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At least 19 records

All sources NASA NTRS DOE OSTI

NASA NTRS2010

Longitudinal Proximity Effect, Lateral Inverse Proximity Effect, and Nonequilibrium Superconductivity in Transition-edge Sensors

We have recently shown that normal-metal/superconductor (N/S) bilayer TESs (superconducting Transition-Edge Sensors) exhibit weak-link behavior. Our measurements were explained in terms of a longitudinal proximity effect model in which superconducting order from the higher transition temperature leads is induced into the TES bilayer plane over remarkably long distances (up to 290 micron). Here we extend our understanding to include TESs with added noise-mitigating normal-metal structures (N structures). We explain our results of an effect converse to the longitudinal proximity effect (LoPE), the lateral inverse proximity effect (LaiPE), for which the order parameter in the N/S bilayer is reduced due to the neighboring N structures. We present resistance and critical current measurements as a function of temperature and magnetic field taken on square Mo/Au bilayer TESs with lengths ranging from 8 to 130 micron with and without added N structures. We observe the inverse proximity effect on the bilayer over in-plane distances many tens of microns and find the transition shifts to lower temperature scale approximately as the inverse square of the in-plane N-structure separation distance, without appreciable broadening of the transition width. We find TESs with added Au structures exhibit weak-link behavior as evidenced by exponential temperature dependence of the critical current and Josephson-like oscillations of the critical current with applied magnetic field. We also present evidence for nonequilbrium superconductivity and estimate a quasiparticle lifetime of 1.8 x 10(exp -10) s for the bilayer. The LoPE model is also used to explain the increased conductivity at temperatures above the bilayer's steep resistive transition

Sadleir, John E.↗

NASA NTRS2010

Longitudinal Proximity Effect, Lateral Inverse Proximity Effect, and Nonequilibrium Superconductivity in Transition-Edge Sensors

We have recently shown that normal-metal/superconductor (N /S) bilayer TESs (superconducting Transition-Edge Sensors) exhibit weak-link behavior. Our measurements were explained in terms of a longitudinal proximity effect model in which superconducting order from the higher transition temperature leads is induced into the TES bilayer plane over remarkably long distances (up to 290 micron). Here we extend our understanding to include TESs with added noise-mitigating normal-metal structures (N structures). We explain our results in terms of an effect converse to the longitudinal proximity effect (LoPE), the lateral inverse proximity effect (LaiPE), for which the order parameter in the N /S bilayer is reduced due to the neighboring N structures. We present resistance and critical current measurements as a function of temperature and magnetic field taken on square Mo/Au bilayer TESs with lengths ranging from 8 to 130 micron with and without added N structures. We observe the inverse proximity effect on the bilayer over in-plane distances many tens of microns and find the transition shifts to lower temperatures scale approximately as the inverse square of the in-plane N-structure separation distance, without appreciable broadening of the transition width. We find TESs with added Au structures exhibit weak-link behavior as evidenced by exponential temperature dependence of the critical current and Josephson-like oscillations of the critical current with applied magnetic field. We also present evidence for nonequilbrium superconductivity and estimate a quasiparticle lifetime of 1.8 x 10(exp -10) s for the bilayer. The LoPE model is also used to explain the increased conductivity at temperatures above the bilayer's steep resistive transition.

Sadleir, John E.↗

DOE OSTI2020

Layer-resolved magnetic proximity effect in van der Waals heterostructures

Magnetic proximity effects are integral to manipulating spintronic, superconducting, excitonic and topological phenomena in heterostructures. These effects are highly sensitive to the interfacial electronic properties, such as electron wavefunction overlap and band alignment. The recent emergence of magnetic two-dimensional materials opens new possibilities for exploring proximity effects in van der Waals heterostructures. In particular, atomically thin CrI 3 exhibits layered antiferromagnetism, in which adjacent ferromagnetic monolayers are antiferromagnetically coupled. In this paper, we report a layer-resolved magnetic proximity effect in heterostructures formed by monolayer WSe 2 and bi/trilayer CrI 3 . By controlling the individual layer magnetization in CrI 3 with a magnetic field, we show that the spin-dependent charge transfer between WSe 2 and CrI 3 is dominated by the interfacial CrI 3 layer, while the proximity exchange field is highly sensitive to the layered magnetic structure as a whole. In combination with reflective magnetic circular dichroism measurements, these properties allow the use of monolayer WSe 2 as a spatially sensitive magnetic sensor to map out layered antiferromagnetic domain structures at zero magnetic field as well as antiferromagnetic/ferromagnetic domains at finite magnetic fields. Our work reveals a way to control proximity effects and probe interfacial magnetic order via van der Waals engineering.

36 MATERIALS SCIENCE↗

NASA NTRS2011

Proximity Effects and Nonequilibrium Superconductivity in Transition-Edge Sensors

We have recently shown that normal-metal/superconductor (N/S) bilayer TESs (superconducting Transition-Edge Sensors) exhibit weak-link behavior.l Here we extend our understanding to include TESs with added noise-mitigating normal-metal structures (N structures). We find TESs with added Au structures also exhibit weak-link behavior as evidenced by exponential temperature dependence of the critical current and Josephson-like oscillations of the critical current with applied magnetic field. We explain our results in terms of an effect converse to the longitudinal proximity effect (LoPE) 1, the lateral inverse proximity effect (LaiPE), for which the order parameter in the N/S bilayer is reduced due to the neighboring N structures. Resistance and critical current measurements are presented as a function of temperature and magnetic field taken on square Mol Au bilayer TESs with lengths ranging from 8 to 130 {\mu}m with and without added N structures. We observe the inverse proximity effect on the bilayer over in-plane distances many tens of microns and find the transition shifts to lower temperatures scale approximately as the inverse square of the in- plane N-structure separation distance, without appreciable broadening of the transition width. We also present evidence for nonequilbrium superconductivity and estimate a quasiparticle lifetime of 1.8 \times 10-10 s for the bilayer. The LoPE model is also used to explain the increased conductivity at temperatures above the bilayer's steep resistive transition.

Sadleir, John E.↗

DOE OSTI2026

Suppressing proximity effects during rapid serial two-photon lithography through tuning of reaction–diffusion kinetics

The ability of two-photon lithography (TPL) to print deterministic nanoporous 3D structures is highly valuable for many applications. However, it is challenging to print such structures rapidly due to the proximity effects that cause closely spaced features to enlarge and merge. A key challenge is the limited understanding of the origins and spatiotemporal dynamics of the long-range proximity effects that extend beyond the optical focal spot. Here, we empirically investigate these proximity effects in serial TPL using custom-made acrylate-based photoresists. We demonstrate that the complex spatiotemporal dynamics of the proximity effects can be explained through the kinetics of the reaction–diffusion photopolymerization mechanisms that underlie the curing process. Specifically, we show that the proximity effects arise due to comparable timescales of reaction and diffusion of oxygen. Furthermore, we demonstrate that long-range proximity effects can be suppressed by introducing phenolic inhibitors, which reduce oxygen consumption through non-inhibiting side reactions and promote faster termination of curing reactions. These insights enabled improving the linewidths from >400 to 260 nm during printing of nanoporous 3D woodpiles at scanning speeds of 50 mm s −1 . Thus, the knowledge generated here can be applied to deterministically tune the proximity effects and enable rapid printing of high-resolution nanoporous 3D structures.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Interfacial alloying contributions to the magnetic proximity effect in Pt/dysprosium iron garnet

The magnetic proximity effect (MPE), a magnetic response from a heavy metal layer induced by an adjacent magnetic layer, plays an important role in the behavior of heavy-metal/ferro- or ferrimagnet thin film heterostructures. However, in the case of heavy-metal/rare earth iron garnet bilayers the presence and magnitude of the MPE has been debated. We previously reported an MPE in a Pt/dysprosium iron garnet (DyIG) heterostructure where the two layers were grown without breaking vacuum, finding that the magnetic moment present in the Pt layer scales with the magnitude of the DyIG moment and varies nonmonotonically through the DyIG compensation temperature. However, the origin of the magnetic signal from the Pt layer was not identified. In contrast, Pt/DyIG grown with a vacuum break did not exhibit an MPE. Here we investigate the origin of the magnetic moment in the Pt layer using x-ray absorption spectroscopy, x-ray circular dichroism, composition mapping and simulations of ion bombardment. In conclusion, the results are consistent with the presence of an intermixed Fe-Dy-Pt interfacial alloy layer formed during the growth of the Pt on the DyIG and resulting in a measurable MPE.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Proximity Effects and Topological Spin Currents in van der Waals Heterostructures (Final Report)

The major goal of this grant has been to study spin-polarized topological edge states. The original proposal was focused specifically on those of the quantum anomalous Hall (QAH) effect, which was proposed to be realizable via a (simultaneous) magnetic and spin-orbit proximity effect in graphene. En route to realizing the QAH effect, the goal was also to study the newly-discovered 2D magnetic insulators, which have finally been isolated in the single-to-few atomic layers from compounds whose bulk properties have known since the 1970s, and the extent to which magnetic effects could be seen in graphene via proximity coupling. Since the original proposal, the scope of the work has expanded to include study of the topological edge states of the quantum spin Hall (QSH) effect and how they are modified by proximity effects and in twisted bilayers. The broader scientific context of the experiments in this proposal is to understand the physical mechanisms behind proximity effects in van der Waals heterostructures. Perhaps the ultimate scientific and technological goal of realizing topological states through proximity effects is the creation of Majorana zero modes in solid-state devices, which has been identified as a major priority in condensed-matter physics and quantum information because of the potential use of Majorana zero modes in topological quantum computing. Van der Waals materials offer advantages in this area because of the diversity of materials that can potentially be used and the unique device architectures that are possible using the van der Waals assembly techniques.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators

The extreme versatility of van der Waals materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. 1 For example, although graphene is inherently non-magnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway towards achieving a high-temperature quantum anomalous Hall effect. Here, we investigate heterostructures of graphene and chromium trihalide magnetic insulators (CrI 3 , CrBr 3 , and CrCl 3 ). Surprisingly, we are unable to detect a magnetic exchange field in the graphene, but instead discover proximity effects featuring unprecedented gate-tunability. The graphene becomes highly hole-doped due to charge transfer from the neighboring magnetic insulator, and further exhibits a variety of atypical gate-dependent transport features. The charge transfer can additionally be altered upon switching the magnetic states of the nearest CrI 3 layers. In conclusion, our results provide a roadmap for exploiting proximity effects arising in graphene coupled to magnetic insulators.

2D magnet↗

NASA NTRS2012

Can the Lateral Proximity Effect Be Used to Create the Superconducting Transition of a Micron-Sized TES?

Recent measurements of micron-sized Mo/Au bilayer Transition Edge Sensors (TESs) have demonstrated that the TES can behave like an S-S'-S weak link due to the lateral proximity effect from superconducting leads. In this regime the Tc is a function of bias current, and the effective Tc shifts from the bilayer Tc towards the lead Tc. We explore the idea that a micron-sized S-N-S weak link could provide a new method to engineer the TES Tc. This method would be particularly useful when small size requirements for a bilayer TES (such as for a hot-electron microbolometer) lead to undesirable shifts in the bilayer Te. We present measurements of a variety of micron-sized normal Au 'TES' devices with Nb leads. We find no evidence of a superconducting transition in the Au film of these devices, in dramatic contrast to the strong lateral proximity effect seen in micron-sized Mo/Au bilayer devices. The absence of a transition in these devices is also in disagreement with theoretical predictions for S-N-S weak links. We hypothesize that a finite contact resistance between the Nb and Au may be weakening the effect. We conclude that the use of the lateral proximity effect to create a superconducting transition will be difficult given current fabrication procedures.

Barrentine, E. M.↗

DOE OSTI2026

Embedded Ferroelectric Nanoclusters can drive Polarization Reversal in a Non-Ferroelectric Polar Film via the Proximity Effect

Heterogeneous nucleation from defects dominates the electric field required for polarization switching of ferroelectrics. Here, we consider the switching of a nominally non-switchable polar thin film of AlN due to the proximity effect arising from embedded ferroelectric nanoclusters of Al 1-x Sc x N. Using a Landau-Ginzburg-Devonshire thermodynamic approach and finite element modeling, we study the influence of nanocluster shape on polarization switching and domain nucleation emerging in AlN. The ferroelectric nanocluster boundary is modeled as a thin layer transitioning from Al 1-x Sc x N to AlN. We analyze the conditions under which polarization switching in the AlN film occurs at coercive fields significantly lower than its dielectric breakdown field. In the presence of spike-like Al 1-x Sc x N nanoclusters, the proximity effect enables switching of the spontaneous polarization in AlN and significantly reduces the corresponding coercive field. The internal field, which is depolarizing inside the AlN (due to its larger spontaneous polarization) and polarizing within the ferroelectric Al 1-x Sc x N nanoclusters (due to its smaller spontaneous polarization), lowers the potential barrier in the clusters and nucleates nanodomains at the Al 1-x Sc x N-AlN interface, forming localized regions of reversed polarization. Proximity effect can thus provide a pathway towards "thawing" previously "frozen" ferroelectrics through engineered nucleation for memory, actuation and optical technologies.

36 MATERIALS SCIENCE↗

NASA NTRS1974

Results of wind tunnel tests at Mach 5 on the .004 scale model 2A configuration space shuttle to determine proximity effects and orbiter control effectiveness during orbiter/external tank abort separation (IAG)

Results from tests in the NASA/MSFC Trisonic Wind Tunnel on 0.004-Scale Orbiter and External Tank Force Models in Close Proximity (RTLS Abort Separation Conditions) are presented. The primary test objectives were to obtain data concerning proximity effects on the aerodynamic forces and moments experienced by Vehicle 2A Configuration Shuttle Orbiter and External Tank during an abort separation (Return to Launch Site) at a Mach number of 5. Additionally, data on orbiter control effectiveness during such an abort was obtained. Proximity effects were investigated for relative angles of incidence from minus 5 deg to plus 10 deg of the orbiter FRL with respect to the external tank centerline over a range of vertical and longitudinal displacements from the mated position to 2.5 tank diameters below and 3 tank diameters aft of the mated position.

Garton, W. P.↗

DOE OSTI2025

Magnetic Proximity Effects in Iron Germanium Telluride/Platinum Heterostructures

Van der Waals (vdW) magnetic materials have attracted considerable attention for use in spintronic devices such as those controlled by spin–orbit torque (SOT). Such SOT-driven devices are typically fabricated by bringing a vdW magnet in proximity to a spin–charge conversion layer to achieve current-driven magnetization switching. Here, we show that such structures fabricated with iron germanium telluride (FGT) and platinum can exhibit emergent magnetic properties, which we attribute to magnetic proximity effects at the FGT/Pt interface. These changes manifest as increased perpendicular magnetic anisotropy and the emergence of additional magnetization reversal steps as probed by magneto-transport, with the most significant changes appearing in thinner flakes. The behavior was found to be robust and consistently appeared in samples made with crystals from different vendors. In conclusion, our results demonstrate the potential for engineering vdW spintronic systems through magnetic proximity effects.

2D magnet↗

DOE OSTI2022

Spin–orbit coupling proximity effect in MoS 2 /Fe 3 GeTe 2 heterostructures

Layered two-dimensional (2D) magnet/semiconductor heterostructures combine spintronic and optoelectronic properties of constituent materials, leading to new magneto-optical and magnetoelectric phenomena such as spontaneous emission of helical light and enhanced Zeeman splitting in single photon emission. While prior focus was mostly on the magnetic proximity effect, where properties of 2D magnets are transferred to nonmagnetic 2D materials, the inverse effect of 2D semiconductors altering 2D magnets is much less understood. Here, we fabricated and studied van der Waals (vdW) heterostructures of 2D magnet Fe 3 GeTe 2 (FGT) and 2D semiconductor MoS 2 . With reflectance magnetic circular dichroism, we found that the coercive field of MoS 2 -covered FGT reduces compared with uncovered FGT, agreeing well with our first-principles calculations. With its strong spin–orbit coupling (SOC), MoS 2 effectively alters the crystal field of the adjacent FGT and its magnetic anisotropy. Furthermore, an unconventional two-step hysteresis loop emerges in MoS 2 /FGT as a result of the superposition of two regions of FGT: at the interface and away from the interface. Our experimental elucidation of the SOC proximity effect that MoS 2 exerts on FGT provides fundamental understanding for the rational development of 2D magnet/semiconductor heterostructures.

2D materials↗

NASA NTRS2009

Longitudinal Proximity Effects in Superconducting Transition-Edge Sensors

We have found experimentally that the critical current of a square superconducting transition-edge sensor (TES) depends exponentially upon the side length L and the square root of the temperature T. As a consequence, the effective transition temperature T(sub c) of the TES is current-dependent and at fixed current scales as 1/L(sup 2). We also have found that the critical current can show clear Fraunhofer-like oscillations in an applied magnetic field, similar to those found in Josephson junctions. The observed behavior has a natural theoretical explanation in terms of longitudinal proximity effects if the TES is regarded as a weak link between superconducting leads. We have observed the proximity effect in these devices over extraordinarily long lengths exceeding 100 microns.

Sadleir, John E.↗

NASA NTRS2009

Longitudinal Proximity Effects in Superconducting Transition-Edge Sensors

We have found experimentally that the critical current of a square thin-film superconducting transition-edge sensor (TES) depends exponentially upon the side length L and the square root of the temperature T, a behavior that has a natural theoretical explanation in terms of longitudinal proximity effects if the TES is regarded as a weak link between superconducting leads. As a consequence, the effective transition temperature T(sub c) of the TES is current-dependent and at fixed current scales as 1/L(sup 2). We also have found that the critical current can show clear Fraunhofer-like oscillations in an applied magnetic field, similar to those found in Josephson junctions. We have observed the longitudinal proximity effect in these devices over extraordinarily long lengths up to 290 micrometers, 1450 times the mean-free path.

Sadlier, John E.↗

NASA NTRS2010

Longitudinal Proximity Effects in Superconducting Transition-Edge Sensors

Sadleir, John E.↗

NASA NTRS2012

The Role of Proximity Effects in Transition-Edge Sensor Design and Performance

Transition-edge sensor (TES) microcalorimeters and bolometers are under development by numerous groups worldwide for a variety of applications involving the measurement of particle and photon radiation. Recent experimental and theoretical progress has led to the realization that the fundamental physics of some TES systems involves the longitudinal proximity effect between the electrical bias contacts and the TES. As such, these devices are described as SS'S (or SN'S) weak-links exhibiting Fraunhofer-like magnetic field dependence, and exponential temperature dependence, of the critical current. These discoveries, for the first time, provide a realistic theoretical framework for predicting the resistive transition as a function of temperature, current and magnetic field. In this contribution, we review the latest theoretical and experimental results and investigate how proximity effects play an important role in determining the resistive transition characteristics, which ultimately determines the dynamic range and energy resolution of TES detectors. We investigate how these effects could be utilized in device design to engineer desired transition characteristics for a given application.

Smith, Stephen J.↗

DOE OSTI2021

Large intrinsic anomalous Hall effect in SrIrO 3 induced by magnetic proximity effect

The anomalous Hall effect (AHE) is an intriguing transport phenomenon occurring typically in ferromagnets as a consequence of broken time reversal symmetry and spin-orbit interaction. It can be caused by two microscopically distinct mechanisms, namely, by skew or side-jump scattering due to chiral features of the disorder scattering, or by an intrinsic contribution directly linked to the topological properties of the Bloch states. Here we show that the AHE can be artificially engineered in materials in which it is originally absent by combining the effects of symmetry breaking, spin orbit interaction and proximity-induced magnetism. In particular, we find a strikingly large AHE that emerges at the interface between a ferromagnetic manganite (La 0.7 Sr 0.3 MnO 3 ) and a semimetallic iridate (SrIrO 3 ). It is intrinsic and originates in the proximity-induced magnetism present in the narrow bands of strong spin-orbit coupling material SrIrO 3 , which yields values of anomalous Hall conductivity and Hall angle as high as those observed in bulk transition-metal ferromagnets. These results demonstrate the interplay between correlated electron physics and topological phenomena at interfaces between 3d ferromagnets and strong spin-orbit coupling 5d oxides and trace an exciting path towards future topological spintronics at oxide interfaces.

36 MATERIALS SCIENCE↗