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NASA NTRS1972

Measurements of electron detection efficiencies in solid state detectors.

Detailed laboratory measurement of the electron response of solid state detectors as a function of incident electron energy, detector depletion depth, and energy-loss discriminator threshold. These response functions were determined by exposing totally depleted silicon surface barrier detectors with depletion depths between 50 and 1000 microns to the beam from a magnetic beta-ray spectrometer. The data were extended to 5000 microns depletion depth using the results of previously published Monte Carlo electron calculations. When the electron counting efficiency of a given detector is plotted as a function of energy-loss threshold for various incident energies, the efficiency curves are bounded by a smooth envelope which represents the upper limit to the detection efficiency. These upper limit curves, which scale in a simple way, make it possible to easily estimate the electron sensitivity of solid-state detector systems.

Lupton, J. E.↗

DOE OSTI2025

Corrosion Response of Ni-19Cr-5Fe in Molten NaCl-MgCl 2 Salt

Ni-based alloys are strong candidates for use in high-temperature molten salt reactors due to their superior corrosion resistance and mechanical stability compared to stainless steels. In this study, the static corrosion behavior of a Ni-19Cr-5Fe model alloy was systematically evaluated in a purified molten NaCl-MgCl 2 salt at 700°C for 30, 240, and 500 h. Post-exposure analyses were conducted to assess microstructural evolution, corrosion depth, and elemental depletion profiles. Corrosion rates, quantified by chromium depletion depth, followed an inverse power-law trend with increasing exposure time, indicating diffusion-limited kinetics. This trend is attributed to limitations in mass transport in the static salt and to the progressive local depletion of reactive chromium species. Coupled electron backscatter diffraction and energy dispersive X-ray spectroscopy analysis further revealed that the grain boundary character significantly influences corrosion susceptibility: high-angle grain boundaries exhibited pronounced Cr depletion and pitting, while low-angle and Σ3 boundaries remained comparatively resistant. These results offer valuable insight into the role of microstructure in corrosion processes and reinforce the importance of time-dependent material evaluation in molten salt environments relevant to advanced reactor designs.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2026

Beam test performance of AstroPix sensor with 120 GeV protons

AstroPix is a High-Voltage CMOS Monolithic Active Pixel Sensor (HV-CMOS MAPS) developed for precision gamma-ray imaging and spectroscopy in the medium-energy regime, as well as for precise shower imaging and tracking in the Barrel Imaging Calorimeter (BIC) of the Electron Proton/Ion Collider (ePIC) detector at the future Electron–Ion Collider (EIC). We present beam test results of the AstroPix_v3 sensor using a 120 GeV proton beam at the Fermilab Test Beam Facility (FTBF), performed as part of the broader experimental campaign for the BIC prototype calorimeter. The sensor’s 500 µm pixel pitch enabled precise measurement of the beam profile, providing important information for the calorimeter performance studies. Using the measured 120 GeV proton data, we measure the energy deposit of minimum ionizing particles (MIP) and use them to extract the corresponding effective depletion depth at a single bias voltage of −150 V .

AstroPix↗

NASA NTRS1996

Effect of variations in the doping profiles on the properties of doped multiple quantum well avalanche photodiodes

The purpose of this study is to use both theoretical and experimental evidence to determine the impact of doping imbalance and symmetry on the physical and electrical characteristics of doped multiple quantum well avalanche photodiodes (APD). Theoretical models have been developed to calculate the electric field valence and conduction bands, capacitance-voltage (CV), and carrier concentration versus depletion depth profiles. The models showed a strong correlation between the p- and n-doping balance inside the GaAs wells and the number of depleted stages and breakdown voltage of the APD. A periodic doping imbalance in the wells has been shown to result in a gradual increase (or decrease) in the electric field profile throughout the device which gave rise to partially depleted devices at low bias. The MQW APD structures that we modeled consisted of a 1 micron top p(+)-doped (3 x 10(exp 18) cm(exp -3)) GaAs layer followed by a 1 micron region of alternating layers of GaAs (500 A) and Al(0.42)Ga(0.58)As (500 A), and a 1 micron n(+) back layer (3 x 10(exp 18) cm(exp -3)). The GaAs wells were doped with p-i-n layers placed at the center of each well. The simulation results showed that in an APD with nine doped wells, and where the 50 A p-doped layer is off by 10% (p = 1.65 x 10(exp 18) cm(exp -3), n = 1.5 x 10(exp 18) cm(exp -3)), almost half of the MQW stages were shown to be undepleted at low bias which was a result of a reduction in the electric field near the p(+) cap layer by over 50% from its value in the balanced structure. Experimental CV and IV data on similar MBE grown MQW structures have shown very similar depletion and breakdown characteristics. The models have enabled us to better interpret our experimental data and to determine both the extent of the doping imbalances in the devices as well as the overall p- or n-type doping characteristics of the structures.

Menkara, H. M.↗

DOE OSTI2025

AstroPix: A pixelated HVCMOS sensor for space-based gamma-ray measurement

A next-generation medium-energy gamma-ray telescope targeting the MeV range would address open questions in astrophysics regarding how extreme conditions accelerate cosmic-ray particles, produce relativistic jet outflows, and more. One concept, AMEGO-X, relies upon the mission-enabling CMOS Monolithic Active Pixel Sensor silicon chip AstroPix. AstroPix is designed for space-based use, featuring low noise, low power consumption, and high scalability. Desired performance of the device include an energy resolution of 5 keV (or 10% FWHM) at 122 keV and a dynamic range per-pixel of 25–700 keV, enabled by the addition of a high-voltage bias to each pixel which supports a depletion depth of 500 μ m. This work reports on the status of the AstroPix development process with emphasis on the current version under test, version three (v3), and highlights of version two (v2). Version 3 achieves energy resolution of 10.4 ± 3.2% at 59.5 keV and 94 ± 6 μ m depletion in a low-resistivity test silicon substrate.

Astrophysics instrumentation↗

DOE OSTI2026

Elucidating the impact of stress states on grain boundary passivation in Ni-5Cr using the Rhines pack method

The oxidation behavior of a Ni–5Cr (at.%) alloy was evaluated at 420 ° C using the Rhines pack method and simultaneous tensile and compressive stress states via a miniature four-point bending fixture. At this moderate temperature, grain boundaries dominate mass transport and the resulting oxidation response. Oxidation produced approximately 1μ⁢m-wide protective Cr 2 O 3 films capping some grain boundaries and penetrative, intergranular Cr-rich oxides at other grain boundaries. Externally applied tensile and compressive stress during oxidation increased the prevalence of Cr 2 O 3 cap formation compared to no applied stress, with tensile stress resulting in more Cr 2 O 3 caps than compressive stress. The observed oxide cap morphology was similar across all test conditions. Regions under compressive stress showed an order of magnitude greater Cr depletion depth along the grain boundary. Chromium nitrides (CrN), likely from N contamination of the Rhines pack cell, were observed both at the oxide–metal interface and intergranularly within the alloy. Collectively these results demonstrate that applied stress promotes localized protective oxide cap formation over grain boundaries, with compressive stress additionally promoting deeper Cr depletion. Furthermore the experimental approach helped separate out the effects of stress on local oxide formation and grain boundary passivation.

4 point bend↗

DOE OSTI2024

Globally Gridded Groundwater Extraction Volumes and Costs under Six Depletion and Ponded Depth Targets

This repository contains simulated outputs from superwell – a hydro-economic tool for long-term assessment of groundwater cost and supply – providing globally gridded groundwater extractable volumes and associated unit costs ($/km³) for accessible groundwater production, based on a variety of user-defined depletion and ponded depth scenarios. Key model documentation: Niazi, H., Ferencz, S. B., Graham, N. T., Yoon, J., Wild, T. B., Hejazi, M., Watson, D. J., & Vernon, C. R. (2025). Long-term hydro-economic analysis tool for evaluating global groundwater cost and supply: Superwell v1.1. Geoscientific Model Development, 18(5), 1737-1767. https://doi.org/10.5194/gmd-18-1737-2025 Find the source code of the superwell model on GitHub: https://github.com/JGCRI/superwell Repository Overview Main output: superwell_outputs.7z contains 6 files (4.5 GB) named as superwell_py_deep_all_0.*PD_0.*DL.csv. These files present superwell outputs of global groundwater extraction volumes and cost estimates on a 0.5° scale for six scenarios with different Ponded Depth (PD; 0.3 and 0.6 m) and Depletion Limit (DL; 5%, 25%, and 40% of available volume) targets over the entire pumping lifetime of a grid cell superwell_py_deep_all_0.3PD_0.25DL_sample_100.csv contains superwell outputs for 100 data points sampled to match the global inputs' distribution superwell_py_deep_all_0.3PD_0.25DL_Grid_72548.csv contains superwell output for a single grid cell concept_v5.png provides an overview of the superwell workflow Outputs Description year_number: year of pumping depletion_limit: set depletion limit (DL) as a volume fraction of total available groundwater Mappings: continent, country, gcam_basin_id, Basin_long_name, grid_id: geographic identifiers and basin information Inputs: grid_area (km²): area of the grid cell whyclass: hydrogeological classification of the aquifer permeability (m/day), porosity (%), total_thickness (m), depth_to_water (m): aquifer properties. The geo-processed input data has been published separately: https://doi.org/10.57931/2307831 Model outputs: orig_aqfr_sat_thickness (m), aqfr_sat_thickness (m): original and remaining/instantaneous saturated thickness of the aquifer hydraulic_conductivity (m/day), transmissivity (m²/day): hydraulic properties of the aquifer radius_of_influence (m), areal_extent (km²): well radius and area of influence from the center of the well number_of_wells (-): number of wells in a grid cell determined by a ratio of well area and grid area max_drawdown (m), drawdown (m), drawdown_interference (m): well and aquifer drawdown during extraction total_head (m): total lift for the groundwater (depth to water plus drawdown) total_well_length (m): total depth of wells drilled well_yield (m³/day): pumping rate or well yield power (kW), energy (kWh): power and energy required for pumping groundwater Volume Outputs: volume_produced_perwell (m³), cumulative_vol_produced_perwell (m³): production volume metrics per well volume_produced_allwells (m³), cumulative_vol_produced_allwells (m³): aggregate extraction volumes for all wells in a grid cell available_volume (m³): available groundwater in storage for the grid cell as determined by aquifer properties depleted_vol_fraction: fraction of total volume pumped over available volumes in a grid cell (same as depletion limit) Cost Outputs: well_installation_cost ($): well installation cost based on the hydrogeological complexity of the aquifer annual_capital_cost, maintenance_cost, nonenergy_cost ($): nonenergy costs energy_cost_rate ($/kWh): electricity rate energy_cost ($): energy cost of pumping groundwater total_cost_perwell ($), total_cost_allwells ($): total annual energy and non-energy cost for each and all wells in a grid cell a unit_cost ($/m³), unit_cost_per_km3 ($/km³), unit_cost_per_acreft ($/acre-ft): total cost of pumping a unit of groundwater, indicated for different spatial units Key Resources Model documentation: Niazi, H., Ferencz, S., Graham, N., Yoon, J., Wild, T., Hejazi, M., Watson, D., & Vernon, C. (2024; In-prep). Long-term Hydro-economic Assessment Tool for Evaluating Global Groundwater Cost and Supply: Superwell v1. Geoscientific Model Development. Input data: Niazi, H., Watson, D., Hejazi, M., Yonkofski, C., Ferencz, S., Vernon, C., Graham, N., Wild, T., & Yoon, J. (2024). Global Geo-processed Data of Aquifer Properties by 0.5° Grid, Country and Water Basins. MSD-LIVE Data repository. https://doi.org/10.57931/2307831 superwell source code: https://github.com/JGCRI/superwell Cite as Niazi, H., Ferencz, S., Yoon, J., Graham, N., Wild, T., Hejazi, M., Watson, D., & Vernon, C. (2024). Globally Gridded Groundwater Extraction Volumes and Costs under Six Depletion and Ponded Depth Targets. MSD-LIVE Data repository. https://doi.org/10.57931/2307832 Contact Reach out to Hassan Niazi or Stephen Ferencz or open an issue in the superwell repository for questions or suggestions.

Earth Systems↗

DOE OSTI2025

Investigation of Corrosion Behavior of Carbide Phase Strengthened Nickel‐Based Alloy in Molten Fluoride Salt

The corrosion behavior of a high creep strength carbide-phase strengthened Ni-based alloy in molten FLiNaK (LiF-NaF-KF: 46.5-11.5-42 mol%) salt in the temperature range of 700°C–750°C has been investigated as a part of the development of structural alloys for fluoride salt-based molten salt reactors (MSRs). The alloy composition was designed based on Hastelloy-N, but with the goal of improving creep strength. Cr depletion depth, a measure of corrosion, was observed to be single micrometers after several hundred hours of corrosion testing. Sequential corrosion testing involving testing of pre-tested samples in fresh salt coupled with SEM-EDS, scanning transmission electron microscopy (STEM) examinations and thermodynamic and kinetic modeling, suggest that the corrosion rate at the alloy-salt interface is governed by diffusion of elements from the alloy bulk to the surface. The carbide phases in the corrosion-tested sample microstructure were identified to be largely M 6 C-type Mo-rich carbides and MC-type mixed carbides. Atom probe tomography (APT) showed some partitioning of Cr and Ti to the carbide phase and showed the carbide phases to be stable at the salt-facing surface.

Gordon, Ryan [Univ. of Wisconsin, Madison, WI (Uni↗

DOE OSTI2024

First measurements of energetic protons in Mega Amp Spherical Tokamak Upgrade (MAST-U)

First proton production rates from the d(d,p)t reaction in the Mega Amp Spherical Tokamak Upgrade (MAST-U) are measured. The data were taken during the MAST-U experimental campaign with an upgraded version of the proton detector (PD) previously used in MAST. The new detector array consists of three collimated silicon surface barrier detectors with a depletion depth of 300 μm and a collimated 120 μm thick diamond detector, mounted on the MAST-U reciprocating probe arm. This array measures the energies of unconfined energetic 3 MeV protons and 1 MeV tritons mainly produced by beam-thermal DD reactions during neutral beam injection heating. Diamond detectors have the potential to be uniquely suited to detect charged fusion products as they promise to be much more radiation resistant and much less sensitive to temperature variations compared to silicon-based detectors. Using silicon and diamond-based detectors simultaneously allowed us to directly compare the performance of these two detector types. PD particle rates measured during different plasma scenarios are presented and compared to neutron rates measured using the neutron camera upgrade and TRANSP predictions.

Instruments & Instrumentation↗

DOE OSTI2020

The Critical Role of AlInP Window Design in III–V Rear-Emitter Solar Cells

This article highlights the critical role of window design on short circuit carrier collection in rear-emitter solar cells, as demonstrated through modeling and experiment using metamorphic GaAs y P 1-y . Ultimately, if the window design is not carefully considered, surface depletion caused by Fermi level pinning at the window/air interface can extend into regions of active collection resulting in a large increase in effective window/base interface recombination velocity. This was experimentally shown here to result in a potential AM1.5G photocurrent loss of 8.1 mA/cm 2 , or nearly 50%, based on integrated internal quantum efficiency (IQE). Associated IQE modeling and curve fitting indicate that the effective IRV at the GaAs 0.75 P 0.25 /Al 0.64 In 0.36 P interface is increased by multiple orders of magnitude when the window is not sufficiently thick or doped to fully contain the surface depletion to within the window layer. Calculations of the surface depletion depth as a function of doping and the surface Fermi pinning energy level provides insight into the fundamental limits of window thickness. As a result, this allows the estimation of the Al 0.64 In 0.36 P surface pinning level to be at least 1.25 eV below the conduction band edge, or in the bottom half of the bandgap.

14 SOLAR ENERGY↗

NASA NTRS1982

The development and applications of charge-coupled devices for space astronomy

The developments in charge-coupled device technology over the past decade are reviewed, with emphasis on the relevance of these developments to astronomical applications. The characteristics and limitations of current commercial devices are described, and the future requirements on CCDs for space astronomy are summarized for the X-ray and near UV, optical, and infrared wavelength ranges. Emphasis is placed on the commonality of technological development which is called for, including the issues of quantum detection efficiency (photon entrance and depletion depth), charge transfer efficiency, modulation transfer function, output noise level, and array size. The system requirements on focal plane instrumentation for space astronomy are summarized, and shown to have much in common for the different wavelength bands. These requirements are discussed in terms of CCD mosaicing, cryogenic cooling, and electronics. The overlap in CCD developments in the defense, astronomical and commercial arenas is summarized.

Griffiths, R. E.↗

NASA NTRS1988

Extremely low resistance nonalloyed ohmic contacts on GaAs using InAs/InGaAs and InAs/GaAs strained-layer superlattices

Employing a structure consisting of n(+)-InAs/InGaAs and InAs/GaAs strained-layer superlattices (SLSs) grown by molecular beam epitaxy on GaAs films, nonalloyed contact resistances less than 8.5 x 10 to the -8th ohm sq cm have been obtained. Self-consistent simulations show that these extremely small nonalloyed contact resistances are due to the suppression of the depletion depth in the GaAs channel and tunneling through the SLS layer. Similar structures on InGaAs channels have led to nonalloyed specific contact resistances of about 1.5 x 10 to the -8th ohm sq cm. These results represent the smallest figures reported for these important material systems.

Peng, C. K.↗

DOE OSTI2024

Diverse organic carbon dynamics captured by radiocarbon analysis of distinct compound classes in a grassland soil

Soil organic carbon (SOC) is a large, dynamic reservoir composed of a complex mixture of plant- and microbe-derived compounds with a wide distribution of cycling timescales and mechanisms. The distinct residence times of individual carbon components within this reservoir depend on a combination of factors, including compound reactivity, mineral association, and climate conditions. To better constrain SOC dynamics, bulk radiocarbon measurements are commonly used to trace biosphere inputs into soils and to estimate timescales of SOC cycling. However, understanding the mechanisms driving the persistence of organic compounds in bulk soil requires analyses of SOC pools that can be linked to plant sources and microbial transformation processes. Here, we adapt approaches, previously developed for marine sediments, to isolate organic compound classes from soils for radiocarbon ( 14 C) analysis. We apply these methods to a soil profile from an annual grassland in Hopland, California (USA), to assess changes in SOC persistence with depth (down to 1 m). We measured the radiocarbon values of water-extractable organic carbon (WEOC), total lipid extracts (TLEs), total hydrolyzable amino acids (AAs), and an acid-insoluble (AI) fraction from bulk and physically separated size fractions (< 2 mm, 2 mm–63 µm, and < 63 µm). Our results show that Δ 14 C values of bulk soil, size fractions, and extracted compound classes became more depleted with depth, and individual SOC components have distinct age–depth distributions that suggest distinguishable cycling rates. We found that AAs and TLEs cycle faster than the bulk soils and the AI fraction. The AI was the most 14 C-depleted fraction, indicating that it is the most chemically inert in this soil. Our approach enables the isolation and measurement of SOC fractions that separate functionally distinct SOC pools that can cycle relatively quickly (e.g., plant and microbial residues) from more passive or inert SOC pools (associated with minerals or petrogenic) from bulk soils and soil physical fractions. With the effort to move beyond SOC bulk analysis, we find that compound class 14 C analysis can improve our understanding of SOC cycling and disentangle the physical and chemical factors driving OC cycling rates and persistence.

58 GEOSCIENCES↗

DOE OSTI2021

High-Voltage CMOS Active Pixel Sensor

The high-voltage CMOS (HVCMOS) sensors are a novel type of CMOS active pixel sensors for ionizing particles that can be implemented in CMOS processes with deep n-well option. The pixel contains one sensor electrode formed with a deep n-well implanted in a p-type substrate. CMOS pixel electronics, embedded in shallow wells, are placed inside the deep n-well. By biasing the substrate with a high negative voltage and by the use of a lowly doped substrate, a depleted region depth of at least 30 µm can be achieved. The electrons generated by a particle are collected by drift, which induces fast detectable signals. This publication presents a 4.2-cm 2 large HVCMOS pixel sensor implemented in a commercial 180-nm process on a lowly doped substrate and its characterization.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

NASA NTRS1977

Estimated winter wheat yield from crop growth predicted by LANDSAT

An evapotranspiration and growth model for winter wheat is reported. The inputs are daily solar radiation, maximum temperature, minimum temperature, precipitation/irrigation and leaf area index. The meteorological data were obtained from National Weather Service while LAI was obtained from LANDSAT multispectral scanner. The output provides daily estimates of potential evapotranspiration, transpiration, evaporation, soil moisture (50 cm depth), percentage depletion, net photosynthesis and dry matter production. Winter wheat yields are correlated with transpiration and dry matter accumulation.

Kanemasu, E. T.↗

NASA NTRS1988

Minority-carrier lifetime analysis of silicon epitaxy and bulk crystals with nonuniformly distributed defects

Existing analyses of the pulsed response of an MOS capacitor for minority-carrier lifetime determination result in a lifetime value averaged over most of the depletion region width. In this report, an analysis of MOS C-t data is presented that enables minority-carrier generation lifetime to be plotted as a function of depletion region depth. The technique is shown to be useful for samples with bulk or buried interfacial layer defects that have defect-free surfaces. Data are presented for intrinsically gettered bulk crystals and extrinsically gettered Si(2-pct Ge) epitaxial layers with misfit dislocations. In addition, for samples that do have uniform lifetimes, the measurement time required for determining carrier lifetime has been reduced by more than an order of magnitude.

Radzimski, Zbignew↗

NASA NTRS1985

Method of measuring field funneling and range straggling in semiconductor charge-collecting junctions

Electric-field funneling length is measured while irradiating a semiconductor charge-collecting junction with electron-hole-pair generating charged particles at a first junction bias voltage. The bias voltage is then reduced to a second level in order to reduce the depth of the depletion region such that the total charge can no longer be collected by drift and measured in the energy band previously displayed in the multichannel analyzer. This is representative of the maximum electric field funneling length which may be calculated by measuring the difference at the second bias voltage level of the depletion width and the ion penetration range. The bias voltage is further lowered to a third level at which the particles are collected over a spread of energy levels while at least some of the particles are still collected at the selected energy level. From this the different depths of penetration of the particles are determined while additional effects due to diffusion are minimized.

Zoutendyk, J. A.↗

NASA NTRS1987

Method of measuring field funneling and range straggling in semiconductor charge-collecting junctions

Electric-field funneling length is measured while irradiating a semiconductor charge-collecting junction with electron-hole-pair generating charged particles at a first junction bias voltage. The bias voltage is then reduced to a second level in order to reduce the depth of the depletion region such that the total charge can no longer be collected by drift and measured in the energy band previously displayed in the multichannel analyzer. This is representative of the maximum electric field funnelling length which may be calculated by measuring the difference at the second bias voltage level of the depletion width and the ion penetration range. The bias voltage is further lowered to a third level at which the particles are collected over a spread of energy levels while at least some of the particles are still collected at the selected energy level. From this the different depths of penetration of the particles are determined while additional effects due to diffusion are minimized.

Zoutendyk, John A.↗