Transit-time considerations in p-i-n diodes.
Frequency response of p-i-n photodiode, taking account of mobility and nonuniform generation of carriers in i region
P-I-N DIODE↗
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TRAPATT oscillations in a p-i-n avalanche diode
P-i-n avalanche diode trapped plasma avalanche triggered transit /TRAPATT/ oscillations characteristics and voltage waveform under square wave driving current, using computer program
Parker, D.↗
P-i-n diode detectors for astronomical photometry.
P-i-n photodiodes incident quantum efficiency and apparent noise input power measurements, considering astronomical photometry applications
Fisher, R.↗
Effects of intrinsic region width in Si/Li/ p-i-n diodes
Description of certain effects related to the width of the intrinsic region produced in a silicon p-i-n diode by lithium ion drifting. It is found that for wider intrinsic regions at large forward biases there is a larger ohmic drop across the region and a correspondingly smaller current. Moreover, the recovery time decreases with increasing intrinsic region width. Conversely, the decay phase time increases with increasing intrinsic region width and with increasing current levels.
Harman, T. L.↗
P-I-N diode switch
Solid state switches use the same voltage and power supply as the RF amplifier. This simplifies circuit design and reduces input power requirements.
Vanek, C. S.↗
Coplanar waveguide discontinuities for P-I-N diode switches and filter applications
A full wave space domain integral equation (SDIE) analysis of coplanar waveguide (CPW) two port discontinuities is presented. An experimental setup to measure the S-parameters of such discontinuities is described. Experimental and theoretical results for CPW realizations of pass-band and stop-band filters are presented. The S-parameters of such structures are plotted in the frequency range 5 to 25 GHz.
Dib, N. I.↗
Channelized coplanar waveguide pin-diode switches
Three different types of p-i-n diode, reflective CPW switches are presented. The first two switches are the series and the shunt mounted diode switches. Each has achieved greater than 15 dB of isolation over a broad bandwidth. The third switch is a narrow band, high isolation switched filter which has achieved 19 dB of isolation. Equivalent circuits and measured performance for each switch is presented.
Ponchak, G. E.↗
Proposed high-efficiency diode oscillator
High efficiency oscillator using avalanche square wave diode, considering case of silicon p-i-n diode
Penfield, P., Jr.↗
The harmonics produced by a pin diode in a microwave switching application.
Second and third harmonics produced by p-i-n diode in microwave switching application
MICROWAVE SWITCHING↗
Semiconductor physics
Irradiation effects on semiconductor properties, luminescence, and p-i-n diode electrical properties
Arora, B.↗
Infrared response measurements on radiation-damaged Si/Li/ detectors.
The improved infrared response (IRR) technique has been used to qualitatively compare radiation effects on Si(Li) detectors with energy levels reported for silicon in the literature. Measurements have been made on five commercial silicon detectors and one fabricated in-house, both before and after irradiation with fast neutrons, 1.9-MeV protons, and 1.6-MeV electrons. Effects dependent upon the extent of radiation damage have been observed. It seems likely that the photo-EMF, or photo-voltage, effect is the basic mechanism for the observation of IRR in p-i-n diodes with a wide i-region. Experimental characteristics of the IRR measurement are in agreement with those of the photovoltage effect.
Sher, A. H.↗
High-power microstrip switch
Switch, which uses only two p-i-n diodes on microstrip substrate, has been developed for application in spacecraft radio systems. Switch features improved power drain, weight, volume, magnetic cleanliness, and reliability, over currently-used circulator and electromechanical switches.
Choi, S. D.↗
Ion-implanted epitaxially grown ZnSe
The use of ZnSe to obtain efficient, short wavelength injection luminescence was investigated. It was proposed that shorter wavelength emission and higher efficiency be achieved by employing a p-i-n diode structure rather than the normal p-n diode structure. The intervening i layer minimizes concentration quenching effects and the donor-acceptor pair states leading to long wavelength emission. The surface p layer was formed by ion implantation; implantation of the i layer rather than the n substrate permits higher, uncompensated p-type doping. An ion implanted p-n junction in ZnSe is efficiency-limited by high electron injection terminating in nonradiative recombination at the front surface, and by low hole injection resulting from the inability to obtain high conductivity p-type surface layers. While the injection ratio in p-n junctions was determined by the radio of majority carrier concentrations, the injection ratio in p-i-n structures was determined by the mobility ratios and/or space charge neutrality requirements in the i layer.
Chernow, F.↗
High-speed dual-wavelength demultiplexing and detection in a monolithic superlattice p-i-n waveguide detector array
High-speed (1 Gbit/x) dual-wavelength demultiplexing and detection in a monolithic linear array of superlattice p-i-n photodetectors in a waveguide configuration is demonstrated. A crosstalk attenuation of 28 dB was achieved between two digital transmission channels with an interchannel wavelength spacing of 30 nm. The device performance is a result of an enhanced electroabsorption due to the quantum-confined Stark effect in the superlattice p-i-n diodes.
Larsson, A.↗
The design of a hybrid-type S-band diode phase shifter Technical report no. 1
Ring-hybrid microwave S-band diode phase shifter which permits small phase shift increments without significant increase in loss
PHASE SHIFT↗
Development and fabrication of a fast recovery, high voltage power diode
The use of positive bevels for P-I-N mesa structures to achieve high voltages is described. The technique of glass passivation for mesa structures is described. The utilization of high energy radiation to control the lifetime of carriers in silicon is reported as a means to achieve fast recovery times. Characterization data is reported and is in agreement with design concepts developed for power diodes.
Berman, A. H.↗
Interfaces for high-speed fiber-optic links - Analysis and experiment
An analysis of directly and externally modulated fiberoptic links is presented. The theoretical analysis is based on the signal flow diagram of the interface circuits to the laser diode, Mach-Zehnder electro-optic modulator, and p-i-n photodiode. System parameters such as gain, noise figure, two-tone intermodulation distortion, and spurious free and compression dynamic range are expressed as a function of frequency and operating point of the laser and external modulator. Two directly and externally modulated fiber-optic links were designed and fabricated to verify the analytical models. The direct modulation FO link was developed at the Ku-band (11.6-12.4 GHz), whereas the external modulation link was at L-band (875-925 MHz). Spurious-free dynamic ranges of 95.8 dB-Hz exp 2/3 and 113 dB-Hz exp 2/3, respectively, were achieved. The predictions based on the analytical models match the measured results.
Daryoush, Afshin S.↗
Radiation effects in Ga(0.47)In(0.53)As solar cells
The effects of irradiating Ga(0.47)In(0.53)As p-i-n junctions with 1 MeV electrons were measured using Deep Level Transient Spectroscopy (DLTS) and both dark and illuminated (1 sun, air mass zero (AM0)) current-voltage (I-V) measurements. The I-V measurements were made over the range 100K less than T less than 350K. Temperature coefficients of the Ga(0.47)In(0.53)As photovoltaic parameters are presented which follow the same general behavior as other solar cell materials (e.g. Si and GaAs). Fits of the dark I-V data to the two term diode equation before irradiation were satisfactory, yielding an estimated band-gap energy of 0.79 eV. The recombination component of the dark current was found to increase linearly with fluence. DLTS detected two radiation-induced defect levels one shallow (E(sub c)-0.10 eV) and one near mid-gap (E(sub c)-0.29 eV), and it is the near mid-gap level which is expected to be the cause of the dark current increase. The radiation-induced degradation of the open circuit voltage is shown to be accurately predicted from the dark I-V measurements. The degradation of the open circuit voltage dominated the radiation response of the photovoltaic parameters while the short circuit current was only moderately degraded. This behavior is qualitatively explained in terms of the base thickness and dopant level. Appropriate changes in the device structure are suggested which should increase the radiation resistance. Isochronal thermal annealing induced recovery in the photovoltaic parameters at approximately 400K, coinciding with an annealing stage of the near mid-gap defect level.
Walters, R. J.↗