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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Modulating Oxide‐Based Quantum Materials by Ion Implantation

Ion implantation has emerged as a powerful tool for manipulating and investigating oxide quantum materials, where strong electron correlations give rise to exotic phases and functionalities. This Review examines how controlled ion bombardment enables targeted modulation of structural, electronic, and magnetic properties in complex oxides. Recent advances in ion beam techniques is analyzed that provide unprecedented control over defect profiles, from point defects to extended damage cascades. In application, ion irradiation has demonstrated the ability to tune quantum phenomena including metal‐insulator transitions, magnetism, and superconductivity through selective doping, defect creation, and lattice strain. The ability to write quantum states with nanoscale precision using focused ion beams is opening new paths for quantum device fabrication. Challenges in understanding radiation damage mechanisms in strongly correlated systems is discussed, and identify opportunities for designing quantum functionality through defect‐engineering approaches. The technique's demonstrated capability to write quantum states with nanoscale precision, combined with its compatibility with existing semiconductor processing infrastructure, suggests a clear pathway for translating fundamental discoveries in quantum materials into practical technological applications.

defect engineering↗
DOE OSTI2022

A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

It has been demonstrated that basal plane dislocations (BPDs)-induced stacking faults (SFs) cause body diode degradation in commercial 4H-SiC power MOSFETs, especially with higher voltage ratings. BPDs originate from 4H-SiC boule, epi growth, and ion implantation. Considering the lower cost of ion implantation at room temperature (RT), this work investigates the potential of RT ion implantation replacing heated (HT) ion implantation by comparing the influence of both ion implantations on the body diode degradation of commercial 3.3 kV 4H-SiC power MOSFETs. We demonstrate with long-term (up to 1000 hours) forward current stress that RT implantation can keep the body diode degradation of 3.3 kV 4H-SiC power MOSFETs within the specification limits compared with HT implantation.

4H-SiC↗
DOE OSTI2022

In Situ Ion Counting for Improved Implanted Ion Error Rate and Silicon Vacancy Yield Uncertainty

An in situ counted ion implantation experiment improving the error on the number of ions required to form a single optically active silicon vacancy (SiV) defect in diamond 7-fold compared to timed implantation is presented. Here, traditional timed implantation relies on a beam current measurement followed by implantation with a preset pulse duration. It is dominated by Poisson statistics, resulting in large errors for low ion numbers. Instead, our in situ detection, measuring the ion number arriving at the substrate, results in a 2-fold improvement of the error on the ion number required to generate a single SiV compared to timed implantation. Through postimplantation analysis, the error is improved 7-fold compared to timed implantation. SiVs are detected by photoluminescence spectroscopy, and the yield of 2.98% is calculated through the photoluminescence count rate. Hanbury–Brown–Twiss interferometry is performed on locations potentially hosting single-photon emitters, confirming that 82% of the locations exhibit single photon emission statistics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1978

Production technology for high efficiency ion implanted solar cells

Ion implantation is being developed for high volume automated production of silicon solar cells. An implanter designed for solar cell processing and able to properly implant up to 300 4-inch wafers per hour is now operational. A machine to implant 180 sq m/hr of solar cell material has been designed. Implanted silicon solar cells with efficiencies exceeding 16% AM1 are now being produced and higher efficiencies are expected. Ion implantation and transient processing by pulsed electron beams are being integrated with electrostatic bonding to accomplish a simple method for large scale, low cost production of high efficiency solar cell arrays.

Kirkpatrick, A. R.↗
NASA NTRS1984

High Curie temperature drive layer materials for ion-implanted magnetic bubble devices

Ion implantation of bubble garnets can lower the Curie temperature by 70 C or more, thus limiting high temperature operation of devices with ion-implanted propagation patterns. Therefore, double-layer materials were made with a conventional 2-micron bubble storage layer capped by an ion-implantable drive layer of high Curie temperature, high magnetostriction material. Contiguous disk test patterns were implanted with varying doses of a typical triple implant. Quality of propagation was judged by quasistatic tests on 8-micron period major and minor loops. Variations of magnetization, uniaxial anisotropy, implant dose, and magnetostriction were investigated to ensure optimum flux matching, good charged wall coupling, and wide operating margins. The most successful drive layer compositions were in the systems (SmDyLuCa)3(FeSi)5O12 and (BiGdTmCa)3(FeSi)5O12 and had Curie temperatures 25-44 C higher than the storage layers.

Fratello, V. J.↗
NASA NTRS1975

Ion-probe studies of artificially implanted ions in lunar samples

The ion microprobe at the Johnson Space Center was used to study depth profiles of artificially implanted ions in lunar samples. Five polished sections of typical mare basalts (12040 and 12018) were irradiated with nine different elements at two energies and the resulting concentrations were measured as a function of depth in the minerals plagioclase, pyroxene, and ilmenite. These preliminary simulation experiments were undertaken to determine whether the ion probe can be used to measure solar-wind-implanted elements on the surface of lunar rock crystals and soil grains and to study mechanisms for the redistribution. The results obtained so far demonstrate that depth profiles can indeed be measured with the ion probe. From estimated exposure times of mature soil grains and selected vug crystals, it appears possible (if difficult) to detect several solar-wind-implanted elements.

Zinner, E.↗
DOE OSTI2019

Ion-implanted thermal barrier

Ion implantation can be used to define a thermal dissipation path that allows for better thermal isolation between devices in close proximity on a microelectronics chip, thus providing a means for higher device density combined with better performance.

42 ENGINEERING↗
DOE OSTI2025

Mapping of fracture and ionic conductivity changes in ion implanted solid electrolytes: Insights from molecular dynamics

Ion implantation emerges as a promising technique to address the persistent challenge of lithium (Li) filament growth in solid-state electrolytes as it can induce compressive stresses inhibiting crack growth and deflect dendrites, de facto mitigating early electrolyte failure. In this study, we examine the potential paradox of ion implantation: while aiming to enhance electrolyte performance, the radiation damage associated with implantation might inadvertently compromise both the ionic conductivity and the intrinsic fracture toughness of the material, rendering the material unsuitable for battery applications. Specifically, we employed molecular dynamics simulations to examine the scope of the downsides of ion implantation, specifically: (i) reduced ionic conductivity (due to radiation-induced amorphization) and (ii) mechanical stability (due to radiation-induced embrittlement) in ion-implanted Li 7 La 3 Zr 2 O 12 (LLZO) solid-state electrolytes. We explore how radiation damage impacts LLZO’s crystalline structure, Li-ion diffusion, and fracture properties at various temperatures and radiation damage levels. The study aims to provide insights into the competing effects of ion implantation and suggest potential engineering strategies for developing more robust solid-state electrolytes with improved conductivity and dendrite resistance.

Conductivity↗
NASA NTRS1972

A study of the electrical properties of p-n junctions formed by ion-implantation into gallium arsenide

In the process of ion implantation, ion beams bombard the surface and create undesirable surface effects. The surface effects were investigated, and surface leakage currents were shown to be reduced by surface treatment. I-V characteristics and C-V measurements were obtained for the Zn-GaAs and Zn-(In,Ga)As junction is considered as a p-i-n heterojunction, without generation-recombination current. The Zn-GaAs junction is considered as a p-n homojunction with appreciable generation-recombination currents.

Lin, A. H.↗
DOE OSTI2019

Tribo-corrosion and Albumin Attachment of Nitrogen Ion-Implanted CoCrMo Alloy During Friction Onset

In this paper, CoCrMo alloy surface was implanted with 100 keV nitrogen ions to modify it. Bovine serum albumin (BSA) adsorption and the initial behavior of tribo-corrosion in the simulated system were studied. Nitrogen ion implantation can promote BSA dynamic adsorption due to the change of friction and wear mechanisms. From the tribo-corrosion test results, the open circuit potential (OCP) increased to about 0.6 V and the coefficient of friction (COF) decreased to about 0.2 for the nitrogen ion-implanted CoCrMo compared with the untreated sample before the modified layer failure. The point when the open circuit potential and the coefficient of friction changed during long wear time (1, 2 and 4 h) is considered the sign of the worn through modified layer. Then, the OCP of the implanted sample rose by 0.3 V compared with the untreated sample, and the COF remained at around 0.3, which is lower compared with the COF of untreated sample after the modified layer has been worn through. Thus, nitrogen ion implantation not only improved wear and corrosion resistance of the CoCrMo alloy, but also promoted BSA adsorption on the CoCrMo alloy surface, which effectively reduced the wear volume and metal ions release.

36 MATERIALS SCIENCE↗
NASA NTRS1998

Fabrication and Characterization of Thin Film Ion Implanted Composite Materials for Integrated Nonlinear Optical Devices

Ion implantation has been shown to produce a high density of metal colloids within the layer regions of glasses and crystalline materials. The high-precipitate volume fraction and small size of metal nanoclusters formed leads to values for the third-order susceptibility much greater than those for metal doped solids. This has stimulated interest in use of ion implantation to make nonlinear optical materials. On the other side, LiNbO3 has proved to be a good material for optical waveguides produced by MeV ion implantation. Light confinement in these waveguides is produced by refractive index step difference between the implanted region and the bulk material. Implantation of LiNbO3 with MeV metal ions can therefore result into nonlinear optical waveguide structures with great potential in a variety of device applications. We describe linear and nonlinear optical properties of a waveguide structure in LiNbO3-based composite material produced by silver ion implantation in connection with mechanisms of its formation.

Sarkisov, S.↗
DOE OSTI2023

Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes

A deep-ultraviolet Al0.6Ga0.4N p–i–n avalanche photodiode (APD) structure was grown on a (0001) AlN bulk substrate by metalorganic chemical vapor deposition. The wafer was fabricated into 20 μm diameter mesa APD devices both with and without ion-implantation with nitrogen ions on the periphery of the p-type region of the diode mesa and tested. The dark current density vs bias, photoresponse, and the optical gain of the APDs with and without ion implantation were compared. The devices fabricated with ion implantation showed improved performance, exhibiting lower dark current densities of ∼1 × 10−9 A/cm2 and a higher optical gain of ∼5.2 × 105 at a current density limit of 0.3 A/cm2. The average temperature coefficients of the reverse-bias breakdown voltage were also compared. Although the data showed negative coefficients for APDs fabricated both with and without ion implantation, the ion-implanted APDs showed an improvement relative to the devices fabricated without ion-implantation.

Physics↗
NASA NTRS1977

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

Progress in developing the application of ion implantation techniques to silicon gate CMOS/SOS processing is described. All of the conventional doping techniques such as in situ doping of the epi-film and diffusion by means of doped oxides are replaced by ion implantation. Various devices and process parameters are characterized to generate an optimum process by the use of an existing SOS test array. As a result, excellent circuit performance is achieved. A general description of the all ion implantation process is presented.

Woo, D. S.↗
NASA NTRS1988

Photoreflectance Study of Boron Ion-Implanted (100) Cadmium Telluride

Ion implanted (100) cadmium telluride was studied using the contactless technique of photoreflectance. The implantations were performed using 50- to 400-keV boron ions to a maximum dosage of 1.5 x 10(16)/sq cm, and the annealing was accomplished at 500 C under vacuum. The spectral measurements were made at 77 K near the E(0) and E(1) critical points; all the spectra were computer-fitted to Aspnes' theory. The spectral line shapes from the ion damaged, partially recovered and undamaged, or fully recovered regions could be identified, and the respective volume fraction of each phase was estimated.

Amirtharaj, P. M.↗