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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

High-Efficiency Microwave Power Amplifier

A high-efficiency power amplifier that operates in the S band (frequencies of the order of a few gigahertz) utilizes transistors operating under class-D bias and excitation conditions. Class-D operation has been utilized at lower frequencies, but, until now, has not been exploited in the S band. Nominally, in class D operation, a transistor is switched rapidly between "on" and "off" states so that at any given instant, it sustains either high current or high voltage, but not both at the same time. In the ideal case of zero "on" resistance, infinite "off" resistance, zero inductance and capacitance, and perfect switching, the output signal would be a perfect square wave. Relative to the traditional classes A, B, and C of amplifier operation, class D offers the potential to achieve greater power efficiency. In addition, relative to class-A amplifiers, class-D amplifiers are less likely to go into oscillation. In order to design this amplifier, it was necessary to derive mathematical models of microwave power transistors for incorporation into a larger mathematical model for computational simulation of the operation of a class-D microwave amplifier. The design incorporates state-of-the-art switching techniques applicable only in the microwave frequency range. Another major novel feature is a transmission-line power splitter/combiner designed with the help of phasing techniques to enable an approximation of a square-wave signal (which is inherently a wideband signal) to propagate through what would, if designed in a more traditional manner, behave as a more severely band-limited device (see figure). The amplifier includes an input, a driver, and a final stage. Each stage contains a pair of GaAs-based field-effect transistors biased in class D. The input signal can range from -10 to +10 dBm into a 50-ohm load. The table summarizes the performances of the three stages

Sims, Williams H.↗
NASA NTRS2001

2250-MHz High Efficiency Microwave Power Amplifier (HEMPA)

Tnis paper will focus on developing an exotic switching technique that enhances the DC-to-RF conversion efficiency of microwave power amplifiers. For years, switching techniques implemented in the 10 kHz to 30 MHz region have resulted in DC-to-RF conversion efficiencies of 90-95-percent. Currently amplifier conversion efficiency, in the 2-3 GHz region approaches, 10-20-percent. Using a combination of analytical modeling and hardware testing, a High Efficiency Microwave Power Amplifier was built that demonstrated conversion efficiencies four to five times higher than current state of the art.

Sims, W. Herbert↗
NASA NTRS2004

High Efficiency Microwave Power Amplifier (HEMPA) Design

This paper will focus on developing an exotic switching technique that enhances the DC-to-RF conversion efficiency of microwave power amplifiers. For years, switching techniques implemented in the 10 kHz to 30 MHz region have resulted in DC-to-RF conversion efficiencies of 90-95-percent. Currently amplifier conversion efficiency, in the 2-3 GHz region approaches, 10-20-percent. Using a combination of analytical modeling and hardware testing, a High Efficiency Microwave Power Amplifier was built that demonstrated conversion efficiencies four to five times higher than current state of the art.

Sims, W. Herbert↗
NASA NTRS2004

High Efficiency Microwave Power Amplifier (HEMPA) Design

This paper will focus on developing an exotic switching technique that enhances the DC-to-RF conversion efficiency of microwave power amplifiers. For years, switching techniques implemented in the 10 kHz to 30 MHz region have resulted in DC-to-RF conversion efficiencies of 90-95-percent. Currently amplifier conversion efficiency, in the 2-3 GHz region approaches, 10-20-percent. Using a combination of analytical modeling and hardware testing, a High Efficiency Microwave Power Amplifier was built that demonstrated conversion efficiencies four to five times higher than current state of the art.

Sims, W. Herbert↗
NASA NTRS2010

Space-Qualified Traveling-Wave Tube

The L-3 Communications Electron Technologies, Inc. Model 999HA traveling-wave tube (TWT), was developed for use as a high-power microwave amplifier for high-rate transmission of data and video signals from deep space to Earth (see figure). The 999HA is a successor to the 999H a non-space qualified TWT described in High-Power, High-Efficiency Ka-Band Traveling-Wave Tube (LEW-17900-1), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 32. Operating in the 31.8-to-32.3 GHz frequency band, the 999HA has been shown to generate 252 W of continuous- wave output power at 62 percent overall power efficiency a 75-percent increase in output power over the 999H. The mass of the 999HA is 35 percent less than that of the 999H. Moreover, taking account of the elimination of a Faraday cage that is necessary for operation of the 999H but is obviated by a redesign of high-voltage feed-throughs for the 999HA, the overall reduction in mass becomes 57 percent with an 82 percent reduction in volume. Through a series of rigorous tests, the 999HA has been qualified for operation aboard spacecraft with a lifetime exceeding seven years. Offspring of the 999HA will fly on the Kepler and Lunar Reconnaissance Orbiter missions.

Wilson, Jeffrey D.↗
NASA NTRS2001

High Efficiency Microwave Power Amplifier: From the Lab to Industry

Since the beginnings of space travel, various microwave power amplifier designs have been employed. These included Class-A, -B, and -C bias arrangements. However, shared limitation of these topologies is the inherent high total consumption of input power associated with the generation of radio frequency (RF)/microwave power. The power amplifier has always been the largest drain for the limited available power on the spacecraft. Typically, the conversion efficiency of a microwave power amplifier is 10 to 20%. For a typical microwave power amplifier of 20 watts, input DC power of at least 100 watts is required. Such a large demand for input power suggests that a better method of RF/microwave power generation is required. The price paid for using a linear amplifier where high linearity is unnecessary includes higher initial and operating costs, lower DC-to-RF conversion efficiency, high power consumption, higher power dissipation and the accompanying need for higher capacity heat removal means, and an amplifier that is more prone to parasitic oscillation. The first use of a higher efficiency mode of power generation was described by Baxandall in 1959. This higher efficiency mode, Class-D, is achieved through distinct switching techniques to reduce the power losses associated with switching, conduction, and gate drive losses of a given transistor.

Sims, William Herbert, III↗
NASA NTRS2001

The HP 85192B EEFet3 GaAs FET Nonlinear Model Used in the High Efficiency Microwave Power Amplifier (HEMPA)

Most nonlinear circuit analysis programs that exist today were designed primarily for transient analysis. By incorporating more accurate models in simulation programs, accurate predictions of GaAs field effect transistors (FET) behavior can be accomplished. However, should the designer need to simulate GaAs FETs that operate at high DC-to-RF conversion efficiencies, a more sophisticated model is needed. A relevant and appropriate method is called harmonic-balance, as described by Quere et al.

Sims, William Herbert, III↗
NASA NTRS2002

Process for a High Efficiency Class D Microwave Power Amplifier Operating in the S-Band

A process and product providing a High Efficiency Microwave Power Amplifier (HEMPA) which propagates S-Band microwave frequency square waves; utilizing a program simulating FETs at high DC-to-RF efficiencies, which analyses linear elements of selected FETs in a frequency domain, and non-linear elements of the FETs in a time domain, and converts the time domain values into the frequency domain, and performs DC and S-parameter simulated measurements based on predefined data for each FET. Individual FET parameters are extracted and isolated by converting the S-parameters to admittance or impedance parameters to derive FET models for each FET, which the program uses to provide a final output of a HEMPA circuit based on iterative simulations of an amplification circuit utilizing microwave topology and frequencies. Iterative simulations of the amplification circuit analyze output values of a plurality of cascaded stages of the FETs, which are arranged in a push-pull configuration.

William Herbert Sims, III↗
NASA NTRS1980

Critical technology areas of an SPS development and the applicability of European technology

Possible system development and implementation scenarios for the hypothetical European part of a cooperative Satellite Power System effort are discussed, and the technology and systems requirements which could be used as an initial guideline for further evaluation studies are characterized. Examples of advanced European space technologies are described including high power microwave amplifiers, antennas, advanced structures, multi-kilowatt solar arrays, attitude and orbit control systems, and electric propulsion.

Kassing, D.↗
NASA NTRS2005

NASA Tech Briefs, May 2005

Topics covered include: Fastener Starter; Multifunctional Deployment Hinges Rigidified by Ultraviolet; Temperature-Controlled Clamping and Releasing Mechanism; Long-Range Emergency Preemption of Traffic Lights; High-Efficiency Microwave Power Amplifier; Improvements of ModalMax High-Fidelity Piezoelectric Audio Device; Alumina or Semiconductor Ribbon Waveguides at 30 to 1,000 GHz; HEMT Frequency Doubler with Output at 300 GHz; Single-Chip FPGA Azimuth Pre-Filter for SAR; Autonomous Navigation by a Mobile Robot; Software Would Largely Automate Design of Kalman Filter; Predicting Flows of Rarefied Gases; Centralized Planning for Multiple Exploratory Robots; Electronic Router; Piezo-Operated Shutter Mechanism Moves 1.5 cm; Two SMA-Actuated Miniature Mechanisms; Vortobots; Ultrasonic/Sonic Jackhammer; Removing Pathogens Using Nano-Ceramic-Fiber Filters; Satellite-Derived Management Zones; Digital Equivalent Data System for XRF Labeling of Objects; Identifying Objects via Encased X-Ray-Fluorescent Materials - the Bar Code Inside; Vacuum Attachment for XRF Scanner; Simultaneous Conoscopic Holography and Raman Spectroscopy; Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP; Vibrating Optical Fibers to Make Laser Speckle Disappear; Adaptive Filtering Using Recurrent Neural Networks; and Applying Standard Interfaces to a Process-Control Language.

Source record↗
DOE OSTI2019

Propagating molecular rotational coherences through single-frequency pulses in the strong field regime

In the weak-field limit in which microwave spectroscopy is typically carried out, an application of a single-frequency pulse that is resonant with a molecular transition will create a coherence between the pair of states involved in the rotational transition, producing a free-induction decay (FID) that, after Fourier transform, produces a molecular signal at that same resonance frequency. With the advent of chirped-pulse Fourier transform microwave methods, the high-powered amplifiers needed to produce broadband microwave spectra also open up other experiments that probe the molecular response in the high-field regime. This paper describes a series of experiments involving resonant frequency pulses interrogating jet-cooled molecules under conditions of sufficient power to Rabi oscillate the two-state system through many Rabi cycles. The Fourier-transformed FID shows coherent signal not only at the applied resonant frequency but also at a series of transitions initially connected to the original one by sharing an upper or lower level with it. As the duration of the single-frequency excitation is increased from 250 to 1500 ns, the number of observed off-resonant, but dipole-allowed, molecular coherences grow. The phenomenon is quite general, having been demonstrated in Z-phenylvinylnitrile, E-phenylvinylnitrile (E-PVN), benzonitrile, guaiacol, and 4-pentynenitrile. In E-PVN, the highest power/longest pulse duration, coherent signal is also present at energetically nearby but not directly connected transitions. Even in molecular samples containing more than one independent species, only transitions due to the single species responsible for the original resonant transition are present. Here, we develop a time-dependent model of the molecular/photon system and use it in conjunction with the experiment to test possible sources of the phenomenon.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRSDate not supplied

Wide Bandgap Semiconductor Devices & Systems for Communications in Extreme Environment

The feasibility of Ka-band gallium nitride (GaN) based high power amplifier (HPA) for signal amplification in extreme planetary environment is investigated and its measured performance is presented. The data includes Pout, PAE, EVM for several waveforms and data rates, output spectrum, IMD, Noise Figure, and Gain. The data indicates excellent overall performance. Potential application of this HPA includes communication systems required to operate in the extreme hot environment of Mercury and Venus, extreme cold and high radiation environment of Jupiter’s icy moons, and Artemis missions that involve human/robotic exploration and long-term presence on the Moon.

Gallium Nitride↗
NASA NTRS1977

Secondary-electron-emission properties of conducting surfaces with application to multistage depressed collectors for microwave amplifiers

To improve the efficiency of high power microwave tubes, low secondary electron yield electrode surface for use in depressed collectors are needed. The secondary emission characteristics of a number of materials were investigated. The materials studied were beryllium, carbon (soot and pyrolytic graphite), copper, titanium carbide, and tantalum. Both total secondary yield delta and relative reflected primary yield were measured. These measurements were made in conjunction with Auger spectroscopy so that the secondary emission characteristics could be determined as a function of surface contamination or purity. The results show that low atomic weight elements, such as beryllium and carbon, have the lowest reflected primary yield and that roughening the surface of an electrode can markedly decrease secondary yield both for delta and reflected primaries. All factors considered, a roughened pyrolytic graphite surface showed the greatest potential for use as an electrode surface in depressed collectors.

Forman, R.↗
NASA NTRS2002

Power-Efficient, High-Current-Density, Long-Life Thermionic Cathode Developed for Microwave Amplifier Applications

A power-efficient, miniature, easily manufactured, reservoir-type barium-dispenser thermionic cathode has been developed that offers the significant advantages of simultaneous high electron-emission current density (>2 A/sq cm) and very long life (>100,000 hr of continuous operation) when compared with the commonly used impregnated-type barium-dispenser cathodes. Important applications of this cathode are a wide variety of microwave and millimeter-wave vacuum electronic devices, where high output power and reliability (long life) are essential. We also expect it to enable the practical development of higher purveyance electron guns for lower voltage and more reliable device operation. The low cathode heater power and reduced size and mass are expected to be particularly beneficial in traveling-wave-tube amplifiers (TWTA's) for space communications, where future NASA mission requirements include smaller onboard spacecraft systems, higher data transmission rates (high frequency and output power) and greater electrical efficiency.

Wintucky, Edwin G.↗
NASA NTRS2010

Ka-Band Waveguide Two-Way Hybrid Combiner for MMIC Amplifiers

The design, simulation, and characterization of a novel Ka-band (32.05 0.25 GHz) rectangular waveguide two-way branch-line hybrid unequal power combiner (with port impedances matched to that of a standard WR-28 waveguide) has been created to combine input signals, which are in phase and with an amplitude ratio of two. The measured return loss and isolation of the branch-line hybrid are better than 22 and 27 dB, respectively. The measured combining efficiency is 92.9 percent at the center frequency of 32.05 GHz. This circuit is efficacious in combining the unequal output power from two Ka-band GaAs pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) power amplifiers (PAs) with high efficiency. The component parts include the branch-line hybrid-based power combiner and the MMIC-based PAs. A two-way branch-line hybrid is a four-port device with all ports matched; power entering port 1 is divided in phase, and into the ratio 2:1 between ports 3 and 4. No power is coupled to port 2. MMICs are a type of integrated circuit fabricated on GaAs that operates at microwave frequencies, and performs the function of signal amplification. The power combiner is designed to operate over the frequency band of 31.8 to 32.3 GHz, which is NASA's deep space frequency band. The power combiner would have an output return loss better than 20 dB. Isolation between the output port and the isolated port is greater than 25 dB. Isolation between the two input ports is greater than 25 dB. The combining efficiency would be greater than 90 percent when the ratio of the two input power levels is two. The power combiner is machined from aluminum with E-plane split-block arrangement, and has excellent reliability. The flexibility of this design allows the combiner to be customized for combining the power from MMIC PAs with an arbitrary power output ratio. In addition, it allows combining a low-power GaAs MMIC with a high-power GaN MMIC. The arbitrary port impedance allows matching the output impedance of the MMIC PA directly to the waveguide impedance without transitioning first into a transmission line with characteristic impedance of 50 ohms. Thus, by eliminating the losses associated with a transition, the overall SSPA efficiency is enhanced. For reducing the cost and weight when required in very large quantities, such as in the beam-forming networks of phased-array antenna systems, the combiner can be manufactured using metal-plated plastic. Two hybrid unequal power combiners can be cascaded to realize a non-binary combiner (for e.g., a three-way) and can be synergistically optimized for low VSWR (voltage standing wave ratio), low insertion loss, high isolation, and wide bandwidth using commercial off-the-shelf electromagnetic software design tools.

Simons, Rainee N.↗
NASA NTRS1981

Solar Power Satellite antenna phase control system hardware simulation, phase 4: Volume 1: Executive summary

The phase control system is described. Potential sources of phase error are identified and the performance leading to selection of the allowable phase error for each source is summarized. The pilot transmitter, the effects of ionospheric, the master slave returnable timing system (MSRTS), the SPS receiver, and the high power amplifier for dc to microwave conversion are considered separately. Design parameters of the pilot transmitter and spacetenna transponder are presented.

Lindsey, W. C.↗
NASA NTRS2009

Ultra High Power and Efficiency Space Traveling-Wave Tube Amplifier Power Combiner with Reduced Size and Mass for NASA Missions

In the 2008 International Microwave Symposium (IMS) Digest version of our paper, recent advances in high power and efficiency space traveling-wave tube amplifiers (TWTAs) for NASA s space-to-Earth communications are presented. The RF power and efficiency of a new K-Band amplifier are 40 W and 50 percent and that of a new Ka-Band amplifier are 200 W and 60 percent. An important figure-of-merit, which is defined as the ratio of the RF power output to the mass (W/kg) of a TWT, has improved by a factor of ten over the previous generation Ka-Band devices. In this extended paper, a high power, high efficiency Ka-band combiner for multiple TWTs, based on a novel hybrid magic-T waveguide circuit design, is presented. The measured combiner efficiency is as high as 90 percent. In addition, at the design frequency of 32.05 GHz, error-free uncoded BPSK/QPSK data transmission at 8 megabits per second (Mbps), which is typical for deep space communications is demonstrated. Furthermore, QPSK data transmission at 622 Mbps is demonstrated with a low bit error rate of 2.4x10(exp -8), which exceeds the deep space state-of-the-art data rate transmission capability by more than two orders of magnitude. A potential application of the TWT combiner is in deep space communication systems for planetary exploration requiring transmitter power on the order of a kilowatt or higher.

Simons, Rainee N.↗