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Results for “Polycrystalline material”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Magnetic and Electrical Characteristics of Cobalt-Based Amorphous Materials and Comparison to a Permalloy Type Polycrystalline Material

Magnetic component designers are always looking for improved soft magnetic core materials to increase the efficiency, temperature rating and power density of transformers, motors, generators and alternators, and energy density of inductors. In this paper, we report on the experimental investigation of commercially available cobalt-based amorphous alloys which, in their processing, were subjected to two different types of magnetic field anneals: A longitudinal magnetic field anneal or a transverse magnetic field anneal. The longitudinal field annealed material investigated was Metglas 2714A. The electrical and magnetic characteristics of this material were investigated over the frequency range of 1 to 200 kHz and temperature range of 23 to 150 C for both sine and square wave voltage excitation. The specific core loss was lower for the square than the sine wave voltage excitation for the same maximum flux density, frequency and temperature. The transverse magnetic field annealed core materials include Metglas 2714AF and Vacuumschmelze 6025F. These two materials were experimentally characterized over the frequency range of 10 to 200 kHz for sine wave voltage excitation and 23 C only. A comparison of the 2174A to 2714AF found that 2714AF always had lower specific core loss than 2714A for any given magnetic flux density and frequency and the ratio of specific core loss of 2714A to 2714AF was dependent on both magnetic flux density and frequency. A comparison was also made of the 2714A, 2714AF, and 6025F materials to two different tape thicknesses of the polycrystalline Supermalloy material and the results show that 2714AF and 6025F have the lowest specific core loss at 100 kHz over the magnetic flux density range of 0.1 to 0.4 Tesla.

Wieserman, William R.↗
NASA NTRS1969

Preferred-orientation analysis of polycrystalline materials

Automatic device built around a goniometer examines characteristics of polycrystalline materials and determines preferred orientations of crystallites. It is automatically rotatable in each of two planes and has circuit regulated sequential rotation. A fixed X ray source in conjunction with a detector examines the material.

De Wys, E. C.↗
NASA NTRS1990

Review and statistical analysis of the ultrasonic velocity method for estimating the porosity fraction in polycrystalline materials

A review and statistical analysis of the ultrasonic velocity method for estimating the porosity fraction in polycrystalline materials is presented. Initially, a semi-empirical model is developed showing the origin of the linear relationship between ultrasonic velocity and porosity fraction. Then, from a compilation of data produced by many researchers, scatter plots of velocity versus percent porosity data are shown for Al2O3, MgO, porcelain-based ceramics, PZT, SiC, Si3N4, steel, tungsten, UO2,(U0.30Pu0.70)C, and YBa2Cu3O(7-x). Linear regression analysis produced predicted slope, intercept, correlation coefficient, level of significance, and confidence interval statistics for the data. Velocity values predicted from regression analysis for fully-dense materials are in good agreement with those calculated from elastic properties.

Roth, D. J.↗
NASA NTRS1991

Review and statistical analysis of the use of ultrasonic velocity for estimating the porosity fraction in polycrystalline materials

A review and statistical analysis of the ultrasonic velocity method for estimating the porosity fraction in polycrystalline materials is presented. Initially, a semiempirical model is developed showing the origin of the linear relationship between ultrasonic velocity and porosity fraction. Then, from a compilation of data produced by many researchers, scatter plots of velocity versus percent porosity data are shown for Al2O3, MgO, porcelain-based ceramics, PZT, SiC, Si3N4, steel, tungsten, UO2,(U0.30Pu0.70)C, and YBa2Cu3O(7-x). Linear regression analysis produces predicted slope, intercept, correlation coefficient, level of significance, and confidence interval statistics for the data. Velocity values predicted from regression analysis of fully-dense materials are in good agreement with those calculated from elastic properties.

Roth, D. J.↗
NASA NTRS2009

Development of Ceramic Solid-State Laser Host Material

Polycrystalline ceramic laser materials are gaining importance in the development of novel diode-pumped solid-state lasers. Compared to single-crystals, ceramic laser materials offer advantages in terms of ease of fabrication, shape, size, and control of dopant concentrations. Recently, we have developed Neodymium doped Yttria (Nd:Y2O3) as a solid-state ceramic laser material. A scalable production method was utilized to make spherical non agglomerated and monodisperse metastable ceramic powders of compositions that were used to fabricate polycrystalline ceramic material components. This processing technique allowed for higher doping concentrations without the segregation problems that are normally encountered in single crystalline growth. We have successfully fabricated undoped and Neodymium doped Yttria material up to 2" in diameter, Ytterbium doped Yttria, and erbium doped Yttria. We are also in the process of developing other sesquioxides such as scandium Oxide (Sc2O3) and Lutesium Oxide (Lu2O3) doped with Ytterbium, erbium and thulium dopants. In this paper, we present our initial results on the material, optical, and spectroscopic properties of the doped and undoped sesquioxide materials. Polycrystalline ceramic lasers have enormous potential applications including remote sensing, chem.-bio detection, and space exploration research. It is also potentially much less expensive to produce ceramic laser materials compared to their single crystalline counterparts because of the shorter fabrication time and the potential for mass production in large sizes.

Prasad, Narasimha S.↗
NASA NTRS1972

Handbook of the optical, thermal and mechanical properties of six polycrystalline dielectric materials

The design data for six polycrystalline dielectric materials are presented to describe the optical, thermal, and mechanical properties. The materials are aluminum oxide, calcium fluoride, magnesium fluoride, magnesium oxide, silicon dioxide, and titanium dioxide. The primary interest is in the polycrystalline state, although single crystal data are included when appropriate. The temperature range is room temperature to melting point. The wavelength range is from near ultraviolet to near infrared.

Dewitt, D. P.↗
NASA NTRS1982

Process Research On Polycrystalline Silicon Material (PROPSM)

Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated.

Culik, J. S.↗
NASA NTRS1984

Process Research on Polycrystalline Silicon Material (PROPSM)

Results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Very small grain or short minority-carrier diffusion length silicon was used. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is sometimes 20 to 40 mV less. The goal was to minimize variations in open-circuit voltage and fill-factor caused by defects by passivating these defects using a hydrogenation process. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystaline silicon solar cells.

Culik, J. S.↗
NASA NTRS1982

Process Research On Polycrystalline Silicon Material (PROPSM)

The mechanisms limiting performance in polycrystalline silicon was determined. The initial set of experiments in this task entails the fabrication of cells of various thicknesses for four different bulk resistivities between 0.1 and 10 omega-cm. The results for the first two lots are presented.

Wohlgemuth, J. H.↗
NASA NTRS1984

Process Research of Polycrystalline Silicon Material (PROPSM)

A passivation process (hydrogenation) that will improve the power generation of solar cells fabricated from presently produced, large grain, cast polycrystalline silicon (Semix), a potentially low cost material are developed. The first objective is to verify the operation of a DC plasma hydrogenation system and to investigate the effect of hydrogen on the electrical performance of a variety of polycrystalline silicon solar cells. The second objective is to parameterize and optimize a hydrogenation process for cast polycrystalline silicon, and will include a process sensitivity analysis. The sample preparation for the first phase is outlined. The hydrogenation system is described, and some early results that were obtained using the hydrogenation system without a plasma are summarized. Light beam induced current (LBIC) measurements of minicell samples, and their correlation to dark current voltage characteristics, are discussed.

Culik, J. S.↗
NASA NTRS1984

Process Research of Polycrystalline Silicon Material (PROPSM)

An investigation was begun into the usefulness of molecular hydrogen annealing on polycrystalline solar cells. No improvement was realized even after twenty hours of hydrogenation. Thus, samples were chosen on the basis of: (1) low open circuit voltage; (2) low shunt conductance; and (3) high light generated current. These cells were hydrogenated in molecular hydrogen at 300 C. The differences between the before and after hydrogenation values are so slight as to be negligible. These cells have light generated current densities that indicate long minority carrier diffusion lengths. The open circuit voltage appears to be degraded, and quasi-neutral recombination current enhanced. Therefore, molecular hydrogen is not usful for passivating electrically active defects.

Culik, J. S.↗
NASA NTRS1983

Process Research on Polycrystalline Silicon Material (PROPSM)

The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.

Culik, J. S.↗
NASA NTRS1982

Process Research on Polycrystalline Silicon Material (PROPSM)

The investigation of the performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was continued by fabricating a set of minicell wafers on a selection of 10 cm x 10 cm wafers. A minicell wafer consists of an array of small (approximately 0.2 sq cm in area) photodiodes which are isolated from one another by a mesa structure. The junction capacitance of each minicell was used to obtain the dopant concentration, and therefore the resistivity, as a function of position across each wafer. The results indicate that there is no significant variation in resistivity with position for any of the polycrystalline wafers, whether Semix or Wacker. However, the resistivity of Semix brick 71-01E did decrease slightly from bottom to top.

Culik, J. S.↗