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Results for “RUTHERFORD BACKSCATTERING SPECTROSCOPY”

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At least 19 records

Characterization of gold nanoparticle films: Rutherford backscattering spectroscopy, scanning electron microscopy with image analysis, and atomic force microscopy

Gold nanoparticle films are of interest in several branches of science and technology, and accurate sample characterization is needed but technically demanding. We prepared such films by DC magnetron sputtering and recorded their mass thickness by Rutherford backscattering spectroscopy. The geometric thickness d{sub g}—from the substrate to the tops of the nanoparticles—was obtained by scanning electron microscopy (SEM) combined with image analysis as well as by atomic force microscopy (AFM). The various techniques yielded an internally consistent characterization of the films. In particular, very similar results for d{sub g} were obtained by SEM with image analysis and by AFM.

36 MATERIALS SCIENCE↗

Electrical and magnetic properties modification in heavy ion irradiated nanograin NixCo(3-x)O4 films

Reactively sputtered NixCo(3-x)O4 films (x = 1.5, 1.0, and 0.75) were grown and subsequently irradiated with 5.5 MeV Si+ ions to investigate effects of lattice-site and charge state distribution. Films were characterized before and after irradiation by x-ray diffraction, x-ray photoemission spectroscopy, Rutherford backscattering spectroscopy, electric resistivity measurements, and temperature-dependent AC and DC magnetometry. Results indicate that ion irradiation induces oxygen loss, partial reduction of nickel, and an increase in both low temperature ferrimagnetism and room temperature conductivity. Frequency dependent AC magnetic susceptibility measurements indicate a spin-glass like transition at low temperature which moves to higher temperature after irradiation. Significance of the charge transfer for magnetism and conduction in a mixed spinel with Co2+, Co3+, Ni2+, and Ni3+ in tetrahedral and octahedral sites is discussed.

Environmental Molecular Sciences Laboratory↗

Synthesis and annealing study of RF sputtered ZnO thin film

In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structure of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Characterization of bismuth nanospheres deposited by plasma focus device

A new method for producing thin layer of bismuth nanospheres based on the use of low energy plasma focus device is demonstrated. Various techniques such as scanning electron microscopy, Rutherford backscattering spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy have been used to characterize the morphology and the composition of the nanospheres. Experimental parameters may be adjusted to favour the formation of bismuth nanospheres instead of microspheres. Therefore, the formation of large surface of homogeneous layer of bismuth nanospheres with sizes of below 100 nm can be obtained. The natural snowball phenomenon is observed to be reproduced in nanoscale where spheres roll over the small nanospheres and grow up to bigger sizes that can reach micro dimensions. The comet-like structure, a reverse phenomenon to snowball is also observed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Control of silicon nanoparticle size embedded in silicon oxynitride dielectric matrix

In this study, silicon rich silicon oxynitride layers containing more than 15% nitrogen were deposited by electron cyclotron resonance assisted plasma enhanced vapor deposition in order to form silicon nanoparticles after a high temperature thermal annealing. The effect of the flows of the precursor gases on the composition and the structural properties of the layers was assessed by Rutherford backscattering spectroscopy, elastic recoil detection analysis, and infrared spectroscopic measurements. The morphological and crystallinity properties were investigated by energy filtered transmission electron microscopy and Raman spectroscopy. We show that the excess of silicon in the silicon oxynitride layer controls the silicon nanoparticles size. On the other hand, the crystalline fraction of particles is found to be strongly correlated to the nanoparticle size. Finally, the photoluminescence measurements show that it is also possible to tune the photoluminescence peak position between 400 and 800 nm and its intensity by changing the silicon excess in the silicon rich silicon oxynitride matrix.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Neutron-induced fission cross section of Np 237 in the keV to MeV range at the CERN n_TOF facility

We experimentally determined the neutron-induced fission cross section of Np-237 at the high-resolution and high-intensity facility n_TOF, at CERN, in the energy range 100 keV to 9 MeV, using the U-235(n, f) and U-238(n, f) cross section standards below and above 2 MeV, respectively. Moreover, a fast ionization chamber was used in order to detect the fission fragments from the reactions and the targets were characterized as far as their mass and homogeneity are concerned by means of a spectroscopy and Rutherford backscattering spectroscopy respectively. Finally, theoretical calculations within the Hauser-Feshbach formalism have been performed, employing the EMPIRE code, and the model parameters were tuned in order to successfully reproduce the experimental fission cross-sectional data and simultaneously all the competing reaction channels.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Amorphous silicon carbide coatings for extreme ultraviolet optics

Amorphous silicon carbide films formed by sputtering techniques are shown to have high reflectance in the extreme ultraviolet spectral region. X-ray scattering verifies that the atomic arrangements in these films are amorphous, while Auger electron spectroscopy and Rutherford backscattering spectroscopy show that the films have composition close to stoichiometric SiC, although slightly C-rich, with low impurity levels. Reflectance vs incidence angle measurements from 24 to 1216 A were used to derive optical constants of this material, which are presented here. Additionally, the measured extreme ultraviolet efficiency of a diffraction grating overcoated with sputtered amorphous silicon carbide is presented, demonstrating the feasibility of using these films as coatings for EUV optics.

Kortright, J. B.↗

Optical performance of exposed solar cell covers

The characterization results of samples flown on the Long Duration Exposure Facility (LDEF) are discussed. These samples included both coated and uncoated fused silica and ceria glass substrates used in the manufacture of solar cell covers. The coatings comprised a single-layer magnesium fluoride antireflection coating and an all-dielectric high-reflector multilayer coating centered at 350 nm. Samples were mounted on both the leading and trailing surfaces of the LDEF for exposure to the environment of space. The optical properties of the coatings will be compared to control samples which were stored on the ground during the LDEF Mission. Results of Auger Electron Spectroscopy and Rutherford Backscatter Spectroscopy measurements made on several of the coatings are presented to explain the effects of space on the chemical composition of the coatings.

Hichwa, Bryant P.↗

Optical performance of exposed solar cell covers

This paper discusses the characterization results of samples flown on the Long Duration Exposure Facility (LDEF). These samples included both coated and uncoated fused silica and ceria glass substrates used in the manufacture of solar cell covers. The coatings comprised a single-layer magnesium fluoride antireflection coating and an all-dielectric high-reflector multilayer coating centered at 350 nm. Samples were mounted on both the leading and trailing surfaces of the LDEF for exposure to the environment of space. The optical properties of the coatings will be compared to control samples which were stored on the ground during the LDEF Mission. Results of Auger Electron Spectroscopy and Rutherford Backscatter Spectroscopy measurements made on several of the coatings will be presented to explain the effects of space on the chemical composition of the coatings.

Thomas H Allen↗

Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containing ∼25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions.

36 MATERIALS SCIENCE↗

Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon

Experimental depth distributions of the concentration of implanted xenon ions depending on their charge state and irradiation energy are presented. Xenon ions in charge states q = 1–20 and energies in the range from 50 to 400 keV are incorporated into single-crystal silicon. Irradiation is performed in the direction not coinciding with the crystallographic axes of the crystal to avoid the channeling effect. The ion fluence varies in the range of 5 × (10{sup 14}–10{sup 15}) ion/cm{sup 2}. The irradiation by singly charged ions and investigation of the samples by Rutherford backscattering spectroscopy is performed using an HVEE acceleration complex at Moscow State University. Multiply charged ions are implanted using a FAMA acceleration complex at the Vinća Institute of Nuclear Sciences. The depth distribution profiles of the incorporated ions are found using Rutherford backscattering spectroscopy. Experimental results are correlated with computer calculations. It is shown that the average projective path of multiply charged ions in most cases is shorter when compared with the average projected path of singly charged ions and the results of computer modeling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Surface Diagnostics in Tribology Technology and Advanced Coatings Development

This paper discusses the methodologies used for surface property measurement of thin films and coatings, lubricants, and materials in the field of tribology. Surface diagnostic techniques include scanning electron microscopy, transmission electron microscopy, atomic force microscopy, stylus profilometry, x-ray diffraction, electron diffraction, Raman spectroscopy, Rutherford backscattering, elastic recoil spectroscopy, and tribology examination. Each diagnostic technique provides specific measurement results in its own unique way. In due course it should be possible to coordinate the different pieces of information provided by these diagnostic techniques into a coherent self-consistent description of the surface properties. Examples are given on the nature and character of thin diamond films.

Miyoshi, Kazuhisa↗

Measurements and Diagnostics of Diamond Films and Coatings

The commercial potential of chemical-vapor-deposited (CVD) diamond films has been established and a number of applications have been identified through university, industry, and government research studies. This paper discusses the methodologies used for property measurement and diagnostic of CVD diamond films and coatings. Measurement and diagnostic techniques studied include scanning electron microscopy, transmission electron microscopy, atomic force microscopy, stylus profilometry, x-ray diffraction, electron diffraction, Raman spectroscopy, Rutherford backscattering, elastic recoil spectroscopy, and friction examination. Each measurement and diagnostic technique provides unique information. A combination of techniques can provide the technical information required to understand the quality and properties of CVD diamond films, which are important to their application in specific component systems and environments. In this study the combination of measurement and diagnostic techniques was successfully applied to correlate deposition parameters and resultant diamond film composition, crystallinity, grain size, surface roughness, and coefficient of friction.

Miyoshi, Kazuhisa↗

XAFS Spectroscopy Study of Microstructure and Electronic Structure of Heterosystems Containing Si/GeMn Quantum Dots

Using X-ray absorption near edge structure spectroscopy, extended X-ray absorption fine structure spectroscopy, atomic force microscopy, and Rutherford backscattering spectroscopy, the features of the microstructure and elemental composition of Si/GeMn magnetic systems obtained by molecular beam epitaxy and containing quantum dots are studied. Intense mixing of Ge and Si atoms is found in all samples. The degree of mixing (diffusion) correlates with the conditions of synthesis of Si/GeMn samples. For these systems, direct contacts of germanium atoms with manganese atoms are characterized and the presence of interstitial manganese with tetrahedral coordination and substitution of manganese for germanium and silicon in the lattice sites is found. The presence of stoichiometric phases Ge{sub 8}Mn{sub 11}, Ge{sub 3}Mn{sub 5} is not detected. The correlations of the Ge, Si, and Mn coordination numbers in the Ge environment are determined both with the Mn flux value (evaporator temperature) and with the temperature at which quantum dots are grown, as well as with other synthesis conditions. The manganese concentration in the samples is determined.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy

Requisite to growing stoichiometric perovskite thin films of the solid-solution A ' 1-x A x B O 3 by hybrid molecular beam epitaxy is understanding how the growth conditions interpolate between the end members A'B O 3 and AB O 3 , which can be grown in a self-regulated fashion, but under different conditions. Using the example of La 1-x Sr x VO 3 , the two-dimensional growth parameter space that is spanned by the flux of the metal-organic precursor vanadium oxytriisopropoxide and composition, x , was mapped out. The evolution of the adsorption-controlled growth window was obtained using a combination of X-ray diffraction, atomic force microscopy, reflection high-energy electron-diffraction (RHEED), and Rutherford backscattering spectroscopy. It is found that the stoichiometric growth conditions can be mapped out quickly with a single calibration sample using RHEED. Once stoichiometric conditions have been identified, the out-of-plane lattice parameter can be utilized to precisely determine the composition x . This strategy enables the identification of growth conditions that allow the deposition of stoichiometric perovskite oxide films with random A-site cation mixing, which is relevant to a large number of perovskite materials with interesting properties, e.g., high-temperature superconductivity and colossal magnetoresistance, that emerge in solid solution A ' 1-x A x B O 3 .

36 MATERIALS SCIENCE↗

Synthesis, Structure, and Spectroscopy of Epitaxial EuFeO 3 Thin Films

Rare earth iron perovskites RFeO3, where R is a rare earth cation, exhibit an array of magnetic, catalytic, optical, and electrochemical properties. Here we study EuFeO3 films synthesized by molecular beam epitaxy to improve our understanding of the optical properties of ferrites. A combination of X-ray diffraction, X-ray reflectivity, Rutherford backscattering spectroscopy, and scanning transmission electron microscopy was used to characterize the film structure and cation composition. X-ray absorption spectroscopy confirms the nominal 3+ valence states of Eu and Fe. The optical properties of EuFeO3 were investigated using variable-angle spectroscopic ellipsometry between the photon energies of 1.25 and 5 eV. We find that EuFeO3 is a semiconductor with an onset of optical absorption near 2.5 eV. The absorption spectrum of EuFeO3 is blue-shifted with respect to LaFeO3 films, a result that is attributed to the structural differences between the two materials.

Choquette, Amber K.↗

Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing

The integration of III–V compound semiconductors in Si is a crucial step towards faster and smaller devices in future technologies. In this work, we investigate the formation process of III–V compound semiconductor nanocrystals, namely, GaAs, GaSb, and InP, by ion implantation and sub-second flash lamp annealing in a SiO{sub 2}/Si/SiO{sub 2} layer stack on Si grown by plasma-enhanced chemical vapor deposition. Raman spectroscopy, Rutherford Backscattering spectrometry, and transmission electron microscopy were performed to identify the structural and optical properties of these structures. Raman spectra of the nanocomposites show typical phonon modes of the compound semiconductors. The formation process of the III–V compounds is found to be based on liquid phase epitaxy, and the model is extended to the case of an amorphous matrix without an epitaxial template from a Si substrate. It is shown that the particular segregation and diffusion coefficients of the implanted group-III and group-V ions in molten Si significantly determine the final appearance of the nanostructure and thus their suitability for potential applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Spacecraft thermal control coatings

The Experiment AO 138-6 was located on the trailing edge of the Long Duration Exposure Facility as part of the French Cooperative Payload (FRECOPA) Experiment. It was purely passive in nature: material specimens 2 x 2 cm, independently mounted in sample-holders, with their surface in the same reference plane, were exposed to space. Thirty samples were set in a vacuum-tight canister which was opened in space a few days after LDEF deployment and closed while still in orbit ten months later; twenty-four samples were directly exposed to space for the total flight duration (preflight handling, shuttle bay environment, separation from shuttle, shuttle environment, LEO environment, docking, descent, transfer to KSC). Materials included paints (conductive or nonconductive), SSM's, polymeric films, surface coatings, composite materials, and metals. After sample retrieving, inspection and measurements were carried out in atmospheric laboratory conditions on each sample: observation with binocular lenses and scanning electron microscopy, spectral relectance and transmittance using an integrating sphere in the wavelength range 280-2300 nm, emissivity by the means of a Gier & Dunkle portable reflectometer, electron spectroscopy for chemical analysis-x-ray photoelectron spectroscopy (ESCA-XPS), and Rutherford backscattering spectroscopy (RBS) measurements on some selected samples. The results obtained from flight were compared to laboratory data obtained in UV-irradiation tests when these data were available. As a general statement a good spectral concordance is observed for all samples not in the canister so long as air recoveries are taken into account. For one material, the degradation is more important for the sample in the canister than for those of the same material mounted at the surface of the tray; for most samples in the canister the degradation is slightly higher than the one which can be predicted from laboratory standard irradiations. Contamination problems having been ruled out, the higher temperature experience by the samples on the inside of canister probably explains these phenomena.

Guillaumon, Jean-Claude↗