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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

In-pixel AI for lossy data compression at source for X-ray detectors

Integrating neural networks for data compression directly in the Read-Out Integrated Circuits (ROICs), i.e. the pixelated front-end, would result in a significant reduction in off-chip data transfer, overcoming the I/O bottleneck. Our ROIC test chip (AI-In-Pixel-65) is designed in a 65 nm Low Power CMOS process for the readout of pixelated X-ray detectors. Each pixel consists of an analog front-end for signal processing and a 10b analog-to-digital converter operating at 100KSPS. Here, we compare two non-reconfigurable techniques, Principal Component Analysis (PCA) and an AutoEncoder (AE) as lossy data compression engines implemented within the pixelated area. The PCA algorithm achieves 50$×$ compression, adds one clock cycle latency, and results in a 21% increase in the pixel area. The AE achieves 70$×$ compression, adds 30 clock cycle latency, and results in a similar area increase.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

A Cryogenic readout integrated circuit with analog pile-up and in-Pixel ADC for high frame rate Skipper CCD-in-CMOS Sensors

The Skipper CCD-in-CMOS Parallel Read-Out Circuit V2 (SPROCKET2) is designed to enable high frame rate readout of Skipper CCD-in-CMOS image sensors. The SPROCKET2 pixel is fabricated in a 65 nm CMOS process and occupies a 60$\mu$m $\times$ 60$\mu$m footprint. SPROCKET2 is intended to be heterogeneously integrated with a pixelated Skipper CCD-in-CMOS sensor, such that one readout pixel is connected to a multiplexed array of 16 active image sensor pixels, to match their spatial geometry. Our design benefits from the Skipper CCD-in-CMOS sensor's non-destructive readout capability to achieve exceptionally low noise through multi-sampling and averaging while optimizing for total power consumption. The pixel readout utilizes correlated double sampling to minimize 1/f noise and includes "pile-up" of ten successive samples in the analog domain before digitizing at a rate of 66.7 ksps. Measurement results of in-pixel serial SAR ADC show DNL and INL of ~0. 44 LSB and 0.58 LBS respectively. A large area array of 20,000 SPROCKET2 ADC pixels (multiplexed 1:16 to 320,000 sensor pixels) is currently under test. By reading out data over a 10 Gbps optical link, this pixel design enables a frame rate of $\sim$ 4 kfps for large sensing areas with minimal sensing deadtime. In the highest gain mode, the pixelated ADC has an input-referred resolution of 10$\mu$V with a simulated power consumption of 50$\mu$W. The pixel operates with constant current draw to minimize power-rail crosstalk.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

A Cryogenic Readout IC with 100 KSPS in-Pixel ADC for Skipper CCD-in-CMOS Sensors

The Skipper CCD-in-CMOS Parallel Read-Out Circuit (SPROCKET) is a mixed-signal front-end design for the readout of Skipper CCD-in-CMOS image sensors. SPROCKET is fabricated in a 65 nm CMOS process and each pixel occupies a 50$\mu$m $\times$ 50$\mu$m footprint. SPROCKET is intended to be heterogeneously integrated with a Skipper-in-CMOS sensor array, such that one readout pixel is connected to a multiplexed array of nine Skipper-in-CMOS pixels to enable massively parallel readout. The front-end includes a variable gain preamplifier, a correlated double sampling circuit, and a 10-bit serial successive approximation register (SAR) ADC. The circuit achieves a sample rate of 100 ksps with 0.48 $\mathrm{e^-_{rms}}$ equivalent noise at the input to the ADC. SPROCKET achieves a maximum dynamic range of 9,000 $e^-$ at the lowest gain setting (or 900 $e^-$ at the lowest noise setting). The circuit operates at 100 Kelvin with a power consumption of 40 $\mu W$ per pixel. A SPROCKET test chip was submitted in September 2022, and test results will be presented at the conference.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Overhaul and installation of the ICARUS-T600 liquid argon TPC electronics for the FNAL Short Baseline Neutrino program

The ICARUS T600 liquid argon (LAr) time projection chamber (TPC) underwent a major overhaul at CERN in 2016–2017 to prepare for the operation at FNAL in the Short Baseline Neutrino (SBN) program. This included a major upgrade of the photo-multiplier system and of the TPC wire read-out electronics. The full TPC wire read-out electronics together with the new wire biasing and interconnection scheme are described. The design of a new signal feed-through flange is also a fundamental piece of this overhaul whose major feature is the integration of all electronics components onto the signal flange. Initial functionality tests of the full TPC electronics chain installed in the T600 detector at FNAL are also described.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

A scalable superconducting nanowire memory array with row–column addressing

Scalable superconducting memory is required for the development of low-energy superconducting computers and fault-tolerant quantum computers. Conventional superconducting logic-based memory cells possess a large footprint that limits scaling; nanowire-based superconducting memory cells, although more compact, have high error rates, which hinders integration into large arrays. Here we report a 4 × 4 superconducting nanowire memory array that is designed for scalable row–column operations and has a functional density of 2.6 Mbit cm −2 . Each memory cell is based on a nanowire loop consisting of two temperature-dependent superconducting switches and a variable kinetic inductor. The arrays operate at 1.3 K, where we implement and characterize multiflux quanta state storage and destructive read-out. By optimizing the write- and read-pulse sequences, we minimize bit errors and maximize operating margins. We achieve a minimum bit error rate of 10 −5 . Here, we also use circuit-level simulations to understand the memory cell’s dynamics, performance limits and stability under varying pulse amplitudes.

Electrical and electronic engineering↗