Test on 2n2369, npn silicon epitaxial transistors manufactured by fairchild semiconductor
Electric resistivity of carbon resistor material for calculating static response characteristics of carbon bolometer element
N-P-N JUNCTION↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Semiconductor device qualification tests, general specification
Environmental and electrical testing of silicon, fused, N-P-N, power transistor
N-P-N JUNCTION↗
Study to investigate the effects of ionizing radiation on transistor surfaces Second quarterly report, Oct. 1 - Dec. 31, 1965
Effects of electrical bias during irradiation on radiation damage and of different measurement conditions on magnitude of degradation in N-P-N PLANAR transistors
N-P-N JUNCTION↗
High power switching transistor Final report
Design theory and fabrication procedure for n-p-n 100 ampere silicon switching transistor
SILICON TRANSISTOR↗
Components irradiation test no. 19, gamma irradiation of 2N914, 2N918, S2N930, 2N2192 and 2N2369 transistors
Gamma radiation tests on n-p-n silicon epitaxial transistors
SILICON TRANSISTOR↗
Development of ion implanted gallium arsenide transistors
Techniques were developed for creating bipolar microwave transistors in GaAs by ion implantation doping. The electrical properties of doped layers produced by the implantation of the light ions Be, Mg, and S were studied. Be, Mg, and S are suitable for forming the relatively deep base-collector junction at low ion energies. The electrical characteristics of ion-implanted diodes of both the mesa and planar types were determined. Some n-p-n planar transistor structures were fabricated by implantation of Mg to form the base regions and Si to form the emitters. These devices were found to have reasonably good base-collector and emitter-base junctions, but the current gain beta was small. The low was attributable to radiative recombination in the base region, which was extremely wide.
Hunsperger, R.↗
GaAs vapor-grown bipolar transistors.
Discussion of an approach for the fabrication of high-temperature GaAs transistors which is centered on the preparation of n-p-n three-layered structures entirely by a vapor-phase growth technique, as described by Tietjen and Amick (1966). The low growth temperature of approximately 750 C is thought to reduce contamination during crystal growth and to contribute to the reasonably high minority-carrier lifetimes obtained for the vapor-grown p-n junctions. The fact that impurity concentrations and layer thicknesses can be precisely controlled for epitaxial layers as thin as 1 micrometer is an important feature of this growth technique.
Nuese, C. J.↗