GaAs JFETS Intended for Deep Cryogenic VLWIR Readout Electronics
This paper presents the structure and fabrication of GaAs JFETSs and their performance at 4 K.
GaAs JFETS deep cryogenic readout electronics↗
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Advances in Discrete GaAs JFETs and Simple Amplifiers for Deep Cryogenic Readouts
The progress of the Jet Propulsion Laboratory in developing gallium arsenide junction field-effect transistors (GaAs JFETs) for application in infrared readout electronics operating below 10 Kelvin is discussed.
cryogenic readout gallium arsenide junction field-↗
Recent Advances in GaAs JFETs for Deep Cryogenic Focal Plane Readouts
The progress of Jet Propulsion Laboratory in developing gallium arsenide junction field-effect transistors (GaAs JFETs) for application in infrared readout electronics operating below 10 Kelvin is discussed.
GaAs↗