Search NASA⌕ Search

SEARCH · Search NASA

Results for “SILICON IONS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

Silicon ions below 100 km: A case for SiO2(+)

Silicon ions are normally detected at altitudes above 100 km and within sporadic E layers. Traces have rarely been observed within the more permanent metallic layer near 93 km. This is surprising since silicon is an important constituent of chondritic meteorites, which ablate material in this region to provide a primary source of the metallic species observed there. Evidence is presented that Si(+)ions form SiO2(+) at the lower altitudes, and exist in this ionic state prior to recombination. A rocket launched from El Arenosillo, Spain on 3 July 1972, at 0743 LMT, during the predicted period of the Beta Taurids meteor shower, passed through a continuous belt of metallic ions that began near 85 km, ended near 115 km, and exhibited an order of magnitude increase in the form of a layer near 114 km. Si(+)was measured in and below the ledge down to 103 km. It showed a rapid decrease below this height. Radiative association is offered as a primary mechanism for SiO2(+) production.

Goldberg, R. A.↗
NASA NTRS1977

Line strengths, collision strengths and excitation rates for multiply-charged silicon ions

In the present paper, the line strengths, collision strengths, and rate coefficients are calculated for a variety of transitions in multiply charged silicon ions from Si(VI) to Si(XIV). The line strengths are obtained by using Clementi wave functions for the ground-state configuration, and excited-state wave functions generated by a semiempirical method. The collision strengths are calculated in an LS coupling scheme in the distorted-wave approximation, neglecting exchange except for the helium-like transitions. These results are then integrated over a Maxwellian velocity distribution function to yield rate coefficients. The rates are presented graphically and also in terms of a two-parameter fit.

Davis, J.↗
NASA NTRS1977

The influence of autoionization accompanied by excitation on the dielectronic recombination and the ionization equilibrium of silicon ions

The dielectronic recombination rate coefficients have been calculated for the various ionization stages of silicon. Account has been taken of all stabilizing radiative transitions and all autoionization processes which involve a single-electron electric-dipole transition of the recombining ion core. For certain ions the dielectronic recombination rates, although still larger than the direct radiative recombination rates, are found to be substantially reduced when account is taken of the effects of a previously neglected autoionization process in which the excited recombining ion core undergoes a delta n = 0 transition to a lower excited state. The temperatures at which these ions have their maximum abundance in corona equilibrium are significantly reduced when use is made of the new dielectronic recombination rates. Calculations are also presented for the total rates of radiative energy loss from isothermal steady-state plasmas due to the line and continuum emission of silicon ions.

Jacobs, V. L.↗
DOE OSTI2015

Interaction of human endothelial cells and nickel-titanium materials modified with silicon ions

The paper studies the influence of chemical and phase compositions of NiTi surface layers modified with Si ions by plasma immersion implantation on their interaction with endothelial cells. It is shown that certain technological modes of Si ion implantation enhance the adhesion, proliferation, and viability of endothelial cells. It is found that the Si-modified NiTi surface is capable of stimulating the formation of capillary-like structures in the cell culture.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Probing the Reactivity of the Active Material of a Li-Ion Silicon Anode with Common Battery Solvents

Calculations and modeling have shown that replacing the traditional graphite anode with silicon can greatly improve the energy density of lithium-ion batteries. However, the large volume change of silicon particles and high reactivity of lithiated silicon when in contact with the electrolyte lead to rapid capacity fading during charging/discharging processes. In this report, we use specific lithium silicides (LS) as model compounds to systematically study the reaction between lithiated Si and different electrolyte solvents, which provides a powerful platform to deconvolute and evaluate the degradation of various organic solvents in contact with the active lithiated Si-electrode surface after lithiation. Nuclear Magnetic Resonance (NMR) characterization results show that a cyclic carbonate such as ethylene carbonate is chemically less stable than a linear carbonate such as ethylmethyl carbonate, fluoroethylene carbonate, and triglyme as they are found to be more stable when mixed with LS model compounds. Furthermore, guided by the experimental results, two ethylene carbonate (EC)-free electrolytes are studied, and the electrochemical results show improvements with graphite-free Si electrodes relative to the traditional ethylene-carbonate-based electrolytes. More importantly, the study contributes to our understanding of the significant fundamental chemical and electrochemical stability differences between silicon and traditional graphite lithium-ion battery (LIB) anodes and suggests a focused development of electrolytes with specific chemical stability vs lithiated silicon which can passivate the surface more effectively.

25 ENERGY STORAGE↗
DOE OSTI2015

Broadening and shift of the spectral lines of hydrogen atoms and silicon ions in laser plasma

We report an experimental investigation of the broadening and shift of discrete lines in the plasma spectrum produced in the laser ablation of silicon in a broad pressure range (10{sup 2} – 10{sup 7} Pa) of the ambient gas (Ar, He, H{sub 2}). The broadening and line shifts are measured in relation to the distance from the target and initial gas pressure. The threshold nature of the resulting dependences is found to be related to the formation of virtual percolation clusters proceeding in the hot dense plasma. (laser plasma)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1975

Silicon ions below 100 km - A case for SiO2/+/

An investigation regarding the occurrence of Si ions is conducted, taking into account an unusual metal ion structure observed during a meteor shower event. Loss processes involving silicon oxides are considered in connection with a study of the reasons for the unique Si(+) distribution found. It is suggested that below 100 km Si(+) is rapidly depleted by two- and three-body reactions with molecular oxygen, forming SiO2(+) which then recombines.

Goldberg, R. A.↗
NASA NTRS1989

Gas-phase formation of silicon carbides, oxides, and sulphides from atomic silicon ions

A systematic experimental study of the kinetics and mechanisms of the chemical reactions in the gas phase between ground-state Si(+)2p and a variety of astrophysical molecules. The aim of this study is to identify the reactions which trigger the formation of chemical bonds between silicon and carbon, oxygen and sulphur, and the chemical pathways which lead to further molecular growth. Such knowledge is valuable in the identification of new extraterrestrial silicon-bearing molecules and for an assessment of the gas-phase transition from atomic silicon to silicon carbide and silicate grain particles in carbon-rich and oxygen-rich astrophysical environments.

Bohme, Diethard K.↗
DOE OSTI2024

Silicon ion radiation as a viable surrogate for emulating neutron radiation damage in silicates

Abstract Nuclear power plants are aging around the world, and a precise assessment of irradiation damage in their components is needed. One key component, concrete, and specifically the silicates in its aggregates, can undergo significant expansion upon neutron radiation, which can lead to cracking and, ultimately, structural failure. However, assessing and predicting the extent of damage via neutron radiation is challenging due to reasons such as residual radioactivity and, most importantly, the high time involved. Here, we evaluate whether ion radiation can be a viable surrogate. Specifically, by employing Si 2+ ion radiations and a comprehensive multi-modal imaging protocol, we report mineral-specific responses for key silicates such as quartz, albite, anorthite, and microcline. We find that 10 MeV Si 2+ ions result in mineral expansions that are remarkably comparable to neutron radiation equivalent expansions (R 2 = 0.86, RMSE = 1.29%), opening up pathways towards rapid assessment of silicates subject to irradiation.

36 MATERIALS SCIENCE↗
NASA NTRS1992

Atomic data and spectral analysis of carbon, nitrogen, oxygen and silicon ions observed with the International Ultraviolet Explorer

According to the plan presented in the original proposal we have now completed most of the atomic calculations involving collision strengths and rate coefficients for electron impact excitation of C II, N III, and O IV ions. These have been reported in the first two publications appended with this report. We have now moved into the applications phase of the project with the new data being used to analyze the International Ultraviolet Explorer (IUE) observations of a variety of objects, as described in the third publication recently submitted (also appended). The analysis and interpretation of archival data will continue well into the next year with several collaborators that the PI and Co-PI are involved with. In addition, the atomic calculations on Si II have been started.

Pradhan, Anil K.↗
NASA NTRS2010

The Biological Effectiveness of Silicon Ions is Significantly Higher than Iron Ions for the Induction of Chromosome Damage in Human Lymphocytes

Chromosome aberrations were measured in human peripheral blood lymphocytes after in vitro exposure to Si-28-ions with energies ranging from 90 to 600 MeV/u, or Fe-56-ions with energies ranging from 200 to 5,000 MeV/u. The LET of the various Fe beams in this study ranged from 145 to 440 keV/micron and the LET Si ions ranged from 48 to 158 keV/micron. Doses delivered were in the 10 to 200 cGy range. Dose response curves for chromosome exchanges in cells at first division after exposure, measured using fluorescence in situ hybridization (FISH) with whole chromosome probes, were fitted with linear or linear-quadratic functions. The relative biological effectiveness (RBE) was estimated from the initial slope of the dose response curve for chromosome damage with respect to gamma-rays. The estimates of RBE(sub max) values for total chromosome exchanges ranged from 4.4+/-0.4 to 31.5+/-2.6 for Fe ions, and 11.8+/-1.0 to 42.2+/-3.3 for Si ions. The highest RBE(sub max) value for Fe ions was obtained with the 600 Mev/u beam and 170 MeV/u beam produced the highest RBE(sub max) value for Si ions. For both ions the RBE(sub max) values increased with LET, reaching a maximum at about 180 keV/micron for Fe and about 100 keV/micron for Si, and decreased with further increase in LET.

George, Kerry↗
NASA NTRS1970

Ion implantation damage effects in silicon

Ion implantation lattice damage effects in crystalline silicon with allowance for optical reflectivity, considering annealing temperature and amorphous layer formation

Eberle, D. E.↗
DOE OSTI2019

Features of Defect Formation in Nanostructured Silicon under Ion Irradiation

Nanostructured silicon is irradiated by Si{sup +} and He{sup +} ions with energies of 200 and 150 keV, respectively. Destruction of the structure of irradiated samples and the accumulation of defects at different irradiation fluences are investigated by Raman scattering. It is shown that single-crystal silicon films are amorphized under irradiation at 0.7 displacements per atom. However, at 0.5 displacements per atom, porous silicon does not completely amorphize and the Raman spectra contain a weak signal of the amorphous silicon phase along with a pronounced signal of the crystalline silicon phase. The size of nanocrystals in the structure of porous silicon at different irradiation fluences is estimated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Study of the distribution profile of iron ions implanted into silicon

Iron ions with energies of 90 and 250 keV and a dose of 10{sup 16} cm{sup –2} are implanted into a silicon single crystal with the (110) orientation. The method of Rutherford backscattering in combination with channeling is used to study the distribution profiles of the introduced impurity and also the profiles of the distribution of radiation-induced defects in the crystal lattice. Experimental data are compared with the results of simulation performed using the TRIM software package. It is shown that, at an energy of 4.6 keV/nucleon, the average projected ranges coincide; however, at an energy of 1.6 keV/nucleon, the difference amounts to 35%. In addition, it is shown that the calculation incorrectly takes into account the dose dependence at energies of 1.6–4.6 keV/nucleon.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Ion Distribution And Electronic Stopping Power For Au ions In Silicon Carbide

Accurate knowledge of ion distribution and electronic stopping power for heavy ions in light targets is highly desired due to the large errors in prediction by the widely used Stopping and Range of Ions in Matter (SRIM) code. In this study, Rutherford backscattering spectrometry (RBS)and secondary ion mass spectrometry (SIMS) are used as complementary techniques to determine the distribution of Au ions in SiC with energie sfrom 700 keV to 15 MeV. In addition, asingle ion technique with an improved data analysis procedure is applied to measure the electronic stopping power for Au ions in SiC with energies up to ~70 keV/nucleon. Large overestimation of the electronic stopping power is found by SRIM prediction in the low energy regime up to ~50 keV/nucleon. The stopping power data and the ion ranges are crosschecked with each other and a good agreement is achieved.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2017

Characterization of the Surface of Silver Ion-Implanted Silicon by Optical Reflectance

The optical reflection of the surface of silicon implanted with Ag{sup +} ions at low energy of 30 keV in a wide dosage range of 5.0·10{sup 14}–1.5·10{sup 17} ion/cm{sup 2} was studied in parallel with electron microscopy observation of the samples. It was found that with increasing ion dose of irradiation, the reflection intensity in the UV range of the Si spectrum decreases monotonically due to amorphization and macrostructuring of Si near-surface layer. In the long-wavelength region of the reflection spectra, a selective band with a maximum near 830 nm is recorded due to the plasmon resonance of ion-synthesized Ag nanoparticles.

77 NANOSCIENCE AND NANOTECHNOLOGY↗