Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress

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Fu, Houqiang, Fu, Kai, Yang, Chen, Liu, Hanxiao, Hatch, Kevin A., Peri, Prudhvi, Herath Mudiyanselage, Dinusha, Li, Bingjun, Kim, Tae-Hyeon, Alugubelli, Shanthan R., Su, Po-Yi, Messina, Daniel C., Deng, Xuguang, Cheng, Chi-Yin, Vatan Meidanshahi, Reza, Huang, Xuanqi, Chen, Hong, Yang, Tsung-Han, Zhou, Jingan, Armstrong, Andrew M., Allerman, Andrew A., Yu, Edward T., Han, Jung, Goodnick, Stephen M., Smith, David J., Nemanich, Robert J., Ponce, Fernando A., Zhao, Yuji. 2021-10-01. Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress. https://doi.org/10.1016/j.mattod.2021.04.011

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