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Results for “Silicon photodiode”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

A Custom Low-Noise Silicon Photodiode Detector Designed for Use With X-Ray Capillary Optics

We present the first results of a custom low-noise silicon photodiode detector designed for use with X-ray capillary optics. This system is intended to perform as a smaller, lighter, and low-powered alternative to currently existing X-ray telescope technologies. The detector has an active area with a diameter of 100 μm, and its small size leads to a low capacitance of well under 1 pF and a leakage current of 1 pA or less at the depletion voltage. We tested the detector with both a discrete preamp and an ultralow-noise front-end application-specific integrated circuit (ASIC). The front-end ASIC, developed at Brookhaven National Laboratory, was designed for low-capacitance detectors but had not been previously tested with a detector. Here, we discuss the detector design, the experimental setup, and the resulting detector performance. Using radioactive laboratory sources, we measure a full-width at half-maximum (FWHM) of 211 ± 8 eV at 5.9 keV with the ASIC and are able to set the threshold as low as 0.6 keV.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Performance of black silicon photodiodes for VUV detection in noble liquids

Black silicon (b-Si) photodiodes are an emerging technology that employs silicon nanostructures to enhance the efficiency of photon detection. Recently, we demonstrated nearly 100% quantum efficiency at <200 nm vacuum ultraviolet (VUV) wavelengths at ambient and in noble liquids, making such devices particularly useful for direct detection of scintillation light in noble liquid detectors. This is important in nuclear science experiments like DarkSide, LUX, XENON, and nEXO, where detection of weak VUV scintillation photons in noble liquids are used to identify rare physics radiation events. Here, we measured the response of b-Si photodiode to the scintillation light generated by alpha particles, all immersed in a LAr and LXe test cell. We established a guideline for future development of b-Si photodetectors with internal gain to reach single-photon sensitivity.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Large-area low-noise flexible organic photodiodes for detecting faint visible light

Silicon photodiodes are the foundation of light-detection technology; yet their rigid structure and limited area scaling at low cost hamper their use in several emerging applications. A detailed methodology for the characterization of organic photodiodes based on polymeric bulk heterojunctions reveals the influence that charge-collecting electrodes have on the electronic noise at low frequency. The performance of optimized organic photodiodes is found to rival that of low-noise silicon photodiodes in all metrics within the visible spectral range, except response time, which is still video-rate compatible. Solution-processed organic photodiodes offer several design opportunities exemplified in a biometric monitoring application that uses ring-shaped, large-area, flexible, organic photodiodes with silicon-level performance.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

32 Gbps heterogeneously integrated quantum dot waveguide avalanche photodiodes on silicon

We report a heterogeneous GaAs-based quantum dot (QD) avalanche photodiode (APD) on silicon with an ultralow dark current of 10 pA at − <#comment/> 1 V , 3 dB bandwidth of 20 GHz and record gain-bandwidth product (GBP) of 585 GHz. Furthermore, open eye diagrams up to 32 Gb/s are demonstrated at 1310 nm. The k-factor has been measured for these devices to be as low as 0.14. A polarization dependence on gain and bandwidth has been observed and investigated. This shows the potential to integrate a high-speed receiver in a wavelength division multiplexing (WDM) system on a QD-based silicon photonics platform.

Tossoun, Bassem↗
DOE OSTI2021

Bias-dependent displacement damage effects in a silicon avalanche photodiode

Radiation effects studies on a commercial beveled-edge avalanche photodiode (APD) showed that applying reverse bias to the device during irradiation enhanced the severity of apparent damage. Proton microbeam irradiations were made using a proton beam energy of 2 MeV and fluence ranging from 2.0 × 10 10 to 5.1 × 10 12 cm -2 . Charge collection measurements using the ion beam induced charge (IBIC) technique showed that relative losses increased by up to an order of magnitude when the reverse bias applied during irradiation increased from 50 to 1500 V. The presence of reverse bias also led to equivalent losses in charge collection that would only be seen in irradiations with an order of magnitude higher fluence in unbiased APDs. The results demonstrate that bias-enhanced irradiation damage is insufficiently understood and must be accounted for in characterizations of radiation effects.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

The Effect of Radiation Damage on the Charge Collection Efficiency of Silicon Avalanche Photodiodes

Understanding radiation effects on avalanche photodiodes (APDs) is important because they are used in several applications involving harsh radiation environments. APDs are used as photosensors in applications where speed and detection efficiency are critical. Proton irradiation experiments on a commercial off-the-shelf APD demonstrated that the irradiation flux and applied reverse bias have a strong influence on the severity of radiation effects. This is measured using the ion beam induced charge (IBIC) technique in which charge collection efficiency (CCE) describes the signal response from a device. CCE can degrade substantially due to radiation damage, but recent measurements show that certain combinations of irradiation flux and reverse bias can lead to increases in CCE up to 186% ± 24% for irradiations with 2 MeV protons at a fluence of 6.4 × 10 11 cm –2 . This defect-enhanced charge multiplication (DECM) only appeared when the reverse bias during irradiation ranged from 170 to 1830 V out of a maximum operating bias of 2000 V and the proton flux ranged from 9.8 × 10 7 to 3.4 × 10 9 cm –2 s –1 . Furthermore values outside of either range led to losses in CCE. It is expected that DECM should be encountered in other devices, especially those with sufficiently high electric fields to cause impact ionization.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

A time-resolved imaging system for the diagnosis of x-ray self-emission in high energy density physics experiments

A diagnostic capable of recording spatially and temporally resolved x-ray self-emission data was developed to characterize experiments on the MAGPIE pulsed-power generator. The diagnostic used two separate imaging systems: a pinhole imaging system with two-dimensional spatial resolution and a slit imaging system with one-dimensional spatial resolution. The two-dimensional imaging system imaged light onto the image plate. The one-dimensional imaging system imaged light onto the same piece of image plate and a linear array of silicon photodiodes. This design allowed the cross-comparison of different images, allowing a picture of the spatial and temporal distribution of x-ray self-emission to be established. The design was tested in a series of pulsed-power-driven magnetic-reconnection experiments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Fast photodiode arrays for high frequency fluctuation measurements of reconnecting flux ropes

An array of compact, high-bandwidth (>200 MHz) and low-cost optical photodiodes has been developed and implemented on the PHASe MApping (PHASMA) experiment. Using purpose-built electronics, an array of 16 photodetectors was constructed and used to monitor broadband (1–5 MHz) fluctuations in light intensity emitted by flux ropes undergoing electron-only magnetic reconnection. These measurements reveal a swath of oscillatory behavior, including wave propagation inward toward the diffusion region at approximately the local electron Alfvén speed. Custom 3D-printed collection optics and mounting hardware allow quick reconfiguration of the array for radial or axial measurements. The electronics design is flexible enough to be used with other current-sourcing transducers, such as avalanche photodiodes; silicon photomultipliers; and infrared, x-ray, and UV photodiodes. A noise-rejecting electrical layout allows for low-noise operation close to pulsed plasma discharges. A 16-channel, 64-pixel tomographic array was constructed and initial reconstructions are presented.

Instruments & Instrumentation↗
DOE OSTI2024

Anti-distortion bioinspired camera with an inhomogeneous photo-pixel array

The bioinspired camera, comprising a single lens and a curved image sensor—a photodiode array on a curved surface—, was born of flexible electronics. Its economical build lends itself well to space-constrained machine vision applications. The curved sensor, much akin to the retina, helps image focusing, but the curvature also creates a problem of image distortion, which can undermine machine vision tasks such as object recognition. Here we report an anti-distortion single-lens camera, where 4096 silicon photodiodes arrayed on a curved surface in a nonuniform pattern assimilated to the distorting optics are the key to anti-distortion engineering. That is, the photo-pixel distribution pattern itself is warped in the same manner as images are warped, which correctively reverses distortion. Acquired images feature no appreciable distortion across a 120° horizontal view, as confirmed by their neural-network recognition accuracies. This distortion correction via photo-pixel array reconfiguration is a form of in-sensor computing.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Femtojoule optical nonlinearity for deep learning with incoherent illumination

Optical neural networks (ONNs) are a promising computational alternative for deep learning due to their inherent massive parallelism for linear operations. However, the development of energy-efficient and highly parallel optical nonlinearities, a critical component in ONNs, remains an outstanding challenge. Here, we introduce a nonlinear optical microdevice array (NOMA) compatible with incoherent illumination by integrating the liquid crystal cell with silicon photodiodes at the single-pixel level. We fabricate NOMA with more than half a million pixels, each functioning as an optical analog of the rectified linear unit at ultralow switching energy down to 100 femtojoules per pixel. With NOMA, we demonstrate an optical multilayer neural network. Our work holds promise for large-scale and low-power deep ONNs, computer vision, and real-time optical image processing.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Towards a Counting Point Detector for Nanosecond Coherent X-ray Science

We present the technical realization of a high-speed hard X-ray single-photon counting-detection scheme based on a commercial avalanche silicon photodiode and high-speed oscilloscope. The development is motivated by the need to perform pulse-resolved photon-correlation and pump-probe studies at synchrotron sources with densely packed pulse patterns that result in high repetition rate pulses on the order of hundreds of MHz. Commissioning experiments are performed at the 1C PAL-KRISS beamline at PLS-II of South Korea operating at a burst mode maximum repetition rate of 500 MHz. In such a high count-rate measurement, detector dead-time can lead to a distortion of counting statistics. We are able to model the counting behavior of our detector under these conditions with a detector dead-time comparable to time between X-ray pulses, implying that nanosecond X-ray photon correlation spectroscopy should be possible at diffraction-limited light sources.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Evaluation of silicon and indium gallium arsenide photodiodes as direct timing detectors for pulsed x-ray systems

Benchtop pulsed x-ray systems are commonly used to record dynamic material data on the order of nanoseconds, but pulse timing is often difficult to accurately determine. This study demonstrates that commercially available photodiodes can be used effectively for direct x-ray pulse detection without the need for visible light scintillators. X-ray pulses from four commercially available flash x-ray systems were quantified using one silicon and two indium gallium arsenide (InGaAs) photodiodes. The measured InGaAs pulse durations were strongly dependent on radiation dose in the non-linear operating regime, so the photodiodes were shielded to operate below the 2.5 V non-linear regime threshold. The average pulse duration and pulse arrival time jitter of the photodiodes for each x-ray source were within several nanoseconds with the exception of two sets of measurements that were affected by low instrument sensitivity and electrical noise. These results show that InGaAs photodiodes can be used as effective and repeatable stand-alone timing diagnostics for x-ray pulses as short as 20 ns or less.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications

Abstract The aim of this paper is to identify, analyze and compare the defects present in III-As, as a function of dislocation density, and as a function of the presence/absence of quantum dots (QDs). Such materials are of fundamental importance for the development of lasers and photodiodes for silicon photonics. The study is based on an extensive deep-level transient spectroscopy investigation, carried out on GaAs pin diodes grown on Si and on GaAs (that differ in the dislocation density), with and without embedded QDs. The original results described in this paper demonstrate that: (a) we were able to identify four different defects within the device grown on Si (three electron and one hole traps) and one defect (hole trap) in the device on GaAs, common to both samples; (b) all the majority carrier traps identified are located near midgap, i.e. are efficient non-radiative recombination centers; (c) such defects are absent (or non-detectable) in the sample grown on GaAs substrate, having a very low dislocation density; (d) the presence of QDs does not result in additional defects within the semiconductor material; (e) the analysis of the capture kinetics revealed that two of the identified traps are related to point defects, whereas the other two traps can be associated with point defects located near a dislocation; (f) a comparison with previous reports indicate that the detected traps are related to native III-As defects, or to oxygen-related complexes.

Physics↗
DOE OSTI2023

Radiation, optical, power flow, and electrical diagnostics at the Z facility: Layout and techniques utilized to operate in the harsh environment

The Z machine is a current driver producing up to 30 MA in 100 ns that utilizes a wide range of diagnostics to assess accelerator performance and target behavior conduct experiments that use the Z target as a source of radiation or high pressures. Here, we review the existing suite of diagnostic systems, including their locations and primary configurations. The diagnostics are grouped in the following categories: pulsed power diagnostics, x-ray power and energy, x-ray spectroscopy, x-ray imaging (including backlighting, power flow, and velocimetry), and nuclear detectors (including neutron activation). We will also briefly summarize the primary imaging detectors we use at Z: image plates, x-ray and visible film, microchannel plates, and the ultrafast x-ray imager. The Z shot produces a harsh environment that interferes with diagnostic operation and data retrieval. We term these detrimental processes “threats” of which only partial quantifications and precise sources are known. Finally, we summarize the threats and describe techniques utilized in many of the systems to reduce noise and backgrounds.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

High-throughput nuclear resonance time domain interferometry using annular slits

Nuclear resonance time domain interferometry (NR-TDI) is used to study the slow dynamics of liquids (that do not require Mössbauer isotopes) at atomic and molecular length scales. Here the TDI method of using a stationary two-line magnetized 57 Fe foil as a source and a stationary single-line stainless steel foil analyzer is employed. The new technique of adding an annular slit in front of a single silicon avalanche photodiode detector enables a wide range of momentum transfers (1 to 100 nm -1 by varying the distance between the annular slits and sample) with a high count rate of up to 160 Hz with a Δ q resolution of ±1.7 nm -1 at q = 14 nm -1 . The sensitivity of this method in determining relaxation times is quantified and discussed. The Kohlrausch–Williams–Watts (KWW) model was used to extract relaxation times for glycerol. These relaxation times give insight into the dynamics of the electron density fluctuations of glycerol as a function of temperature and momentum transfers.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Passive bias temperature compensation circuit module

A passive bias temperature compensation module for silicon photomultiplier, avalanche photodiodes and similar photodetectors that possess a moderately linear temperature coefficient of gain and that may be compensated by varying an applied bias voltage. The module includes an electrical circuit and a method for determining component values to provide a constant voltage source to stabilize the gain of one or more photodetector devices. A temperature sensor in the module is held in close thermal contact with the photodetector and a filter capacitor is electrically close to the photodetector. The module is based on the concept of temperature sensitive voltage division which is applicable to situations in which large numbers of photodetectors must be gain-compensated for temperature variations over a wide range while maintaining excellent gain matching. The passive bias temperature compensation method enables multiple photodetectors to share a single constant voltage supply without loss of matching performance.

42 ENGINEERING↗