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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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CyberGAN: Generating High-fidelity Cybersecurity Data With Generative Adversarial Networks

Machine learning for cyber defense offers the promise of detecting adversarial activity against the ground data systems managing critical space assets. A fundamental challenge facing machine learning research in cybersecurity is the lack of high-fidelity, shareable datasets for robust evaluation and testing of machine learning-based solutions. High-fidelity, real-world datasets are necessary for reliable benchmarking of nominal system behavior and malicious activity. Unfortunately, such realistic datasets of both nominal and adversarial activity are rarely shared publicly by data owners due to security and privacy concerns. Besides, the available adversarial data is sparse, which makes training models on malicious activity much harder. This situation has impeded and continues to impede the research and successful adoption of machine learning methods for cyber defense. Researchers have dealt with this problem by generating data within a low-fidelity lab environment, using classified and thus unshareable datasets, or downloading low-fidelity public datasets made available by others. We propose an innovative solution to the problem by employing machine learning methods to generate high-fidelity data. Specifically, we propose the use of Generative Adversarial Networks (GANs) to generate high-fidelity data for cybersecurity purposes. GANs have found successful image processing and natural language applications, but have not yet been investigated for cyber data generation. Our proposed approach first involves training the `discriminator' network of the GAN with a sample of real-world data consisting of malicious and nominal samples. We then use the `generator' network to generate new high-fidelity data samples consisting of an appropriate mix of malicious and nominal activity. We demonstrate applications of our architecture by generating high-fidelity cybersecurity data containing both malicious and nominal samples. We thoroughly evaluate the fidelity of our generated data using heuristics and evaluate its usefulness for machine learning applications using three different datasets. Overall, our approach results in high-fidelity, shareable datasets.

Zhang, Yuening↗

Generative Framework Approach to Match Landsat and Sentinel-2 Data

Linear regression and histogram matching based techniques have been widely used to minimize the surface reflectance difference between two similar satellite observations such as Landsat-8/9 and Sentinel-2A/B products [1]. However, regionally or globally derived conversion factors may not be suitable for all land cover types and locations, resulting in noticeable residual differences between the sensors. Generative Adversarial Network (GAN) has shown promise in the field of image processing for domain or style transfer[2]. In this work we aim to minimize the surface reflectance difference between Landsat and Sentinel-2 products based on GAN.

Sujit Roy↗

Improving Sim-to-Real Transfer in Vision-Based Robot Navigation Via Instance-Level GAN-Based Data Augmentation

Achieving robust vision-based robotic tasks requires large amounts of data, which are often difficult to obtain in real-world scenarios. Simulators and synthetic data offer a cost-effective alternative, but the visual gap between simulation and reality hinders the performance of models when deployed in real-world environments. In this paper, we present a data augmentation pipeline that integrates a foundation model (Segment Anything Model) with an unsupervised image-to-image translation model (CycleGAN) for instance-level domain transfer from simulation to reality. This pipeline enables the generation of realistic labeled data from synthetic images for training supervised machine learning models in vision-based navigation tasks. We evaluate our approach on real-world data for ego-vehicle pose estimation, a critical autonomous navigation task involving the prediction of cross-track position and heading angle relative to road center line markings. The results of our tests show that our GAN-based data augmentation pipeline significantly outperforms models trained solely on simulation data or on data processed with standard image augmentation methods for sim-to-real transfer, enhancing model robustness and generalizability in real-world scenarios. Our method provides a scalable and flexible data augmentation tool for leveraging large synthetic datasets to enhance vision-based robotic navigation tasks.

artificial intelligence↗

Toward the Development of Group III-V Photodetectors and Imaging Arrays

A collaboration between researchers at NASA Goddard Space Flight Center (GSFC) (Code 718.1) and the Johns Hopkins University Applied Physics Laboratory (APL) on the development of gallium nitride (GaN) based photodetectors has been in existence since July 1994. This collaboration, based on APL undertaking the material growth and GSFC undertaking the device processing, has led to discrete GaN photoconductive detectors with superior characteristics to those of similar devices reported in the literature and, more recently, to the development of state-of-the art 256x256 imaging arrays with the pixels indium bump-bonded to a silicon readout circuit (RIOC). The object of this proposal is to continue the collaboration for the period 1998-2002 by outlining a program of work at the APL on the metalorganic chemical vapor deposition (MOCVD) growth of GaN and related materials for UV detector applications. In particular, emphasis will be placed on the optimization of growth on 2 in diameter substrates, on the growth of In(sub x)Ga(1-x)N and Al(sub x)Ga(1-x)N alloy structures to produce devices with a wider range of tailored cut-off wavelengths, and on the growth of pn-junction structures for photovoltaic devices.

Wickenden, Dennis K.↗

Infrared Imaging using Sparse Microresonator Arrays and Compressed Sensing

In this work, we present an uncooled infrared (IR) thermal imager featuring a sparse array of resonant pixels that can be monolithically integrated with the readout electronics for long-term operation in high-temperature environments. Each of the detector pixels is made of an IR-sensitive GaN microresonator developed to be operated at up to 500 0C. The pixels are employed in sparse array configuration to allow for routing the signal carrying traces and to ease the routing from pixel to circuit, as well as to reduce the power consumption at the expense of moderate post-processing time and increased complexity to recover the image. Three 128 by 128 sparse resonator arrays with the array densities of 10%, 25% and 37.5% are designed, and used in conjunction with the Compressed Sensing (CS) method to reconstruct complex test images from highly incomplete data. Capabilities and performance metrics of the recovery technique are explored.

Rais-Zadeh, Mina↗

NASA Tech Briefs, March 2011

Topics covered include: Optimal Tuner Selection for Kalman-Filter-Based Aircraft Engine Performance Estimation; Airborne Radar Interferometric Repeat-Pass Processing; Plug-and-Play Environmental Monitoring Spacecraft Subsystem; Power-Combined GaN Amplifier with 2.28-W Output Power at 87 GHz; Wallops Ship Surveillance System; Source Lines Counter (SLiC) Version 4.0; Guidance, Navigation, and Control Program; Single-Frame Terrain Mapping Software for Robotic Vehicles; Auto Draw from Excel Input Files; Observation Scheduling System; CFDP for Interplanetary Overlay Network; X-Windows Widget for Image Display; Binary-Signal Recovery; Volumetric 3D Display System with Static Screen; MMIC Replacement for Gunn Diode Oscillators; Feature Acquisition with Imbalanced Training Data; Mount Protects Thin-Walled Glass or Ceramic Tubes from Large Thermal and Vibration Loads; Carbon Nanotube-Based Structural Health Monitoring Sensors; Wireless Inductive Power Device Suppresses Blade Vibrations; Safe, Advanced, Adaptable Isolation System Eliminates the Need for Critical Lifts; Anti-Rotation Device Releasable by Insertion of a Tool; A Magnetically Coupled Cryogenic Pump; Single Piezo-Actuator Rotary-Hammering Drill; Fire-Retardant Polymeric Additives; Catalytic Generation of Lift Gases for Balloons; Ionic Liquids to Replace Hydrazine; Variable Emittance Electrochromics Using Ionic Electrolytes and Low Solar Absorptance Coatings; Spacecraft Radiator Freeze Protection Using a Regenerative Heat Exchanger; Multi-Mission Power Analysis Tool; Correction for Self-Heating When Using Thermometers as Heaters in Precision Control Applications; Gravitational Wave Detection with Single-Laser Atom Interferometers; Titanium Alloy Strong Back for IXO Mirror Segments; Improved Ambient Pressure Pyroelectric Ion Source; Multi-Modal Image Registration and Matching for Localization of a Balloon on Titan; Entanglement in Quantum-Classical Hybrid; Algorithm for Autonomous Landing; Quantum-Classical Hybrid for Information Processing; Small-Scale Dissipation in Binary-Species Transitional Mixing Layers; Superpixel-Augmented Endmember Detection for Hyperspectral Images; Coding for Parallel Links to Maximize the Expected Value of Decodable Messages; and Microwave Tissue Soldering for Immediate Wound Closure.

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Time-Domain Terahertz Computed Axial Tomography NDE System

NASA has identified the need for advanced non-destructive evaluation (NDE) methods to characterize aging and durability in aircraft materials to improve the safety of the nation's airline fleet. 3D THz tomography can play a major role in detection and characterization of flaws and degradation in aircraft materials, including Kevlar-based composites and Kevlar and Zylon fabric covers for soft-shell fan containment where aging and durability issues are critical. A prototype computed tomography (CT) time-domain (TD) THz imaging system has been used to generate 3D images of several test objects including a TUFI tile (a thermal protection system tile used on the Space Shuttle and possibly the Orion or similar capsules). This TUFI tile had simulated impact damage that was located and the depth of damage determined. The CT motion control gan try was designed and constructed, and then integrated with a T-Ray 4000 control unit and motion controller to create a complete CT TD-THz imaging system prototype. A data collection software script was developed that takes multiple z-axis slices in sequence and saves the data for batch processing. The data collection software was integrated with the ability to batch process the slice data with the CT TD-THz image reconstruction software. The time required to take a single CT slice was decreased from six minutes to approximately one minute by replacing the 320 ps, 100-Hz waveform acquisition system with an 80 ps, 1,000-Hz waveform acquisition system. The TD-THZ computed tomography system was built from pre-existing commercial off-the-shelf subsystems. A CT motion control gantry was constructed from COTS components that can handle larger samples. The motion control gantry allows inspection of sample sizes of up to approximately one cubic foot (.0.03 cubic meters). The system reduced to practice a CT-TDTHz system incorporating a COTS 80- ps/l-kHz waveform scanner. The incorporation of this scanner in the system allows acquisition of 3D slice data with better signal-to-noise using a COTS scanner rather than the gchirped h scanner. The system also reduced to practice a prototype for commercial CT systems for insulating materials where safety concerns cannot accommodate x-ray. A software script was written to automate the COTS software to collect and process TD-THz CT data.

Zimdars, David↗

NASA Tech Briefs, October 2009

Topics covered include: Light-Driven Polymeric Bimorph Actuators; Guaranteeing Failsafe Operation of Extended-Scene Shack-Hartmann Wavefront Sensor Algorithm; Cloud Water Content Sensor for Sounding Balloons and Small UAVs; Pixelized Device Control Actuators for Large Adaptive Optics; T-Slide Linear Actuators; G4FET Implementations of Some Logic Circuits; Electrically Variable or Programmable Nonvolatile Capacitors; System for Automated Calibration of Vector Modulators; Complementary Paired G4FETs as Voltage-Controlled NDR Device; Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band; Low-Noise MMIC Amplifiers for 120 to 180 GHz; Using Ozone To Clean and Passivate Oxygen-Handling Hardware; Metal Standards for Waveguide Characterization of Materials; Two-Piece Screens for Decontaminating Granular Material; Mercuric Iodide Anticoincidence Shield for Gamma-Ray Spectrometer; Improved Method of Design for Folding Inflatable Shells; Ultra-Large Solar Sail; Cooperative Three-Robot System for Traversing Steep Slopes; Assemblies of Conformal Tanks; Microfluidic Pumps Containing Teflon[Trademark] AF Diaphragms; Transparent Conveyor of Dielectric Liquids or Particles; Multi-Cone Model for Estimating GPS Ionospheric Delays; High-Sensitivity GaN Microchemical Sensors; On the Divergence of the Velocity Vector in Real-Gas Flow; Progress Toward a Compact, Highly Stable Ion Clock; Instruments for Imaging from Far to Near; Reflectors Made from Membranes Stretched Between Beams; Integrated Risk and Knowledge Management Program -- IRKM-P; LDPC Codes with Minimum Distance Proportional to Block Size; Constructing LDPC Codes from Loop-Free Encoding Modules; MMICs with Radial Probe Transitions to Waveguides; Tests of Low-Noise MMIC Amplifier Module at 290 to 340 GHz; and Extending Newtonian Dynamics to Include Stochastic Processes.

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Risk-Based Explosion Assessment Internal Explosion of Exploration Upper Stage in Vehicle Assembly Building

This paper presents risk-based explosion analyses used to determine if an explosion of NASA's Space Launch System (SLS) Exploration Upper Stage (EUS) during fueling in Vehicle Assembly Building (VAB) High Bay 4 can hazard the Space Launch System (SLS) being processed in Bay 3. This paper focuses on blast fragmentation as it was the controlling hazard. An estimate of the amount of Net Explosion Weight (NEW) was used to develop a fragment list (mass, shape, takeoff velocity/angle) given an explosion occurs at ground level in Bay 4. Intervening superstructure that exists between Bay 4 and Bay 3 (that could potentially block EUS fragments) was modeled based on detailed visual images (VISSIM) and AUTOCAD/structural drawings. The fragment list was input to a 3D trajectory application that performs multiple random explosion simulations; each simulation varying fragment ballistic coefficient and takeoff angle/velocity. Individual fragments are tracked until stopped by the intervening superstructure or reach Bay 3, potentially impacting the SLS. The probability of impacting the SLS is then determined from the random simulations; the results are used to help decision-makers determine the efficacy of co-processing within the VAB and decide what mitigations may be appropriate.

Explosion Assessment↗

NASA Tech Briefs, July 2012

Topics covered include: Instrument Suite for Vertical Characterization of the Ionosphere-Thermosphere System; Terahertz Radiation Heterodyne Detector Using Two-Dimensional Electron Gas in a GaN Heterostructure; Pattern Recognition Algorithm for High-Sensitivity Odorant Detection in Unknown Environments; Determining Performance Acceptability of Electrochemical Oxygen Sensors; Versatile Controller for Infrared Lamp and Heater Arrays; High-Speed Scanning Interferometer Using CMOS Image Sensor and FPGA Based on Multifrequency Phase-Tracking Detection; Ultra-Low-Power MEMS Selective Gas Sensors; Compact Receiver Front Ends for Submillimeter-Wave Applications; Dynamically Reconfigurable Systolic Array Accelerator; Blocking Losses With a Photon Counter; Motion-Capture-Enabled Software for Gestural Control of 3D Mod; Orbit Software Suite; CoNNeCT Baseband Processor Module Boot Code SoftWare (BCSW); Trajectory Software With Upper Atmosphere Model; ALSSAT Version 6.0; Employing a Grinding Technology to Assess the Microbial Density for Encapsulated Organisms; Demonstration of Minimally Machined Honeycomb Silicon Carbide Mirrors; Polyimide Aerogel Thin Films; Nanoengineered Thermal Materials Based on Carbon Nanotube Array Composites; Composite Laminate With Coefficient of Thermal Expansion Matching D263 Glass; Robust Tensioned Kevlar Suspension Design; Focal Plane Alignment Utilizing Optical CMM; Purifying, Separating, and Concentrating Cells From a Sample Low in Biomass; Virtual Ultrasound Guidance for Inexperienced Operators; Beat-to-Beat Blood Pressure Monitor; Non-Contact Conductivity Measurement for Automated Sample Processing Systems; An MSK Radar Waveform; Telescope Alignment From Sparsely Sampled Wavefront Measurements Over Pupil Subapertures; Method to Remove Particulate Matter from Dusty Gases at Low Pressures; Terahertz Quantum Cascade Laser With Efficient Coupling and Beam Profile; Measurement Via Optical Near-Nulling and Subaperture Stitching; 885-nm Pumped Ceramic Nd:YAG Master Oscillator Power Amplifier Laser System; Airborne Hyperspectral Imaging System; Heat Shield Employing Cured Thermal Protection Material Blocks Bonded in a Large-Cell Honeycomb Matrix; and Asymmetric Supercapacitor for Long-Duration Power Storage.

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Atomically Flat Surfaces Developed for Improved Semiconductor Devices

New wide bandgap semiconductor materials are being developed to meet the diverse high temperature, -power, and -frequency demands of the aerospace industry. Two of the most promising emerging materials are silicon carbide (SiC) for high-temperature and high power applications and gallium nitride (GaN) for high-frequency and optical (blue-light-emitting diodes and lasers) applications. This past year Glenn scientists implemented a NASA-patented crystal growth process for producing arrays of device-size mesas whose tops are atomically flat (i.e., step-free). It is expected that these mesas can be used for fabricating SiC and GaN devices with major improvements in performance and lifetime. The promising new SiC and GaN devices are fabricated in thin-crystal films (known as epi films) that are grown on commercial single-crystal SiC wafers. At this time, no commercial GaN wafers exist. Crystal defects, known as screw defects and micropipes, that are present in the commercial SiC wafers propagate into the epi films and degrade the performance and lifetime of subsequently fabricated devices. The new technology isolates the screw defects in a small percentage of small device-size mesas on the surface of commercial SiC wafers. This enables atomically flat surfaces to be grown on the remaining defect-free mesas. We believe that the atomically flat mesas can also be used to grow GaN epi films with a much lower defect density than in the GaN epi films currently being grown. Much improved devices are expected from these improved low-defect epi films. Surface-sensitive SiC devices such as Schottky diodes and field effect transistors should benefit from atomically flat substrates. Also, we believe that the atomically flat SiC surface will be an ideal surface on which to fabricate nanoscale sensors and devices. The process for achieving atomically flat surfaces is illustrated. The surface steps present on the "as-received" commercial SiC wafer is also illustrated. because of the small tilt angle between the crystal "basal" plane and the polished wafer surface. These steps are used in normal SiC epi film growth in a process known as stepflow growth to produce material for device fabrication. In the new process, the first step is to etch an array of mesas on the SiC wafer top surface. Then, epi film growth is carried out in the step flow fashion until all steps have grown themselves out of existence on each defect-free mesa. If the size of the mesas is sufficiently small (about 0.1 by 0.1 mm), then only a small percentage of the mesas will contain an undesired screw defect. Mesas with screw defects supply steps during the growth process, allowing a rough surface with unwanted hillocks to form on the mesa. The improvement in SiC epi surface morphology achievable with the new technology is shown. An atomic force microscope image of a typical SiC commercial epilayer surface is also shown. A similar image of an SiC atomically flat epi surface grown in a Glenn laboratory is given. With the current screw defect density of commercial wafers (about 5000 defects/cm2), the yield of atomically free 0.1 by 0.l mm mesas is expected to be about 90 percent. This is large enough for many types of electronic and optical devices. The implementation of this new technology was recently published in Applied Physics Letters. This work was initially carried out in-house under a Director's Discretionary Fund project and is currently being further developed under the Information Technology Base Program.

Powell, J. Anthony↗