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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

I-V curve analysis of single-nanoparticle Al-doped SrTiO 3

Strontium Titanate (SrTiO 3 or STO) is an oxide-semiconductor material which shows promise for photocatalytic water splitting, but remains poorly understood. To better understand its carrier dynamics, STO nanoparticles deposited onto an Au substrate were placed inside of a Scanning Electron Microscope (SEM) and then contacted with an Au probe. Current-voltage (I-V) measurements were taken with and without electron beam illumination. Fitting to the curves, we estimate the doping density ($N_D \approx 10^{22.1 \pm 1.2}$ cm$^{-3}$) and built-in potential ($\phi_{bi} \approx 0.84 \pm 0.45$ eV). We then used these I-V measurements to estimate the diffusion time ($\tau$) of our samples and observed an exponential dependence of $\tau$ on sample size in the range of 350-550 nm.

36 MATERIALS SCIENCE↗

Non-contact Current-Voltage (I-V) Tracer for Photovoltaics

This report presents a non-contact approach to simultaneously obtain current-voltage (I-V) curves of photovoltaic (PV) substrings and modules in a string without the need of disconnecting the individual modules from the string. There are two types of I-V curve tracers currently available in the marketplace, capacitor-based and electronic load-based. The primary requirement of these conventional I-V tracers is the disconnection of individual modules in the string so the individual modules contacted through the connectors of the individual modules. These contact-tracers have three major limitations in the utility scale power plants: First limitation – Weather and Accuracy: The mass-produced commercial contact-tracers cannot obtain the I-V curves of both string and its modules (as high as 30 modules), almost simultaneously (within about 5 minutes) at, practically, a single irradiance level, a single module temperature, a single spectrum and a single AOI (angle of incidence). This inability of the contact-tracers forces the testing personnel to wait for an extended or multiple sunny (>800 W/m 2 ) duration(s) of a cloudy day. This is a serious limitation as waiting for the sunny conditions or days is a huge practical challenge in almost all locations, except desert locations. Also, since the I-V curves are obtained at different prevailing weather conditions, it becomes critical to translate all the measured I-V curves of 30 modules in the string to a single test condition, for example STC (standard test conditions), so the underperforming modules can be identified. The accuracy of translation equations is heavily influenced by the irradiance level and temperature, spectral and AOI ranges; Second limitation - Safety: The second limitation is related to the high voltage electrical safety of the test personnel during disconnecting and reconnecting of individual modules or cable connectors from the string under daylight conditions and damaging of the original module connectors (especially the field aged connectors) during the disconnecting and reconnecting process; Third limitation – Labor: The third limitation is related to the enormous amount of time and hardship for the test personnel under prevailing (often harsh) protracted field conditions. This project was executed by Arizona State University in collaboration with its industry partner, PV Measurements Inc. (PVM). To mitigate all the three challenges of the state-of-the-art equipment indicated above, we utilized a non-contact I-V (NCIV) tracer approach. In this approach, we utilized an electrostatic voltmeter (ESV) and voltage sensor/probe combination to obtain I-V curves. The ESV units are extensively used in the high voltage industry but not in the PV industry. To obtain the simultaneous I-V curves of the substrings and modules within a string, we utilized multiple commercial ESV-Probe sets. In this approach, we utilized a non-contact voltage sensor (called, Probe) placed on the glass surface of the module (above the last cell of the module). This probe senses the module voltage (with respect to ground) through measured capacitance which is dictated by the surface charges (which in turn is dictated by the module voltage) and transmits the sensed voltage to the voltmeter (called, ESV or NCV, non-contact voltmeter). The current is sensed by a non-contact hall sensor. In a 30-module string, the 30th probe obtains the entire string I-V along with the string I-V obtained by the electronic load. so that the I-V curves of the substrings and modules can be obtained by NCIV without the need of disconnecting the individual modules in the string. The string I-V curves obtained by the electronic load and NCIV can be compared for the accuracy determination. One can use 30 ESV units and 30 Probes to obtain 30 I-V curves of a 30-module string or use just 5 ESV units and 30 Probes in conjunction with 5 six-channel switchboxes (called, 6:1 switchboxes). To reduce the equipment cost, we utilized the 6:1 switchbox approach so the number of ESV units is reduced from 30 to 5. The approaches, achievements and challenges of this project are detailed in this report.

14 SOLAR ENERGY↗

Thermodynamic Modeling of a Solid Oxide Fuel Cell to Couple with an Existing Gas Turbine Engine Model

The Controls and Dynamics Technology Branch at NASA Glenn Research Center are interested in combining a solid oxide fuel cell (SOFC) to operate in conjunction with a gas turbine engine. A detailed engine model currently exists in the Matlab/Simulink environment. The idea is to incorporate a SOFC model within the turbine engine simulation and observe the hybrid system's performance. The fuel cell will be heated to its appropriate operating condition by the engine s combustor. Once the fuel cell is operating at its steady-state temperature, the gas burner will back down slowly until the engine is fully operating on the hot gases exhausted from the SOFC. The SOFC code is based on a steady-state model developed by The U.S. Department of Energy (DOE). In its current form, the DOE SOFC model exists in Microsoft Excel and uses Visual Basics to create an I-V (current-voltage) profile. For the project's application, the main issue with this model is that the gas path flow and fuel flow temperatures are used as input parameters instead of outputs. The objective is to create a SOFC model based on the DOE model that inputs the fuel cells flow rates and outputs temperature of the flow streams; therefore, creating a temperature profile as a function of fuel flow rate. This will be done by applying the First Law of Thermodynamics for a flow system to the fuel cell. Validation of this model will be done in two procedures. First, for a given flow rate the exit stream temperature will be calculated and compared to DOE SOFC temperature as a point comparison. Next, an I-V curve and temperature curve will be generated where the I-V curve will be compared with the DOE SOFC I-V curve. Matching I-V curves will suggest validation of the temperature curve because voltage is a function of temperature. Once the temperature profile is created and validated, the model will then be placed into the turbine engine simulation for system analysis.

Brinson, Thomas E.↗

Advanced Photovoltaic Module Characterization: Using Image Transformers for Current–Voltage Curve Prediction From Electroluminescence Images

Individual photovoltaic (PV) module health monitoring can be a daunting task for operation and maintenance of solar farms. Modules can be inspected through luminescence, thermal imaging, and current–voltage (I–V) curve analyzes for identification of damage and power loss. I–V curves provide easily interpretable data to determine module health as they directly provide electrical performance metrics. However, in order to obtain these curves, modules must be disconnected from the array and either removed to a solar simulator or characterized in situ with corrections for module temperature, the incident solar spectrum, and intensity. Luminescence or thermal images of a module are relatively easy to acquire in situ. Electroluminescence (EL) images highlight physical defects in the modules but do not provide easily interpretable features to correlate with electrical performance. This work presents a SWin transformer network to predict I–V curves for PV modules from their corresponding EL images. The predicted I–V curves allow the accurate prediction of the maximum power point (MPP), short-circuit current I sc , and open-circuit voltage V oc with a mean error less of than 1%. Comparing single diode model (SDM) parameters extracted from the predicted curves to those extracted from the true curves, the series resistance R s demonstrates a mean error of 5.19%, and the photocurrent I a mean error of 0.197%. The shunt resistance R sh and dark current Io parameters are predicted with larger errors because of their sensitivity to small changes in the I–V curve.

Byford, Brandon K. [New Mexico State Univ., Las Cr↗

Diagnosing and overcoming recombination and resistive losses in non-silicon solar cells using a silicon-inspired characterization platform

This project aimed to generate the characterization tools needed for accurate and systematic loss analysis in non-silicon photovoltaic solar cell technologies and, through the use of these tools and analysis techniques, contribute to the development of a novel class of hetero-contacts to II-VI absorbers, with the final goal of demonstrating record-breaking CdSeTe devices. CdSeTe solar cells provide a prime example of the potential impact of the techniques we proposed to develop and implement: record poly-CdSeTe cells have bandgap-voltage deficits (W oc ) of approximately 550 mV, as compared with below 400 mV for all other mature PV technologies. Similarly, these record CdSeTe devices have FFs below 80%, when other mature cells are near or above 85%. Frustratingly, a systematic identification of the origin of these sub-par performances—for example recombination or resistive losses—has been lacking, thus slowing down the development of these technologies. Similarly, it is often asserted that CdSeTe cells need a better back (hole) contact. Although most believe this is true, no one knew—at the start of this project—how high the V oc and FF could be for a given cell if it had a perfect back contact. Such characterization techniques and loss analysis methods exist and are routinely performed on c-Si solar cells (e.g. injection-dependent lifetime, Suns-V oc , transfer length method, etc). Over the years, they have been instrumental in the development of silicon devices that operate at 91% of their theoretical (Auger) limit. Lifetime testing, and the associated reconstruction of the implied-J-V curve, can moreover be performed at every cell-processing step, thus allowing a direct peek into the impact of that step on cell performance. Therefore, adapting these techniques and tools to non-Si devices would greatly improve their learning rate. In this project, we developed a Suns-ERE technique—the equipment, methodology, and know-how—to measure the implied-J-V curve, the pseudo-J-V curve, and the actual J-V curve of a thin-film solar cell, allowing an accurate assessment of the quality of the bulk material and its surface passivation, the selectivity of the contact, and its resistivity. We used this technique to show that the absorber of present CdSeTe solar cells is capable of achieving 1 V Voc,, that passivation layers exist (e.g., Al2O3) that can support such high voltages, and that the barrier is identifying contact layers that are both passivating and carrier-selective. The characterization platform created in this project and the understanding generated using it will accelerate the progress of non-silicon PV technologies. In particular, the project will contribute to CdSeTe solar cells with Voc > 1 V and cell efficiency > 24%. Such cells provide a pathway to module-level efficiencies >23%. As CdSeTe presently competes with silicon on module cost (in $\$ $/W) and yet has significantly more room for efficiency gains, the potential for LCOE reduction is particularly large. For example, CdTe modules with an efficiency of 21% would allow an LCOE below $\$ $0.04kWh -1 in average US climates.

14 SOLAR ENERGY↗

Surface structure of Sn doped β-Ga 2 O 3 (010) p(1×1) studied by quantitative low energy electron diffraction

Here, we have studied the surface structure of a single crystal β-Ga 2 O 3 (010) using quantitative Low Energy Electron Diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). The XPS measurements show spectra typical of stoichiometric Ga 2 O 3 with a clean surface. LEED consistently shows a p(1x1) pattern, free of surface reconstruction. Quantitative LEED I(V) curves are acquired for 41 distinct diffraction spots. The experimental I(V) curves are compared to simulations over the first five layers. The best fits to the experimental LEED I(V) curves acquired at all diffraction spots are then used to calculate the interplanar relaxation and atomic rumpling. Significant atomic rumpling and interplanar relaxation are found over the first 5 atomic layers. As a result of rumpling a polarization of ~ 2 μC/cm 2 develops in the topmost surface layer. The structural results are in good agreement with previous density functional theory calculations and experimental X-ray photoelectron diffraction.

36 MATERIALS SCIENCE↗

Experimental validation of solid oxide fuel cell polarization modeling: An LSM-YSZ/YSZ/Ni-YSZ case study

Polarization modeling based on the measured I-V curves is a useful tool for analyzing SOFC performance and diagnosing performance limitations. Using the polarization model, the overpotential of a cell is usually separated into different polarization contributions, including area specific ohmic polarization, activation polarization, and anodic and cathodic concentration polarizations. In this study, we aim to experimentally validate the accuracy of the polarization model. As a case study, anode-supported cells with LSM-YSZ/YSZ/Ni-YSZ configuration are used. By curve-fitting the I-V curves of a cell tested under different cathode oxygen partial pressures into the polarization model, the contributions of different polarization losses are quantified. To validate the polarization model, independent experiments/studies including electrochemical impedance spectroscopy, cathode kinetics study, ex-situ diffusivity measurement, and tortuosity measurement using 3D reconstructed anode are conducted. The results from polarization modeling and from validation studies are in good agreement, thereby validating the polarization model for SOFC performance analysis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Determining circuit model parameters from operation data for PV system degradation analysis: $\mathrm{PVPRO}$

Physics-based circuit parameters like series and shunt resistance are essential to provide insights into the degradation status of photovoltaic (PV) arrays. However, calculating these parameters typically requires a full current-voltage characteristic (I-V curve), the acquisition of which involves specific measurement devices and costly methods. Thus, I-V curves of the PV system level are often not available. Here this paper proposes a methodology (PVPRO) to estimate these I-V curve parameters using only operation (string-level DC voltage and current) and weather data (irradiance and temperature). PVPRO first performs multi-stage data pre-processing to remove noisy data. Next, the time-series DC data are used to fit an equivalent circuit single-diode model (SDM) to estimate the circuit parameters by minimizing the differences between the measured and estimated values. In this way, the time evolutions of the SDM parameters are obtained. We evaluate PVPRO on synthetic datasets and find an excellent estimation of both SDM and the key I-V parameters (e.g., open-circuit voltage, short-circuit current, maximum power, etc.) with an average relative error of 0.55%. The performance, especially the extracted degradation rate of parameters, is robust to various measurement noises and the presence of faults. In addition, PVPRO is applied to a 271 kW PV field system. The relative error between the real and estimated operation voltage and current is less than 1%, suggesting that degradation trends are well captured. PVPRO represents a promising open-source tool to extract the time-series degradation trends of key PV parameters from routine operation data.

14 SOLAR ENERGY↗

Circuit analysis method for thin-film solar cell modules

The design of a thin-film solar cell module is dependent on the probability of occurrence of pinhole shunt defects. Using known or assumed defect density data, dichotomous population statistics can be used to calculate the number of defects expected in a module. Probability theory is then used to assign the defective cells to individual strings in a selected series-parallel circuit design. Iterative numerical calculation is used to calcuate I-V curves using cell test values or assumed defective cell values as inputs. Good and shunted cell I-V curves are added to determine the module output power and I-V curve. Different levels of shunt resistance can be selected to model different defect levels.

Burger, D. R.↗

Correlation between nonequilibrium thermodynamic theory and V-I curves of a thermionic converter

The methods of irreversible thermodynamics are used as a basis for developing a transport theory applicable to thermionic cesium diodes. This theory is applied in describing certain aspects of experimental voltage-current (V-I) characteristic curves of a thermionic diode. Emphasis is placed on the open-circuit voltage and short-circuit current of the V-I curves. Experimental results show that the open-circuit voltage is essentially independent of the interelectrode spacing, whereas the short-circuit current varies inversely with the interelectrode separation. The inverse dependence is in agreement with the results of the present analysis and also with results expected from diffusion theory, which has been used in other analyses. In fact, the theory used in this investigation reduces to diffusion theory under special assumptions. Deviations from diffusion theory, which were found in experimental results, can be accounted for using the theory developed in this paper.

Robinson, L. B.↗

Neutron radiation hardness of aluminum gallium nitride UV LEDs at various wavelengths

Radiation hard diagnostics are critical to the success of nuclear fusion at National Ignition Facility, Z, ITER, and prolonged space explorations. We have first demonstrated the exceptional proton radiation hardness of initial GaN devices and qualified their space flight and deployment for missions such as the Laser Interferometer Space Antenna and International Space Station. We have further conducted neutron radiation hardness experiments at Los Alamos Neutron Science Center by opening a new high fluence beam station. During 2014–2016, we irradiated multiple Aluminum Gallium Nitride (AlGaN) LEDs with a maximum fluence of 2.4 × 1013 neutrons/cm2 in 3 years and generated 54 161 current–voltage (I–V) scan traces. Our data processing program analyzes each and all I–V traces. In addition, we retrieved local temperature records to analyze and remove temperature effects in the outdoor environment. The I–V curve families of AlGaN UV LEDs with emitting wavelengths of 265, 275, and 310 nm were compared. The I–V curves of 265 nm AlGaN UV LEDs have the smallest deviations from the average value, while the I–V curves for 310 nm AlGaN LEDs showed the largest deviations from the average value. We have reached another important recommendation for the optimal use of multiple AlGaN optoelectronic devices or imaging arrays for inertially confined fusion diagnostics: Shorter wavelength devices at 265 nm exhibit more consistent radiation hardness performance than the 310 nm devices. Higher aluminum content LEDs or AlxGa1–xN devices with higher mole fraction x for generating shorter wavelengths have better radiation hardness for fusion diagnostics.

Sun, K. -X. (ORCID:0000000224659235)↗

U, B, V light curves of CO Lacertae

CO Lacertae is one of the very few known binaries with both a short period of apsidal motion and good M, L, R data. The new U, B, V light curves presented here provide two times of minima and a check on Semeniuk's value for P(aps). This is the first published example of an eclipsing binary analyzed in terms of a physical model (as opposed to a model based on spherical or ellipsoidal star figures) which allows for eccentric orbit effects. The light curves show some peculiarities - particularly a large, probably intrinsic, scatter.

Wilson, R. E.↗

Photoelectrochemically Self Improving Si/GaN Photocathode: Figure 1d Raw Data

Fig1d results were obtained using a 3-electrode configuration with IrOx as the counter electrode and saturated calomel electrode as the reference electrode. Two Si/GaN photocathodes were compared. Sample #1 (named as S#1) was the as-received sample, and sample #2 (named as S#2) was CA tested for 4 hours under same testing conditions described in Fig.1a. The PEC performance (J-V curve) was recorded for both samples. Then a photodeposition of Pt was performed on both samples, each loading time was set to be 5 minutes, then the J-V curve was recorded to track the changes of the performance. The Pt photodeposition was stopped until the J-V curve won't shift (the maximum onset potential was achieved). The results show that, S#1 needs at least 20 minutes of Pt photodeposition to achieve its best PEC performance while S#2, which is after CA testing, only needs 5 minutes of Pt photodeposition to achieve its best PEC performance.

photocathode↗

Degradation mechanisms and partial shading of glass-backsheet and double-glass photovoltaic modules in three climate zones determined by remote monitoring of time-series current–voltage and power datastreams

Degradation and partial shading impact the long-term reliability and power production of photovoltaic (PV) modules and power plants. Time-series power (P mp ) and current–voltage (I-V) curve datastreams from PV modules enable a remote diagnostic approach to quantify active degradation mechanisms and identify partial shading. We study three to nine years of these datastreams, including 3.6 million P mp I-V curves and 36 million values, from eight PV modules, four each of double-glass and glass-backsheet module architectures, located in three distinctly different Köppen-Geiger climate zones, to determine the module’s performance loss rates (PLR), identify active degradation mechanisms and power loss modes, along with partial shading by local objects. Considering both module architectures, PLR results indicate that the BSh climate zone is the most aggressive for module degradation, while the Alpine ET zone is the mildest climate. PLR of double-glass modules located in BWh and BSh climate zones are different due to the significantly greater uniform current loss (ΔP Isc ) for double-glass modules in BSh, at a 5% significance level. Power loss for four out of five modules located in the BWh and BSh climates are dominated by uniform current degradation. Statistical analysis of multistep I-V curves detects partial shading experienced by three studied modules with details of the shading profile, the shading Poynting vector diagram for the obstacle’s relative position, shading scenarios, and duration. Lastly, this work demonstrates how remote monitoring and diagnosis of P mp & I-V time-series of modules can provide quantitative operations and maintenance insights into system performance, degradation mechanisms, and shading.

14 SOLAR ENERGY↗

Platinum liquid-vapor phase boundary mapped by fluid flyer experiments

We report a direct measurement of the temperature and density of a metal along its liquid-vapor coexistence (L-V) curve. By shocking platinum to a high-pressure liquid, we imparted sufficient heat for subsequent isentropic release to place it in a state on the boundary between the liquid and vapor phases. Released material in the liquid phase acted as a high velocity flyer pinned to the L-V curve. We measured velocity and radiant emission of the flyer as well as the interface motion and transiting shock states induced in a downstream window material by its impact. We used these measurements to calculate temperature and density of the L-V curve state which we compare to density functional theory predictions.

Equations of state↗

Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

Kapoor, V. J.↗