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Results for “Rutherford backscattering spectroscopy”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Study of asymmetries of Cd(Zn)Te devices investigated using photo-induced current transient spectroscopy, Rutherford backscattering, surface photo-voltage spectroscopy, and gamma ray spectroscopies

Despite these recent advancements in preparing the surface of Cd(Zn)Te devices for detector applications, large asymmetries in the electronic properties of planar Cd(Zn)Te detectors are common. Furthermore, for the development of patterned electrode geometries, selection of each electrode surface is crucial for minimizing dark current in the device. This investigation presented here has been carried out with three objectives. Each objective is oriented towards establishing reliable methods for the selection of the anode and cathode surfaces independent of the crystallographic orientation. The objectives of this study are (i) investigate how the asymmetry in I-V characteristics of Cd(Zn)Te devices may be associated with the TeO2 interfacial layer using Rutherford backscattering to study the structure at the Au-Cd(Zn)Te interface, (ii) develop an understanding of how the concentration of the active traps in Cd(Zn)Te varies with the external bias, and (iii) propose non-destructive methods for selection of the anode and cathode which are independent of crystallographic orientation. The spectroscopic methods employed in this investigation include Rutherford backscattering spectroscopy, photo-induced current transient spectroscopy, and surface photo-voltage spectroscopy, as well as gamma ray spectroscopy to demonstrate the influence on detector properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Improvement of sensitivity in high-resolution Rutherford backscattering spectroscopy

The sensitivity (limit of detection) of high-resolution Rutherford backscattering spectroscopy (HRBS) is mainly determined by the background noise of the spectrometer. There are two major origins of the background noise in HRBS, one is the stray ions scattered from the inner wall of the vacuum chamber of the spectrometer and the other is the dark noise of the microchannel plate (MCP) detector which is commonly used as a focal plane detector of the spectrometer in HRBS. In order to reject the stray ions, several barriers are installed inside the spectrometer and a thin Mylar foil is mounted in front of the detector. The dark noise of the MCP detector is rejected by the coincidence measurement with the secondary electrons emitted from the Mylar foil upon the ion passage. After these improvements, the background noise is reduced by a factor of 200 at a maximum. The detection limit can be improved down to 10 ppm for As in Si at a measurement time of 1 h under ideal conditions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Characterization of gold nanoparticle films: Rutherford backscattering spectroscopy, scanning electron microscopy with image analysis, and atomic force microscopy

Gold nanoparticle films are of interest in several branches of science and technology, and accurate sample characterization is needed but technically demanding. We prepared such films by DC magnetron sputtering and recorded their mass thickness by Rutherford backscattering spectroscopy. The geometric thickness d{sub g}—from the substrate to the tops of the nanoparticles—was obtained by scanning electron microscopy (SEM) combined with image analysis as well as by atomic force microscopy (AFM). The various techniques yielded an internally consistent characterization of the films. In particular, very similar results for d{sub g} were obtained by SEM with image analysis and by AFM.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Electrical and magnetic properties modification in heavy ion irradiated nanograin NixCo(3-x)O4 films

Reactively sputtered NixCo(3-x)O4 films (x = 1.5, 1.0, and 0.75) were grown and subsequently irradiated with 5.5 MeV Si+ ions to investigate effects of lattice-site and charge state distribution. Films were characterized before and after irradiation by x-ray diffraction, x-ray photoemission spectroscopy, Rutherford backscattering spectroscopy, electric resistivity measurements, and temperature-dependent AC and DC magnetometry. Results indicate that ion irradiation induces oxygen loss, partial reduction of nickel, and an increase in both low temperature ferrimagnetism and room temperature conductivity. Frequency dependent AC magnetic susceptibility measurements indicate a spin-glass like transition at low temperature which moves to higher temperature after irradiation. Significance of the charge transfer for magnetism and conduction in a mixed spinel with Co2+, Co3+, Ni2+, and Ni3+ in tetrahedral and octahedral sites is discussed.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2016

Synthesis and annealing study of RF sputtered ZnO thin film

In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structure of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Characterization of bismuth nanospheres deposited by plasma focus device

A new method for producing thin layer of bismuth nanospheres based on the use of low energy plasma focus device is demonstrated. Various techniques such as scanning electron microscopy, Rutherford backscattering spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy have been used to characterize the morphology and the composition of the nanospheres. Experimental parameters may be adjusted to favour the formation of bismuth nanospheres instead of microspheres. Therefore, the formation of large surface of homogeneous layer of bismuth nanospheres with sizes of below 100 nm can be obtained. The natural snowball phenomenon is observed to be reproduced in nanoscale where spheres roll over the small nanospheres and grow up to bigger sizes that can reach micro dimensions. The comet-like structure, a reverse phenomenon to snowball is also observed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Control of silicon nanoparticle size embedded in silicon oxynitride dielectric matrix

In this study, silicon rich silicon oxynitride layers containing more than 15% nitrogen were deposited by electron cyclotron resonance assisted plasma enhanced vapor deposition in order to form silicon nanoparticles after a high temperature thermal annealing. The effect of the flows of the precursor gases on the composition and the structural properties of the layers was assessed by Rutherford backscattering spectroscopy, elastic recoil detection analysis, and infrared spectroscopic measurements. The morphological and crystallinity properties were investigated by energy filtered transmission electron microscopy and Raman spectroscopy. We show that the excess of silicon in the silicon oxynitride layer controls the silicon nanoparticles size. On the other hand, the crystalline fraction of particles is found to be strongly correlated to the nanoparticle size. Finally, the photoluminescence measurements show that it is also possible to tune the photoluminescence peak position between 400 and 800 nm and its intensity by changing the silicon excess in the silicon rich silicon oxynitride matrix.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Neutron-induced fission cross section of Np 237 in the keV to MeV range at the CERN n_TOF facility

We experimentally determined the neutron-induced fission cross section of Np-237 at the high-resolution and high-intensity facility n_TOF, at CERN, in the energy range 100 keV to 9 MeV, using the U-235(n, f) and U-238(n, f) cross section standards below and above 2 MeV, respectively. Moreover, a fast ionization chamber was used in order to detect the fission fragments from the reactions and the targets were characterized as far as their mass and homogeneity are concerned by means of a spectroscopy and Rutherford backscattering spectroscopy respectively. Finally, theoretical calculations within the Hauser-Feshbach formalism have been performed, employing the EMPIRE code, and the model parameters were tuned in order to successfully reproduce the experimental fission cross-sectional data and simultaneously all the competing reaction channels.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1988

Amorphous silicon carbide coatings for extreme ultraviolet optics

Amorphous silicon carbide films formed by sputtering techniques are shown to have high reflectance in the extreme ultraviolet spectral region. X-ray scattering verifies that the atomic arrangements in these films are amorphous, while Auger electron spectroscopy and Rutherford backscattering spectroscopy show that the films have composition close to stoichiometric SiC, although slightly C-rich, with low impurity levels. Reflectance vs incidence angle measurements from 24 to 1216 A were used to derive optical constants of this material, which are presented here. Additionally, the measured extreme ultraviolet efficiency of a diffraction grating overcoated with sputtered amorphous silicon carbide is presented, demonstrating the feasibility of using these films as coatings for EUV optics.

Kortright, J. B.↗
NASA NTRS1991

Optical performance of exposed solar cell covers

The characterization results of samples flown on the Long Duration Exposure Facility (LDEF) are discussed. These samples included both coated and uncoated fused silica and ceria glass substrates used in the manufacture of solar cell covers. The coatings comprised a single-layer magnesium fluoride antireflection coating and an all-dielectric high-reflector multilayer coating centered at 350 nm. Samples were mounted on both the leading and trailing surfaces of the LDEF for exposure to the environment of space. The optical properties of the coatings will be compared to control samples which were stored on the ground during the LDEF Mission. Results of Auger Electron Spectroscopy and Rutherford Backscatter Spectroscopy measurements made on several of the coatings are presented to explain the effects of space on the chemical composition of the coatings.

Hichwa, Bryant P.↗
NASA NTRS1992

Optical performance of exposed solar cell covers

This paper discusses the characterization results of samples flown on the Long Duration Exposure Facility (LDEF). These samples included both coated and uncoated fused silica and ceria glass substrates used in the manufacture of solar cell covers. The coatings comprised a single-layer magnesium fluoride antireflection coating and an all-dielectric high-reflector multilayer coating centered at 350 nm. Samples were mounted on both the leading and trailing surfaces of the LDEF for exposure to the environment of space. The optical properties of the coatings will be compared to control samples which were stored on the ground during the LDEF Mission. Results of Auger Electron Spectroscopy and Rutherford Backscatter Spectroscopy measurements made on several of the coatings will be presented to explain the effects of space on the chemical composition of the coatings.

Thomas H Allen↗
DOE OSTI2016

Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containing ∼25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium

The redistribution of implanted Rb and Cs profiles in amorphous silicon during solid-phase epitaxial recrystallization has been investigated by Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. For the implantation dose used in these experiments, the alkali atoms segregate at the a-Si/c-Si interface during annealing resulting in concentration peaks near the interface. In this way, the alkali atoms are moved towards the surface. Rutherford backscattering spectroscopy in ion channeling configuration was performed to measure average recrystallization rates of the amorphous silicon layers. Preliminary studies on the influence of the alkali atoms on the solid-phase epitaxial regrowth rate reveal a strong retardation compared to the intrinsic recrystallization rate.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon

Experimental depth distributions of the concentration of implanted xenon ions depending on their charge state and irradiation energy are presented. Xenon ions in charge states q = 1–20 and energies in the range from 50 to 400 keV are incorporated into single-crystal silicon. Irradiation is performed in the direction not coinciding with the crystallographic axes of the crystal to avoid the channeling effect. The ion fluence varies in the range of 5 × (10{sup 14}–10{sup 15}) ion/cm{sup 2}. The irradiation by singly charged ions and investigation of the samples by Rutherford backscattering spectroscopy is performed using an HVEE acceleration complex at Moscow State University. Multiply charged ions are implanted using a FAMA acceleration complex at the Vinća Institute of Nuclear Sciences. The depth distribution profiles of the incorporated ions are found using Rutherford backscattering spectroscopy. Experimental results are correlated with computer calculations. It is shown that the average projective path of multiply charged ions in most cases is shorter when compared with the average projected path of singly charged ions and the results of computer modeling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1999

Surface Diagnostics in Tribology Technology and Advanced Coatings Development

This paper discusses the methodologies used for surface property measurement of thin films and coatings, lubricants, and materials in the field of tribology. Surface diagnostic techniques include scanning electron microscopy, transmission electron microscopy, atomic force microscopy, stylus profilometry, x-ray diffraction, electron diffraction, Raman spectroscopy, Rutherford backscattering, elastic recoil spectroscopy, and tribology examination. Each diagnostic technique provides specific measurement results in its own unique way. In due course it should be possible to coordinate the different pieces of information provided by these diagnostic techniques into a coherent self-consistent description of the surface properties. Examples are given on the nature and character of thin diamond films.

Miyoshi, Kazuhisa↗
NASA NTRS1999

Measurements and Diagnostics of Diamond Films and Coatings

The commercial potential of chemical-vapor-deposited (CVD) diamond films has been established and a number of applications have been identified through university, industry, and government research studies. This paper discusses the methodologies used for property measurement and diagnostic of CVD diamond films and coatings. Measurement and diagnostic techniques studied include scanning electron microscopy, transmission electron microscopy, atomic force microscopy, stylus profilometry, x-ray diffraction, electron diffraction, Raman spectroscopy, Rutherford backscattering, elastic recoil spectroscopy, and friction examination. Each measurement and diagnostic technique provides unique information. A combination of techniques can provide the technical information required to understand the quality and properties of CVD diamond films, which are important to their application in specific component systems and environments. In this study the combination of measurement and diagnostic techniques was successfully applied to correlate deposition parameters and resultant diamond film composition, crystallinity, grain size, surface roughness, and coefficient of friction.

Miyoshi, Kazuhisa↗
DOE OSTI2019

XAFS Spectroscopy Study of Microstructure and Electronic Structure of Heterosystems Containing Si/GeMn Quantum Dots

Using X-ray absorption near edge structure spectroscopy, extended X-ray absorption fine structure spectroscopy, atomic force microscopy, and Rutherford backscattering spectroscopy, the features of the microstructure and elemental composition of Si/GeMn magnetic systems obtained by molecular beam epitaxy and containing quantum dots are studied. Intense mixing of Ge and Si atoms is found in all samples. The degree of mixing (diffusion) correlates with the conditions of synthesis of Si/GeMn samples. For these systems, direct contacts of germanium atoms with manganese atoms are characterized and the presence of interstitial manganese with tetrahedral coordination and substitution of manganese for germanium and silicon in the lattice sites is found. The presence of stoichiometric phases Ge{sub 8}Mn{sub 11}, Ge{sub 3}Mn{sub 5} is not detected. The correlations of the Ge, Si, and Mn coordination numbers in the Ge environment are determined both with the Mn flux value (evaporator temperature) and with the temperature at which quantum dots are grown, as well as with other synthesis conditions. The manganese concentration in the samples is determined.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2010

Formation of epitaxial metastable NiGe{sub 2} thin film on Ge(100) by pulsed excimer laser anneal

Epitaxial nickel digermanide (NiGe{sub 2}), a metastable phase, was formed by laser annealing Ni on (100) germanium-on-silicon substrates. The NiGe{sub 2} formation was investigated using transmission electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, Rutherford backscattering spectroscopy, and first-principles calculations. The formation mechanism of NiGe{sub 2} is discussed and is attributed to both the reduced interfacial energy at the NiGe{sub 2}/Ge(100) interface and the kinetic aspects of the laser annealing reaction associated with phase transformation and film agglomeration.

36 MATERIALS SCIENCE↗