Search NASASearch

SEARCH · Search NASA

Results for “Single Event Transient (SET)”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records

Compendium of Single Event Transient (SET) and Total Ionizing Dose (TID) Test Results for Commonly Used Voltage Comparators

This data compendium reports single event transient (SET) and total ionizing dose (TID) test results for commonly used commercial-off-the-shelf (COTS) and radiation hardened voltage comparators targeted for possible use in space-based missions. Interesting trends in the variability of the radiation performance of these devices due to differences in lot date codes, manufacturers, circuit design, and test conditions are analyzed herein.

Bozovich, Amanda

Xilinx Kintex-UltraScale Field Programmable Gate Array Single Event Effects (SEE) Heavy-Ion Test Report

This is an independent investigation that evaluates the single event destructive and transient susceptibility of the Xilinx Kintex-UltraScale device. Design/Device susceptibility is determined by monitoring the device under test (DUT) for Single Event Transient (SET) and Single Event Upset (SEU) induced faults by exposing the DUT to a heavy ion beam. Potential Single Event Latch-up (SEL) is monitored throughout heavy-ion testing by examining device current. This device does not have embedded mitigation. Hence, user implemented mitigation is investigated using Synopsys mitigation tools.

Single Event Transient (SET)

Board Level Proton Testing Book of Knowledge for NASA Electronic Parts and Packaging Program

This book of knowledge (BoK) provides a critical review of the benefits and difficulties associated with using proton irradiation as a means of exploring the radiation hardness of commercial-off-the-shelf (COTS) systems. This work was developed for the NASA Electronic Parts and Packaging (NEPP) Board Level Testing for the COTS task. The fundamental findings of this BoK are the following. The board-level test method can reduce the worst case estimate for a board's single-event effect (SEE) sensitivity compared to the case of no test data, but only by a factor of ten. The estimated worst case rate of failure for untested boards is about 0.1 SEE/board-day. By employing the use of protons with energies near or above 200 MeV, this rate can be safely reduced to 0.01 SEE/board-day, with only those SEEs with deep charge collection mechanisms rising this high. For general SEEs, such as static random-access memory (SRAM) upsets, single-event transients (SETs), single-event gate ruptures (SEGRs), and similar cases where the relevant charge collection depth is less than 10 μm, the worst case rate for SEE is below 0.001 SEE/board-day. Note that these bounds assume that no SEEs are observed during testing. When SEEs are observed during testing, the board-level test method can establish a reliable event rate in some orbits, though all established rates will be at or above 0.001 SEE/board-day. The board-level test approach we explore has picked up support as a radiation hardness assurance technique over the last twenty years. The approach originally was used to provide a very limited verification of the suitability of low cost assemblies to be used in the very benign environment of the International Space Station (ISS), in limited reliability applications. Recently the method has been gaining popularity as a way to establish a minimum level of SEE performance of systems that require somewhat higher reliability performance than previous applications. This sort of application of the method suggests a critical analysis of the method is in order. This is also of current consideration because the primary facility used for this type of work, the Indiana University Cyclotron Facility (IUCF) (also known as the Integrated Science and Technology (ISAT) hall), has closed permanently, and the future selection of alternate test facilities is critically important. This document reviews the main theoretical work on proton testing of assemblies over the last twenty years. It augments this with review of reported data generated from the method and other data that applies to the limitations of the proton board-level test approach. When protons are incident on a system for test they can produce spallation reactions. From these reactions, secondary particles with linear energy transfers (LETs) significantly higher than the incident protons can be produced. These secondary particles, together with the protons, can simulate a subset of the space environment for particles capable of inducing single event effects (SEEs). The proton board-level test approach has been used to bound SEE rates, establishing a maximum possible SEE rate that a test article may exhibit in space. This bound is not particularly useful in many cases because the bound is quite loose. We discuss the established limit that the proton board-level test approach leaves us with. The remaining possible SEE rates may be as high as one per ten years for most devices. The situation is actually more problematic for many SEE types with deep charge collection. In cases with these SEEs, the limits set by the proton board-level test can be on the order of one per 100 days. Because of the limited nature of the bounds established by proton testing alone, it is possible that tested devices will have actual SEE sensitivity that is very low (e.g., fewer than one event in 1 × 10(exp 4) years), but the test method will only be able to establish the limits indicated above. This BoK further examines other benefits of proton board-level testing besides hardness assurance. The primary alternate use is the injection of errors. Error injection, or fault injection, is something that is often done in a simulation environment. But the proton beam has the benefit of injecting the majority of actual SEEs without risk of something being missed, and without the risk of simulation artifacts misleading the SEE investigation.

Guertin, Steven M.

Microsemi RTG4 Rev C Field Programmable Gate Array Single Event Effects (SEE) Heavy-Ion Test Report

The goal of this study was to perform an independent investigation of single event destructive and transient susceptibility of the Microsemi RTG4 device. The devices under test were the Microsemi RTG4 field programmable gate array (FPGA) Rev C. The devices under test will be referenced as the DUT or RTG4 Rev C throughout this document. The DUT was configured to have various test structures that are geared to measure specific potential susceptibilities of the device. DesignDevice susceptibility was determined by monitoring the DUT for Single Event Transient (SET) and Single Event Upset (SEU) induced faults by exposing the DUT to a heavy ion beam. Potential Single Event Latch-up (SEL) was checked throughout heavy-ion testing by monitoring device current.

Field Programmable Gate Array (FPGA)

SEE Test Report for Texas Instruments TLV5618 2.7-V to 5.5-V Low-Power Dual 12-Bit Digital-to-Analog Converter with Power Down

The primary purpose of this testing was to characterize the Texas Instruments TLV5618 12-bit digital-to-analog converter (DAC) for single-event latchup (SEL) susceptibility. These data will be used to assess the SEL risk for the OSIRIS-REx Laser Altimeter (OLA). A secondary goal is to assess the susceptibility of the DAC to single-event transients (SET), single-event upsets (SEU), and other nondestructive SEE.

Raymond Ladbury

SEE Test Report for Texas Instruments LMV7219 7 ns, 2.7 V to 5 V Comparator with Rail-to-Rail Output

The primary purpose of this testing is to characterize the Texas Instruments LMV7219 comparator for single-event latchup (SEL) susceptibility. These data will be used to assess the Single-Event Latchup (SEL) risk for the OSIRIS-REx Laser Altimeter (OLA). A secondary goal is to assess the susceptibility of the comparator to single-event transients (SET) and other nondestructive Single-Event Effects (SEE).

Raymond Ladbury

Analysis and Simulations of Space Radiation Induced Single Event Effects and Transients

Spacecraft electronic are affected by the space radiation environment. Among the different types of radiation effects that can affect spacecraft electronics is the single event transient (SET). The space environment is responsible for many of the single event transients which can upset the performance of the spacecraft avionics hardware. In this chapter we first explore the origins of single event transients, then explore the modeling of a single event transient in digital and analog circuit. The chapter also addresses the concept of crosstalk that could develop among digital circuits in the present of a SET event. The chapter also provides a discussion of SET hardening. We then provide a discussion concerning propagation of a single event transient event at the local, subsystem, and system level in a spacecraft using two different models, one of the models developed by the author, known as the state transition model. The final goal of the chapter is to provide a qualitatively methodology for assessing single event transients and its effects so that spacecraft avionics engineers can develop either hardware or software countermeasures in their designs. SET is not a form of electromagnetic interference (EMI) in its origin, but semantically SET is very similar to EMI because they are both caused a current source not previously accounted for. SET has the same effects as EMI and it can cause interference problems in electronic circuits via multiple coupling mechanisms similar to EMI, and therefore makes such circuits incompatible.

Perez, Reinaldo J.

Single-Event Effect Testing of the Linear Technology LTC6103HMS8#PBF Current Sense Amplifier

The LTC6103HMS8#PBF (henceforth abbreviated as LTC6103) current sense amplifier from Linear Technology was tested for both destructive and non-destructive single-event effects (SEE) using the heavy-ion cyclotron accelerator beam at Lawrence Berkeley National Laboratory (LBNL) Berkeley Accelerator Effects (BASE) facility. During testing, the input voltages and output currents were monitored to detect single event latch-up (SEL) and single-event transients (SETs).

single-event effects (SEE)

Single Event Effect Testing of the Analog Devices ADXL354 3-Axis MEMS Accelerometer

The Analog Devices ADXL354 3-AXIS MEMS accelerometer was tested for single-event effects, both destructive and non-destructive. The device was characterized for single-event upset (SEU) sensitivity and evaluated for any possibility of single-event latchup (SEL), single-event dielectric rupture (SEDR) and single-event functional interrupts (SEFI). Single-event transient (SET) response was also monitored.

Single-Event Effect (SEE)

Single Event Transient Analysis of an SOI Operational Amplifier for Use in Low-Temperature Martian Exploration

The next generation of Martian rover#s to be launched by JPL are to examine polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in high levels of cosmic radiation at ground level. Cosmic rays lead to a plethora of radiation effects including Single Event Transients (SET) which can severely degrade microelectronic functionality. As such, a radiation-hardened, temperature compensated CMOS Single-On-Insulator (SOI) Operational Amplifier has been designed for JPL by the University of Tennessee and fabricated by Honeywell using the SOI V process. SOI technology has been shownto be far less sensitive to transient effects than both bulk and epilayer Si. Broad beam heavy-ion tests at the University of Texas A&M using Kr and Xebeams of energy 25MeV/amu were performed to ascertain the duration and severity of the SET for the op-amp configured for a low and high gain application. However, some ambiguity regarding the location of transient formation required the use of a focused MeV ion microbeam. A 36MeV O6(+) microbeam. the Sandia National Laboratory (SNL) was used to image and verify regions of particular concern. This is a viewgraph presentation

operational amplifier

Total Dose Effects on Single Event Transients in Digital CMOS and Linear Bipolar Circuits

This presentation discusses the effects of ionizing radiation on single event transients (SETs) in circuits. The exposure of integrated circuits to ionizing radiation changes electrical parameters. The total ionizing dose effect is observed in both complementary metal-oxide-semiconductor (CMOS) and bipolar circuits. In bipolar circuits, transistors exhibit grain degradation, while in CMOS circuits, transistors exhibit threshold voltage shifts. Changes in electrical parameters can cause changes in single event upset(SEU)/SET rates. Depending on the effect, the rates may increase or decrease. Therefore, measures taken for SEU/SET mitigation might work at the beginning of a mission but not at the end following TID exposure. The effect of TID on SET rates should be considered if SETs cannot be tolerated.

Buchner, S.

Resources for Radiation Test Data

The performance of electronic devices in a space radiation environment is often limited by susceptibility to single-event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Interpreting the results of SEE, TID, and DD testing of complex devices is quite difficult given the rapidly changing nature of both technology and the related radiation issues. Radiation testing is performed to establish the sensitivities of candidate spacecraft electronics to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transients (SETs), TID, and DD effects. Knowing where to search for these test results is a valuable resource for the aerospace engineer or spacecraft design engineer. This poster is intended to be a resource tool for finding radiation test data.

Single Event Effects (SEE)

Compendium of Single Event Effects, Total Ionizing Dose, and Displacement Damage for Candidate Spacecraft Electronics for NASA

We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). Introduction: This paper is a summary of test results.NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment is often limited by its susceptibility to single event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is quite difficult. Given the rapidly changing nature of technology, radiation test data are most often application-specific and adequate understanding of the test conditions is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transient (SET), TID, enhanced low dose rate sensitivity (ELDRS), and DD effects.

Single Event Effects