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At least 19 records

Low-Energy Proton Testing Methodology

Use of low-energy protons and high-energy light ions is becoming necessary to investigate current-generation SEU thresholds. Systematic errors can dominate measurements made with low-energy protons. Range and energy straggling contribute to systematic error. Low-energy proton testing is not a step-and-repeat process. Low-energy protons and high-energy light ions can be used to measure SEU cross section of single sensitive features; important for simulation.

Pellish, Jonathan A.↗

Summary of Proton Test on the Actel RH1020 at Indiana University

Proton tests were performed on the Actel RH1020 at the Indiana University Cyclotron Facility. The devices were active during the irradiation. Upsets and currents were monitored in real time with the devices being clocked at 1 MHz. The results of the tests are summarized.

Katz, Richard↗

Proton Testing: Opportunities, Pitfalls and Puzzles

Although proton SEE testing can place constraints on some heavy-ion SEE susceptibilities, it is important to quantify residual risk that protons may not reveal all SEE susceptibilities in a system. We examine the relative strengths and limitations of proton and heavy-ion SEE testing and how these may be affected by technology scaling and high-Z materials in the device.

Protons↗

Piecewise simulaton proton test of gallium arsenide and thin silicon solar cells

Gallium Arsenide (GaAs) solar cells are viewed as a potential primary power source on certain future Earth orbiting satellites. However, the relative merits of gallium arsenide over silicon in a space radiation environment are largely unknown because a general degradation model for gallium arsenide does not exist. The results of a test simulating the proton radiation environment existing in a polar orbit and the concomitant effects on GaAs and thin silicon (Si) solar cells are presented. The objectives and methodology of the simulation test were discussed. The electrical characteristics of GaAs and Si solar cells are given in graph form. It was concluded that GaAs cells are viable for use on satellites in low Earth orbit.

Peterson, D. G.↗

Proton Test Report Micropac 66212-300 Optocoupler

The purpose of this test was to determine the displacement damage and total ionizing dose sensitivity of Micropac’s 66212 optocoupler. During the test, the device was exposed to protons. Device parameters such as CTR, reverse current, and forward voltage were investigated.

displacement damage↗

Proton Testing of nVidia Jetson TX1

Single-Event Effects (SEE) testing was conducted on the nVidia Jetson TX1 System on Chip (SOC); herein referred to as device under test (DUT). Testing was conducted at Massachusetts General Hospitals (MGH) Francis H. Burr Proton Therapy Center on October 16th, 2016 using 200MeV protons. This testing trip was purposed to provide a baseline assessment of the radiation susceptibility of the DUT as no previous testing had been conducted on this component.

Proton testing↗

Proton Testing of nVidia GTX 1050 GPU

Single-Event Effects (SEE) testing was conducted on the nVidia GTX 1050 Graphics Processor Unit (GPU); herein referred to as device under test (DUT). Testing was conducted at Massachusetts General Hospitals (MGH) Francis H. Burr Proton Therapy Center on April 9th, 2017 using 200-MeV protons. This testing trip was purposed to provide a baseline assessment of the radiation susceptibility of the DUT as no previous testing had been conducted on this component.

Proton testing↗

Medical Proton Test Facilities (MPTFs) Lessons Learned on the Unique Aspects for Single Event Effects (SEE) Testing of Electronics in the 200 MeV Regime

Ever since the closure of the Indiana University Cyclotron Facility (IUCF) in 2014, there has been an increasing use of medical proton therapy facilities (MPTF) for SEE testing with protons in the 200 MeV or greater regime. This talk covers some of the unique features and considerations for utilizing MPTFs including both logistical and technical aspects. This presentation provides an overview of lessons learned for SEE testing at MPTFs.

Medical Proton Test Facilities (MPTFs)↗

Proton Testing of nVidia GTX 1050 GPU, Part 2

Single-Event Effects (SEE) testing was conducted on the nVidia GTX 1050 Graphics Processor Unit (GPU); herein referred to as device under test (DUT). Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on April 28th, 2018 using 200-MeV protons. This testing trip was purposed to provide additional radiation susceptibility data from payloads compiled in Q3FY18. While not all radiation-induced errors are critical, the effects on the application need to be considered. More so, failure of the device and an inability to reset itself should be considered detrimental to the application. Radiation effects on electronic components are a significant reliability issue for systems intended for space.

Single-Event Effects (SEE)↗

Board Level Proton Testing Book of Knowledge for NASA Electronic Parts and Packaging Program

This book of knowledge (BoK) provides a critical review of the benefits and difficulties associated with using proton irradiation as a means of exploring the radiation hardness of commercial-off-the-shelf (COTS) systems. This work was developed for the NASA Electronic Parts and Packaging (NEPP) Board Level Testing for the COTS task. The fundamental findings of this BoK are the following. The board-level test method can reduce the worst case estimate for a board's single-event effect (SEE) sensitivity compared to the case of no test data, but only by a factor of ten. The estimated worst case rate of failure for untested boards is about 0.1 SEE/board-day. By employing the use of protons with energies near or above 200 MeV, this rate can be safely reduced to 0.01 SEE/board-day, with only those SEEs with deep charge collection mechanisms rising this high. For general SEEs, such as static random-access memory (SRAM) upsets, single-event transients (SETs), single-event gate ruptures (SEGRs), and similar cases where the relevant charge collection depth is less than 10 μm, the worst case rate for SEE is below 0.001 SEE/board-day. Note that these bounds assume that no SEEs are observed during testing. When SEEs are observed during testing, the board-level test method can establish a reliable event rate in some orbits, though all established rates will be at or above 0.001 SEE/board-day. The board-level test approach we explore has picked up support as a radiation hardness assurance technique over the last twenty years. The approach originally was used to provide a very limited verification of the suitability of low cost assemblies to be used in the very benign environment of the International Space Station (ISS), in limited reliability applications. Recently the method has been gaining popularity as a way to establish a minimum level of SEE performance of systems that require somewhat higher reliability performance than previous applications. This sort of application of the method suggests a critical analysis of the method is in order. This is also of current consideration because the primary facility used for this type of work, the Indiana University Cyclotron Facility (IUCF) (also known as the Integrated Science and Technology (ISAT) hall), has closed permanently, and the future selection of alternate test facilities is critically important. This document reviews the main theoretical work on proton testing of assemblies over the last twenty years. It augments this with review of reported data generated from the method and other data that applies to the limitations of the proton board-level test approach. When protons are incident on a system for test they can produce spallation reactions. From these reactions, secondary particles with linear energy transfers (LETs) significantly higher than the incident protons can be produced. These secondary particles, together with the protons, can simulate a subset of the space environment for particles capable of inducing single event effects (SEEs). The proton board-level test approach has been used to bound SEE rates, establishing a maximum possible SEE rate that a test article may exhibit in space. This bound is not particularly useful in many cases because the bound is quite loose. We discuss the established limit that the proton board-level test approach leaves us with. The remaining possible SEE rates may be as high as one per ten years for most devices. The situation is actually more problematic for many SEE types with deep charge collection. In cases with these SEEs, the limits set by the proton board-level test can be on the order of one per 100 days. Because of the limited nature of the bounds established by proton testing alone, it is possible that tested devices will have actual SEE sensitivity that is very low (e.g., fewer than one event in 1 × 10(exp 4) years), but the test method will only be able to establish the limits indicated above. This BoK further examines other benefits of proton board-level testing besides hardness assurance. The primary alternate use is the injection of errors. Error injection, or fault injection, is something that is often done in a simulation environment. But the proton beam has the benefit of injecting the majority of actual SEEs without risk of something being missed, and without the risk of simulation artifacts misleading the SEE investigation.

Guertin, Steven M.↗

Summary of Proton Test on the Quick Logic QL3025 at Indiana University

This issue of the Programmable Logic Application Notes is a compilation of topics: (1) Proton irradiation tests were performed on the Quick Logic QL3025 at the Indian University Cyclotron facility. The devices, tests, and results are discussed; (2) The functional failure of EEPROM's in heavy ion environment is presented; (3) the Act 1 architecture is summarized; (4) Antifuse hardness and hardness testing is updated; the single even upset (SEU) response of hardwired flip-flops is also presented; (4) Total dose results of the ACT 2 and ACT 3 circuits is presented in a chart; (5) Recent sub-micron devices testing of total dose is presented in a chart along with brief discussion; and (6) a reference to the WWW site for more articles of interest.

Katz, Richard↗

Single-event Effect Report for EPC Series eGaN FETs: Proton Testing for SEE and TNID Effects

Previous testing of the Enhanced Power Conversion (EPC) eGaN FETs showed sensitivity to destructive single-event effects (SEE) effects to heavy ions. The presence of tungsten plugs in the gate area raises concerns that the device may be vulnerable to SEE from protons. Irradiation of biased and unbiased devices with heavy ion has results in some damage suspected of being due to total non-ionizing dose (TNID). Proton irradiation is a better radiation type to study this effect. This study presents the results of testing device with protons for SEE and TNID. No SEE in the EPC2012 device, the most sensitive device to SEE, were seen with 53 MeV protons at several angles. The devices continued to function after 1.5 Mrad (Si) of proton dose with only a slight shift in parameters. These results suggest that gross TNID will not be a factor in using these devices nor suffer from SEE due to protons. However, the device should be tested at with 500 MeV protons to guarantee to immunity proton SEE.

Scheick, Leif↗

Proton Testing of nVidia Jetson TX2

Single-Event Effects (SEE) testing was conducted on the nVidia Jetson TX2 System on Chip (SOC). Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.

System on Chip (SOC)↗

Proton Testing of AMD Ryzen 3 1200 Microprocessors

Single-Event Effects (SEE) testing was conducted on the AMD Ryzen 3 1200 microprocessor. Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.

single event functional interrupt (SEFI)↗

Proton Testing of AMD Ryzen 3 2200G Microprocessors

Single-Event Effects (SEE) testing was conducted on the AMD Ryzen 3 2200G microprocessor with integrated graphics. Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.

radiation tesing↗