The Influence of Impurities on the Properties of the Cr/Au and Cr/CrN/Au Structures
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chromium bond gold layer transmission electron mic↗
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Comparative study on the formation of Cr and Ti ohmic contacts to (001) β -Ga 2 O 3
Here, a comparative study of Cr/Au and Ti/Au ohmic contacts on (001) β-Ga 2 O 3 was conducted. The electrical behavior from current-voltage measurements and the interfacial composition and microstructure as determined from high-resolution transmission electron microscopy (TEM) with energy dispersive x-ray analysis were compared for the different contacts at selected points in an annealing series (300–700 °C, 1 min. anneals in N 2 ). Cr/Au contacts became ohmic at temperatures (300–350 °C) approximately 50–100 °C lower than Ti/Au contacts (400–450 °C). Cr/Au and Ti/Au contacts demonstrated optimal ohmic behavior (lowest resistance) when annealed to 450–500 and 500–600 °C, respectively, with Ti/Au contacts yielding a lower total resistance than Cr/Au. Cross-sectional TEM images of Cr/Au contacts annealed at 450 °C revealed the presence of Au nanoclusters at the Ga 2 O 3 interface and CrO x layers at both the top of the contact and the Ga 2 O 3 interface. Whereas TiO x also formed at the top and bottom interfaces in 450 °C-annealed Ti/Au contacts, the TiO x surface layer appeared to be variable in thickness and/or discontinuous, unlike the CrO x surface layer. Au nanoclusters were not detected at the interface in the Ti/Au contacts. The interdiffusion and oxidation observed in both contact metallizations point to the need for diffusion barriers that may allow these contacts to be used in future Ga 2 O 3 -based devices that operate at elevated temperatures.
36 MATERIALS SCIENCE↗
Temperature-Agnostic Pt/Au Ohmic Contacts on n -Type Gallium Nitride for Self-Aligned MOSFETs
Five alternative metals are investigated as ohmic contacts to n-GaN including Cr/Au, Mo/Au, Pt/Au, Pd/Au, and Ge/Au. Ti-based contacts are traditionally used for ohmic contacts on n-GaN. However, conventional Ti/Al/Ni/Au metallization is found to be incompatible with a self-aligned process for GaN trench MOSFETs due to wet etch restrictions. Therefore, an alternative metallization is needed that is unreactive to the etch chemistry used in the self-aligned process. Additionally, the contact should remain ohmic following anneal at 900 °C so that contact formation can precede the anneal required for p-dopant activation. Here, in the present work, an n-GaN bilayer, consisting of a thin heavily doped contact layer (n 0 = 1 × 10 20 cm −3 ) atop a thick lesser doped layer, is used to demonstrate ohmic contacts of alternative metals with low specific contact resistance and extended thermal budget. Cr/Au ohmic contacts are demonstrated up to anneal temperatures of 800 °C, an increase of 200 °C compared to the highest known reports for Cr/Au contacts on n-GaN. Pt/Au metallization is demonstrated as an ohmic contact to n-GaN for the first time and exhibits true temperature-agnostic behavior up to anneal temperatures of 900 °C with specific contact resistance that is near parity with Ti/Al/Ni/Au. The temperature-agnostic behavior of Pt/Au ohmic contacts on the n-GaN bilayer, in addition to chemical compatibility with the self-aligned process, positions Pt/Au contacts as a key enabling element for self-aligned trench MOSFETs on GaN.
Reilly, Kevin James [Sandia National Laboratories ↗
Transmission Lines for High Frequency and High Density Packaging
We report on resistivity and chemical stability of Cr/Au bilayers deposited by sputtering on three kinds of substrates: alumina, aluminum nitride and aluminum nitride coated alumina. The insertion loss of Cr/Au microstrip lines fabricated on these three substrates was low and stable after 100 cycles in the -65 degree C to 125 degree C temperature range.
high-frequency↗
Phase-Controllable Synthesis of Ultrathin Molybdenum Nitride Crystals Via Atomic Substitution of MoS 2
MXenes are emerging members in the two-dimensional (2D) material family and are highlighted by their high electrical conductivity. Among different MXenes, molybdenum-based MXenes, especially molybdenum nitrides (MoN x ), are rarely accessible through the common synthetic approach of selective etching due to the absence of stable MAX phase precursors. In this work, we apply the atomic substitution approach to synthesize two phases of ultrathin nonlayered molybdenum nitrides (i.e., Mo 5 N 6 and δ-MoN) from 1.6 to 42.9 nm thickness by converting layered MoS 2 under different temperatures. The morphology and 2D nature of MoS 2 are well remained in both phases. These newly created 2D materials are further characterized using Raman spectroscopy, high-resolution transmission electron microscopy, and electrical measurements, suggesting that both phases are highly crystalline and highly conductive down to the thickness of a few nanometers. Moreover, Ohmic contacts are formed between the ultrathin nitrides and Cr/Au electrodes, suggesting the great potential of the obtained nitrides for nanoelectronic device applications. The stability test shows that the Ohmic contact is well maintained after 4 weeks under ambient conditions with a slight degradation in conductivity. Furthermore, this study extends the 2D family by providing highly conductive members, offering desired building blocks for solid-state nanoelectronic devices.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Thermal stability of GaAs heteroface solar cells with differing contact materials
GaAlAs/GaAs heteroface solar cells used in space offer advantages of higher operating temperatures and recovery from radiation damage using thermal annealing. Elevated temperature experiments were conducted to evaluate the electrical stability of cells with different contact materials. These experiments indicate that for operation of GaAs heteroface solar cells at elevated temperatures, front contact metals must be carefully chosen. The short circuit current varied by only about 3% for cells with Pd/Ag contacts that were heated to 240 C for a total of 500 hours. However, a total decrease in the open circuit voltage of about 20% was observed for these cells. After heating cells to 400 C, large changes in open circuit voltage were observed for cells with Pd/Ag, Pd/Au, Pd, Ag, and Ti contacts; however, preliminary results indicate more stable open circuit voltages for cells with Au, Cr, Zn, and Cr/Au contacts.
Friesen, W. J.↗
Nanotip Carpets as Antireflection Surfaces
Carpet-like random arrays of metal-coated silicon nanotips have been shown to be effective as antireflection surfaces. Now undergoing development for incorporation into Sun sensors that would provide guidance for robotic exploratory vehicles on Mars, nanotip carpets of this type could also have many uses on Earth as antireflection surfaces in instruments that handle or detect ultraviolet, visible, or infrared light. In the original Sun-sensor application, what is required is an array of 50-micron-diameter apertures on what is otherwise an opaque, minimally reflective surface, as needed to implement a miniature multiple-pinhole camera. The process for fabrication of an antireflection nanotip carpet for this application (see Figure 1) includes, and goes somewhat beyond, the process described in A New Process for Fabricating Random Silicon Nanotips (NPO-40123), NASA Tech Briefs, Vol. 28, No. 1 (November 2004), page 62. In the first step, which is not part of the previously reported process, photolithography is performed to deposit etch masks to define the 50-micron apertures on a silicon substrate. In the second step, which is part of the previously reported process, the non-masked silicon area between the apertures is subjected to reactive ion etching (RIE) under a special combination of conditions that results in the growth of fluorine-based compounds in randomly distributed formations, known in the art as "polymer RIE grass," that have dimensions of the order of microns. The polymer RIE grass formations serve as microscopic etch masks during the next step, in which deep reactive ion etching (DRIE) is performed. What remains after DRIE is the carpet of nano - tips, which are high-aspect-ratio peaks, the tips of which have radii of the order of nanometers. Next, the nanotip array is evaporatively coated with Cr/Au to enhance the absorption of light (more specifically, infrared light in the Sun-sensor application). The photoresist etch masks protecting the apertures are then removed by dipping the substrate into acetone. Finally, for the Sun-sensor application, the back surface of the substrate is coated with a 57-nm-thick layer of Cr for attenuation of sunlight.
Bae, Youngsam↗
Carbon Nanotube-Based Structural Health Monitoring Sensors
Carbon nanotube (CNT)-based sensors for structural health monitoring (SHM) can be embedded in structures of all geometries to monitor conditions both inside and at the surface of the structure to continuously sense changes. These CNTs can be manipulated into specific orientations to create small, powerful, and flexible sensors. One of the sensors is a highly flexible sensor for crack growth detection and strain field mapping that features a very dense and highly ordered array of single-walled CNTs. CNT structural health sensors can be mass-produced, are inexpensive, can be packaged in small sizes (0.5 micron(sup 2)), require less power than electronic or piezoelectric transducers, and produce less waste heat per square centimeter than electronic or piezoelectric transducers. Chemically functionalized lithographic patterns are used to deposit and align the CNTs onto metallic electrodes. This method consistently produces aligned CNTs in the defined locations. Using photo- and electron-beam lithography, simple Cr/Au thin-film circuits are patterned onto oxidized silicon substrates. The samples are then re-patterned with a CNT-attracting, self-assembled monolayer of 3-aminopropyltriethoxysilane (APTES) to delineate the desired CNT locations between electrodes. During the deposition of the solution-suspended single- wall CNTs, the application of an electric field to the metallic contacts causes alignment of the CNTs along the field direction. This innovation is a prime candidate for smart skin technologies with applications ranging from military, to aerospace, to private industry.
Wincheski, Russell↗