Gallium Nitride and Related Materials - Device Processing and Materials Characterization for Power Electronics Applications
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Armstrong, Andrew Michael [Sandia National Laborat↗
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Design & Assembly of Atomically-Precise Quantum Materials & Devices (Final Report)
Atomic-layer honeycomb materials (Xene, where “X” may stand for a number of different elements) are a promising platform for new quantum states. When X is a heavier element such as tin (Sn) or bismuth (Bi), the edges of the honeycomb may conduct electron charge or spin without resistance - an effect that could persist up to room temperature in some cases. The type of edge states, and their robustness at room temperature, depend sensitively on (a) the substrate material that the Xene is sitting on; (b) out-of-plane buckling of the honeycomb structure; (c) the pattern of atoms or molecules sitting atop the honeycomb. This sensitivity suggests that Xene edge states could be tuned and rearranged to construct nanoscale electronic or spintronic devices. We report on theoretical progress in modeling the assembly and structure of Xenes, and their underlying substrates and overlaying atoms. Specifically, we model the stability of Sn atoms forming a single atomic layer (“stanene”), the stability and phase transitions
36 MATERIALS SCIENCE↗
Advances in bioelectronics: Materials, devices, and translational applications
Modern electronics and materials science are bringing revolutionary advances to biointerface design and are shattering the limits of what is possible in the areas of biomedical diagnostics and sensing, neuroscience, and prosthetics. Furthermore, this special issue highlights the rapid progress in all areas of bioelectronics and includes contributions that explore the interfaces between electronics, materials science, and other engineering disciplines, as well as biochemistry, biophysics, and general biology.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
ECRAM Materials, Devices, Circuits and Architectures: A Perspective
Abstract Non‐von‐Neumann computing using neuromorphic systems based on two‐terminal resistive nonvolatile memory elements has emerged as a promising approach, but its full potential has not been realized due to the lack of materials and devices with the appropriate attributes. Unlike memristors, which require large write currents to drive phase transformations or filament growth, electrochemical random access memory (ECRAM) decouples the “write” and “read” operations using a “gate” electrode to tune the conductance state through charge‐transfer reactions, and every electron transferred through the external circuit in ECRAM corresponds to the migration of ≈1 ion used to store analogue information. Like static dopants in traditional semiconductors, electrochemically inserted ions modulate the conductivity by locally perturbing a host's electronic structure; however, ECRAM does so in a dynamic and reversible manner. The resulting change in conductance can span orders of magnitude, from gradual increments needed for analog elements, to large, abrupt changes for dynamically reconfigurable adaptive architectures. In this in‐depth perspective, the history of ECRAM, the recent progress in devices spanning organic, inorganic, and 2D materials, circuits, architectures, the rich portfolio of challenging, fundamental questions, and how ECRAM can be harnessed to realize a new paradigm for low‐power neuromorphic computing are discussed.
Talin, A. Alec↗
High-Efficiency Silicon Heterojunction Solar Cells: Materials, Devices and Applications
Photovoltaic (PV) technology offers an economic and sustainable solution to the challenge of increasing energy demand in times of global warming. The world PV market is currently dominated by the homo-junction crystalline silicon (c-Si) PV technology based on high temperature diffused p-n junctions, featuring a low power conversion efficiency (PCE). Recent years have seen the successful development of Si heterojunction technologies, boosting the PCE of c-Si solar cells over 26%. This article reviews the development status of high-efficiency c-Si heterojunction solar cells, from the materials to devices, mainly including hydrogenated amorphous silicon (a-Si:H) based silicon heterojunction technology, polycrystalline silicon (poly-Si) based carrier selective passivating contact technology, metal compounds and organic materials based dopant-free passivating contact technology. The application of silicon heterojunction solar cells for ultra-high efficiency perovskite/c-Si and III-V/c-Si tandem devices is also reviewed. In the last, the perspective, challenge and potential solutions of silicon heterojunction solar cells, as well as the tandem solar cells are discussed.
14 SOLAR ENERGY↗
Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications
In the last two decades, the third-generation wide bandgap semiconductor III-nitrides have revolutionized a myriad of electronic and photonic devices and applications, including power electronics, extreme-environment electronics, RF amplifiers, and optoelectronics such as light-emitting diodes and laser diodes. Recently, III-nitride heterostructures (e.g., AlGaN/GaN) based intersubband transition (ISBT) has garnered considerable research interest for infrared (IR), terahertz (THz), and ultrafast optoelectronics (e.g., photodetectors and quantum cascade lasers) due to its large conduction band offset, large optical phonon energy, and promising room-temperature operation. This paper presents a comprehensive review on the recent progress and challenges of III-nitrides based ISBT from the perspectives of materials, structures, devices, and applications, with a focus on nonpolar and semipolar III-nitrides. Various device structures have been demonstrated for III-nitrides based ISBT, including quantum wells, dots, and wires, among which AlGaN/GaN quantum wells are the most widely used. The effects of device parameters, crystal orientations, and doping on the ISBT properties of AlGaN/GaN quantum wells are discussed. Although the room-temperature operation is still elusive, theoretical and experimental studies show that nonpolar and semipolar III-nitrides based ISBT exhibits tunable ISBT wavelength from far-IR to THz spectral range with higher efficiency compared with polar c-plane ISBT. This review can serve as a gateway to and an important reference for the recent progress and challenges of III-nitrides based ISBT and its potential applications in sensing, communication, ultrafast optoelectronics, and integrated photonics.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Combining Spatial and Temporal Resolution in Cryo-TEM of Device Materials: Preprint
Cryogenic transmission electron microscopy (cryo-TEM) has been instrumental to reducing the effects of electron-beam sample interactions and enabling higher spatial resolution studies of beam sensitive materials. However, the process of thinning and freezing samples for cryo-TEM characterization is often complex and frequently involves removing materials from their environment or stimuli of interest for extended times. This can allow for structural relaxation, diffusion, and other dynamic processes to occur prior to characterization; for energy materials like battery electrodes, this makes it difficult to precisely correlate the imaged structure with native structures that evolve in-situ during device processing, operation, or aging. Here, we present methods to prepare cryo-TEM samples from energy materials during these critical processes in the relevant device lifetimes. This offers insights into improving the temporal resolution of cryo-TEM, while still exploiting its ability to achieve high spatial resolutions in characterizing beam sensitive materials.
BASIC BIOLOGICAL SCIENCES,MATERIALS SCIENCE↗
Additive manufacturing for COVID-19: Devices, materials, prospects, and challenges
The current COVID-19 pandemic has caused the shortage of personal protective equipment (PPE) where improvised manufacturing in particular 3D printing has addressed many needs. This prospective discusses the current global crisis, then follows the wide interest in addressing the shortage of medical devices and PPEs used for treatment and protection against pathogens. An overview of the 3D printing process with polymer materials is given followed by the different 3D printing projects of PPEs and medical devices that emerged for the pandemic (including validation/testing). The potential for rapid prototyping with different polymer materials and eventual high-throughput production is emphasized.
36 MATERIALS SCIENCE↗
Chapter 6: Luminescence and Thermal Imaging of Thin-Film Photovoltaic Materials, Devices, and Modules
In this chapter, we describe luminescence and thermal imaging in the context of thin-film PV devices. First, we discuss both traditional and developing experimental designs, including dark LIT (DLIT), illuminated LIT, PL using different illumination configurations, traditional EL performed under forward -bias current injection, and contactless EL induced with sub -cell illumination patterns. Next, we provide some brief theoretical background to highlight relationships between fundamental materials properties and the resulting luminescence and thermal images. Finally, we give examples of thin-film PV PL, EL, and LIT images to demonstrate the utility of these imaging methods ranging from understanding the microstructure of active layers to managing the quality and reliability of full PV modules.
41 EE - Solar Energy Technologies Office (EE-4S)↗
Acoustics at the nanoscale (nanoacoustics): A comprehensive literature review. Part I: Materials, devices and selected applications
We report in the past decade, acoustics at the nanoscale (i.e., nanoacoustics) has evolved rapidly with continuous and substantial expansion of capabilities and refinement of techniques. Motivated by research innovations in the last decade, for the first time, recent advancements of acoustics-associated nanomaterials/nanostructures and nanodevices for different applications are outlined in this comprehensive review, which is written in two parts. As part I of this two-part review, firstly, active and passive nanomaterials and nanostructures for acoustics are presented. Following that, representative applications of nanoacoustics including material property characterization, nanomaterial/nanostructure manipulation, and sensing, are discussed in detail. Finally, a summary is presented with point of views on the current challenges and potential solutions in this burgeoning field.
42 ENGINEERING↗
Building next generation analog computers: materials, devices and systems
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Fuller, Elliot James [Sandia National Laboratories↗
Panel Discussion ? Ultra-Wide Bandgap Materials Devices and Systems.
Abstract not provided.
Kaplar, Robert↗
Functional materials and devices by self-assembly
The field of self-assembly has moved far beyond early work, where the focus was primarily the resultant beautiful two- and three-dimensional structures, to a focus on forming materials and devices with important properties either otherwise not available, or only available at great cost. Over the last few years, materials with unprecedented electronic, photonic, energy-storage, and chemical separation functionalities were created with self-assembly, while at the same time, the ability to form even more complex structures in two and three dimensions has only continued to advance. Self-assembly crosscuts all areas of materials. Functional structures have now been realized in polymer, ceramic, metallic, and semiconducting systems, as well as composites containing multiple classes of materials. Finally, as the field of self-assembly continues to advance, the number of highly functional systems will only continue to grow and make increasingly greater impacts in both the consumer and industrial space.
Materials for Devices↗
Toward High-Throughput Deposition of III-V Materials and Devices Using Halide Vapor Phase Epitaxy: Preprint
III-V devices are used in countless applications due to their excellent physical properties. They could become more prevalent, especially in area-intensive applications such as solar power, if they can achieve significant cost decreases through increasing scale. The development of high-throughput growth systems can help to achieve this scale, leading to the use of III-V devices in areas where they are not currently economically feasible. Here, we describe a pilot production, pseudo inline HVPE reactor with the potential to greatly increase the throughput of III-V devices. We show computational modeling results that both informed system design and the understanding of the impact of different process parameters on the deposition. We show the throughput possibilities of this reactor with an example solar cell device design but note that this system is agnostic to the device structure and can be used to increase the throughput of lasers, LEDs, transistors, and more III-V devices.
high throughput↗
Optical Memory, Switching, and Neuromorphic Functionality in Metal Halide Perovskite Materials and Devices
Metal halide perovskite-based materials have emerged over the past few decades as remarkable solution-processable opto-electronic materials with many intriguing properties and potential applications. Notably, these emerging materials have recently been considered for their promise in low-energy memory and information processing applications. In particular, their large optical cross-sections, high photoconductance contrast, large carrier diffusion lengths, and mixed electronic/ionic transport mechanisms are attractive for enabling memory elements and neuromorphic devices that are written and/or read in the optical domain. Here, we review recent progress towards memory and neuromorphic functionality in metal halide perovskite materials and devices where photons are used as a critical degree of freedom for switching, memory, and neuromorphic functionality.
14 SOLAR ENERGY↗
Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments
This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated Venus environment (460 °C, 94 bar, complete chemical environment including CO2/N2/SO2). The mechanisms affecting the transistor performance and structural integrity in harsh environment were analyzed using a variety of experimental, simulation, and modeling techniques, including in situ electrical measurement (e.g., burn-in) and advanced microscopy (e.g., structural deformation). Through transistor, Transmission Line Method (TLM), and Hall-effect measurements vs temperature, it is revealed that the mobility decrease is the primary cause of reduction of on-state performance of this GaN transistor at high temperature. Material analysis of the device under test (DUT) confirmed the absence of foreign elements from the Venus atmosphere. No inter-diffusion of the elements (including the gate metal) was observed. The insights of this work are broadly applicable to the future design, fabrication, and deployment of robust III-N devices for harsh environment operation.
Physics↗
PISCES-RF: a liquid-cooled high-power steady-state helicon plasma device
Radio-frequency (RF) driven helicon plasma sources can produce relatively high-density plasmas (n > 1019 m -3 ) at relatively moderate powers (<2 kW) in argon. However, to produce similar high-density plasmas for fusion relevant gases such as hydrogen (H), deuterium (D) and helium (He), much higher RF powers are needed. For very high RF powers, thermal issues of the RF-transparent dielectric window, used in the RF source design, limit the plasma operation timescales. To mitigate this constraint, we have designed, built and tested a novel helicon plasma source assembly with a fully liquid-cooled RF-transparent window which allows steady state operations at high power (up to 20 kW) and successfully produces high-density plasma with both argon and H. Deionized (DI) water, flowing between two concentric dielectric RF windows, is used as the coolant. We show that a full azimuthal blanket of DI water does not prevent high-density plasma production. From calorimetry on the DI water, we measure the net heat removed by the coolant at steady state conditions. Using infra-red imaging, we calculate the constant plasma heat deposition and measure the final steady state temperature distribution patterns on the inner surface of the ceramic layer. The heat deposition pattern follows the helical shape of the antenna. We also show the consistency between the heat absorbed by the DI water, as measured by calorimetry, and the total heat due to the combined effect of the plasma heating and the absorbed RF. These results are being used to answer critical engineering questions for the 200 kW RF device materials plasma exposure experiment being designed at the Oak Ridge National Laboratory as a next generation plasma material interaction device.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗