Photoelectrochemically Self Improving Si/GaN Photocathode: Figure 1d Raw Data

Abstract

Fig1d results were obtained using a 3-electrode configuration with IrOx as the counter electrode and saturated calomel electrode as the reference electrode. Two Si/GaN photocathodes were compared. Sample #1 (named as S#1) was the as-received sample, and sample #2 (named as S#2) was CA tested for 4 hours under same testing conditions described in Fig.1a. The PEC performance (J-V curve) was recorded for both samples. Then a photodeposition of Pt was performed on both samples, each loading time was set to be 5 minutes, then the J-V curve was recorded to track the changes of the performance. The Pt photodeposition was stopped until the J-V curve won't shift (the maximum onset potential was achieved). The results show that, S#1 needs at least 20 minutes of Pt photodeposition to achieve its best PEC performance while S#2, which is after CA testing, only needs 5 minutes of Pt photodeposition to achieve its best PEC performance.