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Results for “EXCIMER LASERS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Applications of excimer lasers for atmospheric species measurements

Excimer lasers are proven sources of high pulse energy and high average power coherent radiation at several wavelength regions throughout the ultraviolet spectrum. If designed properly, excimer lasers can be operated with both low divergence and narrow spectral bandwidth, and using an oscillator - injection-locked amplifier configuration they can be tuned over a 10 to 20 A bandwidth without appreciable loss in energy. Additional wavelength coverage from excimer lasers can be obtained by stimulated Raman scattering. With the development of magnetic switching for the high voltage, high power switches, the electric discharge excimer laser can also be operated reliably for extended periods of time at high pulse rates. All these features make excimer lasers ideal sources of ultraviolet radiation for a variety of remote and in-situ atmospheric species measurements.

Laudenslager, J. B.↗
NASA NTRS1983

Development of compact excimer lasers for remote sensing

The capabilities of excimer lasers for remote sensing applications are illustrated in a discussion of the development of a compact tunable XeCl excimer laser for the detection of atmospheric OH radicals. Following a brief review of the operating principles and advantages of excimer lasers, measurements of the wavelength dependence of the net small signal gain coefficient of a discharge excited XeCl laser are presented which demonstrate the overlap of several absorption lines of the A-X(0,0) transition of OH near 308 nm with the wavelengths of the XeCl laser. A range of continuous narrow bandwidth tunability of from 307.6 to 308.4 nm with only a 30 percent variation in output is reported for an XeCl laser used as a double-pass amplifier for a frequency-doubled dye laser, and measurements demonstrating the detection of laser-induced fluorescence from OH in a methane-oxygen flame are also noted. The design of an oscillator-amplifier excimer system comprising a corona-preionized, transverse-discharge oscillator and amplifier is then presented. Output energies of 12-15 mJ have been achieved in the regions where injection locking was established, with energies of 8-10 mJ elsewhere.

Laudenslager, J. B.↗
NASA NTRS1993

Excimer laser processing of backside-illuminated CCDS

An excimer laser is used to activate previously implanted dopants on the backside of a backside-illuminated CCD. The controlled ion implantation of the backside and subsequent thin layer heating and recrystallization by the short wavelength pulsed excimer laser simultaneously activates the dopant and anneals out implant damage. This improves the dark current response, repairs defective pixels and improves spectral response. This process heats a very thin layer of the material to high temperatures on a nanosecond time scale while the bulk of the delicate CCD substrate remains at low temperature. Excimer laser processing backside-illuminated CCD's enables salvage and utilization of otherwise nonfunctional components by bringing their dark current response to within an acceptable range. This process is particularly useful for solid state imaging detectors used in commercial, scientific and government applications requiring a wide spectral response and low light level detection.

Russell, S. D.↗
NASA NTRS1985

Pulsed excimer laser processing

The status of pulsed excimer laser processing of PV cells is presented. The cost effective feasibility of fabricating high efficiency solar cells on Czochralski wafers using a pulsed excimer laser for junction formation, surface passivation, and front metallization. Laser annealing results were promising with the best AR coated cell having an efficiency of 16.1%. Better results would be expected with larger laser spot size because there was some degradation in open circuit voltage caused by laser spot overlap and edge effects. Surface heating and photolytic decomposition by the laser was used to deposit tungsten from the reaction of tungsten hexafluoride and hydrogen. The line widths were 5 to 10 mils, and the depositions passed the tape adhesion test. Thinner lines are practical using an optimized optical system.

Wong, D.↗
NASA NTRS1985

Excimer laser annealing for fabrication of low-cost solar cells

Pulsed excimer laser annealing was successfully performed using a 50 w laser. Both polished and texturized cells were tried, however, there are serious problems with nonuniformity on texturized cells. A number of cells were produced and compared to diffusion furnace annealed cells. There was no clear economic advantage in using an excimer laser and there was a small penalty on average efficiency. The conclusion was that the excimer laser anneal process must be able to produce superior cells to be considered as a viable process option.

Spitzer, M. B.↗
NASA NTRS1977

Excimer lasers

The results of a two-year investigation into the possibility of developing continuous wave excimer lasers are reported. The program included the evaluation and selection of candidate molecular systems and discharge pumping techniques. The K Ar/K2 excimer dimer molecules and the xenon fluoride excimer molecule were selected for study; each used a transverse and capillary discharges pumping technique. Experimental and theoretical studies of each of the two discharge techniques applied to each of the two molecular systems are reported. Discharge stability and fluorine consumption were found to be the principle impediments to extending the XeF excimer laser into the continuous wave regime. Potassium vapor handling problems were the principal difficulty in achieving laser action on the K Ar/K2 system. Of the four molecular systems and pumping techniques explored, the capillary discharge pumped K Ar/K2 system appears to be the most likely candidate for demonstrating continuous wave excimer laser action primarily because of its predicted lower pumping threshold and a demonstrated discharge stability advantage.

Palmer, A. J.↗
NASA NTRS1987

Excimer laser annealing: A gold process for CZ silicon junction formation

A cold process using an excimer laser for junction formation in silicon has been evaluated as a way to avoid problems associated with thermal diffusion. Conventional thermal diffusion can cause bulk precipitation of SiOx and SiC or fail to completely activate the dopant, leaving a degenerate layer at the surface. Experiments were conducted to determine the feasibility of fabricating high quality p-n junctions using a pulsed excimer laser for junction formation at remelt temperature with ion-implanted surfaces. Solar-cell efficiency exceeding 16 percent was obtained using Czochralski single-crystal silicon without benefit of back surface field or surface passivation. Characterization shows that the formation of uniform, shallow junctions (approximately 0.25 micron) by excimer laser scanning preserves the minority carrier lifetime that leads to high current collection. However, the process is sensitive to initial surface conditions and handling parameters that drive the cost up.

Wong, David C.↗
DOE OSTI2015

Post-growth annealing of germanium-tin alloys using pulsed excimer laser

We investigate the impact of pulsed excimer laser anneal on fully strained germanium-tin alloys (Ge{sub 1−x}Sn{sub x}) epitaxially grown on Ge substrate by molecular beam epitaxy. Using atomic force microscopy, X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy, the morphological and compositional evolution of Ge{sub 1−x}Sn{sub x} with Sn content up to 17% after annealing using various conditions is studied. Ge{sub 0.83}Sn{sub 0.17} samples annealed at 80 mJ/cm{sup 2} or 150 mJ/cm{sup 2} have no observable changes with respect to the as-grown sample. However, Ge{sub 0.83}Sn{sub 0.17} samples annealed at 250 mJ/cm{sup 2} or 300 mJ/cm{sup 2} have Sn-rich islands on the surface, which is due to Sn segregation in the compressively strained epitaxial film. For Ge{sub 0.89}Sn{sub 0.11}, significant Sn redistribution occurs only when annealed at 300 mJ/cm{sup 2}, indicating that it has better thermal stability than Ge{sub 0.83}Sn{sub 0.17}. A mechanism is proposed to explain the formation of Sn-rich islands and Sn-depleted regions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1989

Excimer laser interaction with dentin of the human tooth

The use an excimer laser produced many unusual conical structures within the dentin of the inner part of the human tooth. By varying the frequency of the laser one can disperse the energy and cause more bleeding in laser surgery, but not destroy the cells associated with the incision. Therefore, the healing process will virtually be without scarring. Whereas, using the infrared laser the blood loss would be less, but the healing process would tend to be longer because cells are being destroyed due to the cauterization effect of the laser. The question is, are these structures produced as an interaction with the laser or are they an intrinsic part of the structure. The effects of the laser interaction upon dentin was studied, and in using electron microscopy the interaction of the excimer laser upon the tooth dentin and other various biological tissue is more clearly understood.

Hammond, Ernest C., Jr.↗
DOE OSTI2016

Excimer laser assisted re-oxidation of BaTiO{sub 3} thin films on Ni metal foils

Excimer laser assisted re-oxidation for reduced, crystallized BaTiO{sub 3} thin films on Ni-foils was investigated. It was found that the BaTiO{sub 3} can be re-oxidized at an oxygen partial pressure of ∼50 mTorr and substrate temperature of 350 °C without forming a NiO{sub x} interface layer between the film and base metal foil. The dielectric permittivity of re-oxidized films was >1000 with loss tangent values <2% at 100 Hz, 30 mV{sub rms} excitation signal. Electron Energy Loss Spectroscopy indicated that BaTiO{sub 3} thin films can be re-oxidized to an oxygen stoichiometry close to ∼3 (e.g., stoichiometric). High resolution cross sectional transmission electron microscopy showed no evidence of NiO{sub x} formation between the BaTiO{sub 3} and the Ni foil upon excimer laser re-oxidation. Spectroscopic ellipsometry studies on laser re-oxidized [001]{sub C} and [111]{sub C} BaTiO{sub 3} single crystals indicate that the re-oxidation of BaTiO{sub 3} single crystals is augmented by photo-excitation of the ozone, as well as laser pulse induced temperature and local stress gradients.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1984

Excimer laser annealing for fabrication of low-cost solar cells

The goal was to determine if a pulsed excimer laser annealing (PELA) is cost effective compared to a baseline process. An excimer laser pulsed annealing apparatus was built. Three hundred solar cells were fabricated. An economic analysis was performed.

Greenwald, A. C.↗
NASA NTRS1992

Raman scattering measurements in flames using a tunable KrF excimer laser

A narrow-band tunable KrF excimer laser is used as a spontaneous vibrational Raman scattering source to demonstrate that single-pulse concentration and temperature measurements, with only minimal fluorescence interference, are possible for all major species (O2, N2, H2O, and H2) at all stoichiometries (fuel-lean to fuel rich) of H2-air flames. Photon-statistics-limited precisions in these instantaneous and spatially resolved single-pulse measurements are typically 5 percent, which are based on the relative standard deviations of single-pulse probability distributions. In addition to the single-pulse N2 Stokes/anti-Stokes ratio temperature measurement technique, a time-averaged temperature measurement technique is presented that matches the N2 Stokes Raman spectrum to theoretical spectra by using a single intermediate state frequency to account for near-resonance enhancement. Raman flame spectra in CH4-air flames are presented that have good signal-to-noise characteristics and show promise for single-pulse UV Raman measurements in hydrocarbon flames.

Wehrmeyer, Joseph A.↗
NASA NTRS1994

Raman-shifting an ArF excimer laser to generate new lines for obtaining optical diagnostic based information in flow fields

The application of tunable excimer lasers in combustion and flow diagnostics is almost routine nowadays. The properties of this laser system that enable density and temperature measurements in supersonic and hypersonic flow fields to be conducted are its high power, high repetition rate, and high spectral brightness. The limitation imposed by this system on these measurements is the paucity of lines in the wavelength region, the vacuum-ultraviolet, where species of interest, such as OH, N2, O2, H2, H2O, CO, NO, etc., are susceptible to electronic excitation to high-lying states. To circumvent this problem one normally resorts to nonlinear optical techniques such as frequency conversion via stimulated Raman scattering (SRS), more commonly known as Raman shifting or Raman mixing, to extend these nonintrusive and nonperturbing techniques to the shorter wavelengths in the VUV region and, for that matter, to longer wavelengths in the infrared region, if the need arises. The theoretical basis of SRS and its application are well documented in the literature. In essence, the Raman shift is a consequence of the inelastic scattering of the incident radiation by the sample. Most of the scattered radiation from the molecules of the sample is unchanged in frequency. However, a small fraction of the incident radiation is changed in frequency. This shift is a result of the fact that some of the incident photons on colliding with the molecules of the sample give up some of their energy and emerge with a lower energy resulting in the lower-frequency Stokes radiation. Other incident photons may increase their energy by colliding with the vibrationally excited molecules of the medium and emerge as higher-frequency antistokes radiation. The generation of the latter is the main objective of this project. The process, however, depends on several factors, including the beam quality of the pump laser, the cross-section of the gaseous medium, the gas pressure, and the ambient temperature of the gas near the focal region. Furthermore, since the Raman shifting process is polarization sensitive, it is necessary to have all of the laser energy in a single polarization. These factors were taken into consideration in the execution of the project. The implementation of the Raman shift was accomplished by focusing the 193 nm output of an ArF excimer laser (Lamda-Physik LPX 150) into a 1-meter long high pressure recirculating Raman cell filled with H2 gas. The laser system was modified in order to improve the mode quality of the pump beam to enhance the Raman shifting. To accomplish this feat, a prism beam expander and grating on the oscillator discharge provided wavelength tuning over the excimer gain profile. Furthermore, a triple-pass configuration, as opposed to unstable resonator optics, was employed in the operation of the amplifier cavity so that when the oscillator output radiation, focused by a 51-cm focal length fused silica lens through a 50 micron pinhole (serving as a spatial filter) and recollimated with a 25-cm focal length lens, was fed into the amplifier, it was injection locked, thereby providing tunable radiation with relatively low divergence. The forward scattered radiation emanating from the impingement of the modified pump beam on the Raman cell was detected using an energy meter after the latter had been separated from it using a dispersing prism.

Koker, Edmond B.↗
NASA NTRS1986

AlGaAs growth by OMCVD using an excimer laser

AlGaAs has been grown on GaAs by laser assisted OMCVD using an excimer laser, wavelength 193 nm, and a Cambridge OMCVD reactor. Films were grown at temperatures of 450 and 500 C with the laser beam parallel to the surface and impinging onto the surface at 15 deg from parallel. The samples were heated by RF coils while the laser beam was perpendicular to the gas flow. Typical gas flow parameters are 12 slm of H2, 15 sccm of Ga(CH3)3, 13 sccm of Al(CH3)3, and a pressure of 250 mbar. The initial energy density of the beam at the surface was 40 mJ/sq cm, the pulse rate was 20 pps, and the growth time was 7 min. The films were analyzed by Auger electron spectroscopy for the aluminum concentration and by TEM for the surface morphology.

Warner, Joseph D.↗
NASA NTRS1984

Excimer laser annealing to fabricate low cost solar cells

The objective is to show whether or not pulsed excimer laser annealing (PELA) of ion-implanted junctions is a cost effective replacement for diffused junctions in fabricating crystalline silicon solar cells. The preliminary economic analysis completed shows that the use of PELA to fabricate both the front junction and back surface field (BSF) would cost approximately 35 cents per peak watt (Wp), compared to a cost of 15 cents/Wp for diffusion, aluminum BSF and an extra cleaning step in the baseline process. The cost advantage of the PELA process depends on improving the average cell efficiency from 14% to 16%, which would lower the overall cost of the module by about 15 cents/Wp. An optimized PELA process compatible with commercial production is to be developed, and increased cell efficiency with sufficient product for adequate statistical analysis demonstrated. An excimer laser annealing station was set-up and made operational. The first experiment used 248 nm radiation to anneal phosphorus implants in polished and texture-etched silicon.

Source record↗
DOE OSTI2017

Laser-driven hydrothermal process studied with excimer laser pulses

Previously, we discovered [Mariella et al., J. Appl. Phys. 114, 014904 (2013)] that modest-fluence/modest-intensity 351-nm laser pulses, with insufficient fluence/intensity to ablate rock, mineral, or concrete samples via surface vaporization, still removed the surface material from water-submerged target samples with confinement of the removed material, and then dispersed at least some of the removed material into the water as a long-lived suspension of nanoparticles. We called this new process, which appears to include the generation of larger colorless particles, “laser-driven hydrothermal processing” (LDHP) [Mariella et al., J. Appl. Phys. 114, 014904 (2013)]. Now, we report that we have studied this process using 248-nm and 193-nm laser light on submerged concrete, quartzite, and obsidian, and, even though light at these wavelengths is more strongly absorbed than at 351 nm, we found that the overall efficiency of LDHP, in terms of the mass of the target removed per Joule of laser-pulse energy, is lower with 248-nm and 193-nm laser pulses than with 351-nm laser pulses. Given that stronger absorption creates higher peak surface temperatures for comparable laser fluence and intensity, it was surprising to observe reduced efficiencies for material removal. We also measured the nascent particle-size distributions that LDHP creates in the submerging water and found that they do not display the long tail towards larger particle sizes that we had observed when there had been a multi-week delay between experiments and the date of measuring the size distributions. This is consistent with transient dissolution of the solid surface, followed by diffusion-limited kinetics of nucleation and growth of particles from the resulting thin layer of supersaturated solution at the sample surface.

36 MATERIALS SCIENCE↗
NASA NTRS1976

Excimer lasers

A theoretical and experimental investigation into the possibility of achieving CW discharge pumped excimer laser oscillation is reported. Detailed theoretical modeling of capillary discharge pumping of the XeF and KXe and K2 excimer systems was carried out which predicted the required discharge parameters for reaching laser threshold on these systems. Capillary discharge pumping of the XeF excimer system was investigated experimentally. The experiments revealed a lower excimer level population density than predicted theoretically by about an order of magnitude. The experiments also revealed a fluorine consumption problem in the discharge in agreement with theory.

Palmer, A. J.↗
NASA NTRS1985

Pulsed excimer laser processing for cost-effective solar cells

The application of excimer laser in the fabrication of photovoltaic devices was investigated extensively. Processes included junction formation, laser assisted chemical vapor deposition metallization, and laser assisted chemical vapor deposition surface passivation. Results demonstrated that implementation of junction formation by laser annealing in production is feasible because of excellent control in junction depth and quality. Both metallization and surface passivation, however, were found impractical to be considered for manufacturing at this stage.

Wong, David C.↗