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Results for “Integer quantum hall effect”

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At least 19 records

Integer quantum Hall effect and enhanced g factor in quantum-confined Cd 3 As 2 films

Here, we investigate the integer quantum Hall effect in Cd 3 ⁢As 2 thin films under conditions of strong to moderate quantum confinement (thicknesses of 10, 12, and 15 nm). In all the films, we observe the integer quantum Hall effect in the spin-polarized lowest Landau level (filling factor v = 1) and at spin-degenerate higher index Landau levels with even filling factors (v = 2,4,6). With increasing quantum confinement, we also observe a lifting of the Landau-level spin degeneracy at v = 3, manifest as the emergence of an anomaly in the longitudinal and Hall resistivities. Tight-binding calculations show that the enhanced g factor likely arises from a combination of quantum confinement and corrections from nearby subbands.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Breakdown of the $v=1$ integer quantum Hall effect in the single particle and collective localization regimes

We report large signal current–voltage characteristics measurements near the $v=1$ integer quantum Hall plateau in a high mobility GaAs/AlGaAs sample that exhibits both single particle and collective localization. According to prior results, the central part of the $v=1$ plateau corresponds to single particle localization and hence an Anderson insulator. In contrast, the two regions in the flanks of this Anderson insulator were associated with collective localization and were identified with the integer quantum Hall Wigner solid. We find that, at low temperatures and under large bias currents, both the Anderson insulator and integer quantum Hall Wigner solid have a sharp onset of conduction above a threshold. Furthermore, this threshold shows an approximately monotonic dependence on the filling factor across the boundary between the two localized phases. Finally, to our surprise, we find that these large signal characteristics do not clearly distinguish between the Anderson insulator and the integer quantum Hall Wigner solid.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Composite fermion nonlinear sigma models

We study particle-hole symmetry at the integer quantum Hall plateau transition using composite fermion mean-field theory. Because this theory implicitly includes some electron-electron interactions, it also has applications to certain fractional quantum Hall plateau transitions. Previous work [P. Kumar et al., Phys. Rev. B 100, 235124 (2019)] using this approach showed that the diffusive quantum criticality of this transition is described by a nonlinear sigma model with topological θ = π term. This result, which holds for both the Dirac and Halperin, Lee, and Read composite fermion theories, signifies an emergent particle-hole (reflection) symmetry of the integer (fractional) quantum Hall transition. Here we consider the stability of this result to various particle-hole symmetry-violating perturbations. In the presence of quenched disorder that preserves particle-hole symmetry, we find that finite longitudinal conductivity at this transition requires the vanishing of a symmetry-violating composite fermion effective mass, which if present would generally lead to θ ≠ π and a corresponding violation of particle-hole symmetric electrical transport σ xy ≠ $\frac1{2}$$\frac{e^2}{h}$ . When the disorder does not preserve particle-hole symmetry, we find that θ can vary continuously within the diffusive regime. Our results call for further study of the universality of the quantum Hall plateau transition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: The case of topological half-Heusler Pt 1 - x Au x LuSb

We report that topological materials often exhibit remarkably linear nonsaturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically nontrivial states in the emergence of such a behavior has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers, we controllably tune the LMR behavior in Pt 1-x Au x LuSb into distinct plateaus in Hall resistance, which we show arise from a quantum Hall phase. This allowed us to reveal how smearing of the Landau levels, which otherwise gives rise to a quantum Hall phase, results in an LMR behavior due to strong interaction between the TSS with a positive g factor and the bulk carriers. We establish that controlling the coupling strength between the surface and the bulk carriers in topological materials can bring about dramatic changes in their magnetotransport behavior. In addition, our work outlines a strategy to reveal macroscopic physical observables of TSS in compounds with a semimetallic bulk band structure, as is the case in multifunctional Heusler compounds, thereby opening up opportunities for their utilization in hybrid quantum structures.

36 MATERIALS SCIENCE↗

Quantum criticality in coupled hybrid metal-semiconductor islands

We show that the combined effects of a dynamical Coulomb blockade and integer quantum Hall effect in a coupled hybrid metal-semiconductor setup provide a pathway for realizing resonant tunneling in Luttinger liquids. This hybrid setup can be brought to the quantum critical regime by varying gate voltages and contact resistances. We explore the nature of quantum criticality, Kondo effect, charge fractionalization, and transport in such a hybrid setup, and verify their robust non-Fermi-liquid behaviors. In conclusion, our work opens a promising route for quantum simulating exotic zero-temperature quantum critical phenomena associated with Luttinger-liquid physics in a nanoengineered electronic circuit with well-defined quantum Hall channels.

Coulomb blockade↗

Composite anyons on a torus

An adiabatic approach put forward by Greiter and Wilczek interpolates between the integer quantum Hall effects of electrons and composite fermions by varying the statistical flux bound to electrons continuously from zero to an even integer number of flux quanta, such that the intermediate states represent anyons in an external magnetic field with the same “effective” integer filling factor. We consider such anyons on a torus, and construct representative wave functions for their ground as well as excited states. These wave functions involve higher Landau levels in general, but can be explicitly projected into the lowest Landau level for many parameters. We calculate the variational energy gap between the first excited state and ground state and find that it remains open as the statistical phase is varied. Lastly, we obtain from these wave functions, both analytically and numerically, various topological quantities, such as ground-state degeneracy, the Chern number, and the Hall viscosity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Challenges to magnetic doping of thin films of the Dirac semimetal Cd 3 As 2

Magnetic doping of topological quantum materials provides an attractive route for studying the effects of time-reversal symmetry breaking. Thus motivated, we explore the introduction of the transition metal Mn into thin films of the Dirac semimetal Cd 3 A s2 during growth by molecular beam epitaxy. Scanning transmission electron microscopy measurements show the formation of a Mn-rich phase at the top surface of Mn-doped Cd 3 A s2 thin films grown using both uniform doping and delta doping. This suggests that Mn acts as a surfactant during epitaxial growth of Cd 3 A s2 , resulting in phase separation. Magnetometry measurements of such samples indicate a ferromagnetic phase with out-of-plane magnetic anisotropy. Electrical magneto-transport measurements of these films as a function of temperature, magnetic field, and chemical potential reveal a lower carrier density and higher electron mobility compared with pristine Cd 3 A s2 films grown under similar conditions. This suggests that the surfactant effect might also serve to remove impurities from the bulk of the film. Further, we observe robust quantum transport (Shubnikov-de Haas oscillations and an incipient integer quantum Hall effect) in very thin (7 nm) Cd 3 A s2 films despite being in direct contact with a structurally disordered surface ferromagnetic overlayer.

36 MATERIALS SCIENCE↗

Anderson Localization in the Fractional Quantum Hall Effect

The interplay between interaction and disorder-induced localization is of fundamental interest. This article addresses localization physics in the fractional quantum Hall state, where both interaction and disorder have nonperturbative consequences. We provide compelling theoretical evidence that the localization of a single quasiparticle of the fractional quantum Hall state at filling factor ν=n/(2n+1) has a striking quantitative correspondence to the localization of a single electron in the (n+1)th Landau level. By analogy to the dramatic experimental manifestations of Anderson localization in integer quantum Hall effect, this leads to predictions in the fractional quantum Hall regime regarding the existence of extended states at a critical energy, and the nature of the divergence of the localization length as this energy is approached. Within a mean field approximation, these results can be extended to situations where a finite density of quasiparticles is present.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Signatures of fractional quantum anomalous Hall states in twisted MoTe 2

The interplay between spontaneous symmetry breaking and topology can result in exotic quantum states of matter. A celebrated example is the quantum anomalous Hall (QAH) state, which exhibits an integer quantum Hall effect at zero magnetic field owing to intrinsic ferromagnetism. In the presence of strong electron–electron interactions, fractional QAH (FQAH) states at zero magnetic field can emerge. These states could host fractional excitations, including non-Abelian anyons—crucial building blocks for topological quantum computation9. Here we report experimental signatures of FQAH states in a twisted molybdenum ditelluride (MoTe 2 ) bilayer. Magnetic circular dichroism measurements reveal robust ferromagnetic states at fractionally hole-filled moiré minibands. Using trion photoluminescence as a sensor, we obtain a Landau fan diagram showing linear shifts in carrier densities corresponding to filling factor v = −2/3 and v = −3/5 ferromagnetic states with applied magnetic field. These shifts match the Streda formula dispersion of FQAH states with fractionally quantized Hall conductance of ${\sigma }_{xy}=-\,\frac{2}{3}\frac{{e}^{2}}{h}$ and ${\sigma }_{xy}=-\,\frac{3}{5}\frac{{e}^{2}}{h}$ , respectively. Moreover, the v = −1 state exhibits a dispersion corresponding to Chern number −1, consistent with the predicted QAH state. In comparison, several non-ferromagnetic states on the electron-doping side do not disperse, that is, they are trivial correlated insulators. The observed topological states can be electrically driven into topologically trivial states. Our findings provide evidence of the long-sought FQAH states, demonstrating MoTe 2 moiré superlattices as a platform for exploring fractional excitations.

Quantum Hall↗

Thickness-independent transport in thin (001)-oriented cadmium arsenide films

The three-dimensional Dirac semimetal is a parent phase for a variety of topological phases that can be generated by tuning parameters in material growth or device operation. Notably, it has recently been found that cadmium arsenide, which is ordinarily a three-dimensional Dirac semimetal, can nevertheless realize a three-dimensional topological insulator in (001)-oriented films about 50-nm thick. In this work, we study the quantum Hall effect in thin (001)-oriented cadmium arsenide films, their thickness ranging from 12 to 24 nm. When the carrier density is kept approximately constant across the different films, quantum transport reveals an identical underlying picture. The result is shown to be consistent with the transport's origin in the surface states of a three-dimensional topological insulator, but problematic for a perspective in which the quantum Hall effect originates from the confined subbands of the bulk band structure. As a result, these thin-film results complement previous studies of the quantum Hall effect in 50-nm-thick films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Role of the third dimension in searching for Majorana fermions in α-RuCl 3 via phonons

Understanding phonons in α-RuCl 3 is critical to analyze the controversy around the observation of the half-integer thermal quantum Hall effect. While many studies have focused on the magnetic excitations in α-RuCl 3 , its vibrational excitation spectrum has remained relatively unexplored. We investigate the phonon structure of α-RuCl 3 via inelastic neutron-scattering experiments and density-functional-theory calculations. Our results show excellent agreement between experiment and first-principles calculations. After validating our theoretical model, we extrapolate the low-energy phonon properties. We find that the phonons in α-RuCl 3 that either propagate or vibrate in the out-of-plane direction have significantly reduced velocities and therefore have the potential to dominate the observability of the elusive half-integer plateaus in the thermal Hall conductance. In addition, we use low-energy interlayer phonons to resolve the low-temperature stacking structure of our large crystal of α-RuCl 3 , which we find to be consistent with that of the R$\bar{3}$ space group, in agreement with neutron diffraction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Density Dependence of the Phases of the v = 1 Integer Quantum Hall Plateau in Low Disorder Electron Gases

Recent magnetotransport measurements in low-disorder electron systems confined to GaAs/AlGaAs samples reveal that the v = 1 integer quantum Hall plateau is broken into three distinct regions. These three regions are associated with two phases with different types of bulk localization: the Anderson insulator is due to random quasiparticle localization, and the integer quantum Hall Wigner solid is due to pinning of a stiff quasiparticle lattice. Universal properties of the v = 1 plateau are highlighted: the structure of the stability diagram, the nonmonotonic dependence of the activation energy on the filling factor, and the alignment of features of the activation energy with features of the stability regions of the different phases are found to be similar in three samples spanning a wide range of electron densities. Quantitative differences between the samples are also discussed, such as the dependence of the onset temperature and the activation energy of the integer quantum Hall Wigner solid on the electron density. The findings provide insights into the localization behavior along the v = 1 integer quantum Hall plateau in the low disorder regime.

Anderson insulator↗

Induced Superconducting Pairing in Integer Quantum Hall Edge States

Indium arsenide (InAs) near surface quantum wells (QWs) are promising for the fabrication of semiconductor–superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional states in the quantum well and the ones in the superconductor. In this work, we present results for InAs QWs in the quantum Hall regime placed in proximity of superconducting NbTiN. We observe a negative downstream resistance with a corresponding reduction of Hall (upstream) resistance, consistent with a very high Andreev conversion. Further, we analyze the experimental data using the Landauer-Büttiker formalism, generalized to allow for Andreev reflection processes. We attribute the high efficiency of Andreev conversion in our devices to the large transparency of the InAs/NbTiN interface and the consequent strong hybridization of the QH edge modes with the states in the superconductor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Moiré-driven topological electronic crystals in twisted graphene

In a dilute two-dimensional electron gas, Coulomb interactions can stabilize the formation of a Wigner crystal. Although Wigner crystals are topologically trivial, it has been predicted that electrons in a partially filled band can break continuous translational symmetry and time-reversal symmetry spontaneously, resulting in a type of topological electron crystal known as an anomalous Hall crystal. Here we report signatures of a generalized version of the anomalous Hall crystal in twisted bilayer–trilayer graphene, whose formation is driven by the moiré potential. The crystal forms at a band filling of one electron per four moiré unit cells (ν = 1/4) and quadruples the unit-cell area, coinciding with an integer quantum anomalous Hall effect. The Chern number of the state is exceptionally tunable, and it can be switched reversibly between +1 and −1 by electric and magnetic fields. Several other topological electronic crystals arise in a modest magnetic field, originating from ν = 1/3, 1/2, 2/3 and 3/2. As a result, the quantum geometry of the interaction-modified bands is likely to be very different from that of the original parent band, which enables possible future discoveries of correlation-driven topological phenomena.

Electronic properties and materials↗

Scar states in a system of interacting chiral fermions

Here, we study the nature of many-body eigenstates of a system of interacting chiral spinless fermions on a ring. We find a coexistence of fermionic and bosonic types of eigenstates in parts of the many-body spectrum. Some bosonic eigenstates, native to the strong interaction limit, persist at intermediate and weak couplings, enabling persistent density oscillations in the system, despite it being far from integrability.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Classification of (2 + 1) D invertible fermionic topological phases with symmetry

Here we provide a classification of invertible topological phases of interacting fermions with symmetry in two spatial dimensions for general fermionic symmetry groups G f and general values of the chiral central charge c - . Here G f is a central extension of a bosonic symmetry group G b by fermion parity, (-1) F , specified by a second cohomology class [ω 2 ]∈ $\mathscr{H}^2$(Gb,$\mathbb{Z}_2$). Our approach proceeds by gauging fermion parity and classifying the resulting G b symmetry-enriched topological orders while keeping track of certain additional data and constraints. We perform this analysis through two perspectives, using G-crossed braided tensor categories and Spin(2c - ) 1 Chern-Simons theory coupled to a background G gauge field. These results give a way to characterize and classify invertible fermionic topological phases in terms of a concrete set of data and consistency equations, which is more physically transparent and computationally simpler than the more abstract methods using cobordism theory and spectral sequences. Our results also generalize and provide a different approach to the recent classification of fermionic symmetry-protected topological phases by Wang and Gu, which have chiral central charge c - = 0. We show how the tenfold way classification of topological insulators and superconductors fits into our scheme, along with general nonperturbative constraints due to certain choices of c - and G f . Mathematically, our results also suggest an explicit general parametrization of deformation classes of (2 + 1)D invertible topological quantum field theories with G f symmetry.

36 MATERIALS SCIENCE↗

Spectral Function of the Chiral One-Dimensional Fermi Liquid in the Regime of Strong Interactions

We study momentum-resolved tunneling into a system of spinless chiral one-dimensional fermions, such as electrons at the edge of an integer quantum Hall system. Interactions between particles give rise to broadening of the spectral function of the system. We develop an approach that enables one to obtain the shape of the peak in the spectral function in the regime of strong interaction. We apply our technique to the special cases of short-range and Coulomb interactions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗