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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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An adaptive moments-based interface reconstruction using intersection of the cell with one half-plane, two half-planes and a circle

We present a new adaptive moment-of-fluid (A-MOF) interface reconstruction method. It uses the zeroth, first, and second moments of the fragment of material inside a cell of the mesh to construct a shape that approximates the respective material fragment. The new method requires information about the material moments only for the cell under consideration. The adaptive method chooses between shapes obtained by the intersection of the cell with one half-plane, two half-planes, or a circle. The A-MOF method allows to exactly reproduce several convex shapes: corners, filaments, and their concave cell-complements; as well as pieces of the circles and its cell-compliments. Interface reconstruction is formulated as a local (for each cell), non-linear, equality constrained optimization problem, which does not require additional communication and allows for an efficient parallel implementation. In conclusion, we present an extensive set of test problems, both for interface reconstruction on a single cell, and for reconstruction of a variety of shapes on the entire mesh.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Eddy Current Model of a Coil Over An Infinite Perfectly Electrical Conductor (PEC) Half-Plane

Eddy current sensors measure the lift-off or distance between the sensor and a conducting surface. They operate on the principle of an alternating current in a conduction coil inducing a magnetic field within the surface. An eddy current is set up in the surface to counter the incident magnetic field which, in turn, sets up a magnetic field which counters that of the coil. This changes the coil impedance which is a function of the lift-off. As the lift-off increases, the effect of the eddy current magnetic field on the coil magnetic field weakens, resulting in a higher inductance and lower resistance. Thus, the lift-off may be derived from an impedance measurement. Dodd and Deeds developed an analytic model for an eddy current sensor coil impedance with an air core which has been implemented in MATLAB. LLNL assembled an eddy current sensor with a mu-metal core for which there is no analytic model. Rather than derive an analytic model which includes the mu-metal core, analytic empirically based functions are derived to map the Dodd and Deeds model to measured inductance and resistance.

42 ENGINEERING↗

Efimov-like states and quantum funneling effects on synthetic hyperbolic surfaces

Engineering lattice models with tailored inter-site tunnelings and onsite energies could synthesize essentially arbitrary Riemannian surfaces with highly tunable local curvatures. Here, we point out that discrete synthetic Poincaré half-planes and Poincaré disks, which are created by lattices in flat planes, support infinitely degenerate eigenstates for any nonzero eigenenergies. Such Efimov-like states exhibit a discrete scaling symmetry and imply an unprecedented apparatus for studying quantum anomaly using hyperbolic surfaces. Furthermore, all eigenstates are exponentially localized in the hyperbolic coordinates, signifying the first example of quantum funneling effects in Hermitian systems. As such, any initial wave packet travels towards the edge of the Poincaré half-plane or its equivalent on the Poincaré disk, delivering an efficient scheme to harvest light and atoms in two dimensions. Furthermore, our findings unfold the intriguing properties of hyperbolic spaces and suggest that Efimov states may be regarded as a projection from a curved space with an extra dimension.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Application of Dislocation Theory to Minimize Defects in Artificial Solids Built with Nanocrystal Building Blocks

Conspectus. Oriented atomic attachment of colloidal inorganic nanocrystals represents a powerful synthetic method for preparing complex inorganic superstructures. Examples include fusion of nanocrystals into dimer and superlattice structures. If the attachment were perfect throughout, then the resulting materials would have single crystal-like alignment of the individual nanocrystals' atomic lattices. While individual colloidal nanocrystals typically are free of many defects, there are a multitude of pathways that can generate defects upon nanocrystal attachment. These attachment generated defects are typically undesirable, and thus developing strategies to favor defect-free attachment or heal defective interfaces are essential. There may also be some cases where attachment-derived defects are desirable. In this Account, we summarize our current understanding of how these defects arise, in order to offer guidance to those who are designing nanocrystal derived solids. The small size of inorganic nanocrystals means short diffusion lengths to the surface, which favor the formation of nanocrystal building blocks with pristine atomic structures. Upon attachment, however, there are numerous pathways that can lead to atomic scale defects, and bulk crystal dislocation theory provides an invaluable guide to understanding these phenomena. As an example, an atomic step edge can be incorporated into the interface leading to an extra half-plane of atoms, known as an edge dislocation. These dislocations can be well described by the Burgers vector description of dislocations, which geometrically identifies planes in which a dislocation can move. Our in situ measurements have verified that bulk dislocation theory predictions for 1D defects hold true at few-nanometer length scales in PbTe and CdSe nanocrystal interfaces. Ultimately, the applicability of dislocation theory to nanocrystal attachment enables the predictive design of attachment to prevent or facilitate healing of defects upon nanocrystal attachment. We applied similar logic to understand formation of planar (2D) defects such as stacking faults upon nanocrystal attachment. Again concepts from bulk crystal defect crystallography can identify attachment pathways that can prevent or deterministically form planar defects upon nanocrystal attachment. The concepts we discuss work well for identifying favorable attachment geometries for nanocrystal pairs ; however it is currently unclear how to translate these ideas to near-simultaneous multiparticle attachment. Geometric frustration, which prevents nanocrystal rotation, and yet-to-be considered defect generation pathways unique to multiparticle attachment complicate defect-free superlattice attachment. New imaging methods now allow for the direct observation of local attachment trajectories and may enable improved understanding of such multiparticle phenomena. With further refinement, a unified framework for understanding and ultimately eliminating structural defects in fused nanocrystal superstructures may well be achievable in coming years.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Pure edge-dislocation half-loops in low-temperature Ga⁢N for V-defect formation

Lateral injection of carriers through semipolar crystallographic planes into c-plane QWs is one of the new frontiers in III-N light-emitting diodes (LEDs), especially for long wavelengths. Strategic use of V-defects has proven to be the most promising method for lateral injection, and creating optimal V-defect structure and density is an important research area for reducing forward voltage and increasing wall plug efficiency. Here, in this article, we present a novel method for forming V-defects in nominally unstressed low-temperature Ga⁢N through the generation of pure edge-dislocation half-loops. We present a detailed material science analysis of the loops via scattering-contrast electron microscopy. The loops have pure-edge character with Burgers vector 1/3 ⁢⟨$11\bar{2}0$⟩, and form in a sessile orientation on {$11\bar{2}0$} a-planes. The two arms of the loops are inclined such that the extra half-planes face down toward the growth substrate. The dislocation loops can be used to intentionally form V-defects through conditions of kinetically limited growth: these conditions also favor nucleation of V-defects at ∼100% of other threading dislocations in the Ga⁢N templates. Patterned sapphire substrates (PSS) are one of the most important substrates for III-N LED growth because of their superior light extraction. However, due to its low threading dislocation density, PSS have not been used extensively for V-defect LEDs. This work provides a pathway for improved control of V-defect formation and density on LEDs grown on sapphire with the goal of enabling uniform lateral injection in these V-defect engineered LEDs with low forward voltage, including PSS for high light extraction.

LEDs↗

Casimir force, causality, and the Gurzhi model

An extended Drude model, termed the Gurzhi model, which takes into account the electron-phonon and electron-electron interactions, is applied to calculate the Casimir force between two metallic plates. It is shown that although the dielectric permittivity of the Gurzhi model has a first-order pole in the upper half-plane of complex frequencies and, thus, violates the causality principle, it can be used in a restricted frequency interval in combination with the experimental permittivity determined by the optical data for the complex index of refraction. The imaginary part of the Gurzhi dielectric permittivity of Au at low frequencies demonstrates better agreement with the permittivity given by the optical data than the simple Drude model. The Casimir pressure between two Au plates is computed using the Gurzhi, Drude, and plasma model approaches, taking into account the optical data, as well as with the simple Drude and plasma models. Finally, the contribution of the electron-electron scattering to the Casimir pressure is estimated. Although a comparison with the measurement data of two precise experiments shows that the Gurzhi model does not resolve the Casimir puzzle, the obtained results suggest further clarification of this fundamental problem.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Elastic Solutions to 2D Plane Strain Problems: Nonlinear Contact and Settlement Analysis for Shallow Foundations

The classical Neumann boundary value problem of an isotropic, homogeneous elastic half-plane under plane strain conditions is readdressed as the limiting case of the fully three-dimensional problem. Analytical solutions of the stress and strain tensors are obtained by taking the limit from known three-dimensional solutions. It is shown that the displacement fields for the plane strain problem are not well defined. A small number of simple expressions are developed, which provide a general solution for linearly-varying traction over arbitrary regions on the boundary. A simple, efficient, and rapidly convergent algorithm is developed which uses these solutions as analytic elements and provides a solution approach to the general boundary value problem. The method is verified against known solutions for Hertzian contact between parallel cylinders. Two numerical examples are presented for the analysis of shallow foundation systems. In the first, the boundary conditions are informed by analytical elastoplastic calculations and a strain influence analysis is performed and compared with the Schmertmann method. Subsequently, empirical laboratory contact traction distributions measured by Bauer et al., in both the normal and tangential directions are employed as boundary conditions for an analysis of the underlying stress field.

42 ENGINEERING↗