Search NASA⌕ Search

SEARCH · Search NASA

Results for “Plasma materials processing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Non-Equilibrium Processes, Stability, Design and Control of Pulsed Plasmas for Materials Processing

The energy and angle of impact of ions, interspersed with fluxes of neutral radicals, on the surface of wafers during plasma materials processing are critical parameters for the fabrication of microelectronic devices, nanostructure materials and biocompatible materials. This sensitivity extends to nearly all applications of plasmas to materials processing and surface modification. Low temperature plasmas for plasma materials processing have traditionally used continuously excited plasmas. However, pulsed plasma processing is an enabling technology for achieving finer resolution of microelectronics fabrication and for producing unique surface properties in a wide range of applications. This research project is addressing fundamental plasma physics issues in materials processing – the control of pulsed plasmas and the means for optimizing plasma produced reactant fluxes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1996

Absolute Inelastic Differential Electron Scattering Cross Sections for He, Xe, N2, and CO at Near Threshold Impact Energies for 90(deg) Scattering Angle

There is a great deal of need for accurate differential cross sections (DCSs) associated with electron impact excitation of various atomic and molecular species. These cross sections are needed for modeling of various plasma systems (ranging from lasers and material processing plasmas to planetary and astrophysical plasmas) and for guiding development of theoretical and computational schemes.

DCS beam scattering beam-beam scattering↗
NASA NTRSDate not supplied

Development of ASCENT Propellant Thrusters and Propulsion Systems

Since the 1960s, hydrazine technology has dominated the market of propulsion technology by providing reliable performance on a wide variety of spacecraft. Efforts to replace hydrazine with a higher-performance and safer alternative have engaged numerous emerging technologies in the industry to mature. ASCENT propellant, also known as AF-M315E, is an example of one such green propellant. Initially developed to provide a safer handling environment than hydrazine, ASCENT offers higher overall performance than a hydrazine equivalent by creating more heat during ignition. The next generation of propulsion technology, based on ASCENT propellant, produces a higher impulse and energy density, expanding the realm of applicable missions from LEO to GEO and beyond. Building on a strong background in small satellite technology and expertise in thermal and oxidation resistant materials, Plasma Processes began several thruster programs for variety of small satellite applications using ASCENT-based technology. Plasma Processes’ background expertise in thermal and oxidation resistant materials provides the necessary foundation to create ASCENT-based technology hardware.

Green Propellant↗
NASA NTRS1998

Plasma-assisted microwave processing of materials

A microwave plasma assisted method and system for heating and joining materials. The invention uses a microwave induced plasma to controllably preheat workpiece materials that are poorly microwave absorbing. The plasma preheats the workpiece to a temperature that improves the materials' ability to absorb microwave energy. The plasma is extinguished and microwave energy is able to volumetrically heat the workpiece. Localized heating of good microwave absorbing materials is done by shielding certain parts of the workpiece and igniting the plasma in the areas not shielded. Microwave induced plasma is also used to induce self-propagating high temperature synthesis (SHS) process for the joining of materials. Preferably, a microwave induced plasma preheats the material and then microwave energy ignites the center of the material, thereby causing a high temperature spherical wave front from the center outward.

Barmatz, Martin↗
DOE OSTI2023

Hypervelocity impact in stellar media: heat shielding, shock fronts and ablation clouds

The Frontier Plasma Science experiments proposed by our team will model the processes occurring during spacecraft atmospheric entries and meteorite planetary collisions by inserting material targets into the Scrape off Layer (SOL) and edge plasma of a tokamak. This project will investigate important plasma-material processes during high-enthalpy atmospheric entries, including heat flux generation and material ablation. Of particular interest is to explore heat and particle flux detachment in front of the sample using concepts and techniques developed in the latest studies of divertor detachment. Exploration missions to the Solar System’s gaseous giants and hyperbolic re-entries into the Earth’s atmosphere require spacecraft that can withstand high velocity (>10 km/s), high heat fluxes (>10 MW/m2), and corresponding enthalpies. Ablative materials have been used as thermal shields to protect the spacecraft from severe heating during entry. However, developing high enthalpy ablating materials is challenging due to the lack of adequate ground testing facilities. Our team stated that the performance of candidate shielding materials could be assessed in a laboratory environment with multiple in-situ diagnostics, which was enabled by the progress in the tokamak research. Modern machines feature relatively long discharges (~10 s) with well-controlled stable plasma conditions at the edge where the heat flux and the flow speed are similar to those experienced during atmospheric entries. The experiments were carried out at the DIII-D National Fusion Facility in San Diego, CA, operated by General Atomics (GA) for the DoE.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Hollow plasma structure during the breakdown phase of nanosecond pulsed pin–pin discharges generated with overvoltage

Atmospheric pressure nanosecond repetitive pulsed discharges are of interest for applications in combustion, material processing, plasma medicine and gas treatment. Here, the observation of a hollow structure at the ignition stage of such discharge in a pin–pin geometry is reported. Plasma images show that the phenomenon occurs in a variety of gases (helium, humid helium, argon and air) suggesting that it is in first approximation non-species specific. The phenomenon is investigated in detail in pure helium discharges for peak applied voltages between 3 and 6 kV and 200 ns voltage pulse duration by performing time-resolved optical emission spectroscopy measurements of electron density, gas temperature and electric field. All the measurements were performed at the mid-gap during the early stages of the discharge, near the breakdown. The transition from a homogeneous filament to a hollow structure occurs between 4 and 5 kV in helium. Electron density measurements by Stark broadening of the He I line at 492.2 nm show no significant difference in electron densities for the applied voltage between 3 and 6 kV. In all cases, a maximum electron density of about 3.5 × 10 21 m –3 was found. Electric field measurements performed by Stark polarization spectroscopy of the He I transition at 492.2 nm and of its forbidden counterpart show electric field strengths higher than the DC breakdown field of helium at atmospheric pressure consistent with the generation of the discharges with overvoltage. Moreover, a correlation between electric field values and the appearance of the hollow structure is observed and, remarkably, the phenomenon is not sensitive to the pre-ionization level (memory effect). Possible mechanisms for the phenomenon are discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1999

Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species concentration, temperature, ion energy distribution, and electron number density. A wide variety of diagnostic techniques are under development through this consortium grant to measure these parameters. including molecular beam mass spectrometry (MBMS). Fourier transform infrared (FTIR) spectroscopy, broadband ultraviolet (UV) absorption spectroscopy, a compensated Langmuir probe. Additional diagnostics. Such as microwave interferometry and microwave absorption for measurements of plasma density and radical concentrations are also planned.

Cappelli, Mark A.↗
DOE OSTI2024

Laser-stimulated photodetachment of electrons from the negatively charged dielectric substrates

The photon-stimulated emission of bulk electrons has been extensively studied for various types of materials, while the photodetachment of surplus surface electrons has not been fully explored. The photodetachment barrier energy is commonly defined by the surface electron affinity of material, which is typically less than the work function and more pronounced for non-conducting substrates and in environments with a continuous flux of electrons to the surface, such as in gas discharge plasmas. Herein, it is experimentally shown that the photodetachment yield of surplus electrons created by plasma-induced charging of non-conductive surfaces of dielectric materials depends on the initial surface charge density and do not correlate with the tabulated affinity values of these materials under gas discharge charging conditions. In cocnclusion, this result obtained using laser-stimulated photodetachment for fused silica, boron nitride, and alumina, is critically important for the understanding of charging and discharging dynamics, secondary electron emission, and photo emission effects affecting plasma–wall interactions relevant to surface and capacitively coupled discharges, dusty plasmas, electrostatic probe diagnostics, and applications for plasma processing of materials, plasma propulsion, and gas breakdown.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Field reversal in low pressure, unmagnetized radio frequency capacitively coupled argon plasma discharges

In general, the radio frequency (rf) electric field within a sheath points toward the metal electrode in low pressure, unmagnetized rf electropositive capacitively coupled plasma (CCP) glow discharges. This is due to the large ratio of electron to ion mobility and the formation of an ion sheath. In this work, we studied, using fully kinetic particle-in-cell simulations, a reversed electric field induced by the strong secondary electron emission during the phase of sheath collapse in a high-voltage rf-driven low pressure CCP glow discharge. We explored the transition behavior of the formation of field reversal as a function of driving voltage amplitude and found that field reversal starts to form at around 750 V, for a discharge with an electrode spacing of 4 cm at 10 mTorr argon pressure driven at 13.56 MHz. Accordingly, the energy distribution function of electrons incident on the electrode shows peaks from around 3 to 10 eV while varying the driving voltage from 150 to 2000 V, showing potentially beneficial effects in plasma material processing where relatively directional electrons are preferred to solely thermal diffusion electrons.

Physics↗
DOE OSTI2022

The 2022 Plasma Roadmap: low temperature plasma science and technology

Abstract The 2022 Roadmap is the next update in the series of Plasma Roadmaps published by Journal of Physics D with the intent to identify important outstanding challenges in the field of low-temperature plasma (LTP) physics and technology. The format of the Roadmap is the same as the previous Roadmaps representing the visions of 41 leading experts representing 21 countries and five continents in the various sub-fields of LTP science and technology. In recognition of the evolution in the field, several new topics have been introduced or given more prominence. These new topics and emphasis highlight increased interests in plasma-enabled additive manufacturing, soft materials, electrification of chemical conversions, plasma propulsion, extreme plasma regimes, plasmas in hypersonics, data-driven plasma science and technology and the contribution of LTP to combat COVID-19. In the last few decades, LTP science and technology has made a tremendously positive impact on our society. It is our hope that this roadmap will help continue this excellent track record over the next 5–10 years.

plasma diagnostics↗
DOE OSTI2023

The 2022 applied physics by pioneering women: a roadmap

Abstract Women have made significant contributions to applied physics research and development, and their participation is vital to continued progress. Recognizing these contributions is important for encouraging increased involvement and creating an equitable environment in which women can thrive. This Roadmap on Women in Applied Physics, written by women scientists and engineers, is intended to celebrate women’s accomplishments, highlight established and early career researchers enlarging the boundaries in their respective fields, and promote increased visibility for the impact women have on applied physics research. Perspectives cover the topics of plasma materials processing and propulsion, super-resolution microscopy, bioelectronics, spintronics, superconducting quantum interference device technology, quantum materials, 2D materials, catalysis and surface science, fuel cells, batteries, photovoltaics, neuromorphic computing and devices, nanophotonics and nanophononics, and nanomagnetism. Our intent is to inspire more women to enter these fields and encourage an atmosphere of inclusion within the scientific community.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Unconventional Materials Processing Using Spark Plasma Sintering

Spark plasma sintering (SPS) has gained recognition in the last 20 years for its rapid densification of hard-to-sinter conventional and advanced materials, including metals, ceramics, polymers, and composites. Herein, we describe the unconventional usages of the SPS technique developed in the field. The potential of various new modifications in the SPS technique, from pressureless to the integration of a novel gas quenching system to extrusion, has led to SPS’ evolution into a completely new manufacturing tool. The SPS technique’s modifications have broadened its usability from merely a densification tool to the fabrication of complex-shaped components, advanced functional materials, functionally gradient materials, interconnected materials, and porous filter materials for real-life applications. The broader application achieved by modification of the SPS technique can provide an alternative to conventional powder metallurgy methods as a scalable manufacturing process. The future challenges and opportunities in this emerging research field have also been identified and presented.

36 MATERIALS SCIENCE↗
NASA NTRS1994

Plasma heating for containerless and microgravity materials processing

A method for plasma heating of levitated samples to be used in containerless microgravity processing is disclosed. A sample is levitated by electrostatic, electromagnetic, aerodynamic, or acoustic systems, as is appropriate for the physical properties of the particular sample. The sample is heated by a plasma torch at atmospheric pressure. A ground plate is provided to help direct the plasma towards the sample. In addition, Helmholtz coils are provided to produce a magnetic field that can be used to spiral the plasma around the sample. The plasma heating system is oriented such that it does not interfere with the levitation system.

Leung, Emily W.↗
DOE OSTI2024

Science challenges and research opportunities for plasma applications in microelectronics

Low-temperature plasmas (LTPs) are essential to manufacturing devices in the semiconductor industry, from creating extreme ultraviolet photons used in the most advanced lithography to thin film etching, deposition, and surface modifications. It is estimated that 40%–45% of all process steps needed to manufacture semiconductor devices use LTPs in one form or another. LTPs have been an enabling technology in the multidecade progression of the shrinking of device dimensions, often referred to as Moore’s law. New challenges in circuit and device design, novel materials, and increasing demands to achieve environmentally benign processing technologies require advances in plasma technology beyond the current state-of-the-art. The Department of Energy Office of Science Fusion Energy Sciences held a workshop titled Plasma Science for Microelectronics Nanofabrication in August 2022 to discuss the plasma science challenges and technical barriers that need to be overcome to continue to develop the innovative plasma technologies required to support and advance the semiconductor industry. One of the key outcomes of the workshop was identifying a set of priority research opportunities (PROs) to focus attention on the most strategic plasma science challenges to address to benefit the semiconductor industry. For each PRO, scientific challenges and recommended strategies to address those challenges were identified. Furthermore, this article summarizes the PROs identified by the workshop participants.

36 MATERIALS SCIENCE↗
NASA NTRS1998

Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

Lampkin, Gregory↗
NASA NTRS2003

The Organic Component of Interstellar Dust

The distribution, chemical structure, and formation of organic matter in the interstellar medium are important to our understanding of the overall evolution of dust. The exchange of dust between the dense and diffuse interstellar medium, and the effects of processing on dust within dense clouds will affect the inventory of material available for incorporation into newly forming star and planetary systems. Observational ground-based studies have confirmed the widespread distribution of the 3.4 pm absorption band attributed to aliphatic hydrocarbons in the diffuse interstellar medium of our own galaxy, and in the dusty spectra of a few nearby galaxies, while space based observations from IS0 probed the signatures of corresponding mid-infrared features. Laboratory experiments which utilize both thermal processes and energetic processing by high energy photons and cosmic rays, produce candidate materials which offer close matches to the observed diffuse interstellar medium and extragalactic hydrocarbon absorption features. Through an analysis of the 4000 to 1000 cm (2.5 to 10 micrometers) region of the spectrum of diffuse interstellar medium (DISM) dust compared with the spectra of thirteen chemical entities produced in the laboratory which serve as analogs to the interstellar material, significant constraints have been placed on the applicability of proposed candidate materials to explain the interstellar features. The results indicate that the organic refractory material in the diffuse interstellar medium is predominantly hydrocarbon in nature, possessing little nitrogen or oxygen, with the carbon distributed between the aromatic and aliphatic forms. Long alkane chains H3C-(CH2),- with n much greater than 4 or 5 are not major constituents of this material. Comparisons to laboratory analogs indicate the DISM organic material resembles plasma processed pure hydrocarbon residues much more so than energetically processed ice residues. This result is consistent with a birthsite for the carrier of the 3.4 micrometers band in the outflow region of evolved carbon stars. Comparisons of dust from our own galaxy with that of distant galaxies suggests that the organic component of interstellar dust is widespread and may be an important universal reservoir of prebiotic organic carbon.

Pendleton, Yvonne↗
DOE OSTI2020

Understanding and Mitigating the Contamination of Intrinsic poly-Si Gaps in Passivated IBC Solar Cells

We investigate factors that are critical for the performance of interdigitated back contact (IBC) solar cells based on polycrystalline silicon (poly-Si) passivated contacts. During patterning of doped lines using direct plasma deposition through a shadow mask, we show that the intrinsic poly-Si gap becomes contaminated with dopants, leading to shunting. Possible contamination mechanisms during masked deposition and high- temperature annealing are tested. Strategies developed to mitigate the contamination, such as reactive ion etching after deposition and amorphous to poly-Si crystallization in oxygen, will lead to improved IBC fabrication methods.

14 SOLAR ENERGY↗