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At least 19 records

Co-sputter deposition of Nb₃Sn layer into SRF cavity using Nb-Sn composite target

Nb₃Sn, with its superior superconducting critical temperature (Tc ~18.3 K) and superheating field (Hsh ~400 mT), is considered a promising material for superconducting radiofrequency (SRF) cavities, offering enhanced cryogenic performance compared to bulk niobium cavities. A Nb₃Sn coating technique has been developed for Nb SRF cavities using co-sputtering of Nb-Sn composite target in a DC cylindrical magnetron sputtering system. The composite target configuration and discharge conditions for co-sputtering were optimized to deposit Nb-Sn films on flat Nb substrates, followed by annealing to form Nb₃Sn. Multiple strategies have been explored to improve the surface homogeneity of the Nb₃Sn coating, including optimizing a two-step annealing process, annealing in Sn vapor, and a light Sn recoating process. A 1.5 µm Nb-Sn co-sputtered film was deposited on the interior of a 2.6 GHz Nb SRF cavity and annealed at 600 °C for 6 h, followed by 950 °C for 1 h. Cryogenic RF testing of the annealed cavity demonstrated a Tc of 17.8 K, confirming the formation of Nb₃Sn. Then, the annealed cavity underwent a light recoating treatment and attained a quality factor (Q0) of 8.5E+08 at 2.0 K.

Accelerator Physics↗

Co-sputtered CuNi heteroatomic electrocatalyst for enhanced 5-hydroxymethylfurfural selective electrochemical conversion

The electrochemical conversion of biomass-derived 5-hydroxymethylfurfural (HMF) represents a promising, economically viable, and environmentally sustainable approach for producing value-added chemicals using renewable energy and in situ hydrogen generated through water electrolysis. However, the electrochemical hydrogenation (ECH) of HMF remains challenging due to the inherently low catalytic activity and selectivity of the electrodes, compounded by competition with the kinetically favored hydrogen evolution reaction (HER) in aqueous electrolytes. In this work, we demonstrate that Cu x Ni 100−x heteroatomic thin films, fabricated via direct current (DC) magnetron co-sputtering, achieve a more than one order of magnitude increase in the HMF to 2,5-Bis-hydroxymethylfuran (BHMF) conversion rate, with nearly 50% faradic efficiency (FE) for BHMF, when compared to pure Cu and Ni electrodes (~ 10% BHMF FE). Our results suggest that the synergistic interaction between Cu and Ni creates an optimal catalytic environment for both HMF and adsorbed hydrogen (H ads ) species, thereby enhancing BHMF formation through the ECH pathway.

36 MATERIALS SCIENCE↗

Broad-range tuning of ferroelectric switching of La x Bi 1−x FeO 3 epitaxial films via digital doping using off-axis co-sputtering

To investigate the scope of ferroelectric behavior in La-substituted BiFeO 3 films, La x Bi 1−x FeO 3 epitaxial films were synthesized using off-axis co-sputtering on SrTiO 3 (001) and DyScO 3 (110) substrates with a SrRuO 3 bottom electrode layer. A digital-doping deposition method was used to enable precise control and continuous tuning of La concentration in high-quality LaxBi 1−x FeO 3 films across a wide range of x = 0.05–0.60, which was systematically investigated using piezoresponse force microscopy. Robust and reversible out-of-plane ferroelectric switching has been observed up to x = 0.35, while films with x ≥ 0.37 exhibit no measurable ferroelectric behavior, indicating a sharp ferroelectric-to-paraelectric phase transition between x = 0.35 and 0.37. This represents the highest reported La concentration in LaxBi 1−x FeO 3 films that retains ferroelectric ordering, highlighting opportunities to engineer ferroelectric and multiferroic properties in complex oxide heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Co-Sputtering of Nb3Sn into SRF Cavity Using Composite Target and Optimizing Surface Homogeneity

Nb₃Sn coating method for superconducting radiofrequency (SRF) cavity has been developed following co-sputtering of Nb-Sn composite target using a DC cylindrical sputter coater. Deposition parameters and annealing strategies were optimized for uniform Nb₃Sn coating. 1.5 m Nb-Sn film was deposited onto 2.6 GHz Nb SRF cavity and annealed at 600 C for 6 h, followed by 950 C for 1 h. Cryogenic RF testing confirmed Nb₃Sn formation with Tc = 17.8 K. A post-annealing light Sn recoating process improved the cavity s performance, achieving Q₀ = 8.5 10⁸ at 2.0 K.

Shakel, M. S. [Old Dominion U.]↗

A New Route to Improve the Material Quality of Nb3Sn with Zr Inclusion

Nb3Sn superconducting material promises significant potential to exceed the performance of niobium based superconducting radio frequency (SRF) accelerator cavities. With the aim of advancing the ongoing R&D efforts in improving the material quality of Nb3Sn SRF cavities, we studied how the inclusion of Zr in Nb3Sn matrix via co-sputtering process effects the microscopic structure and superconducting properties. Our results suggest co-sputtered Nb3SnZr alloy as a new prospective material platform to further advance the performance limits of SRF cavities.

Tripathi, Malvika [Fermilab]↗

Dielectric Engineering of ZnO@ZIF‐8 for High‐Performance Triboelectric Nanogenerators and Self‐Powered Humidity Sensors

Porous metal oxide–metal-organic framework (MO x @MOF) hybrids offer synergistic effects that enhance surface charge density, electronic structure, and textural properties, making them ideal for self-powered sensing applications. Here, uniform, and pinhole-free ternary porous ZnO–PTFE@ZIF-8 hybrid films are developed on room-temperature co-sputtered ZnO–polytetrafluoroethylene (PTFE) composite films, where ZnO serves as a self-sacrificial precursor to precisely regulate ZIF-8 (Zn-MeIm 2 ) growth through solvothermal methods. The resulting TENG achieves a high output power density of 0.67 mW cm −2 , attributed to the synergistic effects of fluorine-rich PTFE and methyl-functionalized ZIF-8, which enhance surface charge density and dielectric response. By tuning PTFE content in the ZnO–PTFE composite, the dielectric constant and triboelectric output is optimized. The ZP60@ZIF-8-based device also demonstrates excellent humidity sensing performance, with a wide detection range (20–99% RH) and ultrahigh sensitivity (R V % of 19 900%, R I % of 19 325% at 99% RH). These results position ZP@ZIF-8-based TENGs as promising platforms for next-generation self-powered sensors and smart wearable electronics.

42 ENGINEERING↗

WO 3 /CuWO 4 Ratio Controls Open-Circuit Photovoltage and Photocurrent in Type II Heterojunction Solar Fuel Photoelectrodes

WO 3 /CuWO 4 photoelectrodes for the oxygen evolution reaction benefit from a type II heterojunction for charge separation. However, the impact of the WO 3 /CuWO 4 ratio on the photocurrent and the photovoltage is not clear. To probe the effect of composition, Cu x W 1-x O y thin films with variable W:Cu ratio were prepared on FTO by reactive magnetron co-sputtering of W and Cu, followed by air annealing at 500ºC. EDS, XRD, Rietveld refinement, and Raman spectroscopy confirm the presence of crystalline WO 3 and CuWO 4 in the W rich films and increasing amounts of amorphous copper oxides in the Cu rich films. Bandgaps were determined by optical absorption spectroscopy, surface photovoltage spectroscopy (SPS), and photoaction spectra and are found to decrease from 2.7 eV to 1.2 eV with increasing copper oxide content. SPS reveals n-type semiconductor photoanode behavior for WO 3 /CuWO 4 samples and p-type photocathode behavior for CuO x rich films. Photoelectrochemical experiments confirm stable water oxidation with Faraday efficiency near unity for all W rich films and photocurrents that are increasing with CuWO 4 content. Optimal performance is seen for WO 3 /CuWO 4 mixed phases containing 47-75 mass% CuWO 4 . These compositions maximize charge separation at the type II heterojunction interface between the two materials. Additionally, according to incident photon to current efficiency (IPCE) data, the WO 3 improves photon conversion below 350 nm, while CuWO 4 improves conversion at 450-525 nm. Overall, this work shows for the first time how the WO 3 /CuWO 4 ratio controls the photovoltage and the photocurrent in type II heterojunction solar fuel photoelectrodes, and how copper oxides in the copper rich films severely degrade the performance. Furthermore, these results are useful in the context of bulk-heterojunction electrodes for the conversion of solar energy into fuels.

CuWO4↗

Thin Film Synthesis of SrZn2P2 with SrI2 Post-Annealing for Enhanced Crystallinity and Optoelectronic Quality

Ternary Zintl phosphides are promising light-absorbing semiconductors for thin-film optoelectronic applications, but strategies for controlling their microstructure and optoelectronic quality remain underexplored. Here, we report the synthesis of phase-pure SrZn2P2 thin films using radio-frequency co-sputtering in a PH3 + Ar atmosphere and investigate the impact of post-growth processing on their structural and optical properties. Grazing-incidence X-ray scattering and Raman spectroscopy confirm the formation of crystalline SrZn2P2 films over a finite compositional window. Optical measurements reveal clear absorption near the direct-band-gap energy (~1.8 eV) and near-band-edge photoluminescence. Further, we have studied the effects of chemically compatible halide-assisted annealing. It is found that SrI2 treatments lead to pronounced grain growth and reduced diffraction peak broadening while preserving phase purity, in contrast to rapid thermal or forming-gas annealing. Notably, annealing with SrI2 at 450 degrees C significantly enhances both the intensity and spatial uniformity of the photoluminescence, thus connecting the observed microstructural consolidation with improved radiative recombination. Our study demonstrates that halide-assisted annealing provides an effective pathway for microstructural control in SrZn2P2 thin films and highlights a generalizable processing strategy for advancing Zintl phosphide semiconductors toward optoelectronic applications.

14 SOLAR ENERGY↗

Superior plastic flow stability of self-patterned carbide – amorphous ceramic nanostructures

Amorphous ceramics and carbides exhibit superb strength but poor plasticity. Here, we synthesized TiC-SiOC nanostructures with TiC-nanocarbides embedded in amorphous ceramic SiOC by co-sputtering followed by high-temperature annealing and/or irradiation. TiC-SiOC nanostructures exhibit high strength and good plastic flow stability even after heavy irradiation, 7 GPa at room temperature and 3.6 GPa at 700 ℃ with a uniform strain of about 10%∼18%. The uniform deformation is accommodated by the shearing of amorphous ceramic and the rotation of nanocarbides. Nanocarbides inhibit the propagation of shear banding in amorphous SiOC, and amorphous-crystal interfaces act as sinks to manage irradiation-induced defects.

36 MATERIALS SCIENCE↗

Exploring Structural Anisotropy in Amorphous Tb-Co via Changes in Medium-Range Ordering

Amorphous thin films grown by magnetron co-sputtering exhibit changes in atomic structure with varying growth and annealing temperatures. Structural variations influence the bulk properties of the films. Scanning nanodiffraction performed in a transmission electron microscope (TEM) is applied to amorphous Tb 17 Co 83 (a-Tb-Co) films deposited over a range of temperatures to measure relative changes in medium-range ordering (MRO). These measurements reveal an increase in MRO with higher growth temperatures and a decrease in MRO with higher annealing temperatures. The trend in MRO indicates a relationship between the growth conditions and local atomic ordering. By tilting select films, the TEM measures variations in the local atomic structure as a function of orientation within the films. The findings support claims that preferential ordering along the growth direction results from temperature-mediated adatom configurations during deposition, and that oriented MRO correlates with increased structural anisotropy, explaining the strong growth-induced perpendicular magnetic anisotropy found in rare earth–transition metal films. Beyond magnetic films, we propose the tilted FEM workflow as a method of extracting anisotropic structural information in a variety of amorphous materials with directionally dependent bulk properties, such as films with inherent bonding asymmetry grown by physical vapor deposition.

36 MATERIALS SCIENCE↗

A15 phase Ta 3⁢ Sb thin films: Direct synthesis, charge transport, and spin-orbit torque

Ta 3 ⁢Sb is one of the A15 compounds that have been predicted to have giant spin Hall conductivities due to the gapped Dirac-like band crossings in their electronic structures. We use co-sputtering to directly synthesize thin films of Ta 3 ⁢Sb and identify a large window of Ta:Sb flux ratio that permits the formation of single-phase A15 structure. These sputtered films have an actual Ta:Sb atomic ratio of 4:1, as determined from Rutherford backscattering spectrometry. Their high resistivity, at the Mott-Ioffe-Regel limit, suggests that the electron mean free path is comparable to interatomic distances. From harmonic Hall and spin-torque ferromagnetic resonance measurements, the intrinsic spin Hall conductivity of thin film Ta 3 ⁢Sb is estimated to be in the range of −526 to −1230⁢(ℏ/𝑒)S/cm at 300 K, lower in magnitude than the predicted value of −1400⁢(ℏ/𝑒)S/cm . Here, first-principles calculations of the electronic structure show that the discrepancy is consistent with an increase of the Fermi level due to the nonideal stoichiometry needed to stabilize the A15 structure.

Density functional theory↗

Impact of high-temperature annealing on hafnia-silica composite coatings deposited via ion beam sputtering for high-peak power 1064 nm lasers

The maximum power handling fluence of high-peak and average power laser systems is often limited by the laser damage of the coatings on optical components. Furthermore, these multilayer dielectric coatings are limited in their maximum power handling due to laser-damage-prone defects in the lower optical bandgap, higher optical index material. Some of these defects can be mitigated by thermal annealing to high temperatures, which can greatly reduce the linear absorbative precursors. Typically, hafnia and silica are the materials of choice for high-peak and average power laser systems in the ultraviolet through infrared spectral range; however, hafnia crystalizes readily when annealed at high temperatures. In this study, we prepare composite HfO 2 -SiO 2 coatings by co-sputtering hafnia and silica in an ion beam sputtering system and compare them to pure hafnia-based coatings. We demonstrate that crystallinity in hafnia can be completely suppressed when it is mixed with silica, such as the composite coatings in this study. High reflectors were fabricated and annealed, demonstrating that the multilayer dielectric stacks can survive high-temperature annealing and exhibit an excellent linear absorption of 0.2 +/- 1 ppm at 1064 nm. Short- and long-pulse laser damage was explored, demonstrating the complex relationship between linear absorption and the non-linear absorption which drives pulsed laser damage. These results provide an excellent route to the creation of very low linear absorption optical coatings, which also utilize low scattering materials that are best suited for high-peak and average power applications.

Harthcock, Colin [Lawrence Livermore National Labo↗

Micro-Mechanically Guided High-Throughput Alloy Design Exploration Towards Metastability-Induced H Embrittlement Resistance

We develop a high-throughput approach for studying H embrittlement (HE)-resistance in alloys, which is based on combinatorial compositional screening of metastability effects by in situ scanning electron microscopy H-analyses. The project objective included: (i) technique development of high-throughput screening (HTS) for HE-resistance, (ii) discovery of new metallic materials with superior HE-resistance, (iii) Multiscale verification of HE-resistance of the new alloys and H-barrier layers, from atomic scale to an engineering scale. The investigation focused on a model system that enables exploration of different metastable states in Fe-based complex-concentrated alloys. Composition spread islands with hundreds of varying compositions are fabricated on a single substrate using a combinatorial co-sputtering technique. To screen these alloys, we developed and employed a home-built SEM-based integrated analysis system capable of characterizing H-permeability, H-trapping, H-influence on mechanical properties, and other material properties, as well as atomistic to continuum simulations to study the underlying physics.

08 HYDROGEN↗

An experimental study of high Tc superconducting microstrip transmission lines at 35 GHz and the effect of film morphology

Microstrip transmission lines in the form of ring resonators were fabricated from a number of in-situ grown laser ablated films and post-annealed co-sputtered YBa2Cu3O(7-x) films. The properties of these resonators were measured at 35 GHz and the observed performance is examined in light of the critical temperature (Tc) and film thickness and also the film morphology which is different for the two deposition techniques. It is found that Tc is a major indicator of the film performance for each growth type with film thickness becoming important as it decreases towards 100 A. It is also found that the films with a mixed grain orientation (both a axis and c axis oriented grains) have poorer microwave properties as compared with the primarily c axis oriented material. This is probably due to the significant number of grain boundaries between the different crystallites, which may act as superconducting weak links and contribute to the surface resistance.

Chorey, C. M.↗

An experimental study of high Tc superconducting microstrip transmission lines at 35 GHz and the effect of film morphology

Microstrip transmission lines in the form of ring resonators were fabricated from a number of in-situ grown laser ablated films and post-annealed co-sputtered YBa2Cu3O(7-x) films. The properties of these resonators were measured at 35 GHz and the observed performance is examined in light of the critical temperature (Tc) and film thickness, and also the film morphology, which is different for the two deposition techniques. It is found that Tc is a major indicator of the film performance for each growth type, with film thickness becoming important as it decreases towards 1000 A. It is also found that the films with a mixed grain orientation (both a-axis and c-axis oriented grains) have poorer microwave properties as compared with the primarily c-axis oriented material. This is probably due to the significant number of grain boundaries between the different crystallites, which may act as superconducting weak links and contribute to the surface resistance.

Chorey, C. M.↗

Z-Scan Measurements on Au/SiO2 Composite Films

Z-Scan measurements were performed on Au/SiO2 composite films produced by a co-sputtering technique and compared with effective medium theories which consider the full complex nature of chi(3).

Bender, Matthew W.↗

ITO-MgF2 Film Development for PowerSphere Polymer Surface Protection

Multi-kilogram class microsatellites with a PowerSphere electric power system are attractive for fulfilling a variety of potential NASA missions. However, PowerSphere polymer surfaces must be coated with a film that has suitable electrical sheet resistivity for electrostatic discharge control, be resistant to atomic oxygen attack, be transparent to ultraviolet light for composite structure curing and resist ultraviolet light induced darkening for efficient photovoltaic cell operation. In addition, the film must be tolerant of polymer layer folding associated with launch stowage of PowerSphere inflatable structures. An excellent film material candidate to meet these requirements is co-sputtered, indium oxide (In2O3) - tin oxide (SnO2), known as 'ITO', and magnesium fluoride (MgF2). While basic ITO-MgF2 film properties have been the subject of research over the last decade, further research is required in the areas of film durability for space-inflatable applications and precise film property control for large scale commercial production. In this paper, the authors present film durability results for a folded polymer substrate and film resistance to vacuum UV darkening. The authors discuss methods and results in the area of film sheet resistivity measurement and active control, particularly dual-channel, plasma emission line measurement of ITO and MgF2 plasma sources. ITO-MgF2 film polymer coupon preparation is described as well as film deposition equipment, procedures and film characterization. Durability testing methods are also described. The pre- and post-test condition of the films is assessed microscopically and electrically. Results show that an approx. 500A ITO-18vol% MgF2 film is a promising candidate to protect PowerSphere polymer surfaces for Earth orbit missions. Preliminary data also indicate that in situ film measurement methods are promising for active film resistivity control in future large scale production. Future film research plans are also discussed.

Hambourger, Paul D.↗