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A gas sensor (100,200) includes at least one sensor device including a surface acoustic wave (SAW) device (110) or a quartz crystal microbalance (QCM) device (210), and a layer of metal organic framework (MOF) material (120,220) disposed on each of the at least one sensor device. The at least one sensor device is structured to sense a change in mass of the MOF material.
A gas sensor includes an in-fiber resonant wavelength device provided in a fiber core at a first location. The fiber propagates a sensing light and a power light. A layer of a material is attached to the fiber at the first location. The material is able to absorb the gas at a temperature dependent gas absorption rate. The power light is used to heat the material and increases the gas absorption rate, thereby increasing sensor performance, especially at low temperatures. Further, a method is described of flash heating the gas sensor to absorb more of the gas, allowing the sensor to cool, thereby locking in the gas content of the sensor material, and taking the difference between the starting and ending resonant wavelengths as an indication of the concentration of the gas in the ambient atmosphere.
A gas sensor enclosure is provided. The gas sensor enclosure includes at least two coaxial shells, a gas sensor, a gas permeable membrane that exposes a portion of the gas sensor to gas exchange through one of the at least two coaxial shells and a screen. The screen encloses the at least two coaxial shells, the gas sensor and the gas permeable membrane.
An integrated multilaser process is developed to fabricate nanocrystalline nanonetwork SnO 2 gas sensors in one integrated procedure, which combines electrodes fabrication, nanomaterials deposition, and postannealing. Interdigit electrodes are fabricated on an Au-coated fused silica substrate using a picosecond (ps) laser, which ablates the Au coating from the back of the substrate to pattern the electrodes. A novel transmitted Ps laser deposition (TPLD) process is designed to deposit SnO 2 nanonetwork on the interdigit electrodes with precise deposition area control under a close target-to-substrate distance. The obtained SnO 2 nanonetwork is in situ postannealed by a CO 2 laser to improve the crystallinity, while the nano morphology and grain size keep intact. To investigate the morphology and formation process of the nanonetwork, the microstructure of the laser-deposited SnO 2 layer is characterized. As a result, the crystallization control of CO 2 laser annealing is investigated through analyzing the Raman spectrum, X-ray diffraction (XRD) patterns, and lattice structures of the samples. By exposed to H 2 atmosphere, the fabricated gas sensor is demonstrated for H 2 monitoring.
Ionization gas sensors are ubiquitous tools that can monitor desired gases or detect abnormalities in real time to protect the environment of living organisms or to maintain clean and/or safe environment in industries. The sensors’ working principle is based on the fingerprinting of the breakdown voltage of one or more target gases using nanostructured materials. Fundamentally, nanomaterial-based ionization-gas sensors operate within a large framework of gas breakdown physics; signifying that an overall understanding of the gas breakdown mechanism is a crucial factor in the technological development of ionization gas sensors. Moreover, many studies have revealed that physical properties of nanomaterials play decisive roles in the gas breakdown physics and the performance of plasma-based gas sensors. Based on this insight, this review provides a comprehensive description of the foundation of both the gas breakdown physics and the nanomaterial-based ionization-gas-sensor technology, as well as introduces research trends on nanomaterial-based ionization gas sensors. The gas breakdown is reviewed, including the classical Townsend discharge theory and modified Paschen curves; and nanomaterial-based-electrodes proposed to improve the performance of ionization gas sensors are introduced. The secondary electron emission at the electrode surface is the key plasma–surface process that affects the performance of ionization gas sensors. Finally, we present our perspectives on possible future directions.
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A gas sensor system includes a sensing tube having an outer surface, and an inner surface defining a passage. A plurality of openings is formed through the outer surface and the inner surface. Each of the plurality of openings being no greater than 0.5 millimeters (mm) in diameter. A hydrophobic sealant layer covers the sensing tube. A protective layer covers the hydrophobic sealant layer. A sensor node is arranged along the sensing tube. The sensor node includes an inlet, an outlet, and an interior chamber arranged between the inlet and the outlet. A sensor element is arranged in the sensor node. The sensor element includes a first end and a second end. A sensor cable extends along the sensing tube. The sensor cable includes a first section connected to the first end of the sensor element and a second section connected to the second end of the sensor element.
Miniaturized hydrogen- and hydrocarbon-gas sensors, heretofore often consisting of Schottky diodes based on catalytic metal in contact with SiC, can be improved by incorporating palladium oxide (PdOx, where 0 less than or equal to x less than or equal to 1) between the catalytic metal and the SiC. In prior such sensors in which the catalytic metal was the alloy PdCr, diffusion and the consequent formation of oxides and silicides of Pd and Cr during operation at high temperature were observed to cause loss of sensitivity. However, it was also observed that any PdOx layers that formed and remained at PdCr/SiC interfaces acted as barriers to diffusion, preventing further deterioration by preventing the subsequent formation of metal silicides. In the present improvement, the lesson learned from these observations is applied by placing PdOx at the catalytic metal/SiC interfaces in a controlled and uniform manner to form stable diffusion barriers that prevent formation of metal silicides. A major advantage of PdOx over other candidate diffusion-barrier materials is that PdOx is a highly stable oxide that can be incorporated into gas sensor structures by use of deposition techniques that are standard in the semiconductor industry. The PdOx layer can be used in a gas sensor structure for improved sensor stability, while maintaining sensitivity. For example, in proof-of-concept experiments, Pt/PdOx/SiC Schottky-diode gas sensors were fabricated and tested. The fabrication process included controlled sputter deposition of PdOx to a thickness of 50 Angstroms on a 400-m-thick SiC substrate, followed by deposition of Pt to a thickness of 450 Angstroms on the PdOx. The SiC substrate (400 microns in thickness) was patterned with photoresist and a Schottky-diode photomask. A lift-off process completed the definition of the Schottky-diode pattern. The sensors were tested by measuring changes in forward currents at a bias potential of 1 V during exposure to H2 in N2 at temperatures ranging from 450 to 600 C for more than 750 hours. The sensors were found to be stable after a break-in time of nearly 200 hours. The sensors exhibited high sensitivity: sensor currents changed by factors ranging from 300 to 800 when the gas was changed from pure N2 to 0.5 percent H2 in N2.
Silicon carbide (SiC) based gas sensors have significant potential to address the gas sensing needs of aerospace applications such as emission monitoring, fuel leak detection, and fire detection. However, in order to reach that potential, a range of technical challenges must be overcome. These challenges go beyond the development of the basic sensor itself and include the need for viable enabling technologies to make a complete gas sensor system: electrical contacts, packaging, and transfer of information from the sensor to the outside world. This paper reviews the status at NASA Glenn Research Center of SiC Schottky diode gas sensor development as well as that of enabling technologies supporting SiC gas sensor system implementation. A vision of a complete high temperature microfabricated SiC gas sensor system is proposed. In the long-term, it is believed that improvements in the SiC semiconductor material itself could have a dramatic effect on the performance of SiC gas sensor systems.
Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace propulsion applications including emissions monitoring, leak detection, and hydrazine monitoring. These applications often require sensitive gas detection in a range of environments. An effective sensing approach to meet the needs of these applications is a Schottky diode based on a SiC semiconductor. The primary advantage of using SiC as a semiconductor is its inherent stability and capability to operate at a wide range of temperatures. The complete SiC Schottky diode gas sensing structure includes both the SiC semiconductor and gas sensitive thin film metal layers; reliable operation of the SiC-based gas sensing structure requires good control of the interface between these gas sensitive layers and the SiC. This paper reports on the development of SiC gas sensors. The focus is on two efforts to better control the SiC gas sensitive Schottky diode interface. First, the use of palladium oxide (PdOx) as a barrier layer between the metal and SiC is discussed. Second, the use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor element deposition is explored. The use of SiC gas sensors in a multi-parameter detection system is briefly discussed. It is concluded that SiC gas sensors have potential in a range of propulsion system applications, but tailoring of the sensor for each application is necessary.
It is conventionally expected that the performance of existing gas sensors may degrade in the field compared to laboratory conditions because (i) a sensor may lose its accuracy in the presence of chemical interferences and (ii) variations of ambient conditions over time may induce sensor-response fluctuations (i.e., drift). Breaking this status quo in poor sensor performance requires understanding the origins of design principles of existing sensors and bringing new principles to sensor designs. Existing gas sensors are single-output (e.g., resistance, electrical current, light intensity, etc.) sensors, also known as zero-order sensors (Karl Booksh and Bruce R. Kowalski, Analytical Chemistry, DOI: 10.1021/ac00087a718). Any zero-order sensor is undesirably affected by variable chemical background and sensor drift that cannot be distinguished from the response to an analyte. To address these limitations, we are developing multivariable gas sensors with independent responses, which are first-order analytical instruments. Here, we demonstrate self-correction against drift in two types of first-order gas sensors that operate in different portions of the electromagnetic spectrum. Our radiofrequency sensors utilize dielectric excitation of semiconducting metal oxide materials on the shoulder of their dielectric relaxation peak and achieve self-correction of the baseline drift by operation at several frequencies. Our photonic sensors utilize nanostructured sensing materials inspired by Morpho butterflies and achieve self-correction of the baseline drift by operation at several wavelengths. These principles of self-correction for drift effects in first-order sensors open opportunities for diverse emerging monitoring applications that cannot afford frequent periodic maintenance that is typical of traditional analytical instruments.
Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.
This innovation is a system for gas sensing that includes an ultra-low-power MEMS (microelectromechanical system) gas sensor, combined with unique electronic circuitry and a proprietary algorithm for operating the sensor. The electronics were created from scratch, and represent a novel design capable of low-power operation of the proprietary MEMS gas sensor platform. The algorithm is used to identify a specific target gas in a gas mixture, making the sensor selective to that target gas.
A multi-gas sensor is provided which modulates a polarized light beam over a broadband of wavelengths between two alternating orthogonal polarization components. The two orthogonal polarization components of the polarization modulated beam are directed along two distinct optical paths. At least one optical path contains one or more spectral discrimination element, with each spectral discrimination element having spectral absorption features of one or more gases of interest being measured. The two optical paths then intersect, and one orthogonal component of the intersected components is transmitted and the other orthogonal component is reflected. The combined polarization modulated beam is partitioned into one or more smaller spectral regions of interest where one or more gases of interest has an absorption band. The difference in intensity between the two orthogonal polarization components is then determined in each partitioned spectral region of interest as an indication of the spectral emission/absorption of the light beam by the gases of interest in the measurement path. The spectral emission/absorption is indicative of the concentration of the one or more gases of interest in the measurement path. More specifically, one embodiment of the present invention is a gas filter correlation radiometer which comprises a polarizer, a polarization modulator, a polarization beam splitter, a beam combiner, wavelength partitioning element, and detection element. The gases of interest are measured simultaneously and, further, can be measured independently or non-independently. Furthermore, optical or electronic element are provided to balance optical intensities between the two optical paths.
Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.
Advancement of Miniature Optic Gas Sensor (MOGS) Probe Technology" project will investigate newly developed optic gas sensors delivered from a Small Business Innovative Research (SBIR) Phase II effort. A ventilation test rig will be designed and fabricated to test the sensors while integrated with a Suited Manikin Test Apparatus (SMTA). Once the sensors are integrated, a series of test points will be completed to verify that the sensors can withstand Advanced Suit Portable Life Support System (PLSS) environments and associated human metabolic profiles for changes in pressure and levels of Oxygen (ppO2), carbon dioxide (ppCO2), and humidity (ppH2O).
A sensor housing apparatus includes a housing having an enclosure and outer assembly, at least one flow path extending through the housing, a gas sensor disposed in the enclosure and a thermal mass. The thermal mass is mounted within the enclosure in thermal communication with the gas sensor, and is configured to transfer thermal energy from the gas sensor to an ambient environment surrounding the housing and minimize temperature gradients adjacent the gas sensor.
A sensor housing apparatus includes a housing having an enclosure and outer assembly, at least one flow path extending through the housing, a gas sensor disposed in the enclosure and a thermal mass. The thermal mass is mounted within the enclosure in thermal communication with the gas sensor, and is configured to transfer thermal energy from the gas sensor to an ambient environment surrounding the housing and minimize temperature gradients adjacent the gas sensor.