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At least 19 records

Quantum sensing effect of electron tunneling in DQD/analyte complex

We investigate electron tunneling between quantum dots and molecules to propose a quantum sensor. This sensor consists of double quantum dots (DQD) with energy levels specifically tailored to mirror those of the target analyte. By analyzing the spectral distribution of electron localizations in the DQD system, we can delineate the analyte’s spectrum and deduce its composition by comparing it with a reference sample. To understand electron tunneling dynamics within the DQD/analyte complex, we performed three-dimensional computational modeling applying the effective potential approach to the InAs/GaAs heterostructure. In this modeling, we mimicked the analyte spectrum by utilizing a quantum well characterized by a quasi-discrete spectrum. Our calculations reveal the inherent potential of utilizing this method as a highly sensitive and selective sensor.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Electron Tunneling and X-Ray Photoelectron Spectroscopy Studies of the Superconducting Properties of Nitrogen-Doped Niobium Resonator Cavities

Scanning tunneling microscopy and spectroscopy and X-ray photoelectron spectroscopy (XPS) have been used to investigate the differences between the surface electronic structures and chemical structure of typically prepared and N-doped Nb cutouts from superconducting radio frequency (SRF) cavities. The goal of this work is to get insights into the fundamental physics and materials mechanisms behind the striking decrease of the surface resistance with the radiofrequency magnetic field, which has been observed by many groups on N-doped Nb cavities. In particular, we address the effects of N-doping on the superconducting properties at the surface of SRF cavities. XPS measurements reveal a significantly more oxidized Nb 3d states on the N-doped Nb surfaces which is confirmed by tunneling spectroscopy measurements. Analysis of the tunneling spectra in the framework of a recent model (A. Gurevich and T. Kubo Phys. Rev. B 96, 184515 (2017)) shows that the N-doping greatly reduces local distribution of superconducting properties on the surface, causes a significant shrinkage of the metallic suboxide and changes the contact resistance between the metallic suboxide and the bulk niobium toward an optimum value, resulting in a lower surface resistance. Combination of these factors enables one to effectively tune the density of states at the surface and to reveal the decrease of the surface resistance with the radio frequency field which follows from the BCS theory. A slightly reduced average gap and a smaller coherence length, revealed by tunneling spectroscopy in the vortex cores, have been found in the N-doped Nb samples compared to typically prepared Nb samples, indicating a stronger impurity scattering caused by nitrogen doping in a moderately disordered material.

Lechner, Eric M.↗

Tri-molybdenum phosphide (Mo 3 P) and multi-walled carbon nanotube junctions for volatile organic compounds (VOCs) detection

Detection and analysis of volatile organic compounds' (VOCs) biomarkers lead to improvement in healthcare diagnosis and other applications such as chemical threat detection and food quality control. Here, we report on tri-molybdenum phosphide (Mo3P) and multiwalled carbon nanotube (MWCNT) junction-based vapor quantum resistive sensors (vQRSs), which exhibit more than one order of magnitude higher sensitivity and superior selectivity for biomarkers in comparison to pristine MWCNT junctions based vQRSs. Transmission electron microscope/scanning tunneling electron microscope with energy dispersive x-ray spectroscopy, x-ray diffraction, and x-ray photoelectron spectroscopy studies reveal the crystallinity and the presence of Mo and P elements in the network. The presence of Mo3P clearly enhanced the performance of vQRS as evidenced in sensitivity and selectivity studies. The vQRSs are stable over extended periods of time and are reproducible, making them a potential candidate for sensing related applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Revealing a 3D Fermi Surface Pocket and Electron-Hole Tunneling in UTe 2 with Quantum Oscillations

Spin triplet superconductor UTe 2 is widely believed to host a quasi-two-dimensional Fermi surface, revealed by first-principles calculations, photoemission and quantum oscillation measurements. An outstanding question still remains as to the existence of a three-dimensional Fermi surface pocket, which is crucial for our understanding of the exotic superconducting and topological properties of UTe 2 . This 3D Fermi surface pocket appears in various theoretical models with different physics origins, but has not been unambiguously detected in experiment. Here, in this study, for the first time we provide concrete evidence for a relatively isotropic, small Fermi surface pocket of UTe 2 via quantum oscillation measurements. In addition, we observed high frequency quantum oscillations corresponding to electron-hole tunneling between adjacent electron and hole pockets. The coexistence of 2D and 3D Fermi surface pockets, as well as the breakdown orbits, provides a test bed for theoretical models and aid the realization of a unified understanding of superconducting state of UTe 2 from the first-principles approach.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Hypothetical Efficiency of Electrical to Mechanical Energy Transfer during Individual Stochastic Molecular Switching Events

There are now many examples of single molecule rotors, motors and switches in the literature that, when driven by photons, electrons or chemical reactions, exhibit well defined motions. As a step towards using these single molecule devices to perform useful functions one must understand how they interact with their environment and quantify their ability to perform work on it. Using a single molecule rotary switch we examine the transfer of electrical energy, delivered via electron tunneling, to mechanical motion and measure the forces the switch experiences with a non-contact q-plus atomic force microscope. Action spectra reveal that the molecular switch has two stable states and can be excited resonantly between them at a bias of 100 mV via a one-electron inelastic tunneling process which corresponds to an energy input of 16 zepto Joules. Furthermore, while the electrically induced switching events are stochastic and no net work is to done on the cantilever, by measuring the forces between the molecular switch and the AFM cantilever we can derive the maximum hypothetical work the switch could perform during a single switching event which is ~55 meV, equal to 8.9 zepto Joules which translates to a hypothetical efficiency ~55% per individual inelastic tunneling electron induced switching event. When co considering the total electrical energy input this drops to 1x10 -7 % due to elastic tunneling events that dominate the tunneling current. However, this approach constitutes a general method for quantifying and comparing the energy input and output of molecularmechanical devices.

36 MATERIALS SCIENCE↗

Resurgence of Electron Quantum Tunneling Sensors

Quantum tunneling sensors are typically ultra-sensitive devices that have been specifically designed to convert a stimulus into an electronic signal using the wondrous principles of quantum mechanical tunneling. In the early 1990s, William Kaiser developed one of the first micromachined quantum tunneling sensors as part of his work with the NASA Jet Propulsion Laboratory. Since then, there have been scattered attempts at utilizing this phenomenon for the development of a variety of physical and chemical sensors. Although these devices demonstrate unique characteristics, such as high sensitivity, the principle of quantum tunneling often acts as a double-edged sword and is responsible for certain drawbacks of this sensor family. In this review, we briefly explain the underlying working principles of quantum tunneling and how they are used to design miniaturized quantum tunneling sensors. We then proceed to describe an overview of the various attempts at developing such sensors. Next, we discuss their current necessity and recent resurgence. Finally, we describe various advantages and shortcomings of these sensors and end this review with an insight into the potential of this technology and prospects.

Banerjee, Aishwaryadev↗

A numerical evaluation of the ambient air temperature in the Electron-Ion Collider tunnel

The Electron-Ion Collider (EIC) is a next-generation collider-accelerator that may require consistent operating temperature conditions for the beams within the accelerator tunnels to maintain stable operation. Variations in ambient temperature within the tunnel can cause thermal expansion of beampipe and component supports and can negatively affect the tunnel equipment, impacting the stability of the beamline. Modifications will be made to the Relativistic Heavy Ion Collider (RHIC) at Brookhaven National Laboratory (BNL) to create the EIC, which necessitates a temperature model that addresses these modifications. To approach this problem, the consistency of temperature changes in different tunnel sections was first evaluated by plotting RHIC tunnel temperature data at various times of the day and year. From this data, a tunnel section was selected and a 2D temperature model was created for RHIC, EIC, and EIC with added cooling configurations. Soil temperature data was analyzed to determine the maximum, average, and mode soil temperatures, which were used as boundary conditions in different temperature scenarios. Computational fluid dynamics modeling was used to create 2D temperature profiles for the configurations. From this model, the predicted temperatures indicate that further analysis is required to validate the boundary conditions and benchmark the current conditions to allow the prediction of the tunnel ambient conditions at EIC. This research can be used as a preliminary model to create an EIC tunnel cooling system that will increase the operational stability of the EIC. As a result of my work this summer, I have become familiar with computational fluid dynamics, including creating fluid dynamic simulations using ANSYS Fluent and related software. I have also learned about the project process required for planning large-scale engineering projects.

43 PARTICLE ACCELERATORS↗

All-electron molecular tunnel ionization based on the weak-field asymptotic theory in the integral representation

Tunnel ionization (TI) underlies many important ultrafast processes, such as high-harmonic generation andstrong-field ionization. Among the existing theories for TI, many-electron weak-field asymptotic theory (ME-WFAT) is by design capable of accurately treating many-electron effects in TI. An earlier version of ME-WFATrelied on an accurate representation of the asymptotic tail of the orbitals, which hindered its implementation inGaussian-basis-set-based quantum chemistry programs. In this work, we reformulate ME-WFAT in the integralrepresentation, which makes the quality of the asymptotic tail much less critical, hence greatly facilitating itsimplementation in standard quantum chemistry packages. The integral reformulation introduced here is thereforemuch more robust when applied to molecules with arbitrary geometry. Here, we present several case studies, amongwhich is the CO molecule where some earlier theories disagree with experiments. Here we find that ME-WFATproduces the largest ionization probability when the field points from C to O, as experiments suggest. Anattractive feature of ME-WFAT is that it can be used with various types of multielectron methods whether ofdensity functional or multiconfiguration types, this inturn facilitates tunnel ionization calculation in systems exhibiting a strong multireference character.

74 ATOMIC AND MOLECULAR PHYSICS↗

Anodic Dissolution Rates Accelerate with Decreasing MoS 2 Nanoflake Thickness

Electrochemical gating of 2D transition metal dichalcogenide (TMD) electrodes is an emerging frontier in the field of semiconductor electrochemistry. In this approach, an applied bias modifies the charge carrier concentration of the 2D TMD, causing band edge shifts and drastic changes in charge transfer rates. However, leveraging this effect for (photo)electrocatalysis is practically limited by the stability of the TMD material under gating conditions. Gerischer showed anodic dissolution of bulk TMD electrodes can occur in the dark and hypothesized that the reaction proceeds via an electron tunneling mechanism from surface states to the TMD conduction band [H. Gerischer, D. Ross, and M. Lubke, Z. Physickalische Chem., 139, 1 (1984)]. Here we investigate this possibility in single MoS 2 nanoflakes using in situ optical microscopy and explore whether Gerischer’s electron tunneling mechanism can explain anodic dissolution rates of thin 2D semiconductors. Here, spatially resolved measurements show anodic dissolution initiates at perimeter edge sites and accelerates exponentially with decreasing layer thickness, consistent with Gerischer’s tunneling mechanism. Interestingly, single layer MoS 2 is impervious to anodic dissolution at applied potentials >200 mV more positive than those required to drive dissolution in bulk and multilayer-thick nanoflakes.

2D semiconductor↗

Molecular bridge-mediated ultralow-power gas sensing

Abstract We report the electrical detection of captured gases through measurement of the quantum tunneling characteristics of gas-mediated molecular junctions formed across nanogaps. The gas-sensing nanogap device consists of a pair of vertically stacked gold electrodes separated by an insulating 6 nm spacer (~1.5 nm of sputtered α-Si and ~4.5 nm ALD SiO 2 ), which is notched ~10 nm into the stack between the gold electrodes. The exposed gold surface is functionalized with a self-assembled monolayer (SAM) of conjugated thiol linker molecules. When the device is exposed to a target gas (1,5-diaminopentane), the SAM layer electrostatically captures the target gas molecules, forming a molecular bridge across the nanogap. The gas capture lowers the barrier potential for electron tunneling across the notched edge region, from ~5 eV to ~0.9 eV and establishes additional conducting paths for charge transport between the gold electrodes, leading to a substantial decrease in junction resistance. We demonstrated an output resistance change of >10 8 times upon exposure to 80 ppm diamine target gas as well as ultralow standby power consumption of <15 pW, confirming electron tunneling through molecular bridges for ultralow-power gas sensing.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Two-Dimensional Molecular Charge Density Waves in Single-Layer-Thick Islands of a Dirac Fermion System

Charge density waves have been intensely studied in inorganic materials such as transition metal dichalcogenides however its counterpart in organic materials has yet to be explored in detail. Here we report the finding of a robust two dimensional charge density waves in molecular layers formed by α-(BEDT-TTF) 2 -I 3 on a Ag(111) surface. Low temperature scanning tunnelling microscopy images of a multi-layer thick α-(BEDT-TTF) 2 -I 3 on Ag(111) substrate reveal coexistence of 5a0 x 5a0 and √31 a0 x √31 a0 R9° charge density wave patterns commensurate with the underlying molecular lattice at 80 K. Both charge density wave patterns remain in nano-size molecular islands with just a single constituent molecular-layer thickness at 80 K and 5 K. Local tunneling spectroscopy measurements reveal the variation of the gap from 244 meV to 288 meV between the maximum and minimum charge density wave locations. Density functional theory calculations further confirm a vertical positioning of BEDT-TTF molecules in the molecular layer. While the observed charge density wave patterns are stable for the defect sites, they can be reversely switched for one molecular lattice site by means of inelastic tunnelling electron energy transfer with the electron energies exceeding 400 meV using a scanning tunneling microscope manipulation scheme.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Long-distance coherence of Majorana wires

Theoretically, a pair of Majorana bound states in a topological superconductor forms a single fermionic level even at large separations, implying that the parity information is stored nonlocally. The nonlocality leads to a long-distance coherence for electrons tunneling through a Coulomb-blockaded Majorana wire, an effect that can be observed, e.g., in an interferometer. Here, we examine theoretically the coherent electron transfer, taking into account that tunneling implies the long-distance transfer of charge, which is carried by one-dimensional plasmons. In this work, we show that the charge dynamics does not affect the coherence of the electron tunneling process in a topological superconductor consisting of a semiconductor wire proximitized by a single bulk superconductor. The coherence may be strongly suppressed, however, if the topological superconductivity derives from a semiconductor wire proximitized by a granular superconductor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Attractive Su-Schrieffer-Heeger-Hubbard model on a square lattice away from half-filling

The Su-Schrieffer-Heeger (SSH) model, with bond phonons modulating electron tunneling, is a paradigmatic electron-phonon model that hosts an antiferromagnetic order to bond order transition at half-filling. In the presence of a repulsive Hubbard interaction, the antiferromagnetic phase is enhanced, but the phase transition remains first order. Here, we explore the physics of the SSH model with an attractive Hubbard interaction, which hosts an interesting interplay among charge order, s-wave pairing, and bond order. Using the numerically exact determinant quantum Monte Carlo method, we show that both charge order, present at weak electron-phonon coupling, and bond order, at large coupling, give way to s-wave pairing when the system is doped. Lastly, we demonstrate that the SSH electron-phonon interaction competes with the attractive Hubbard interaction and reduces the s-wave pairing correlation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Keldysh tuning of photoluminescence in a lead halide perovskite crystal

In 1964, Keldysh laid the groundwork for strong-field physics in atomic, molecular, and solid-state systems by delineating a ubiquitous transition from multiphoton absorption to quantum electron tunneling under intense AC driving forces. While both processes in semiconductors can generate carriers and result in photon emission through electron-hole recombination, the low quantum yields in most materials have hindered direct observation of the Keldysh crossover. Leveraging the large quantum yields of photoluminescence in lead halide perovskites, we show that we can not only induce bright light emission from extreme sub-bandgap light excitation but also distinguish between photon-induced and electric-field-induced processes. Our results are rationalized by the Landau-Dykhne formalism, providing insights into the non-equilibrium dynamics of strong-field light-matter interactions. These findings open new avenues for light upconversion and sub-bandgap photon detection, highlighting the potential of lead halide perovskites in advanced optoelectronic applications.

FOS: Physical sciences↗

Tunnel ionization within a one-dimensional, undriven plasma sheath

In high density, high temperature plasmas, the plasma sheath that develops can result in extremely high electric fields, on the order of tens to hundreds of V/nm. Under the right conditions, these electric fields can reach magnitudes that can increase the probability of electron tunneling ionization to occur, resulting in one or more electron-ion pairs. The presence of tunneling ionization can then modify the development of the plasma sheath, as well as properties such as the ion and electron densities and plasma potential. The tunnel ionization process for hydrogen atoms is demonstrated, in this work, as implemented in a Sandia National Laboratories, particle-in-cell code Aleph. Results are presented for the application of the tunnel ionization process to a one-dimensional, undriven plasma sheath. Additional results for cases that consider warm ions and neutrals, the inclusion of electron–neutral collisions, and the injection of neutral particles, as well as the application to various plasma devices, will be discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗