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Results for “Electron emission”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

On the Ohmic-dominant heating mode of capacitively coupled plasma inverted by boundary electron emission

Electron emission from the boundary is ubiquitous in a capacitively coupled plasma (CCP) and precipitates nonnegligible influence on the discharge properties. Here, we present Particle-in-Cell/Monte Carlo Collision simulation of an Ohmic-dominant heating mode of the capacitively coupled plasma, where the stochastic heating vanishes and only Ohmic heating sustains the discharge due to sheath inversion by boundary electron emission. The inverted CCP features negative sheath potential without Bohm presheath, hence excluding plasma heating due to sheath edge oscillation. The particle and energy transport of the proposed heating mode is analyzed. The influence of boundary electron emission flux, source voltage, and neutral pressure on the transition between classic and Ohmic-dominant CCP heating modes is shown with designated simulation scans. Further, a modified inverse sheath–plasma coupling due to excessive ionization is discovered. In the end, key indicators of the proposed heating mode in plasma diagnostics are provided for future experimental verifications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy

Here, we report on the investigation of an electrically biased high efficiency green III-nitride light-emitting diode (LED) by electron emission microscopy (EEM) using a low-energy electron microscope (LEEM). The surface of the LED was activated to negative electron affinity via deposition of a submonolayer of Cs. With the illumination column of the LEEM turned off, upon electrical injection of the LED, we directly image the hot electrons generated by eeh Auger-Meitner nonradiative processes that diffuse through the top p-Ga N layer and emit out the surface of the biased LED. By determining the source of emitted electrons using complementary electron emission spectroscopy measurements, EEM allows us to effectively map the carrier density within the LED. Using EEM, we observed nonelectron emitting regions with a density of approximately 3 × 10 8 cm -2 , identified as V-shaped defects (V-defects). This is confirmed through the corresponding dark spots of panchromatic cathodoluminescence measurements of the same sample and by plan-view transmission electron microscopy. The absence of electron emission at the sidewall of the V-defects can be attributed to several factors, including reduced carrier density in the sidewall quantum wells due to carriers traveling fast through the semipolar sidewalls before being injected into the planar quantum wells, the reduced population of hot electrons surviving diffusion through the thicker p-GaN filling in the V-defect before emission onto vacuum, and a smaller Auger-Meitner coefficient for the low In content semipolar sidewall quantum wells. The stronger electron emission observed at the ridges of most V-defects compared to the planar quantum well regions indicates larger local injected carrier densities, confirming that V-defect sidewalls allow for strong lateral carrier injection when compared to the weaker vertical injection away from the V-defect as evidenced by the weaker electron emission intensity away from the V-defects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Detection of hot electrons originating from an upper valley at ∼1.7eV above the Γ valley in wurtzite GaN using electron emission spectroscopy

Using electron emission spectroscopy, measurement and analysis were conducted on the energy distribution of vacuum emitted electrons from electrically driven InGaN/GaN green (peak wavelengths 𝜆 ≈ 515nm) light-emitting diodes (LEDs) with and without a prewell superlattice (SL). Here, we report on the detection of a high-energy upper valley at ∼ 1.7eV above the Γ valley from samples with no prewell SL. We propose that these upper valley electrons originate predominantly from trap-assisted Auger recombination (TAAR) in green LEDs, as the intensity of these peaks is found to have quadratic dependence on the carrier density 𝑛 [see Espenlaub et al., J. Appl. Phys. 126, 184502 (2019)]. The high-energy upper valley peak was not observed in the sample with a prewell SL which is attributed to gettering by the prewell SL of still unidentified impurities that act as TAAR centers.

carrier generation & recombination↗
NASA NTRS1966

Secondary electron emission

Secondary electron emission from porous tungsten surfaces to determine mechanisms of beam enhancement in ion rocket thrust augmentor

ION BEAM↗
DOE OSTI2021

FEbeam: Cavity and electron emission data conversion, processing, and analysis. A freeware toolkit for rf injectors

FEbeam is an all-in-one field emission data processing interface with the capability to analyze the field emission cathode performance in an rf injector by extracting the field enhancement factor, local field, and effective emission area from the Fowler–Nordheim equations. It also has the capability of processing beam imaging micrographs using its sister software, FEpic. Furthermore, the current version of FEbeam was designed for the Argonne Cathode Test-stand of the Argonne Wakefield Accelerator facility switch yard. With slight modifications, FEbeam could work for many rf field emission injectors. This software is open-source and can be found at GitHub.

43 PARTICLE ACCELERATORS↗
NASA NTRS2005

Instrumentation and Measurements for Electron Emission from Charged Insulators

The electron was first discovered in 1898 by Sir John Joseph Thomson and has since been the subject of detailed study by nearly every scientific discipline. At nearly the same time Heinrich Rudolf Hertz conducted a series of experiments using cathode tubes, high potentials and ultraviolet light. When applying a large potential to a cathode he found that an arching event across the metal plates would occur. In addition, when shining an ultraviolet light on the metal he found that less potential was required to induce the spark. This result, taken together with other electrical phenomena brought about by the shining of light upon metal and was eventually termed the photoelectric effect. The work of Thomson and Hertz represent the beginning of electron emission studies and a body of ideas that pervade nearly all aspects of physics. In particular these ideas tell us a great deal about the nature of physical interactions within solids. In this thesis we will focus on the emission of electrons induced by an incident electron source over a range of energies, in which one can observe changes in emitted electron flux and energy distribution. In particular, when energetic particles impinge on a solid they can impart their energy, exciting electrons within the material. If this energy is sufficient to overcome surface energy barriers such as the work function, electron affinity or surface charge potential, electrons can escape from the material. The extent of electron emission from the material can be quantified as the ratio of incident particle flux to emitted particle flux, and is termed the electron yield.

Sim, Alec M.↗
NASA NTRS1981

Modification of spacecraft potentials by thermal electron emission on ATS-5

Electron emission experiments on Applied Technology Satellite 5 using a thermal electron emitter are reported and analyzed. Operations in eclipse charging environments showed that electron emission could partially discharge a negatively charged satellite. Typical operations resulted in kilovolt potentials being reduced to hundreds of volts for a few tens of seconds, followed by a gradual recharging over a period of minutes. Equilibrium currents were modeled with a one-dimensional current balance model. Currents on the order of 1 microampere were found, significantly below emitter capabilities. Application of a three-dimensional, time-dependent computer model showed that differential charging on the solar arrays was limiting the emitted current, preventing the complete discharge of the satellite, and allowing it to recharge in spite of the electron emitter.

Olsen, R. C.↗
DOE OSTI2023

Measurement of minority carrier diffusion length in p -GaN using electron emission spectroscopy (EES)

Electron emission spectroscopy was performed on metalorganic chemical vapor deposition grown p-n – -n + junctions with p-thicknesses ranging from 50 to 300 nm, doped with [Mg] = 3.5 × 10 19 cm –3 . By measuring the decreasing emitted electron intensity from a cesiated p-GaN surface with increasing p-thickness, we were able to extract the minority carrier diffusion length of electron in p-type GaN, L e = 26 ± 3 nm. The measured value is in good agreement with literature reported values. In conclusion, the extrapolated electron current at the n – region–p-GaN interface is in reasonable agreement with the simulated electron current at the interface.

36 MATERIALS SCIENCE↗
NASA NTRS1994

Improvements In Optically Stimulated Electron Emission

Optically stimulated electron emission (OSEE) used in inspection for contamination of critical bonding surfaces in solid rocket motors of Space Shuttle prior to formation of adhesive bonds on surfaces during manufacture and refurbishment. Fundamental OSEE inspection technique described in "Surface-Contamination Inspection Tool for Field Use" (MFS-25581) and "Detecting Contamination With Photoelectron Emission" (MFS-25619). OSEE measurement head easily portable, and measurement operation convenient and rapid, making it useful inspection technique in industrial environment. Reveals contamination in many situations in which other techniques do not work.

Yost, William T.↗
NASA NTRS1985

Textured carbon on copper: A novel surface with extremely low secondary electron emission characteristics

Experimentally determined values of true secondary electron emission and relative values of reflected primary electron yield for a range of primary electron beam energies and beam impingement angles are presented for a series of novel textured carbon surfaces on copper substrates. (All copper surfaces used in this study were oxygen-free, high-conductivity grade). The purpose of this investigation is to provide information necessary to develop high-efficiency multistage depressed collectors (MDC's) for microwave amplifier traveling-wave tubes (TWT's) for communications and aircraft applications. To attain the highest TWT signal quality and overall efficiency, the MDC electrode surface must have low secondary electron emission characteristics. While copper is the material most commonly used for MDC electrodes, it exhibits relatively high levels of secondary electron emission unless its surface is treated for emission control. The textured carbon surface on copper substrate described in this report is a particularly promising candidate for the MDC electrode application. Samples of textured carbon surfaces on copper substrates typical of three different levels of treatment are prepared and tested for this study. The materials are tested at primary electron beam energies of 200 to 2000 eV and at direct (0 deg) to near-grazing (85 deg) beam impingement angles. True secondary electron emission and relative reflected primary electron yield characteristics of the textured surfaces are compared with each other and with those of untreated copper. All the textured carbon surfaces on copper substrate tested exhibited sharply lower secondary electron emission characteristics than those of an untreated copper surface.

Curren, A. N.↗
NASA NTRS1998

Fine Structure in the Secondary Electron Emission Peak for Diamond Crystal with (100) Negative Electron Affinity Surface

A fine structure was discovered in the low-energy peak of the secondary electron emission spectra of the diamond surface with negative electron affinity. We studied this structure for the (100) surface of the natural type-IIb diamond crystal. We have found that the low-energy peak consists of a total of four maxima. The relative energy positions of three of them could be related to the electron energy minima near the bottom of the conduction band. The fourth peak, having the lowest energy, was attributed to the breakup of the bulk exciton at the surface during the process of secondary electron emission.

Asnin, V. M.↗
DOE OSTI2020

Electron emission from particles strongly affects the electron energy distribution in dusty plasmas

The electron energy distribution of a low-temperature dusty plasma has been measured via a Langmuir probe. An unexpected broad peak at energy in the 2–4 V range has been observed. This can be theoretically reproduced for a sufficiently large electron emission rate from the nanoparticles dispersed in the plasma. A careful analysis of the nanoparticle energy balance, using measured values of nanoparticle concentration and plasma density, confirms that particles are sufficiently hot under the conditions of this study to rapidly inject electrons into the plasma via field-assisted thermionic emission. This work suggests that the presence of dust affects the plasma ionization balance more deeply than previously thought.

36 MATERIALS SCIENCE↗
NASA NTRS1992

Probing hot-carrier transport and elastic scattering using ballistic-electron-emission microscopy

Ballistic-electron-emission microscopy (BEEM) has been used to characterize electron transport and scattering in metal/semiconductor structures. A SiO2 layer at the Au/Si interface was patterned to form transmitting and nontransmitting regions. By analyzing the BEEM current profiles at the boundaries of these regions, information on the spatial distribution of electrons after transport through the Au layer can be derived. A detailed comparison is made between the results presented here and models which involve modification of the electron distribution by scattering.

Milliken, A. M.↗
DOE OSTI2021

Identification of Auger mechanisms responsible for low energy electron emission from graphene on copper using Auger-gamma coincidence spectroscopy

We have applied positron annihilation induced Auger-gamma coincidence spectroscopy to identify important mechanisms responsible for the emission of low energy electrons following the sudden creation of holes in bilayer graphene on copper substrate. The novel surface spectroscopic method measures the energy of the Doppler shifted annihilation gamma photon in coincidence with the Auger electron emitted following the relaxation of the hole created by the annihilation of a surface electron with a surface trapped positron. By extracting and theoretically modelling the annihilation gamma spectra coincident with low energy electrons, we associate majority of the intensity in the low energy (7 eV–25 eV) region of the Auger spectrum to electron emission following Auger decays of 2s holes in adsorbed oxygen and deep valence holes in graphene. We provide additional support to this conclusion by showing that most of the Auger electrons with energy less than ~ 25 eV are coincident with gamma photons with small Doppler shift (511 keV–512 keV) indicating that the primary electron whose annihilation resulted in low energy Auger electron emission had small momentum parallel to the gamma emission direction. On the other hand, majority of the Auger electrons measured in coincidence with the photons having maximum Doppler shift (515 keV–521 keV) were emitted following the decay of core holes (C 1s and O 1s). Furthermore, by selecting annihilation gamma photons coincident only with the O KVV (from surface adsorbed oxygen), C KVV (graphene), and Cu MVV (copper substrate) Auger electrons, we have also experimentally derived the energy spectrum of Doppler shifted gamma photons resulting from the annihilation of positrons with 1s electrons of O, 1s electrons of C and 3p electrons of Cu respectively. Model Doppler broadened gamma spectra produced using ab-initio calculations agree well with the experimentally derived line shapes. This demonstrates the ability of Auger-gamma coincidence method to experimentally resolve the Doppler broadened annihilation gamma spectrum from surfaces into its veiled electronic level constituents which has, heretofore, relied solely on theoretical analysis. Our results also demonstrate that the line shape of the Doppler broadened annihilation gamma peak reflect the chemical composition of the topmost atomic layer and can thus be used to characterize both external and inaccessible surfaces of porous materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗