Search NASA⌕ Search

SEARCH · Search NASA

Results for “Junction Temperature Sensing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records

Real-time Condition Monitoring of Power Modules in Grid-tied Power Converter

This paper proposes and demonstrates a real-time condition monitoring method using gate driver integrated sensing circuits and sensor fusion algorithms. Power device on-state voltage (VDSon) measurement and junction temperature (Tj) sensing circuits with high noise immunity are built and integrated into an adaptive gate driver circuit for power modules. Considering the inherently noisy measurement environment of power converters, VDSon together with several other measurements are fused together to provide accurate descriptions of the stress and degradation of each power device. Furthermore, the gate driver circuit can actively control the turn-on gate voltage (VGSon) for each device based on the stress and degradation state. The proposed sensing circuits and power device condition assessment algorithms are implemented in a 75 KVA grid-tied power converter. This paper focuses on the sensing circuits hardware designs and testing in grid-tied power converter prototype and device stress index generation. More comprehensive results on the device state of health index generation will be presented in future work.

Fan, Junchong↗

PV Inverter Systems Enabled by Monolithically Integrated SiC based Four Quadrant Power Switch (4-QPS) [BiDFET]

The purpose of this project was to develop a new breed of Power Conversion Systems (PCS) for PV integration that is enabled by the newly developed 4-Quadrant Single Die SiC Power Semiconductor Switches (4-QPS) or also referred to as “Bidirectional FET (BIDFET)”. This work includes semiconductor die development, advanced packaging, converter design, development, and testing of 4-QPS enabled hardware prototypes at 1 kW (for single phase residential application) and 10 kW (for three phase commercial application). The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Detection of high energy ionizing radiation using deeply depleted graphene–oxide–semiconductor junctions

Graphene’s linear band structure and two-dimensional density of states provide an implicit advantage for sensing charge. Here, these advantages are leveraged in a deeply depleted graphene–oxide–semiconductor (D2GOS) junction detector architecture to sense carriers created by ionizing radiation. Specifically, the room temperature response of a silicon-based D2GOS junction is analyzed during irradiation with 20 MeV Si4+ ions. Detection was demonstrated for doses ranging from 12 to 1200 ions with device functionality maintained with no substantive degradation. To understand the device response, D2GOS pixels were characterized post-irradiation via a combination of electrical characterization, Raman spectroscopy, and photocurrent mapping. This combined characterization methodology underscores the lack of discernible damage caused by irradiation to the graphene while highlighting the nature of interactions between the incident ions and the silicon absorber.

Ruiz, Isaac↗

On-chip sensing of hotspots in superconducting terahertz emitters

Intrinsic Josephson junctions in high-temperature superconductor Bi 2 Sr 2 CaCu 2 O 8+δ (BSCCO) are known for their capability to emit high-power terahertz photons with widely tunable frequencies. Hotspots, as inhomogeneous temperature distributions across the junctions, are believed to play a critical role in synchronizing the gauge-invariant phase difference among the junctions, so as to achieve coherent strong emission. In this paper, we demonstrate an on-chip in situ sensing technique that can characterize hotspot distributions on BSCCO. This is achieved by fabricating a series of micro-nanosized "sensor" junctions on top of an "emitter" junction and measuring the critical current on the sensors versus the bias current applied to the emitter. Furthermore, this fully electronic on-chip design can enable efficient close-loop control of hotspots in BSCCO junctions and significantly enhance the functionality of superconducting terahertz emitters.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

FET Junction Temperature Monitoring Using Novel On-Chip Solution

A novel junction temperature monitoring sensor is proposed and experimentally demonstrated for application in MOS-gate power devices. The sensor is created using the polycide gate electrode layer of the devices to create a temperature-sensitive resistor without any additional fabrication steps. The resistor is located on the field oxide with one end grounded at the device reference terminal to isolate it from the device current and voltage transients. It allows in-situ monitoring of the device junction temperature during active circuit operation. The technology has been implemented to monitor the junction temperature of Silicon Carbide Junction Barrier Schottky Field Effect Transistors (SiC JBSFETs) with the bi-directional FET (BiDFET).

Bidirectional switches, SiC bidirectional FET, BiD↗

An "Inefficient Fin" Non-Dimensional Parameter to Measure Gas Temperatures Efficiently

A gas containment vessel that is not in thermal equilibrium with the bulk gas can affect its temperature measurement. The physical nature of many gas dynamics experiments often makes the accurate measurement of temperature a challenge. The environment itself typically requires that the thermocouple be sheathed, both to protect the wires and hot junction of the instrument from their environment, and to provide a smooth, rigid surface for pressure sealing of the enclosure. However, that enclosure may also be much colder than the gas to be sensed, or vice-versa. Either way, the effect of such gradients is to potentially skew the temperature measurements themselves, since heat may then be conducted by the instrument. Thermocouple designers traditionally address this problem by insulating the sheath from the thermocouple leads and hot junction as much as possible. The thermocouple leads are typically packed in a ceramic powder inside the sheath, protecting them somewhat from temperature gradients along the sheath, but there is no effective mechanism to shield the sheath from the enclosure body itself. Standard practice dictates that thermocouples be used in installations that do not present large thermal gradients along the probe. If this conduction dominates heat transfer near the tip of the probe, then temperature measurements may be expected to be skewed. While the same problem may be experienced in the measurement of temperature at various points within a solid in a gradient, it tends to be aggravated in the measurements of gas temperature, since heat transfer dependent on convection is often less efficient than conduction along the thermocouple. The proposed solution is an inefficient fin thermocouple probe. Conventional wisdom suggests that in many experiments where gas flows through an enclosure (e.g., flow in pipe, manifold, nozzle, etc.), the thermocouple be introduced flush to the surface, so as not to interfere with the flow. In practice, however, many such experiments take place where the flow is already turbulent, so that a protruding thermocouple probe has a negligible effect on the flow characteristics. The key question then becomes just how far into the flow should a thermocouple protrude in order to properly sense the gas temperature at that point. Modeling the thermocouple as an "inefficient fin" directly addresses this question. The appropriate assumptions in this case are: one-dimensional conduction along the fin; steady-state, constant, and homogeneous thermal conductivity; negligible radiation; and a uniform, constant heat transfer coefficient over the probe surface. It is noted that the nature of the ceramic-filled probe makes the key assumption of homogeneous thermal conductivity that much more conservative.

Lemieux, Patrick↗

Thermocouple, multiple junction reference oven

An improved oven for maintaining the junctions of a plurality of reference thermocouples at a common and constant temperature is described. The oven is characterized by a cylindrical body defining a heat sink with axially extended-cylindrical cavity a singularized heating element which comprises a unitary cylindrical heating element consisting of a resistance heating coil wound about the surface of metallic spool with an axial bore defined and seated in the cavity. Other features of the oven include an annular array of radially extended bores defined in the cylindrical body and a plurality of reference thermocouple junctions seated in the bores in uniformly spaced relation with the heating element, and a temperature sensing device seated in the axial bore for detecting temperature changes as they occur in the spool and circuit to apply a voltage across the coil in response to detected drops in temperatures of the spool.

Leblanc, L. P.↗

In situ temperature measurement of a deforming interface with thermoelectricity

Accurate temperature measurement is critical to understanding the thermomechanical conditions and microstructural evolution that materials experience during severe plastic deformation (SPD). Others have previously measured the interface between a non-deforming tool and metal workpiece using thermocouples, infrared measurement, and the thermoelectric principle. Measuring temperature within the deforming material itself, especially at a high-shear deforming interface, has proven to be extremely difficult, thus limiting the application of these measurements to fundamental SPD research. In this study, the thermoelectric principle is used to directly measure temperature at the interface between copper and nickel billets undergoing SPD. This is done by utilizing the deforming materials themselves as two halves of a thermocouple junction. The spatial resolution of this measurement is shown via microscopy to be less than 1 micron. Temperature changes are sensed almost instantly, with time delays on the order of the data logger frequency (0.01 seconds). Process variations that are both very brief (<0.05 seconds) and minute (<3°C) are able to be detected by this method.

Taysom, Brandon Scott↗

A Conjugated Oligoelectrolyte Exhibiting Room Temperature Spin-Correlated Radical Pair Character for Biological Sensing

We report a water-soluble conjugated oligoelectrolyte (COE) composed of carbazole-benzophenone, COE-CbzBP, that exhibits photogenerated spin-correlated radical pair (SCRP) behavior sensitive to static electric fields from DNA but not from lipid bilayers. The SCRP forms from a thermally activated, spin-polarized state enabled by partial π-conjugation disruption at the donor–acceptor (carbazole-benzophenone) nitrogen–carbon (N–C) junction, which facilitates a twisted intramolecular charge-transfer (TICT) geometry. This state minimizes the singlet–triplet energy gap (ΔE ST = 0.12 eV), radical–pair exchange coupling (J RP ∼ ΔE ST /2), and charge separation free energy (ΔG CS ) in both DNA (−0.19 eV) and lipid bilayers (−0.55 eV). Room-temperature continuous-wave electron paramagnetic resonance (CW-EPR) reveals a photogenerated spin-polarized singlet for COE-CbzBP that splits upon DNA association, consistent with modulation of J RP and hyperfine coupling (A x ), presumably via electric field-spin coupling. No spin-polarized signal was observed under dark, cryogenic conditions, or in liposomes, but was quenched by the spin trap 4-POBN. Transient absorption and spectroelectrochemistry confirmed magnetic-field sensitive long-lived excited-state absorption features attributed to charge-separated states 3 [Cbz •+ -BP •– ]*, which were lengthened by DNA, and quenched in lipid bilayers and 4-POBN. Quantum chemical simulations show that planar geometries (lipid-like) increase ΔE ST by 0.31 eV compared to TICT-optimized structures. This geometry-dependent modulation explains the absence of SCRP signatures in rigid environments, underscoring the importance of TICT states, minimized ΔE ST , and favorable ΔG CS for achieving room-temperature SCRP generation. These findings establish design principles for TICT-enabled molecules exhibiting qubit-like behavior that operate under ambient and biologically relevant conditions, with direct implications for quantum information science (QIS).

Aromatic compounds↗

Method and apparatus for measuring temperatures in fabrics and flexible thermal insulations

A temperature sensor uses a type R thermocouple wire element in a ceramic sheath to sense temperatures up to 3,200 deg F., and is particularly suitable for flexible insulations. The sensor includes a thermocouple wire embedded in a sheath having two sections disposed at right angles to each other. The junction of the thermocouple is located at one end of one of the sections and the lead wires extend from the other section. The section which includes the junction is secured to a flexible surface with ceramic cement.

Kourtides, Demetrius A.↗

Observation of surface states on gold films by electron tunneling spectroscopy

It is pointed out that inelastic electron tunneling spectroscopy (IETS) is a useful technique for the study of vibrational modes of molecules adsorbed on the surface of the insulating layer in a metal-insulator-metal tunnel junction. A detailed study of electron tunneling in aluminum-aluminum oxide-gold (Al-Al2O3-Au) tunnel junctions has been conducted with an overall goal of exploring possible mechanisms in such a thin film device useful for chemical sensing. For an understanding of the electronic effects in the presence of chemicals in a junction, the electronic surface properties of the metallic films in a clean tunnel junction must be established. The present investigation is concerned with room temperature observations of electronic states on the surface of highly oriented gold film in Al-Al2O3-Au junctions.

Lambe, J.↗

Sensing and Control During Bulk SPP

In this work, we use the thermoelectricity to directly measure the temperature at different radial positions within instrumented Al1100 billets during friction extrusion. Site-specific and uninterrupted temperature measurements were possible by measuring the local voltages at several thermoelectric junctions consisting of aluminum-nickel pairs during extrusion. Measurements were conducted for a constant die rotation speed of 150 RPM and different extrusion feed rates of 2, 8, 32, and 80 mm.min-1. X-ray computed tomography was used to locate the positions of the thermoelectric junctions inside the processed billet, thus allowing for site-specific microstructural characterization at the precise measurement points. Smooth particle hydrodynamic modeling allowed to determine the thermal, strain, and strain rate fields developing during FE. The applicability and limitations of this temperature measurement approach are discussed as a function of the peak extrusion and torsion stresses relative to the matrix of extrusion feed rates.

42 ENGINEERING↗

Measuring cryogenic-refrigerator cooling capacity

Temperature-sensing bridge determines liquid reserve level in low-temperature heat exchanger. Device should be of interest to manufacturers of cryogenic refrigerators as well as to those who use them in conjunction with operation of electronic equipment like masers or Josephson junctions.

Wiebe, E. R.↗

Ultrasensitive Photothermal Spectroscopy: Harnessing the Seebeck Effect for Attogram-Level Detection

Molecular-level spectroscopy is crucial for sensing and imaging applications, yet detecting and quantifying minuscule quantities of chemicals remain a challenge, especially when they surface adsorb in low numbers. Here, we introduce a photothermal spectroscopic technique that enables the high selectivity sensing of adsorbates with an attogram detection limit. Our approach utilizes the Seebeck effect in a microfabricated nanoscale thermocouple junction, incorporated into the apex of a microcantilever. We observe minimal thermal mass exhibited by the sensor, which maintains exceptional thermal insulation. The temperature variation driving the thermoelectric junction arises from the nonradiative decay of molecular adsorbates’ vibrational states on the tip. We demonstrate the detection of photothermal spectra of physisorbed trinitrotoluene (TNT) and dimethyl methylphosphonate (DMMP) molecules, as well as representative polymers, with an estimated mass of 10 -18 g.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A 100-Mrad (Si) JFET-based Sensing and Communications System for Extreme Nuclear Instrumentation Environments

Dry cask storage is one of two storage methods approved by the U.S. Nuclear Regulatory Commission for spent fuel after removal from reactor cores. Dry casks consist of a stainless steel canister enclosed in a concrete overpack to contain the hazardous radioactive spent fuel rods and provide radiation shielding. Monitoring spent fuel storage casks is desired to ensure the safe containment of the enclosed spent fuel, but is very difficult due to the related harsh temperature and radiation environment. The sensors and associated electronics to monitor temperature, pressure, and/or radiation need to survive high temperatures and radiation doses for extended time periods. For this reason, there is a severe need for radiation-hardened electrical systems that survive well beyond the existing capabilities of commercially available radiation-rated electronic components, which have primarily been developed for space applications. Junction-gate field-effect transistor (JFET) devices are inherently radiation hardened [exceeding 100 Mrad (Si)]. Additionally, when JFETs are used as building blocks for sensing and communication electronics (i.e., oscillators, amplifiers, filters, and mixers), inherently radiation-hardened circuits can be achieved. To this end, JFET-based radiation-hardened electronics interfacing with cask-embedded sensors capable of driving modulated sensor signals through a stainless steel barrier were designed and tested at a dose rate of approximately 500 krad/h (Si) to beyond a 200-Mrad (Si) total ionizing dose. After 200 Mrad (Si), the sensor and communication circuit signals were correctly decoded at the receiver despite oscillator drift. The results from this experiment demonstrate the potential for creating more complex radiation-hardened JFET-based electrical systems for nuclear environments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Millimeter-Wave Superconducting Qubit

Manipulating the electromagnetic spectrum at the single-photon level is fundamental for quantum experiments. In the visible and infrared ranges, this can be accomplished with atomic quantum emitters, and with superconducting qubits such control is extended to the microwave range (below 10 GHz). Meanwhile, the region between these two energy ranges presents an unexplored opportunity for innovation. We bridge this gap by scaling up a superconducting qubit to the millimeter-wave range (near 100 GHz). Working in this energy range greatly reduces sensitivity to thermal noise compared to microwave devices, enabling operation at significantly higher temperatures, up to 1 K. This has many advantages by removing the dependence on rare 3⁢ He for refrigeration, simplifying cryogenic systems, and providing orders-of-magnitude higher cooling power, lending the flexibility needed for novel quantum sensing and hybrid experiments. Using low-loss niobium trilayer junctions, we realize a qubit at 72 GHz cooled to 0.87 K using only 4 ⁢He. We perform Rabi oscillations to establish control over the qubit state, and measure relaxation and dephasing times of 15.8 and 17.4 ns, respectively. This demonstration of a millimeter-wave quantum emitter offers exciting prospects for enhanced sensitivity thresholds in high-frequency photon detection, provides new options for quantum transduction and for scaling up and speeding up quantum computing, enables integration of quantum systems where 3 ⁢He refrigeration units are impractical, and, importantly, paves the way for quantum experiments exploring a novel energy range.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Nanoscale Metal Oxide Semiconductors for Gas Sensing

A report describes the fabrication and testing of nanoscale metal oxide semiconductors (MOSs) for gas and chemical sensing. This document examines the relationship between processing approaches and resulting sensor behavior. This is a core question related to a range of applications of nanotechnology and a number of different synthesis methods are discussed: thermal evaporation- condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed, providing a processing overview to developers of nanotechnology- based systems. The results of a significant amount of testing and comparison are also described. A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. The TECsynthesized single-crystal nanowires offer uniform crystal surfaces, resistance to sintering, and their synthesis may be done apart from the substrate. The TECproduced nanowire response is very low, even at the operating temperature of 200 C. In contrast, the electrospun polycrystalline nanofiber response is high, suggesting that junction potentials are superior to a continuous surface depletion layer as a transduction mechanism for chemisorption. Using a catalyst deposited upon the surface in the form of nanoparticles yields dramatic gains in sensitivity for both nanostructured, one-dimensional forms. For the nanowire materials, the response magnitude and response rate uniformly increase with increasing operating temperature. Such changes are interpreted in terms of accelerated surface diffusional processes, yielding greater access to chemisorbed oxygen species and faster dissociative chemisorption, respectively. Regardless of operating temperature, sensitivity of the nanofibers is a factor of 10 to 100 greater than that of nanowires with the same catalyst for the same test condition. In summary, nanostructure appears critical to governing the reactivity, as measured by electrical resistance of these SnO2 nanomaterials towards reducing gases. With regard to the sensitivity of the different nascent nanostructures, the electrospun nanofibers appear preferable

Hunter, Gary W.↗

Quantum sensing using a qubit for the detection of ionizing radiation

Quantum sensing utilizes the inherent sensitivity of a quantum system to external stimuli. Our goal is to leverage this sensitivity to develop a quantum sensor designed for the detection of ionizing radiation. Here we report on the design, fabrication, and measurement of a new quantum device for hard x-ray and gamma-ray detection. Our quantum device is based on a superconducting quantum bit (qubit) with superconducting tunnel junctions as the core device elements. We describe our experimental investigation directed toward the detection metrics of energy resolution, dynamic range, and active area. In contrast to existing superconducting detectors, the active area per qubit may be much larger than the physical area of the tunnel junctions or the physical area of the qubit device, due to the sensitivity of quantum coherence to ionizing radiation deposition within a radius on the millimeter or centimeter scale. Furthermore, our experimental design enables an ionizing radiation source at room temperature to be detected by our quantum sensor at low temperature.

qubit↗