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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

Alumina Based 500 C Electronic Packaging Systems and Future Development

NASA space and aeronautical missions for probing the inner solar planets as well as for in situ monitoring and control of next-generation aeronautical engines require high-temperature environment operable sensors and electronics. A 96% aluminum oxide and Au thick-film metallization based packaging system including chip-level packages, printed circuit board, and edge-connector is in development for high temperature SiC electronics. An electronic packaging system based on this material system was successfully tested and demonstrated with SiC electronics at 500 C for over 10,000 hours in laboratory conditions previously. In addition to the tests in laboratory environments, this packaging system has more recently been tested with a SiC junction field effect transistor (JFET) on low earth orbit through the NASA Materials on the International Space Station Experiment 7 (MISSE7). A SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE7 suite to International Space Station via a Shuttle mission and tested on the orbit for eighteen months. A summary of results of tests in both laboratory and space environments will be presented. The future development of alumina based high temperature packaging using co-fired material systems for improved performance at high temperature and more feasible mass production will also be discussed.

Chen, Liang-Yu↗
DOE OSTI2023

Generation and optimization of cross-sections for electron-C 4 F 7 N collisions

Abstract A complete and consistent set of electron-neutral collision cross-sections for the novel insulating gas C 4 F 7 N is reported. The set is composed of a combination of cross-sections previously reported in literature, optimized via a genetic algorithm in conjunction with a multi-term Boltzmann equation solver, and calculatedab initiousing the R-matrix code Quantemol-EC. The finalized set accurately reproduces reported macroscopic rate and transport coefficients as well as Townsend coefficients and critical electric field strengths in C 4 F 7 N and its mixtures with nitrogen, carbon dioxide, and argon.

Physics↗
NASA NTRS2005

500(deg)C electronics for harsh environments

Solid state vacuum devices (SSVDs) are a relatively new class of electronic devices. Innosys is a leading producer of high frequency SSVDs for a number of applications, including RF communications. SSVDs combine features inherent to both solid state and vacuum transistors. Electron transport can be by solid state or vacuum or both. The focus of this talk is on thermionic SSVDs, in which the primary vacuum transport is by thermionically liberated electron emission.

high temperature electronics↗
NASA NTRS2015

High Temperature Pt/Alumina Co-Fired System for 500 C Electronic Packaging Applications

Gold thick-film metallization and 96 alumina substrate based prototype packaging system developed for 500C SiC electronics and sensors is briefly reviewed, the needs of improvement are discussed. A high temperature co-fired alumina material system based packaging system composed of 32-pin chip-level package and printed circuit board is discussed for packaging 500C SiC electronics and sensors.

High temperature↗
NASA NTRS2016

500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

dielectric performance↗
DOE OSTI2022

Magic-Angle Twisted Bilayer Graphene as a Topological Heavy Fermion Problem

Magic-angle (θ=1.05°) twisted bilayer graphene (MATBG) has shown two seemingly contradictory characters: the localization and quantum-dot-like behavior in STM experiments, and delocalization in transport experiments. We construct a model, which naturally captures the two aspects, from the Bistritzer-MacDonald (BM) model in a first principle spirit. A set of local flat-band orbitals (f) centered at the AA-stacking regions are responsible to the localization. A set of extended topological semimetallic conduction bands (c), which are at small energetic separation from the local orbitals, are responsible to the delocalization and transport. The topological flat bands of the BM model appear as a result of the hybridization of f and c electrons. This model then provides a new perspective for the strong correlation physics, which is now described as strongly correlated f electrons coupled to nearly free c electrons—we hence name our model as the topological heavy fermion model. Using this model, we obtain the U(4) and U(4)×U(4) symmetries of Refs. [1–5] as well as the correlated insulator phases and their energies. Simple rules for the ground states and their Chern numbers are derived. Moreover, features such as the large dispersion of the charge ±1 excitations [2,6,7], and the minima of the charge gap at the Γ M point can now, for the first time, be understood both qualitatively and quantitatively in a simple physical picture. Our mapping opens the prospect of using heavy-fermion physics machinery to the superconducting physics of MATBG.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1987

Digital simulation of the SIR-C sensor electronics

In this paper software for simulation of the response of the SIR-C sensor to a point target is described. Synthetic SAR data is generated by passing successive chirps through a simulation of the transmitter electronics, propagation path and receiver electronics. This result is then processed with a digital correlator to yield the point target response of the system. This allows an accurate assessment of the effect of the radar design on the final image product.

Klein, Jeffrey D.↗
NASA NTRS2000

Microwave Mixing and if Bandwidth in Sub-Micron Long High -T(sub c) Hot - Electron Bolometers

The hot-electron bolometer (HEB) mixer made from a high-T(sub c) superconductor (HTS) was introduced recently as a competing alternative to a Schottky mixer. The HEB mixer would require 100-times less LO power and thus would be a desirable candidate for long-term observational missions such as atmospheric remote-sensing and planetary science. The required cooling temperatures between 65 K and 75 K can be achieved with available space-qualified coolers or even with passive radiative coolers.

Harnack, Oliver↗
NASA NTRS2002

Cryogenic Electronics Being Developed for Space Operation

Planetary exploration missions and deep space probes require electrical power management and control systems that can operate efficiently and reliably in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units to maintain the surrounding temperature of the onboard electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures would not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures. Thereby, such electronics would reduce system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results because semiconductor and dielectric materials have better behavior and tolerance in their electrical and thermal properties at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center is focusing on the research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and in deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial off-the-shelf as well as developed components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, dc-dc converters, operational amplifiers, and oscillators are also being investigated for potential use in low-temperature applications. For example, the output response of an advanced oscillator at room temperature and at -190 C is shown. Most oscillators can operate at temperatures down to only -55 C. It can be seen that, for this oscillator, the low temperature of -196 C changed the leading and trailing edges of the oscillator pulses by producing overshoot. The research and development efforts performed under the Low Temperature Electronics Program at Glenn are being carried out through collaboration with other Government agencies, industrial and aerospace companies, and academia. The program supports missions as well as technology development efforts at NASA's Goddard Space Flight Center and Langley Research Center, and the Jet Propulsion Laboratory.

Patterson, Richard L.↗
NASA NTRS2003

Power Electronics Being Developed for Deep Space Cryogenic Applications

Electronic circuits and systems designed for deep space missions need to operate reliably and efficiently in harsh environments that include very low temperatures. Spacecraft that operate in such cold environments carry a large number of heaters so that the ambient temperature for the onboard electronics remains near 20 C. Electronics that can operate at cryogenic temperatures will simplify system design and reduce system size and weight by eliminating the heaters and their associated structures. As a result, system development and launch cost will be reduced. At the NASA Glenn Research Center, an ongoing program is focusing on the development of power electronics geared for deep space low-temperature environments. The research and development efforts include electrical components design, circuit design and construction, and system integration and demonstration at cryogenic temperatures. Investigations are being carried out on circuits and systems that are targeted for use in NASA missions where low temperatures will be encountered: devices such as ceramic and tantalum capacitors, metal film resistors, semiconductor switches, magnetics, and integrated circuits including dc/dc converters, operational amplifiers, voltage references, and motor controllers. Test activities cover a wide range of device and circuit performance under simple as well as complex test conditions, such as multistress and thermal cycling. The effect of low-temperature conditions on the switching characteristics of an advanced silicon-on-insulator field effect transistor is shown. For gate voltages (VGS) below 2.6 V, drain currents at -190 C are lower than drain currents at room temperature (20 C).

Patterson, Richard L.↗
DOE OSTI2019

Simulated projections of boreal forest peatland ecosystem productivity are sensitive to observed seasonality in leaf physiology

We quantified seasonal CO 2 assimilation capacities for seven dominant vascular species in a wet boreal forest peatland then applied data to a land surface model parametrized to the site (ELM-SPRUCE) to test if seasonality in photosynthetic parameters results in differences in simulated plant responses to elevated CO 2 and temperature. We collected seasonal leaf-level gas exchange, nutrient content and stand allometric data from the field-layer community (i.e., Maianthemum trifolium (L.) Sloboda), understory shrubs ( Rhododendron groenlandicum (Oeder) Kron and Judd, Chamaedaphne calyculata (L.) Moench., Kalmia polifolia Wangenh. and Vaccinium angustifolium Alton.) and overstory trees ( Picea mariana (Mill.) B.S.P. and Larix laricina (Du Roi) K. Koch). We found significant interspecific seasonal differences in specific leaf area, nitrogen content (by area; N a ) and photosynthetic parameters (i.e., maximum rates of Rubisco carboxylation (V cmax25°C ), electron transport (J max25°C ) and dark respiration (R d25°C )), but minimal correlation between foliar Na and V cmax25°C , J max25°C or R d25°C , which illustrates that nitrogen alone is not a good correlate for physiological processes such as Rubisco activity that can change seasonally in this system. ELM-SPRUCE was sensitive to the introduction of observed interspecific seasonality in V cmax25°C , J max25°C and R d25°C , leading to simulated enhancement of net primary production (NPP) using seasonally dynamic parameters as compared with use of static parameters. This pattern was particularly pronounced under simulations with higher temperature and elevated CO 2 , suggesting a key hypothesis to address with future empirical or observational studies as climate changes. As a result, inclusion of species-specific seasonal photosynthetic parameters should improve estimates of boreal ecosystem-level NPP, especially if impacts of seasonal physiological ontogeny can be separated from seasonal thermal acclimation.

54 ENVIRONMENTAL SCIENCES↗
NASA NTRS2003

Electronic Components and Circuits for Extreme Temperature Environments

Planetary exploration missions and deep space probes require electrical power management and control systems that are capable of efficient and reliable operation in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures will not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures; thereby reducing system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results from better behavior and tolerance in the electrical and thermal properties of semiconductor and dielectric materials at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial-off-the-shelf as well as developed components that are being characterized include switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being investigated for potential use in low temperature applications. An overview of the NASA Glenn Research Center Low Temperature Electronic Program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained through in-house component and circuit testing will also be discussed. Ongoing research activities that are being performed in collaboration with various organizations will also be presented.

Patterson, Richard L.↗