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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Atomic-Scale Manipulation and In Situ Characterization with Scanning Tunneling Microscopy

Scanning tunneling microscope (STM) has presented a revolutionary methodology to nanoscience and nanotechnology. It enables imaging of the topography of surfaces, mapping the distribution of electronic density of states, and manipulating individual atoms and molecules, all at atomic resolutions. In particular, atom manipulation capability has evolved from fabricating individual nanostructures toward the scalable production of the atomic-sized devices bottom-up. The combination of precision synthesis and in situ characterization has enabled direct visualization of many quantum phenomena and fast proof-of-principle testing of quantum device functions with immediate feedback to guide improved synthesis. Several representative examples are reviewed to demonstrate the recent development of atomic-scale manipulation, focusing on progress that addresses quantum properties by design in several technologically relevant materials systems. Integration of several atomically precisely controlled probes in a multiprobe STM system vastly extends the capability of in situ characterization to a new dimension where the charge and spin transport behaviors can be examined from mesoscopic to atomic length scale. The automation of atomic-scale manipulation and the integration with well-established lithographic processes further push this bottom-up approach to a new level that combines reproducible fabrication, extraordinary programmability, and the ability to produce large-scale arrays of quantum structures.

47 OTHER INSTRUMENTATION↗
NASA NTRS1988

Direct control and characterization of a Schottky barrier by scanning tunneling microscopy

Scanning tunneling microscopy (STM) methods are used to directly control the barrier height of a metal tunnel tip-semiconductor tunnel junction. Barrier behavior is measured by tunnel current-voltage spectroscopy and compared to theory. A unique surface preparation method is used to prepare a low surface state density Si surface. Control of band bending with this method enables STM investigation of semiconductor subsurface properties.

Bell, L. D.↗
DOE OSTI2015

Combined frequency modulated atomic force microscopy and scanning tunneling microscopy detection for multi-tip scanning probe microscopy applications

A method which allows scanning tunneling microscopy (STM) tip biasing independent of the sample bias during frequency modulated atomic force microscopy (AFM) operation is presented. The AFM sensor is supplied by an electronic circuit combining both a frequency shift signal and a tunneling current signal by means of an inductive coupling. This solution enables a control of the tip potential independent of the sample potential. Individual tip biasing is specifically important in order to implement multi-tip STM/AFM applications. An extensional quartz sensor (needle sensor) with a conductive tip is applied to record simultaneously topography and conductivity of the sample. The high resonance frequency of the needle sensor (1 MHz) allows scanning of a large area of the surface being investigated in a reasonably short time. A recipe for the amplitude calibration which is based only on the frequency shift signal and does not require the tip being in contact is presented. Additionally, we show spectral measurements of the mechanical vibration noise of the scanning system used in the investigations.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Self-assembly of F16ZnPc thin films and F16ZnPc-ZnPc heterostructures on deactivated Si surfaces studied by scanning tunneling microscopy

Using scanning tunneling microscopy, we show that hexadecafluorinated zinc phthalocyanine (F 16 ZnPc) molecules form two morphologically different self-assembled structures that both display point-on-line coincident epitaxial registration with the deactivated Si(111)-B 3$-$√×3$-$√ surface. The packing motif in these structures suggests that fluorination of conjugated organic molecules can lead to stronger molecule-substrate interaction, π-π intermolecular interaction, and side-to-side intermolecular repulsion. Here, the delicate balance and interplay between these interactions determine the self-assembly behavior of fluorinated molecules. Furthermore, we demonstrate the formation of vertically and laterally stacked F 16 ZnPc-ZnPc heterojunctions, allowing for future spectroscopy investigation of molecular electronic structures and charge transfer behavior at organic-organic hetero-interfaces

36 MATERIALS SCIENCE↗
NASA NTRS1993

Characterization of Si3N4/SiO2 optical channel waveguides by photon scanning tunneling microscopy

Photon scanning tunneling microscopy (PSTM) is used to characterize Si3N4/Si02 optical channel waveguides being used for integrated optical-micromechanical sensors. PSTM utilizes an optical fiber tapered to a fine point which is piezoelectrically positioned to measure the decay of the evanescent field intensity associated with the waveguide propagating mode. Evanescent field decays are recorded for both ridge channel waveguides and planar waveguide regions. Values for the local effective refractive index are calculated from the data for both polarizations and compared to model calculations.

Wang, Yan↗
DOE OSTI2021

Simplified feedback control system for scanning tunneling microscopy

A Scanning Tunneling Microscope (STM) is one of the most important scanning probe tools available to study and manipulate matter at the nanoscale. In a STM, a tip is scanned on top of a surface with a separation of a few Å. Often, the tunneling current between the tip and the sample is maintained constant by modifying the distance between the tip apex and the surface through a feedback mechanism acting on a piezoelectric transducer. This produces very detailed images of the electronic properties of the surface. The feedback mechanism is nearly always made using a digital processing circuit separate from the user computer. Here, we discuss another approach using a computer and data acquisition through the universal serial bus port. We find that it allows successful ultralow noise studies of surfaces at cryogenic temperatures. We show results on different compounds including a type II Weyl semimetal (WTe2), a quasi-two-dimensional dichalcogenide superconductor (2H–NbSe2), a magnetic Weyl semimetal (Co3Sn2S2), and an iron pnictide superconductor (FeSe).

Martín-Vega, Francisco (ORCID:0000000333177833)↗
DOE OSTI2016

Ultra-high vacuum compatible optical chopper system for synchrotron x-ray scanning tunneling microscopy

High-speed beam choppers are a crucial part of time-resolved x-ray studies as well as a necessary component to enable elemental contrast in synchrotron x-ray scanning tunneling microscopy (SX-STM). However, many chopper systems are not capable of operation in vacuum, which restricts their application to x-ray studies with high photon energies, where air absorption does not present a significant problem. To overcome this limitation, we present a fully ultra-high vacuum (UHV) compatible chopper system capable of operating at variable chopping frequencies up to 4 kHz. The lightweight aluminum chopper disk is coated with Ti and Au films to provide the required beam attenuation for soft and hard x-rays with photon energies up to about 12 keV. The chopper is used for lock-in detection of x-ray enhanced signals in SX-STM.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Detecting element specific electrons from a single cobalt nanocluster with synchrotron x-ray scanning tunneling microscopy

Here, we use a nanofabricated scanning tunneling microscope tip as a detector to investigate local X-ray induced tunneling and electron emission from a single cobalt nanocluster on a Au(111) surface. The tip-detector is positioned a few angstroms above the nanocluster, and ramping the incident X-ray energy across the Co photoabsorption K-edge enables the detection of element specific electrons. Atomic-scale spatial dependent changes in the X-ray absorption cross section are directly measured by taking the X-ray induced current as a function of X-ray energy. From the measured sample and tip currents, element specific X-ray induced current components can be separated and thereby the corresponding yields for the X-ray induced processes of the single cobalt nanocluster can be determined. The detection of element specific synchrotron X-ray induced electrons of a single nanocluster opens a new avenue for materials characterization on a one particle at-a-time basis.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Characterization of one-dimensional molecular chains of 4,4′-biphenyl diisocyanide on Au(111) by scanning tunneling microscopy

The morphology and electronic structure of vapor deposited 4,4′-biphenyldiisocyanide (BPDI) on a Au(111) surface were investigated using variable-temperature scanning tunneling microscopy. When deposited at room temperature, BPDI molecules form one-dimensional molecular chains similar to that recently observed for the structurally related 1,4-phenyl diisocyanide (PDI). Compared to PDI, the longer periodicity for the BPDI molecular chains is consistent with the addition of a second phenyl ring and supports a structural model in which the BPDI molecules lie parallel to the surface and interconnected by Au-adatoms. The molecular chains are mostly aligned along the [11{sup -}0] direction of the Au(111) substrate, but exhibit frequent changes in angle that are consistent with directions between fcc and hcp three-fold hollow sites. Dispersion-corrected density functional theory calculations for one-dimensional chains of BPDI molecules bound end-to-end via their isocyanide groups to Au-adatoms reproduce the observed periodicity of the chains and show that this morphology is energetically favored over upright binding with one free —NC group. The spatially resolved conductance (dI/dV) map for BPDI on Au(111) exhibits a feature centered at −0.67 eV below the Fermi level which are delocalized along the chain with maxima at the Au-adatom and biphenyl positions. This occupied resonant feature is close to that previously observed for the PDI in both photoemission and conductance measurements and is attributed to an occupied interfacial state resulting from BPDI-Au interactions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without breaking vacuum, and convenient visual access to the sample and tip inside a superconducting magnet cryostat. A sample/tip handling system is optimized for both the molecular beam epitaxy growth system and the scanning tunneling microscope system. The sample/tip handing system enables in situ STM studies on epitaxially grown samples, and tip exchange in the superconducting magnet cryostat. The hybrid molecular beam epitaxy and low temperature scanning tunneling microscopy system is capable of growing semiconductor-based hetero-structures with controlled accuracy down to a single atomic-layer and imaging them down to atomic resolution.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Iron on GaN(0001) pseudo-1 × 1 (1+1/(12) ) investigated by scanning tunneling microscopy and first-principles theory

We have investigated sub-monolayer iron deposition on atomically smooth GaN(0001) pseudo-1 × 1 (1+1/(12) ). The iron is deposited at a substrate temperature of 360 °C, upon which reflection high energy electron diffraction shows a transformation to a √(3)×√(3)-R30° pattern. After cooling to room temperature, the pattern transforms to a 6 × 6, and scanning tunneling microscopy reveals 6 × 6 reconstructed regions decorating the GaN step edges. First-principles theoretical calculations have been carried out for a range of possible structural models, one of the best being a Ga dimer model consisting of 2/9 monolayer of Fe incorporated into 7/3 monolayer of Ga in a relaxed but distorted structure.

36 MATERIALS SCIENCE↗
DOE OSTI2015

The Ehrlich–Schwoebel barrier on an oxide surface: a combined Monte-Carlo and in situ scanning tunneling microscopy approach

The controlled growth of epitaxial films of complex oxides requires an atomistic understanding of key parameters determining final film morphology, such as termination dependence on adatom diffusion, and height of the Ehrlich–Schwoebel (ES) barrier. In this study, through an in situ scanning tunneling microscopy study of mixed-terminated La 5/8 Ca 3/8 MnO 3 (LCMO) films, we image adatoms and observe pile-up at island edges. Image analysis allows determination of the population of adatoms at the edge of islands and fractions on A-site and B-site terminations. A simple Monte-Carlo model, simulating the random walk of adatoms on a sinusoidal potential landscape using Boltzmann statistics is used to reproduce the experimental data, and provides an estimate of the ES barrier as ~0.18 ± 0.04 eV at T = 1023 K, similar to those of metal adatoms on metallic surfaces. In conclusion, these studies highlight the utility of in situ imaging, in combination with basic Monte-Carlo methods, in elucidating the factors which control the final film growth in complex oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2016

In silico simulations of tunneling barrier measurements for molecular orbital-mediated junctions: A molecular orbital theory approach to scanning tunneling microscopy

A new simulator for scanning tunneling microscopy (STM) is presented based on the linear combination of atomic orbitals molecular orbital (LCAO-MO) approximation for the effective tunneling Hamiltonian, which leads to the convolution integral when applied to the tip interaction with the sample. This approach intrinsically includes the structure of the STM tip. Through this mechanical emulation and the tip-inclusive convolution model, dI/dz images for molecular orbitals (which are closely associated with apparent barrier height, ϕ{sub ap}) are reported for the first time. For molecular adsorbates whose experimental topographic images correspond well to isolated-molecule quantum chemistry calculations, the simulator makes accurate predictions, as illustrated by various cases. Distortions in these images due to the tip are shown to be in accord with those observed experimentally and predicted by other ab initio considerations of tip structure. Simulations of the tunneling current dI/dz images are in strong agreement with experiment. The theoretical framework provides a solid foundation which may be applied to LCAO cluster models of adsorbate–substrate systems, and is extendable to emulate several aspects of functional STM operation.

42 ENGINEERING↗
NASA NTRS1987

'Oxide-free' tip for scanning tunneling microscopy

A new tip for scanning tunneling microscopy and a tip repair procedure that allows one to reproducibly obtain atomic images of highly oriented pyrolytic graphite with previously inoperable tips are reported. The tips are shown to be relatively oxide-free and highly resistant to oxidation. The tips are fabricated with graphite by two distinct methods.

Colton, R. J.↗
DOE OSTI2019

Magnification Effects in Scanning Tunneling Microscopy: the Role of Surface Radicals

Scanning tunneling microscopy (STM) is a fundamental tool for determination of the surface atomic structure. However, the interpretation of high resolution microscopy images is not straightforward. In this paper we provide a physical insight on how STM images can suggest atomic locations which are distinctively different from the real ones. This effect should be taken into account when interpreting high-resolution STM images obtained on surfaces with directional bonds. It is shown that spurious images are formed in the presence of polarized surface radicals showing a pronounced angle with respect to the surface normal. This issue has been overlooked within the surface science community and often disregarded by experimentalists working with STM. Without loss of generality, we illustrate this effect by the magnification observed for pentamer-like structures on (110), (113), and (331) surfaces of silicon and germanium.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗