Evaluation of semiconductor devices using the scanning electron microscope
Scanning electron microscope for evaluating failure mechanisms in semiconductor devices, and for three-dimensional representation of biological specimens
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Microcircuit testing and fabrication, using scanning electron microscopes
Scanning electron microscopes are used to determine both user-induced damages and manufacturing defects subtle enough to be missed by conventional light microscopy. Method offers greater depth of field and increased working distances.
Nicolas, D. P.↗
Resolving the Electron Plume within a Scanning Electron Microscope
Scanning electron microscopy (SEM), a century-old technique, is today a ubiquitous method of imaging the surface of nanostructures. However, most SEM detectors simply count the number of secondary electrons from a material of interest, and thereby overlook the rich material information contained within them. Here, by simple modifications to a standard SEM tool, we resolve the momentum and energy information on secondary electrons by directly imaging the electron plume generated by the electron beam of the SEM. Leveraging these spectroscopic imaging capabilities, our technique is able to image lateral electric fields across a prototypical silicon p–n junctions and to distinguish differently doped regions, even when buried beyond depths typically accessible by SEM. Intriguingly, the subsurface sensitivity of this technique reveals unexpectedly strong surface band bending within nominally passivated semiconductor structures, providing useful insights for complex layered component designs, in which interfacial dynamics dictate device operation. Further, these capabilities for noninvasive, multimodal probing of complicated electronic components are crucial in today’s electronic manufacturing but is largely inaccessible even with sophisticated techniques. These results show that seemingly simple SEM can be extended to probe complex and useful material properties.
36 MATERIALS SCIENCE↗
The MOCHII ISS National Laboratory: The First Spacecraft Based Scanning Electron Microscope
Introduction: Scanning electron microscopy (SEM) in concert with element identification by energy dispersive Xray (EDX) spectroscopy has become an indispensable tool in the analyses of extraterrestrial materials. Nevertheless, to-date, SEM-EDX instrumentation has remained purely in the purview of terrestrial laboratories due to their size, complexity, and operational requirements. However, in January 2022 a miniaturized SEM-EDX called MOCHII became the first successful space-based instrument of its kind, following its deployment onboard the International Space Station (ISS). It represents the culmination of nearly 40 years of technological development. We have performed an on-orbit study with MOCHII with the goal of evaluating its potential as the progenitor of a new generation of spacecraftbased instruments for use in future manned and robotic planetary exploration missions. Out goal has been to validate the on-orbit investigation of samples relevant to astromaterials and astrobiology. We have performed in-situ analyses on standards and a freshly fractured fragment of the Martian meteorite Allan Hills 84001 which was first analyzed, prior to launch, using an engineering MOCHII ground unit located at Johnson Space Center in Houston. Results of both imaging and compositional analyses substantiates the utility of remote SEM-EDX analyses in low Earth orbit (LEO).
Miniature Scanning Electron Microscope↗
Simulation and Characterization of a Miniaturized Scanning Electron Microscope
A miniaturized Scanning Electron Microscope (mSEM) for in-situ lunar investigations is being developed at NASA Marshall Space Flight Center with colleagues from the University of Alabama in Huntsville (UAH), Advanced Research Systems (ARS), the University of Tennessee in Knoxville (UTK) and Case Western Reserve University (CWRU). This effort focuses on the characterization of individual components of the mSEM and simulation of the complete system. SEMs can provide information on the size, shape, morphology and chemical composition of lunar regolith. Understanding these basic properties will allow us to better estimate the challenges associated with In-Situ Resource Utilization and to improve our basic science knowledge of the lunar surface (either precluding the need for sample return or allowing differentiation of unique samples to be returned to Earth.) The main components of the mSEM prototype includes: a cold field emission electron gun (CFEG), focusing lens, deflection/scanning system and backscatter electron detector. Of these, the electron gun development is of particular importance as it dictates much of the design of the remaining components. A CFEG was chosen for use with the lunar mSEM as its emission does not depend on heating of the tungsten emitter (lower power), it offers a long operation lifetime, is orders of magnitude brighter than tungsten hairpin guns, has a small source size and exhibits low beam energy spread.
Gaskin, Jessica A.↗
Development of a scanning electron mirror microscope
Scanning electron mirrors microscope design and development
Moll, S. H.↗
Development of an in situ ion irradiation scanning electron microscope
An in situ ion irradiation scanning electron microscope (I 3 SEM) has been developed, installed, and integrated into the Ion Beam Laboratory at Sandia National Laboratories. The I 3 SEM facility combines a field emission, variable pressure, scanning electron microscope, a 6 MV tandem accelerator, high flux low energy ion source, an 808 nm-wavelength laser, and multiple stages to control the thermal and mechanical state of the sample observed. The facility advances real-time understanding of materials evolution under combined environments at the mesoscale. As highlighted in multiple examples, this unique combination of tools is optimized for studying mesoscale material response in overlapping extreme environments, allowing for simultaneous ion irradiation, implantation, laser bombardment, conductive heating, cooling, and mechanical deformation.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Diffusion length measurements using the scanning electron microscope
A measurement technique employing the scanning electron microscope is described in which values of the true bulk diffusion length are obtained. It is shown that surface recombination effects can be eliminated through the application of highly doped surface field layers. The influence of high injection level effects and low-high junction current generation on the resulting measurement was investigated. Close agreement is found between the diffusion lengths measured by this method and those obtained using a penetrating radiation technique.
Weizer, V. G.↗
Unveiling the Mysteries of Mars with a Miniaturized Variable Pressure Scanning Electron Microscope (MVP-SEM)
Development of a miniaturized scanning electron microscope that will utilize the martian atmosphere to dissipate charge during analysis continues. This instrument is expected to be used on a future rover or lander to answer fundamental Mars science questions. To identify the most important questions, a survey was taken at the 47th Lunar and Planetary Science Conference (LPSC). From the gathered information initial topics were identified for a SEM on the martian surface. These priorities are identified and discussed below. Additionally, a concept of operations is provided with the goal of maximizing the science obtained with the minimum amount of communication with the instrument.
Mars↗
Unveiling the Mysteries of Mars with a Miniaturized Variable Pressure Scanning Electron Microscope (MVP-SEM)
Development of a miniaturized scanning electron microscope that will utilize the martian atmosphere to dissipate charge during analysis continues. This instrument is expected to be used on a future rover or lander to answer fundamental Mars science questions. To identify the most important questions, a survey was taken at the 47th Lunar and Planetary Science Conference (LPSC). From the gathered information initial topics were identified for a SEM on the martian surface. These priorities are identified and discussed below. Additionally, a concept of operations is provided with the goal of maximizing the science obtained with the minimum amount of communication with the instrument.
Lunar & Planetary Science & Exploration↗
The measurement of thin film thicknesses in normally inaccessible locations with the scanning electron microscope
Thickness measurement for thin films in inaccessible locations using scanning electron microscope, comparing accuracy with interferometric techniques
Anstead, R. J.↗
Diffusion length measurement using the scanning electron microscope
The present work describes a measuring technique employing the scanning electron microscope in which values of the true bulk diffusion length are obtained. It is shown that surface recombination effects can be eliminated through application of highly doped surface field layers. The effects of high injection level and low-high junction current generation are investigated. Results obtained with this technique are compared to those obtained by a penetrating radiation (X-ray) method, and a close agreement is found. The SEM technique is limited to cells that contain a back surface field layer.
Weizer, V. G.↗
Interpretation of scanning electron microscope measurements of minority carrier diffusion lengths in semiconductors
In scanning electron microscope (SEM) injection measurements of minority carrier diffusion lengths some uncertainties of interpretation exist when the response current is nonlinear with distance. This is significant in epitaxial layers where the layer thickness is not large in relation to the diffusion length, and where there are large surface recombination velocities on the incident and contact surfaces. An image method of analysis is presented for such specimens. A method of using the results to correct the observed response in a simple convenient way is presented. The technique is illustrated with reference to measurements in epitaxial layers of GaAs. Average beam penetration depth may also be estimated from the curve shape.
Flat, A.↗
Quantification of grain boundary effects on the geometrically necessary dislocation density evolution and strain hardening of polycrystalline Mg 4Al using in situ tensile testing in scanning electron microscope and HR-EBSD
In situ tensile testing in a scanning electron microscope (SEM) in conjunction with high-resolution electron backscatter diffraction (HR-EBSD) under load was used to characterize the evolution of geometrically necessary dislocation (GND) densities at individual grain boundaries as a function of applied strain in a polycrystalline Mg—4Al alloy. The increase in GND density was investigated at plastic strains of 0 %, 0.6 %, 2.2 %, 3.3 % from the area including 76 grains and correlated with (i) geometric compatibility between slip systems across grain boundaries, and (ii) plastic incompatibility. We develop expressions for the grain boundary GND density evolution as a function of plastic strain and plastic incompatibility, from which uniaxial tensile stress-strain response of polycrystalline Mg—4Al are computed and compared with experimental measurement. The findings in this study contribute to understanding the mechanisms governing the strain hardening response of single-phase polycrystalline alloys and more reliable prediction of mechanical behaviors in diverse microstructures.
Geometrically necessary dislocations↗
Failure analysis using a scanning electron microscope.
Component failure modes analysis using scanning electron microscopy, noting applications to study of semiconductors and wire plating anomalies
Anstead, R. J.↗
Using the scanning electron microscope on the production line to assure quality semiconductors
The use of the scanning electron microscope to detect metallization defects introduced during batch processing of semiconductor devices is discussed. A method of determining metallization integrity was developed which culminates in a procurement specification using the scanning microscope on the production line as a quality control tool. Batch process control of the metallization operation is monitored early in the manufacturing cycle.
Adolphsen, J. W.↗
Determination of bulk diffusion lengths for angle-lapped semiconductor material via the scanning electron microscope: A theoretical analysis
A standard procedure for the determination of the minority carrier diffusion length by means of a scanning electron microscope (SEM) consists in scanning across an angle-lapped surface of a P-N junction and measuring the resultant short circuit current I sub sc as a function of beam position. A detailed analysis of the I sub sc originating from this configuration is presented. It is found that, for a point source excitation, the I sub sc depends very simply on x, the variable distance between the surface and the junction edge. The expression for the I sub sc of a planar junction device is well known. If d, the constant distance between the plane of the surface of the semiconductor and the junction edge in the expression for the I of a planar junction is merely replaced by x, the variable distance of the corresponding angle-lapped junction, an expression results which is correct to within a small fraction of a percent as long as the angle between the surfaces, 2 theta sub 1, is smaller than 10 deg.
Vonroos, O.↗
Practical application of HgI2 detectors to a space-flight scanning electron microscope
Mercuric iodide X-ray detectors have been undergoing tests in a prototype scanning electron microscope system being developed for unmanned space flight. The detector program addresses the issues of geometric configuration in the SEM, compact packaging that includes separate thermoelectric coolers for the detector and FET, X-ray transparent hermetic encapsulation and electrical contacts, and a clean vacuum environment.
Bradley, J. G.↗