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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Easy_PERT: a Python tool for writing PERT cards and parsing PERT card results [Slides]

This presentation begins by providing an overview of the PERT card. The PERT card uses differential operator method to compute first- and second-order tally variations due to density, composition, and reaction cross-sections. It is possible to have multiple PERT cards in one MCNP input deck to study tally variations for several sets of nuclides, reactions, and energy ranges. Furthermore, the METHOD option tells MCNP to calculate either the perturbed tally (METHOD=-1, -2, -3) or the change in the unperturbed tally (METHOD=1, 2, 3). In summation, a powerful use-case for the MCNP code PERT card is that it facilitates calculating tally sensitivities to nuclear data. Writing PERT card entries and parsing output MCTAL files is tedious and error prone. however, Easy_PERT makes use of existing tools (Faust and MCNPTools) to handle writing PERT card entries and parsing the output MCTAL files. The PERT card is early in the development process and planned upcoming capabilities include calculating sensitivities and combining MCTAL files from separate runs into one JSON file.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

(U) Energy-Dependent Perturbations of Scattering Cross Sections Using the PERT Card in MCNP6.2

The PERT card is used for first- and second-order perturbations of material densities, isotope densities, and isotope cross sections in the MCNP6.2 Monte Carlo code. Using the PERT card for firstand second-order sensitivities is straightforward. Reference 2 only looked at density perturbations with no energy dependence. This report looks at the sensitivity of a response to scattering cross sections as a function of energy and finds that there is a bug in the PERT capability. The SENSMG multigroup neutron sensitivity code was recently given the capability of computing sensitivities to user-specified reactions whose cross sections are available in a user-supplied NJOY output file. SENSMG uses the PARTISN multigroup discrete ordinates code for the transport. The NJOY-reaction capability is similar to that of SUSD3D, which also uses PARTISN for the multigroup transport. The PERT bug was identified by comparing MCNP6.2 outputs with SENSMG outputs. The next section of this report describes the test problem. Section III presents the MCNP6.2 PERT bug and proposes a solution. Section IV is a summary and conclusions. The SENSMG and MCNP input files are listed in the appendix.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2021

Validation of Nuclear Data Sensitivity Calculations by the MCNP PERT Card [Poster]

This work validates a method of estimating sensitivities that utilized the MCNP PERT card and tallies. The agreement of the PERT card and Brute Force results proves the validity of calculating nuclear data sensitivities by use of the MCNP PERT card, especially at higher energies. The overall agreement will be easier to understand once an uncertainty analysis is completed.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Systematic Operating Temperature Differences Between Al-BSF, PERC, and PERT-With-Optimized-Rear-Reflector Solar Mini-Modules Due to Rear Reflectance

Reflecting sub-bandgap light from photovoltaic modules has the potential to improve lifetime energy generation of fielded systems by reducing operating temperature. In this article, the temperature of fielded aluminum back-surface field (Al-BSF) and passivated emitter and rear contact (PERC) mini-modules was monitored every 5 minutes for 75 days along with corresponding meteorological data. Additionally, passivated emitter rear totally diffused (PERT) mini-modules with high-performance sub-bandgap rear reflectors were tested and compared to the state-of-the-art industrial modules. These reflectors consisted of a >300-nm-thick silicon dioxide nanoparticle film with a low refractive index. The impact of reflectance on measured operating temperature was isolated with a previously developed thermal model and quantified as the reflectance-induced median temperature difference between each tested module at representative outdoor conditions (1000 W m -2 , 25 degrees C ambient temperature, and 1.43 m s -1 wind speed). We found that, because of their reflectance differences, PERC modules ran systematically cooler than Al-BSF modules by 1.0 degrees C, whereas the PERT-with-optimized-rear-reflector systematically operated 1.4 degrees C cooler than the Al-BSF module and 0.4 degrees C than the PERC module. We also found that the rear reflector provided the greatest temperature benefit during periods of highest irradiance.

14 SOLAR ENERGY↗
DOE OSTI2021

Impact of illumination and encapsulant resistivity on polarization-type potential-induced degradation on n-PERT cells

Power loss caused by polarization-type potential-induced degradation (PID-p) in a variety of high-performance photovoltaic cell types has been observed to be recoverable via subsequent illumination and in some cases preventable via simultaneous illumination. In this report, we describe the results of a study in which the front faces of n-PERT cells encapsulated in polymers with a broad range of electrical resistivity were exposed to varying and controlled irradiance during PID testing. For a low resistivity ethylene-vinyl acetate copolymer encapsulant, no reduction in the rate or extent of power loss was observed for irradiance as high as 1,000 W/m 2 , whereas for high and intermediate resistivity polyolefin encapsulants, 100 and 300 W/m 2 , respectively, prevented power loss. We introduce a simple model based on charge accumulation that facilitates interpretation of these results whereby degradation via charge accumulation under voltage stress and recovery due to light exposure are opposing and interdependent phenomena that describe the susceptibility of a module to power loss.

14 SOLAR ENERGY↗
DOE OSTI2021

(U) Using the MCNP6 Perturbation Capability for Source Nuclide Density Sensitivities

The Taylor series (differential operator) perturbation method, as implemented in the PERT capability in MCNP6 (Ref. 1), can be used for first- and second-order sensitivity analyses in fixed-source problems. Unfortunately, the PERT capability does not yet work with point-detector (F5) or pulse-height (F8) tallies. Also, the second-order Taylor series term lacks the cross terms that would allow the calculation of mixed sensitivities. Finally, the PERT capability does not compute any sensitivities involving the source in a fixed-source problem. When neutrons or gamma rays are emitted due to radioactive decay, the source rate density depends intrinsically on the nuclide densities in the source material. When the PERT capability in MCNP6 is used to compute sensitivities of a response to nuclide and material densities, those sensitivities do not include the effect of the source.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

A Verification of Flux Sensitivity Estimates Using the MCNP Tally Perturbation Tool

Nuclear data is commonly used in applications such as nuclear nonproliferation, safeguards, and criticality safety. More specifically, nuclear data is used in predictive simulation codes like the Monte-Carlo N-Particle (MCNP ® ) transport code, Serpent, and similar radiation transport codes. The improvement of nuclear data enables more precise and accurate simulations, which result in higher fidelity designs and reduced operational/procedural costs. Therefore, the improvement of nuclear data is of paramount importance across the nuclear community. Nuclear data is improved and validated through integral benchmark experiments. The design of benchmark experiments is an extensive process; therefore, these experiments are often optimized on multiple characteristics, including sensitivity to the nuclear data, during the design process. Sensitivity is a measure of how much a quantity changes due to changes in independent variables such as experimental configuration. An experimental design that has a larger sensitivity to the nuclear data of interest will have a larger impact on the accuracy and precision of the validated data. Past integral benchmark experiments have primarily used the effective multiplication factor ($k_{eff}$) as the predominant measured quantity; however, experiments designed with other quantities in mind would be able to optimize on validating different areas of the nuclear data. A primary goal of the EUCLID project is to design, constrain, and reduce compensating errors in experiments focused on quantities other than $k_{eff}$ to better validate nuclear data across the board. Currently, there is a capability in MCNP to easily calculate the sensitivity of $k_{eff}$ to specific nuclear data of numerous reactions types and isotopes (KSEN card); however, the sensitivity of other quantities must be estimated in more strenuous manners. For example, the perturbation feature (PERT card) of MCNP can be used to estimate first-order sensitivities of some response in fixed source simulations. A recent announcement revealed that the first- and second-order perturbation features in previous releases of MCNP contained a bug. It was identified that particles were being scored into the wrong energy bin. The bug is in the most recent public release (MCNP6.2); however, a patch has been added to the most up to date version (MCNP6.2.2) that has not been released publicly. A direct comparison of the PERT card results for an F4 (neutron flux averaged over a cell) tally before and after the patch are shown in figure 1. All simulations used in the sensitivity estimates in this report were performed with MCNP6.2.2. This work verifies the patched MCNP perturbation tool by comparing first order sensitivities made using the PERT card to estimates made using manual perturbation of the compact ENDF (ACE) files.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Assessing UV-Induced Degradation in Bifacial Modules of Different Cell Technologies

Bifacial technology enables solar cells to offer higher power output and lower levelized cost of energy compared to their monofacial counterparts. Here, we examined the adverse effects of ultraviolet-induced degradation (UVID) on a variety of high-efficiency silicon wafer-based bifacial cell technologies, including silicon heterojunction (SHJ), interdigitated back contact (IBC), passivated emitter rear contact (PERC), and passivated emitter rear totally-diffused (PERT). Both the front and rear sides of bifacial cells without any encapsulation were exposed to an artificially accelerated UV exposure test. After 2000 h of UV irradiation, the bifacial cells exhibited greater power loss with backside exposure indicating potential sensitivity of the rear passivation to UV. The highest power degradation is observed in SHJ cells, followed by p-PERC and n-PERT cell technologies. The degradation in SHJ cells is attributed to the reduction in V oc and FF, while the degradation in p-PERC and n-PERT cells is correlated with a significant drop in I sc . This suggests that each cell type/make degrades via different degradation pathways.

bifacial cells↗
DOE OSTI2025

UV + Damp Heat Induced Power Losses in Fielded Utility N-Type Si PV Modules

A recent trend in commercial PV modules is a transition to n-type silicon cells, including passivated emitter rear totally diffused (n-PERT), tunnel oxide passivated contact (TOPCon), and silicon heterojunction (SHJ). There is evidence via lab studies that some of these cells are more susceptible to UV induced degradation (UVID), yet there is a lack of confirmation that such degradation occurs in the field. Current IEC standards designed to screen for early module failures require only minimal UV exposure (15 kWh/m2 280-400 nm, ~2-3 months equivalent outdoor exposure). Here, we investigate fielded n-PERT silicon (Si) modules from a commercial utility that show power losses of ~2%/year. We present a comprehensive picture of the physics and chemistry of degradation supported by both module and cell electronic characterization (EL, PL, IV, EQE, and DLIT) and materials-level morphological and chemical analysis (SEM, EDS, XPS, FTIR, and HPLC). All sampled site modules show short circuit current (Isc) and open circuit voltage (Voc) losses when compared to unfielded spares, with the most severely degraded also having losses in fill factor (FF). We identify two different degradation modes contributing to overall power loss: (1) external quantum efficiency (EQE) measurements show losses in the blue range of the spectra, indicative of cell surface recombination losses, and (2) variations in high series resistance (Rs) at the cell level that are correlated with compositional differences in cell metallization. Using unfielded spares, we were able to reproduce Voc, Isc, and EQE losses via a minimum UV stress of 67.5 kWh/m2 (280-400 nm), 4.5x the exposure currently required in IEC 61215-2 (MQT 10). Degradation continued with additional UV dosage equivalent to the fielded modules (405 kWh/m2 total), with power loss leveling out at an average of 6.1%. Subsequent 1000 h of 85% RH/85degrees C damp heat testing showed that cells exposed to UV underwent additional severe series resistance degradation, even those without the susceptible paste composition seen in the field, whereas non-UV exposed cells saw little change. We attribute this to higher concentrations of acetic acid generated on the UV exposed area of the module, leading to degradation of the gridline/cell interface and high Rs. This study is unique in that it reproduces field observed utility scale UVID with an accelerated test and supports the need for standards development for longer UV exposure combined with other stress factors to catch materials interplay within a module package.

14 SOLAR ENERGY↗
DOE OSTI2022

UV‐induced degradation of high‐efficiency silicon PV modules with different cell architectures

Abstract Degradation from ultraviolet (UV) radiation has become prevalent in the front of solar cells due to the introduction of UV‐transmitting encapsulants in photovoltaic (PV) module construction. Here, we examine UV‐induced degradation (UVID) in various commercial, unencapsulated crystalline silicon cell technologies, including bifacial silicon heterojunction (HJ), interdigitated back contact (IBC), passivated emitter and rear contact (PERC), and passivated emitter rear totally diffused (PERT) solar cells. We performed UV exposure tests using UVA‐340 fluorescent lamps at 1.24 W·m −2 (at 340 nm) and 45°C through 4.02 MJ·m −2 (2000 h). Our results showed that modern cell architectures are more vulnerable to UVID, leading to a significant power decrease (−3.6% on average; −11.8% maximum) compared with the conventional aluminum back surface field (Al‐BSF) cells (<−1% on average). The power degradation is largely caused by the decrease in short‐circuit current and open‐circuit voltage. A greater power decrease is observed in bifacial cells with rear‐side exposure compared with those with front‐side exposure, indicating that the rear side is more susceptible to UV damage. Secondary ion mass spectroscopy (SIMS) confirmed an increase in hydrogen concentration near the Si/passivation interface in HJ and IBC cells after UV exposure; the excess of hydrogen could result in hydrogen‐induced degradation and subsequently cause higher recombination losses. Additionally, surface oxidation and hot‐carrier damage were identified in PERT cells. Using a spectral‐based analysis, we obtained an acceleration factor of 5× between unpackaged cells (containing a silicon nitride antireflective coating on the front) in the UV test and an encapsulated module (with the front glass and encapsulant blocking 90% of the UV at 294 nm and 353 nm, respectively) in outdoor conditions. From the analytical calculations, we show that a UV‐blocking encapsulant can reduce UV transmission in the module by an additional factor of ~50.

14 SOLAR ENERGY↗
DOE OSTI2021

Adoption of image-driven machine learning for microstructure characterization and materials design: A Perspective

Microstructure characterization enables the development of structure-processing-property relationships critical to several research areas within the broad field of materials science, from alloy design to the assessment of corrosion resistance, and failure analysis. Conventional approaches to material characterization have relied on either qualitative inference by the human ex-pert or software applications that can extract high-level features from images, such as boundary segmentation, average grain diameter, etc. Such approaches rely heavily on subject matter expert user intervention and knowledge of what phases or more generally, what microstructural features, are of interest. The recent surge in the adoption of machine learning techniques to address problems in materials engineering has brought with it an increased interest and application of Image Driven Machine Learning (IDML) approaches. In this work, we review the applications of IDML to the field of materials characterization. A canonical hierarchy of stages is defined, which when put sequentially together completes an IDML study: problem definition, dataset building, model selection and training, model evaluation, and integration with existing instrumentation or simulation workflow. The studies reviewed in this work are analyzed from the perspective of each of these stages. Such a review permits agranular assessment of the field, for example the impact of IDML on materials characterization at the nanoscale, the size of a typical dataset required to train a semantic segmentation model on electron microscopy images, ubiquitousness of transfer learning in the domain, etc. Finally, we discuss the importance of interpretability and explainability in the field of IDML for materials characterization, and provide an overview of two emerging techniques in the field: semantic segmentation and generative adversarial networks.

Baskaran, Arun↗
DOE OSTI2020

Comparison of passivation properties of plasma-assisted ALD and APCVD deposited Al 2 O 3 with SiN x capping

In this paper, we report on the direct comparison of Al 2 O 3 films deposited by plasma-assisted atomic layer deposition (ALD) and atmospheric pressure chemical vapor deposition (APCVD) techniques on the passivation properties of both bare and boron diffused Si surfaces. It is found that ALD and APCVD deposited Al 2 O 3 layers with SiN x capping have very similar chemical composition, hydrogen concentration at the Al 2 O 3 /Si interface, and interface defect density (D it ), but the ALD film has slightly higher negative fixed charge (Q f ) after a high temperature (~750 °C) contact firing cycle typically used for solar cell fabrication. Both films showed excellent surface recombination velocities of <5 cm/s on planar and textured un-diffused Si wafers, but the ALD films gave 1 to 8 fA/cm 2 lower emitter saturation current densities (J 0e ) on implanted boron emitters with sheet resistance in the range of 90–180 Ω/. This is attributed to the observed slightly higher negative charge-induced field-effect passivation in the ALD films. However, SiN x /Al 2 O 3 /p + /n/n + passivated emitter rear totally diffused (PERT) cell structures fabricated with 110 and 150 Ω/ emitter in this study showed no appreciable difference in cell efficiency. Device analysis and simulations showed that even for >23% high-performance solar cells design, with very low bulk and rear contact recombination, the observed small difference in J 0e has negligible effect on cell efficiency. Furthermore, APCVD Al 2 O 3 passivation of B emitter can produce comparable efficiencies to their counterpart ALD Al 2 O 3 passivated n-type Si solar cells.

14 SOLAR ENERGY↗
DOE OSTI2021

UV-Induced Degradation of High-Efficiency Solar Cells with Different Architectures

The ultraviolet-induced degradation (UVID) of solar panels is associated with the deterioration of cell performance and reduced reliability of packaging materials. Here we examine the UV stability of different architectures of high-efficiency solar cells without any encapsulation. Identical UV exposure tests were performed at two different labs using UVA-340 fluorescent lamps under different electrical bias configurations (open- or short-circuit) and irradiated cell surfaces (for bifacial technologies). Cell technologies, including heterojunction (HJ), interdigitated back-contact cells (IBC), passivated emitter rear contact (PERC), passivated emitter rear totally-diffused (PERT), are found to be more susceptible to UVID, leading to significant Isc loss (up to 4%) and P max loss (up to 15%) as compared to the conventional back surface field (Al-BSF) cells after exposure to UV irradiation of 8.92 MJ-m -2 -nm -1 at 340 nm. Additionally, the bifacial cells when irradiated from the backside exhibited greater photocurrent loss compared to the front side exposure, indicating potential sensitivity of rear surface passivation to UV radiation.

crystalline silicon↗
DOE OSTI2023

Capacitance Transients, Photoconductive Decay, and Impedance Spectroscopy on 19% to 22% Efficient Silicon Solar Cells

High efficiency silicon solar cells are characterized using current-voltage curves, electroluminescence imaging, impedance spectroscopy, capacitance transients, microwave photoconductive decay, and time-resolved photoluminescence imaging. The sample set is composed of cells from different manufacturers and includes an n-type silicon heterojunction (SHJ), an n-type passivated emitter rear totally diffused (PERT), and five different p-type passivated emitter rear contact (PERC) cells. Carrier lifetimes, both photoconductivity and photoluminescence, are measured co-located with the light excitation pulse and within the cell but away from the light spot. Luminescence intensity and excess carrier lifetimes correlate to cell voltage. The capacitance transient time constants correlate to the capacitance values extracted from impedance spectroscopy.

capacitance↗
DOE OSTI2024

Diagnosis of PV Cell Passivation Degradation Resulting from Hot-Humid, High Voltage Potential Aging

Corrosion of the antireflective coating on the cell ("AR c corrosion") was previously observed in studies using hot-humid test conditions with external high voltage (HV) bias. Because AR c corrosion is not well understood, mini-modules (MiMos) were examined in a comparative experiment using PERC and PERT as well as legacy Al-BSF cells. For separate MiMos with the cell circuit electrical at +1500 V, -1500 V, or unbiased "V oc", test conditions in the comparative study included 60degrees C/60% RH for 96 h, as in IEC TS 62804-1; 70degrees C/70%RH for 200 h; and 85degrees C/85% RH for 200 h. Characterizations at each read point included: camera and electroluminescence (EL) imaging, colorimetry, and I-V curve tracing. Characterizations at the final read point included: SunsVoc; spatially mapping external quantum efficiency (EQE); high resolution: photoluminescence (PL), EL, and dark lock-in thermographic (DLIT) imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS) and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos (stepped HV aging) and full-sized modules (outdoor aging) from previous studies. AR c corrosion was specifically observed for the glass/encapsulant/cell side of +1500 V (HV+) stressed MiMos, where appearance, color, and reflectance were the characteristics most distinguished relative to simultaneously occurring degradation modes. SEM/EDS and SAM identified conversion of silicon nitride to silicon oxide or hydrous silica, preferentially occurring at the edges and tips of the pyramidal textured cell surface.

aging↗
DOE OSTI2021

Pushing the efficiency limit of low-cost, industrially relevant Si solar cells to > 22.5% by advancing cell structures and technology innovations (Final Report)

The overall objective of this program is to achieve ~23% bifacial n-type cell efficiencies by developing and implementing optimized homogeneous or selective boron (B) emitter on front and tunnel oxide passivated contact (TOPCon) on rear side, in combination with advanced fine-line screen-printing metallization with floating busbars. During this research project, first we developed a technology roadmap to drive the 21% n-PERT cell efficiency from 21% to 23% by transforming the cell design to n-TOPCon and establishing the requirements for each layer, including B emitter, rear n-TOPCon, n-base Si and screen-printed contacts. Next, consistent with our roadmap, we developed advanced homogeneous implanted B emitter (150-180 Ω/⌫) passivated with ALD Al 2 O 3 layer capped with PECVD SiN x /SiO x double-layer antireflection coating This gave a very low recombination current density of 10-15 fA/cm 2 prior to metallization. In addition, we demonstrated metallized recombination current density of ~31 fA/cm 2 for this advanced homogeneous B emitter with industrial screen-printed, fire-through contacts with 40 μm wide grid lines, floating busbars and implementation of an advanced Ag-Al paste which resulted in local or reduced area metal-Si contact under the grid lines with virtually no emitter surface etching. This paste reduced the full area metallized J oe,metal from >1100 fA/cm 2 to ~700 fA/cm 2 . We also developed novel processes for the formation of p + /p ++ selective B emitter by a) single B diffusion with selective etch back and b) two-steps diffusion with implanted B in field region and APCVD B diffusion under the metal grid. We achieved very low un-metallized recombination current density (J 0 ) of ~18 fA/cm 2 for the selective p ++ p + emitters (30/150 Ω/⌫) and metallized J 0 of ~28 fA/cm 2 with ~3% screen-printed metal contact to p ++ regions. Next, we developed the technology for n-TOPCon by growing phosphorus-doped LPCVD and PECVD poly-Si on top of ~ 15Å chemically grown (NAO) tunnel oxide. After an optimized anneal at 875 °C for 30 min, passivated n-TOPCon have unmetallized J 0 of ~ 5 fA/cm 2 which went down further to ~ 1 fA/cm 2 after a 700 Å SiN x capping layer and simulated contact firing cycle at 770 °C. After screen-printed fire-through metallization on this n-TOPCon with ~13% metal coverage, metallized J 0 value increased to only ~5 fA/cm 2 which is among the lowest reported value to the best of our knowledge for screen-printed metallization. Finally, we integrated all the above technology innovations and enhancements and demonstrated low-cost manufacturable screen-printed n-TOPCon bifacial Si solar cell with ~23% efficiencies. Based on the experimental and theoretical understanding developed in this project, we have developed a new technology roadmap that shows that implementation of busbarless contacts, 10-20 ms bulk lifetime Si, and selective B emitter or selective TOPCon on the front can drive ~23% efficient cells achieved in this research to ~25% at low-cost.

14 SOLAR ENERGY↗