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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

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NASA NTRS1992

Innovative techniques for the production of energetic radicals for lunar processing including cold plasma processing of local planetary ores

Hydrogen reduction of ilmenite has been studied by a number of investigators as a potential means for recovery of oxygen from lunar soil. Interest in this process has always rested with the simplicity of the flow diagram and the utilization of established technology. Effective utilization of hydrogen in the reduction process at temperatures of 1200 C and below has always been disappointing and, as such, has led other investigators to focus attention on other systems. Effective utilization of hydrogen in the reduction of ilmenite can be significantly enhanced in the presence of a non-equilibrium hydrogen plasma. Ilmenite at solid specimen temperatures of 600 C to 970 C were reacted in a hydrogen plasma. Those experiments revealed that hydrogen utilization can be significantly enhanced. At a specimen temperature of 850 C the fraction of H2 reacted was 24 percent compared to the 7 percent theoretical limit calculated with thermodynamic theory for the same temperature. An added advantage for a hydrogen plasma involves further reduction of TiO2. Reduction of the iron oxide in ilmenite yields TiO2 and metallic iron as by products. Titanium forms a number of oxides including TiO, Ti2O3, Ti3O5 and the Magneli oxides (Ti4O7 to Ti50O99). In conventional processing of ilmenite with hydrogen it is possible to reduce TiO2 to Ti7O13 within approximately an hour, but with poor utilization of hydrogen on the order of one mole of H2 per thousand. In the cold or non-equilibrium plasma TiO2 can be rapidly reduced to Ti2O3 with hydrogen utilization exceeding 10 percent. Based on design considerations of the plasma reactor greater utilization of the hydrogen in the reduction of TiO2 is possible.

Bullard, D.↗

DOE OSTI2025

A neural master equation framework for multiscale modeling of molecular processes: application to atomic-scale plasma processes

Plasma-surface interactions (PSI) play a crucial role in microelectronics fabrication; however, their multiscale nature and array of complex, often unknown interactions make computational modeling of PSIs extremely difficult. To this end, we propose a general neural master equation (NME) framework that uses master equations to describe the dynamics of a molecular process, wherein neural networks learned from atomistic simulations represent unknown transitions between different system states. By leveraging the physics-based structure of master equations and data-driven state transitions, the NME framework promotes generalizability and physics interpretability, and can bridge disparate length and time scales. The framework is demonstrated for multiscale modeling of Si atomic layer etching and reactive ion etching, where the learned NME-based surface kinetic models exhibit good predictive and extrapolative capabilities for predicting experimentally relevant observables as a function of process parameters. The NME-based surface kinetic models obey physical constraints, which are violated in models based on neural ordinary differential equations. The proposed NME framework for multiscale modeling of molecular processes can pave the way for the discovery of new chemistries and materials in atomic-scale plasma processes.

Chemical engineering↗

DOE OSTI2026

Recent progress in atomic-scale controlled plasma processing

Atomic-scale control in plasma processing is becoming increasingly critical for fabricating of advanced semiconductor devices, particularly as the industry shifts toward three-dimensional (3D) architectures and high-aspect-ratio (HAR) structures. This review presents a comprehensive overview of recent developments in atomic-scale controlled plasma processes, organized along two key directions: the hierarchical structure of plasma–surface interactions and the generational evolution of atomic layer processing (ALP) technologies. We examined the gas phase, where molecular design enables selective generation of ions and radicals; the boundary layer, where transport phenomena govern species delivery into nanoscale features, and the surface, where temperature-dependent reactions and cyclic processing determine etching selectivity and precision. Building on this foundation, we outline five generations of ALP—from thermal atomic layer deposition to transport-aware, temporally and structurally decoupled processes—highlighting the increasing sophistication of process control. The review further explores the transition from empirical recipe development to science-based, data-driven methodologies. By integrating quantum-chemical modeling, advanced diagnostics, and machine learning, we demonstrated how predictive models can link plasma species composition to process outcomes, enabling autonomous and adaptive control strategies. Finally, this review discusses the broader societal implications of plasma process innovation through the E4 quartet: energy and resource efficiency, environmental sustainability, evolutionary advancement, and educational promotion. These principles guide the development of sustainable and intelligent atomic-scale manufacturing technologies that are not only technically advanced but also socially responsible.

Ishikawa, Kenji [Nagoya Univ. (Japan)] (ORCID:0000↗

NASA NTRS2000

Ionization Properties of Molecules Commonly Used for Plasma Processing of Semi-Conductors

Two types of processes are involved in plasma processing of semi-conductors. They are: plasma etching or cleaning and plasma deposition of the semi-conducting materials. For plasma etching of semi-conductors mostly halogen containing gases are used as additives to gases such as O2 and N2. For plasma deposition gases such as C2H2, SiH4, Si2H6 have been tested in the past. For an optimal performance of a reactor it is important to model the plasma. In this modeling effort electron impact excitation and ionization cross sections play a central role. For ionization balance calculations values of ionization cross sections are needed. Ion molecule reactions determine the ultimate composition of the plasma. Recently it has been discovered that the by products of many of these plasmas are per fluro hydrocarbons (PFCs) which are highly infrared absorbing species and have long life times in the atmosphere. They cause global warming. A lot of research is being pursued at the present time to find alternative molecules which do not produce global warming gases as the and product of the plasma processing reactor. There is also interest in the ionization and dissociative ionization properties of these molecules from the point view of the plasma abatement of the pollutant gases at the exhaust of the semi-conductor processing reactors. At the conference ionization and dissociative ionization properties of some of these molecules will be presented.

Srivastava, S. K.↗

DOE OSTI2026

Transition Metal Dichalcogenide MoS 2 : Oxygen and Fluorine Functionalization for Selective Plasma Processing

Low-temperature plasma processing is a promising technique for tailoring transition metal dichalcogenides (TMDs). For chalcogen substitution processing, a key challenge is to identify the ion energy window that enables selective chalcogen removal while preserving the metal lattice. Using ab initio molecular dynamics (AIMD), we demonstrate that oxygen and fluorine functionalization widen the processing window by significantly lowering the sulfur sputtering energy threshold (E sputt,S ) of MoS 2 from ∼30 to ∼10 eV via formation of sputtering products such as SO 2 and SF n . Additionally, we show that experimentally relevant cryogenic temperatures strongly affect E sputt,S (T). The dependence is confirmed via AIMD and also predicted by a mechanistic parameter-free theory, suggesting that E sputt (T) generalizes to other TMDs, functionalizations, and surface impact conditions. Our results highlight oxygen/fluorine functionalization, ionic impact angle, and material temperature to be key control parameters for selective, damage-controlled chalcogen removal in TMD processing.

Polyachenko, Yury [Princeton Plasma Physics Labora↗

NASA NTRS1987

Simulations of auroral plasma processes - Electric fields, waves and particles

Plasma processes driven by current sheets of finite thicknesses in an ambient magnetized plasma are studied using a 2 1/2 dimensional particle-in-cell code, and similarities are found between simulated plasma processes and those observed in the auroral plasma. Current sheets are shown to be bounded by large perpendicular electric fields occurring near their edges above the conducting boundary. Shaped potential structures form when the current sheets are narrow, and when the current sheets are wide, potential structures develop a significant parallel potential drop such that the electrons are accelerated upwards. Downward parallel electric fields of variable strength are noted in the downward current region, and double layer formation is seen in both narrow and wide current sheets. High frequency oscillations near the electron plasma frequency and its harmonic are seen, and low frequency waves are observed.

Singh, Nagendra↗

NASA NTRS2008

Plasma Processing of Lunar Regolith Simulant for Diverse Applications

Versatile manufacturing technologies for extracting resources from the moon are needed to support future space missions. Of particular interest is the production of gases and metals from lunar resources for life support, propulsion, and in-space fabrication. Deposits made from lunar regolith could yield highly emissive coatings and near-net shaped parts for replacement or repair of critical components. Equally important is development of high fidelity lunar simulants for ground based validation of potential lunar surface operations. Described herein is an innovative plasma processing technique for insitu production of gases, metals, coatings, and deposits from lunar regolith, and synthesis of high fidelity lunar simulant from NASA issued lunar simulant JSC-1. Initial plasma reduction trials of JSC-1 lunar simulant have indicated production of metallic iron and magnesium. Evolution of carbon monoxide has been detected subsequent to reduction of the simulant using the plasma process. Plasma processing of the simulant has also resulted in glassy phases resembling the volcanic glass and agglutinates found in lunar regolith. Complete and partial glassy phase deposits have been obtained by varying the plasma process variables. Experimental techniques, product characterization, and process gas analysis will be discussed.

Schofield, Elizabeth C.↗

NASA NTRS1993

Numerical simulation of plasma processes driven by transverse ion heating

The plasma processes driven by transverse ion heating in a diverging flux tube are investigated with numerical simulation. The heating is found to drive a host of plasma processes, in addition to the well-known phenomenon of ion conics. The downward electric field near the reverse shock generates a doublestreaming situation consisting of two upflowing ion populations with different average flow velocities. The electric field in the reverse shock region is modulated by the ion-ion instability driven by the multistreaming ions. The oscillating fields in this region have the possibility of heating electrons. These results from the simulations are compared with results from a previous study based on a hydrodynamical model. Effects of spatial resolutions provided by simulations on the evolution of the plasma are discussed.

Singh, Nagendra↗

DOE OSTI2026

Advancing In-Situ Plasma Processing for SRF Cavities at Fermilab

This talk presents Fermilab’s experience with plasma processing applied to both elliptical and low-beta superconducting RF cavities. The development and implementation of the technique are compared across different geometries, with particular emphasis on constraints imposed by cryomodule assembly configurations. The talk also reports on systematic studies aimed at optimizing the processing recipe, including the exploration of various inert gas mixtures and oxygen concentrations. These results aim at providing guidance for tailoring plasma processing conditions to different cavity types and advancing plasma processing applicability in operational cryomodules.

Giaccone, Bianca [Fermilab] (ORCID:000000027275846↗

DOE OSTI2026

Advancing In-Situ Plasma Processing for SRF Cavities at Fermilab

Giaccone, Bianca [Fermilab] (ORCID:000000027275846↗

NASA NTRS1998

Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

Lampkin, Gregory↗

DOE OSTI2026

First plasma processing trial of a quarter-wave resonator cryomodule at the Facility for Rare Isotope Beams

Studies of plasma processing for reduction of field emission in quarter-wave resonator (QWR) cryomodules are underway at the Facility for Rare Isotope Beams (FRIB), where a total of 104 QWRs are presently in operation. Driving the plasma with a higher-order mode allows for less mismatch at the fundamental power coupler and higher plasma density. The first plasma processing trial for FRIB QWRs in a cryomodule was conducted in January 2024. In-bunker cold tests of the cryomodule showed a significant reduction in field emission x-rays after plasma processing.

Glow & corona plasma discharges↗

NASA NTRS2009

Two-Step Plasma Process for Cleaning Indium Bonding Bumps

A two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process.

Greer, Harold F.↗

NASA NTRS1988

Refilling of a plasmaspheric flux tube - Microscopic plasma processes

The paper elucidates those microscopic plasma processes (electrostatic shocks, pitch angle scattering of the ions, and ion perpendicular heating) which help in trapping and/or thermalizing the plasma in the flux tubes. The mechanism and conditions for electrostatic shock formation are discussed. It is shown that equatorial ion heating stops interhemispheric flow by setting up a potential barrier at the equator.

Singh, N.↗

NASA NTRS1997

Computational Modeling in Plasma Processing for 300 mm Wafers

Migration toward 300 mm wafer size has been initiated recently due to process economics and to meet future demands for integrated circuits. A major issue facing the semiconductor community at this juncture is development of suitable processing equipment, for example, plasma processing reactors that can accomodate 300 mm wafers. In this Invited Talk, scaling of reactors will be discussed with the aid of computational fluid dynamics results. We have undertaken reactor simulations using CFD with reactor geometry, pressure, and precursor flow rates as parameters in a systematic investigation. These simulations provide guidelines for scaling up in reactor design.

Meyyappan, Meyya↗

DOE OSTI2025

Plasma Processing for SSR Cavities

Overview of plasma processing setup for SSR1 cavities at IJCLab and for SSR2 cavities at Fermilab. Talk presented by Mattia Parise (Fermilab), Materials provided by Bianca Giaccone (Fermilab) and Camille Cheney (IJCLab).

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2025

Experimental Investigation of Plasma Processing for PIP-II SSR2 Cavities

Field emission and multipacting are critical factors that limit the achievable operational gradient of superconducting radio frequency (SRF) cavities. Plasma processing (PP) has been demonstrated as an effective in-situ technique for mitigating hydrocarbon-induced field emission and multipacting across a range of cavity geometries. In this work, we present the initial development and subsequent application of plasma processing for PIP-II type II spoke resonators (SSR2). The process was carried out at room temperature on an SSR2 cavity equipped with the CM-style high-power coupler and installed in the cryostat. Cavity performance was evaluated through comparative cold tests conducted before and after plasma processing.

Giaccone, Bianca [Fermilab] (ORCID:000000027275846↗

NASA NTRS1986

Plasma processes driven by current sheets and their relevance to the auroral plasma

Plasma processes dealing with ac and dc electric fields, the formation of ion beams and conics, and electron acceleration are considered, and similarities between simulation results and satellite-based observations are discussed. Electrostatic shock-type electric fields are found to occur near the current sheet edges, and double layers having upward electric fields form inside the sheet and are distinguishable from the large perpendicular electric fields only in wide sheets with thicknesses much greater than the ion Larmor radius. It is found that the most energetic ions have pitch angles near 90 deg, indicating a large perpendicular acceleration of the ions, and that the downward accelerating electrons inside the sheet are neither monoenergetic nor perfectly field aligned.

Singh, Nagendra↗