation and longer wavelength (i.e., near infrared; 850 – 870 nm) excitation were characterized. Luminescence emission bands were identified in both doped crystals. In addition to the primary emission bands, satellite peaks and intra-center transitions were also observed. Due to local population defects associated with the residual impurities (ppm to ppb) in the Fe-ZnSe and Cr-ZnSe crystals, peak emission wavelengths were observed to shift. Raman studies using 266 and 532 – nm excitation revealed different positions of longitudinal and transverse peaks for Fe-ZnSe and Cr-ZnSe crystals, associated with different levels of defects due to the different ion sizes. The emission bands were found to decrease in intensity due to recombination of residual impurity co-dopants and complex defects generated during growth and fabrication. Cryogenic temperature analyses revealed a very clean emission band due to freezing of some of the point and line defects. An emission band observed at 980 nm for both crystals at room temperature as well as cryogenic temperatures indicates a vibronic peak in ZnSe. The scanning electron microscopy (SEM) images of the local morphology support the conclusion that small crystallites in doped crystals are also present.

Zinc selenide↗
NASA NTRS1987

Ohmic contact formation in semi-insulating GaAs using shallow heavily doped p-type layers

The paper describes a simple, safe, and effective method for forming shallow zinc-doped p-type layers on chromium-doped semiinsulating GaAs, using an open-tube diffusion technique. The resulting peak dopant concentration for the 850-C diffusion was 10 to the 20th/cu cm. The contact resistance of ohmic contacts fabricated on these layers was found to be about 0.00005 ohm/sq cm. The variation of the contact resistance across the wafer reflected the variation of the doping concentration.

Bose, Amitava↗
NASA NTRS1972

The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide

The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.

Littlejohn, M. A.↗
NASA NTRS1988

Laser action in chromium-activated forsterite for near infrared excitation

This paper reports on laser action in chromium-doped forsterite (Cr:Mg2SiO4) for 1064-nm excitation of the crystal's double-hump absorption band spanning the 850-1200-nm wavelength range. The cavity arrangement used for obtaining laser action in Cr:Mg2SiO2 was similar to that described by Petricevic et al. (1988). The fundamental and second harmonic emissions from a Q-switched Nd:YAG laser operating at a 10-Hz repetition rate were used for excitation of the NIR and visible bands, respectively. Pulsed laser action was readily observed for both the 1064-nm and 532-nm pumping at or above the respective thresholds. The laser parameters of the 532-nm and 1064-nm excitations were similar, indicating that the IR band is responsible for laser action for both excitations.

Petricevic, V.↗
NASA NTRS1992

Tetravalent chromium (Cr(4+)) as laser-active ion for tunable solid-state lasers

Generation of femtosecond pulses from a continuous-wave mode-locked chromium-doped forsterite (Cr(4+):Mg2SiO4) laser has been accomplished. The forsterite laser was actively mode-locked using an acousto-optic modulator operating at 78 MHz with two Brewster high-dispersion glass prisms for intra-cavity chirp compensation. Transform-limited sub-100-fs pulses were routinely generated in the TEM(sub 00) mode with 85 mW of continuous power (with 1 percent output coupler), tunable over 1230-1280 nm. The shortest pulses of 60-fs pulsewidth were measured.

Seas, A.↗