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Optical bistability and its potential for optical signal processing and communications are reviewed. Recent experimental results in semiconductor optical bistability are presented. In particular, optical bistability in GaAs-AlGaAs superlattices and CuCl, ZnS, and ZnSe is discussed.
Optically bistable materials respond to a single input with two possible optical outputs, contingent on excitation history. Such materials would be ideal for optical switching and memory, but the limited understanding of intrinsic optical bistability (IOB) prevents the development of nanoscale IOB materials suitable for devices. Here we demonstrate IOB in Nd 3+ -doped KPb 2 Cl 5 avalanching nanoparticles, which switch with high contrast between luminescent and non-luminescent states, with hysteresis characteristic of bistability. Here we elucidate a non-thermal mechanism in which IOB originates from suppressed non-radiative relaxation in Nd 3+ ions and from the positive feedback of photon avalanching, resulting in extreme, >200th-order optical nonlinearities. The modulation of laser pulsing tunes the hysteresis widths, and dual-laser excitation enables transistor-like optical switching. This control over nanoscale IOB establishes avalanching nanoparticles for photonic devices in which light is used to manipulate light.
Bistable optical resonators with saturable absorbers, discussing hysteresis characteristics and Q switching applications
We present a study of optical bi-stability in a 3.02 refractive index at 1550nm plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) film, as it pertains to bi-stable switching, memory applications, and thermal sensing applications. In this work we utilize an SRN ring resonator device, which we first characterize at low-power and then compare thermo-optic coefficients, (2.12 ± 0.125) × 10 −4 /°C, obtained from thermal-heating induced resonance shifts to optically induced resonance shifts as well as estimated propagation loss and absorption. We then measure the time response of this nonlinearity demonstrating the relaxation time to be 18.7 us, indicating the mechanism to be thermal in nature. Finally, we demonstrate bi-stable optical switching.
Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.
Bistable oscillations have been observed in BaTiO3 pumped by a single-mode 30-mW (488-nm) argon-ion laser, which is used simultaneously as a ring passive phase conjugator (RPPC) and as a unidirectional ring resonator (UDRR). Strong oscillations in the UDRR increase the threshold coupling strength required for oscillation in the RPPC. The oscillations in the RPPC reduce the fanning in the crystal necessary for the startup of oscillation in the UDRR. Auxiliary resonators pumped by the RPPC are also bistable with the UDRR. Similar bistable oscillations have been observed when the crystal is used simultaneously as a RPPC and as a linear passive phase conjugator.
The Proceedings for the 48th Meeting of the AGARD Avionics Panel contain the 18 papers presented a Technical Evaluation Report, and discussions that followed the presentations of papers. Seven papers were presented in the session devoted to optical bistability. Optical logic was addressed by three papers. The session on sources, modulators and demodulators presented three papers. Five papers were given in the final session on all optical systems. The purpose of this Specialists' Meeting was to present the research and development status of digital optical circuit technology and to examine its relevance in the broad context of digital processing, communication, radar, avionics and flight control systems implementation.
The optical properties of a new class of composite nonlinear materials composed of coated grains, such as cadmium sulfide with a silver coating, are examined. These materials exhibit intrinsic optical bistability and resonantly enhanced conjugate reflectivity. The threshold for intrinsic optical bistability is low enough for practical applications in optical communications and optical computing. Some problems associated with the fabrication of these materials are addressed. Based on preliminary results, switching times are expected to be in the subpicosecond range.
Devices for optical processing and computing systems are discussed, with emphasis on the materials requirements imposed by functional constraints. Generalized optical processing and computing systems are described in order to identify principal categories of requisite components for complete system implementation. Three principal device categories are selected for analysis in some detail: spatial light modulators, volume holographic optical elements, and bistable optical devices. The implications for optical processing and computing systems of the materials requirements identified for these device categories are described, and directions for future research are proposed.
High-accuracy optical systems for implementing digit-serial computations are discussed which incorporate parallelism and carry-free addition to achieve high processing speed. Employing on-line arithmetic, parallel calculations can be performed by the concurrent execution of operations. The algorithms are shown to be problem invariant and step invariant. Architectures using optical bistable devices and optical interconnects are discussed which can implement digit-serial addition, subtraction, multiplication, and division algorithms via the present approach.
A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.
In this paper, we will take a closer look at the state of the art of polydiacetylene, and metal-free phthalocyanine films, in view of the microgravity impact on their optical properties, their nonlinear optical properties and their potential advantages for integrated optics. These materials have many attractive features with regard to their use in integrated optical circuits and optical switching. Thin films of these materials processed in microgravity environment show enhanced optical quality and better molecular alignment than those processed in unit gravity. Our studies of these materials indicate that microgravity can play a major role in integrated optics technology. Polydiacetylene films are produced by UV irradiation of monomer solution through an optical window. This novel technique of forming polydiacetylene thin films has been modified for constructing sophisticated micro-structure integrated optical patterns using a pre-programmed UV-Laser beam. Wave guiding through these thin films by the prism coupler technique has been demonstrated. The third order nonlinear parameters of these films have been evaluated. Metal-free phthalocyanine films of good optical quality are processed in our laboratories by vapor deposition technique. Initial studies on these films indicate that they have excellent chemical, laser, and environmental stability. They have large nonlinear optical parameters and show intrinsic optical bistability. This bistability is essential for optical logic gates and optical switching applications. Waveguiding and device making investigations of these materials are underway.
The present conference on novel optoelectronics discusses topics in the state-of-the-art in this field in the Netherlands, quantum wells, integrated optics, nonlinear optical devices and fiber-optic-based devices, ultrafast optics, and nonlinear optics and optical bistability. Attention is given to the production of fiber-optics for telecommunications by means of PCVD, lifetime broadening in quantum wells, nonlinear multiple quantum well waveguide devices, tunable single-wavelength lasers, an Si integrated waveguiding polarimeter, and an electrooptic light modulator using long-range surface plasmons. Also discussed are backward-wave couplers and reflectors, a wavelength-selective all-fiber switching matrix, the impact of ultrafast optics in high-speed electronics, the physics of low energy optical switching, and all-optical logical elements for optical processing.
The materials to be investigated are ZnSe and related ternary semiconducting alloys (e.g., ZnS(x)Se(1-x), ZnTe(x)Se(1-x), and Zn(1-x)Cd(x)Se). These materials are useful for opto-electronic applications such as high efficient light emitting diodes and low power threshold and high temperature lasers in the blue-green region of the visible spectrum. The recent demonstration of its optical bistable properties also makes ZnSe a possible candidate material for digital optical computers. The investigation consists of an extensive ground-based study followed by flight experimentation, and involves both experimental and theoretical work. The objectives of the ground-based work are to establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low gravity environment and to obtain the experimental data and perform the analyses required to define the optimum parameters for the flight experiments. During the six months of the Preliminary Definition Phase, the research efforts were concentrated on the binary compound ZnSe - the purification of starting materials of Se by zone refining, the synthesis of ZnSe starting materials, the heat treatments of the starting materials, the vapor transport rate measurements, the vapor partial pressure measurements of ZnSe, the crystal growth of ZnSe by physical vapor transport, and various characterization on the grown ZnSe crystals.
The performance of two MSLM configurations that can be used to achieve optically bistable operation is discussed. The operating criteria for each mode are investigated, and the results are presented.
Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths, In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors.The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk II-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology. The electrical and optical properties of semiconductor materials depend on the native point defects, (the deviation from stoichiometry), and the impurity or dopant distribution. To date, the bulk growth of ZnSe substrates has been plagued with problems related to defects such as non-uniform distributions of native defects, impurities and dopants, lattice strain, dislocations, grain boundaries, and second phase inclusions which greatly effect the device performance. In the bulk crystal growth of some technologically important semiconductors, such as ZnTe, CdS, ZnSe and ZnS, vapor growth techniques have significant advantages over melt growth techniques due to the high melting points of these materials.
Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths. In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors. With an energy gap of 2.7 eV at room temperature, and an efficient band- to-band transition, ZnSe has been studied extensively as the primary candidate for a blue light emitting diode for optical displays, high density recording, and military communications. By employing a ternary or quaternary system, the energy band gap of II-VI materials can be tuned to a specific range. While issues related to the compositional inhomogeneity and defect incorporation are still to be fully resolved, ZnSe bulk crystals and ZnSe-based heterostructures such as ZnSe/ZnSeS, ZnSe/ZnCdSe and ZnCdSe/ZnSeS have showed photopumped lasing capability in the blue-green region at a low threshold power and high temperatures. The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk H-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology.
Optically transparent materials with switchable near-infrared (NIR) transmissivity are of significant interest for energy-saving smart window technologies. To this end, we demonstrate that semitransparent films of vertically aligned carbon nanotubes (CNTs) incorporated into electrochemically gated devices exhibit NIR transmittance changes up to 47% and bistable optical states that are appealing for low-power, large-area operation. The tunable NIR electrochromic response is driven by a doping-induced intersubband plasmon (ISBP) absorption, an optical feature in CNTs that is selective to light polarized perpendicular to the CNT axis. Vertically aligned CNT films (as opposed to more conventional planar CNT mats) thus allow us to isolate and study the ISBP resonance changes with applied voltage, electrode material, and film thickness.