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At least 19 records

VUV Testing of Science Cameras at MSFC: QE Measurement of the CLASP Flight Cameras

The NASA Marshall Space Flight Center (MSFC) has developed a science camera suitable for sub-orbital missions for observations in the UV, EUV and soft X-ray. Six cameras were built and tested for the Chromospheric Lyman-Alpha Spectro-Polarimeter (CLASP), a joint National Astronomical Observatory of Japan (NAOJ) and MSFC sounding rocket mission. The CLASP camera design includes a frame-transfer e2v CCD57-10 512x512 detector, dual channel analog readout electronics and an internally mounted cold block. At the flight operating temperature of -20 C, the CLASP cameras achieved the low-noise performance requirements (less than or equal to 25 e- read noise and greater than or equal to 10 e-/sec/pix dark current), in addition to maintaining a stable gain of approximately equal to 2.0 e-/DN. The e2v CCD57-10 detectors were coated with Lumogen-E to improve quantum efficiency (QE) at the Lyman- wavelength. A vacuum ultra-violet (VUV) monochromator and a NIST calibrated photodiode were employed to measure the QE of each camera. Four flight-like cameras were tested in a high-vacuum chamber, which was configured to operate several tests intended to verify the QE, gain, read noise, dark current and residual non-linearity of the CCD. We present and discuss the QE measurements performed on the CLASP cameras. We also discuss the high-vacuum system outfitted for testing of UV and EUV science cameras at MSFC.

Champey, Patrick↗

VUV Testing of Science Cameras at MSFC: QE Measurement of the CLASP Flight Cameras

The NASA Marshall Space Flight Center (MSFC) has developed a science camera suitable for sub-orbital missions for observations in the UV, EUV and soft X-ray. Six cameras were built and tested for the Chromospheric Lyman-Alpha Spectro-Polarimeter (CLASP), a joint National Astronomical Observatory of Japan (NAOJ) and MSFC sounding rocket mission. The CLASP camera design includes a frame-transfer e2v CCD57-10 512x512 detector, dual channel analog readout electronics and an internally mounted cold block. At the flight operating temperature of -20 C, the CLASP cameras achieved the low-noise performance requirements (less than or equal to 25 e- read noise and greater than or equal to 10 e-/sec/pix dark current), in addition to maintaining a stable gain of approximately equal to 2.0 e-/DN. The e2v CCD57-10 detectors were coated with Lumogen-E to improve quantum efficiency (QE) at the Lyman- wavelength. A vacuum ultra-violet (VUV) monochromator and a NIST calibrated photodiode were employed to measure the QE of each camera. Four flight-like cameras were tested in a high-vacuum chamber, which was configured to operate several tests intended to verify the QE, gain, read noise, dark current and residual non-linearity of the CCD. We present and discuss the QE measurements performed on the CLASP cameras. We also discuss the high-vacuum system outfitted for testing of UV and EUV science cameras at MSFC.

Camera↗

The impact of dynamic data assimilation on the numerical simulations of the QE II cyclone and an analysis of the jet streak influencing the precyclogenetic environment

A mesoscale numerical model is combined with a dynamic data assimilation via Newtonian relaxation, or 'nudging', to provide initial conditions for subsequent simulations of the QE II cyclone. Both the nudging technique and the inclusion of supplementary data are shown to have a large positive impact on the simulation of the QE II cyclone during the initial phase of rapid cyclone development. Within the initial development period (from 1200 to 1800 UTC 9 September 1978), the dynamic assimilation of operational and bogus data yields a coherent two-layer divergence pattern that is not well defined in the model run using only the operational data and static initialization. Diagnostic analysis based on the simulations show that the initial development of the QE II storm between 0000 UTC 9 September and 0000 UTC 10 September was embedded within an indirect circulation of an intense 300-hPa jet streak, was related to baroclinic processes extending throughout a deep portion of the troposphere, and was associated with a classic two-layer mass-divergence profile expected for an extratropical cyclone.

Manobianco, John↗

The possible influence of upstream upper-level baroclinic processes on the development of the QE II storm

An analysis of the QE II storm of September 9-11, 1978 presents evidence for the existence of upper-level baroclinic processes upstream of the rapidly developing cyclone. The analysis shows that a deepening shortwave trough was located 400 to 500 km upstream of the site of the storm 12 h prior to rapid cyclogenesis. The trough was associated with: (1) a polar jet marked by 65 m/s winds in its core and significant vertical and horizontal wind shear, (2) positive vorticity advection and divergence at the 300 mb level, and (3) an intense frontal zone that extended from 300 mb down to the surface. It also appears that a tropopause fold likely extruded stratospheric air down to the 700-800 mb level, 400-500 km upstream of the surface low and 12 h prior to the explosive development phase of the cyclone. These findings raise questions about Gyakum's (1983) assertion that the QE II storm developed in an area in which the baroclinic support was confined to the lower troposphere and the related assertion by Anthes et al. (1983) that upper-level forcing upstream of the area of rapid cyclogenesis was weak and apparently not important in this case.

Uccellini, L. W.↗

Analysis of the impact of Seasat scatterometer data and horizontal resolution on GLA model simulations of the QE II storm

The impact of the Seasat-A satellite scatterometer wind data and the increased horizontal resolution on the Goddard Laboratory for Atmospheres model predictions of the Queen Elizabeth II (QE II) storm of 9-11 September 1978 was evaluated for four different GLA model simulations of the QE II storm. It is shown that the largest impact on the simulation was caused by doubling the model's horizontal resolution from 4 deg x 5 deg to 2 deg x 2.5 deg. The increased resolution resulted in a storm track which was much closer to the one observed, with a much deeper surface development, a stronger mass circulation, stronger heating, and stronger increase of angular momentum.

Lenzen, Allen J.↗

Delta-Doped High Purity Silicon UV-NIR CCDs with High QE and Low Dark Current

Delta doping process was developed on p-channel CCDs for MIDEX-Orion and JDEM/SNAP and was applied to large format (2k x4k) CCDs. Delta doping is applied to fully-fabricated CCDs (complete with Al metallization). High QE and low dark current is demonstrated with delta doped p-channel CCDs. In-house AR coating is demonstrated. Advantages include: Delta doping enables high QE and stability across the entire spectral range attainable with silicon. Delta doping is a low temperature process and is compatible with fully-fabricated detector arrays. Same base device for Orion two channels. High radiation tolerance and no thinning requirements of high purity p-channel. CCDs are additional advantages.

Orion↗

Characterization and Absolute QE Measurements of Delta-Doped N-Channel and P-Channel CCDs

In this paper we present the methodology for making absolute quantum efficiency (QE) measurements from the vacuum ultraviolet (VUV) through the near infrared (NIR) on delta-doped silicon CCDs. Delta-doped detectors provide an excellent platform to validate measurements through the VUV due to their enhanced UV response. The requirements for measuring QE through the VUV are more strenuous than measurements in the near UV and necessitate, among other things, the use of a vacuum monochromator, and good camera vacuum to prevent chip condensation, and more stringent handling requirements. The system used for these measurements was originally designed for deep UV characterization of CCDs for the WF/PC instrument on Hubble and later for Cassini CCDs.

Jacquot, Blake C.↗

A technique for determining Urbach edge, midgap states and electric field in a-Si:H and a-(Si,Ge):H devices

A technique for measuring the Urbach energy of valence band tail states and midgap defect densities in a-Si:H and a-(Si,Ge):H devices is described. The Urbach energy is determined by measuring the quantum efficiency (QE) of delocalized holes in the devices, whereas the midgap state density (DOS) is estimated by measuring the QE of localized holes. The distinction between delocalized and localized holes is obtained from the behavior of the QE upon the application of reverse bias to the device. The QE of holes localized in midgap states increases significantly upon the application of reverse bias because of Frenkel-Poole tunneling, whereas the QE of holes in tail states does not show such an increase. It is shown that upon light soaking the Urbach edge does not change, but the midgap DOS does increase significantly. A primary consequence of the increase in DOS is a decrease in electric field in the low-field middle i region of the p-i-n cell. The decrease in electric field is experimentally estimated by fitting the increase in the reverse bias QE to Frenkel-Poole tunneling.

Dalal, Vikram L.↗

Quantum Entanglement Molecular Absorption Spectrum Simulator

Quantum Entanglement Molecular Absorption Spectrum Simulator (QE-MASS) is a computer program for simulating two photon molecular-absorption spectroscopy using quantum-entangled photons. More specifically, QE-MASS simulates the molecular absorption of two quantum-entangled photons generated by the spontaneous parametric down-conversion (SPDC) of a fixed-frequency photon from a laser. The two-photon absorption process is modeled via a combination of rovibrational and electronic single-photon transitions, using a wave-function formalism. A two-photon absorption cross section as a function of the entanglement delay time between the two photons is computed, then subjected to a fast Fourier transform to produce an energy spectrum. The program then detects peaks in the Fourier spectrum and displays the energy levels of very short-lived intermediate quantum states (or virtual states) of the molecule. Such virtual states were only previously accessible using ultra-fast (femtosecond) laser systems. However, with the use of a single-frequency continuous wave laser to produce SPDC photons, and QEMASS program, these short-lived molecular states can now be studied using much simpler laser systems. QE-MASS can also show the dependence of the Fourier spectrum on the tuning range of the entanglement time of any externally introduced optical-path delay time. QE-MASS can be extended to any molecule for which an appropriate spectroscopic database is available. It is a means of performing an a priori parametric analysis of entangled photon spectroscopy for development and implementation of emerging quantum-spectroscopic sensing techniques. QE-MASS is currently implemented using the Mathcad software package.

Nguyen, Quang-Viet↗

Quantum efficiency of opaque CsI photocathodes with channel electron multiplier arrays in the extreme and far ultraviolet

The arrays are overcoated with a CsI photocathode in the VUV. The measurements are part of the development program for the Extreme Ultraviolet Explorer. Monochromatic light from a hollow cathode discharge source passing through a McPherson grazing incidence monochromator is used to illuminate the CsI photocathode. The beam diameter is kept small (approximately 2 mm) to confine it within the individual thickness strips. A bias grid is used to produce a 50-V/mm electric field to guarantee collection of all photoelectrons emitted by the CEMA (channel electron multiplier array) webbing. The CEMAs are operated with a gain of 2-3 x 10 to the 6th and are moderately saturated. A channeltron secondary transfer standard is used to determine the absolute QE in the EUV, whereas an NBS calibrated windowed photodiode is used to measure the FUV absolute QE. It is noted that the CsI gives a factor of 3 increase in the QE in the EUV and a factor of 50-5000 in the FUV.

Martin, C.↗

Novel Si(1-x)Ge(x)/Si heterojunction internal photoemission long wavelength infrared detectors

There is a major need for long-wavelength-infrared (LWIR) detector arrays in the range of 8 to 16 microns which operate with close-cycle cryocoolers above 65 K. In addition, it would be very attractive to have Si-based infrared (IR) detectors that can be easily integrated with Si readout circuitry and have good pixel-to-pixel uniformity, which is critical for focal plane array (FPA) applications. Here, researchers report a novel Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) detector approach with a tailorable long wavelength infrared cutoff wavelength, based on internal photoemission over the Si(1-x)Ge(x)/Si heterojunction. The HIP detectors were grown by molecular beam epitaxy (MBE), which allows one to optimize the device structure with precise control of doping profiles, layer thickness and composition. The feasibility of a novel Si(1-x)Ge(x)/Si HIP detector has been demonstrated with tailorable cutoff wavelength in the LWIR region. Photoresponse at wavelengths 2 to 10 microns are obtained with quantum efficiency (QE) above approx. 1 percent in these non-optimized device structures. It should be possible to significantly improve the QE of the HIP detectors by optimizing the thickness, composition, and doping concentration of the Si(1-x)Ge(x) layers and by configuring the detector for maximum absorption such as the use of a cavity structure. With optimization of the QE and by matching the barrier energy to the desired wavelength cutoff to minimize the thermionic current, researchers predict near background limited performance in the LWIR region with operating temperatures above 65K. Finally, with mature Si processing, the relatively simple device structure offers potential for low-cost producible arrays with excellent uniformity.

Lin, T. L.↗

Quantum efficiency measurements of Tektronix backside thinned CCDs

Results are presented of a program in progress to produce CCDs with high stable quantum efficiency (QE). Measurements made at 253.7 nm over a six-month period showed no significant QE difference between two CCDs manufactured in 1989 and one manufactured in 1988. QE improvement by the addition of a two-layer antireflection coating is about threefold at 400 nm.

Delamere, Alan↗

Evaluation of high quantum efficiency silicon photodiodes for calibration in the 400 nm to 900 nm spectral region

The reflectance and internal quantum efficiency (QE) of three single-element photodiodes are determined using two different light-trapping devices. The QED-200 light trapping device which is based on inversion layer photodiodes exhibits the best performance within the short wavelengths of the visible spectrum (VIS), while the A-O device based on p-n photodiodes, performs best in the long wave VIS up to 950 nm. The combination of the two light-traps provides nearly 100 percent external QE coverage from 400 to 950 nm. The reflectances and internal QE were determined within this spectral range for three photodiodes: UV100, an inversion layer photodiode; X-UV100, a shallow diffused n-p photodiode; and 10DPI/SB, a blue-enhanced p-n photodiode.

Jorquera, Carlos↗

SiC-based Photo-detectors for UV, VUV, EUV and Soft X-ray Detection

A viewgraph presentation describing an ideal Silicon Carbide detector for ultraviolet, vacuum ultraviolet, extreme ultraviolet and soft x-ray detection is shown. The topics include: 1) An ideal photo-detector; 2) Dark current density of SiC photodiodes at room temperature; 3) Dark current in SiC detectors; 4) Resistive and capacitive feedback trans-impedance amplifier; 5) Avalanche gain; 6) Excess noise; 7) SNR in single photon counting mode; 8) Structure of SiC single photon counting APD and testing structure; 9) Single photon counting waveform and testing circuit; 10) Amplitude of SiC single photon counter; 11) Dark count of SiC APD photon counters; 12) Temperature-dependence of dark count rate; 13) Reduce the dark count rate by reducing the breakdown electric field; 14) Spectrum range for SiC detectors; 15) QE curves of Pt/4H-SiC photodiodes; 16) QE curve of SiC; 17) QE curves of SiC photodiode vs. penetration depth; 18) Visible rejection of SiC photodiodes; 19) Advantages of SiC photodiodes; 20) Competitors of SiC detectors; 21) Extraterrestrial solar spectra; 22) Visible-blind EUV detection; 23) Terrestrial solar spectra; and 24) Less than 1KeV soft x-ray detection.

Yan, Feng↗

OP09O-OP404-9 Wide Field Camera 3 CCD Quantum Efficiency Hysteresis

The HST/Wide Field Camera (WFC) 3 UV/visible channel CCD detectors have exhibited an unanticipated quantum efficiency hysteresis (QEH) behavior. At the nominal operating temperature of -83C, the QEH feature contrast was typically 0.1-0.2% or less. The behavior was replicated using flight spare detectors. A visible light flat-field (540nm) with a several times full-well signal level can pin the detectors at both optical (600nm) and near-UV (230nm) wavelengths, suppressing the QEH behavior. We are characterizing the timescale for the detectors to become unpinned and developing a protocol for flashing the WFC3 CCDs with the instrument's internal calibration system in flight. The HST/Wide Field Camera 3 UV/visible channel CCD detectors have exhibited an unanticipated quantum efficiency hysteresis (QEH) behavior. The first observed manifestation of QEH was the presence in a small percentage of flat-field images of a bowtie-shaped contrast that spanned the width of each chip. At the nominal operating temperature of -83C, the contrast observed for this feature was typically 0.1-0.2% or less, though at warmer temperatures contrasts up to 5% (at -50C) have been observed. The bowtie morphology was replicated using flight spare detectors in tests at the GSFC Detector Characterization Laboratory by power cycling the detector while cold. Continued investigation revealed that a clearly-related global QE suppression at the approximately 5% level can be produced by cooling the detector in the dark; subsequent flat-field exposures at a constant illumination show asymptotically increasing response. This QE "pinning" can be achieved with a single high signal flat-field or a series of lower signal flats; a visible light (500-580nm) flat-field with a signal level of several hundred thousand electrons per pixel is sufficient for QE pinning at both optical (600nm) and near-UV (230nm) wavelengths. We are characterizing the timescale for the detectors to become unpinned and developing a protocol for flashing the WFC3 CCDs with the instrument's internal calibration system in flight. A preliminary estimate of the decay timescale for one detector is that a drop of 0.1-0.2% occurs over a ten day period, indicating that relatively infrequent cal lamp exposures can mitigate the behavior to extremely low levels.

Collins, Nick↗

Multiplexed 256 element InGaAs detector arrays for 0.8-1.7-micron room-temperature operation

InGaAs photodetectors have been configured into linear arrays of 30 x 30 micron photodetectors spaced 50 microns apart. The devices have typical responsivities of 0.9 A/W (86-percent QE) at 1.3 microns and exhibit room temperature dark currents below 100 pA. A 256-element array has been mounted in a Reticon multiplexer and configured into a PAR optical multichannel analyzer to extend spectral response out to 1.7 microns. Individual InGaAs detectors have been fabricated for response out to 2.2 microns with dark current below 1 microA (-1V) and 50-percent QE at room temperature.

Olsen, G. H.↗